CS3205 A8
CS3205 A8
CS3205 A8
○
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CS3205 A8
CS3205 A8, the silicon N-channel Enhanced VDMOSFETs, ID( Silicon limited current ) 120 A
P D (TC=25℃) 230 W
is obtained by the self-aligned planar Technology which reduce
RDS(ON)Typ 7 mΩ
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤8mΩ)
Low Gate Charge (Typical Data:75nC)
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ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=50A -- 7 8 mΩ
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
gfs Forward Trans conductance VDS=15V, ID =50.0A -- 80 -- S
Ciss Input Capacitance -- 4000 --
VGS = 0V VDS = 25V
Coss Output Capacitance f = 1.0MHz -- 750 -- pF
Crss Reverse Transfer Capacitance -- 75 --
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a1
:Drain Current limited by Maximum Package Current Rating, 75 Amps
a2
:Repetitive rating; pulse width limited by maximum junction temperature
a3
:L=260uH, ID=101.5A, Start TJ =25℃
a4
:ISD =50A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃
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Characteristics Curve:
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Package Information
Values(mm)
Items
MIN MAX
A 9.60 10.6
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 2.70 3.80
L* 12.6 14.8
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
*adjustable
TO-220AB Package
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Limit ≤ ≤ ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.1% 0.1% 0.01%
Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Compound
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○:Means the hazardous material is under the criterion of 2011/65/EU.
×:Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn HTU UTH
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