MSW 10 N 80

Preliminary MSW10N80
800V N-Channel MOSFET

Description
This latest technology has been especially designed to
minimize on-state resistance, have a high rugged
avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
Features
• RDS(on) (typ 0.65 Ω )@VGS=10V
• Gate Charge (Typical 55nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (150˚C)
• RoHS compliant package
Packing & Order Information
30/Tube ; 540/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 800 V
VGS Gate-Source Voltage ±30 V
Drain Current -Continuous (TC=25°C) 10 A
ID
Drain Current -Continuous (TC=100°C) 6.3 A
IDM Drain Current Pulsed 40 A
EAS Single Pulsed Avalanche Energy 920 mJ
EAR Repetitive Avalanche Energy 24 mJ
dV/dt Peak Diode Recovery dV/dt 4 V/ns
Power Dissipation (TC = 25 °C) 240 W
PD
- Derate above 25°C 1.92 W/°C
TJ,TSTG Operating and Storage Temperature Range -55 to +150 °C
Publication Order Number: [MSW10N80] © Bruckewell Technology Corporation Rev. A -2014

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol Parameter Value Unit
Maximum lead temperature for soldering purposes, 1/8'' from
TL 300 °C
case for 5 seconds
• Drain current limited by maximum junction temperature
Thermal Resistance Characteristics

Symbol Parameter Max. Units
RθJc Junction-to-Case 0.5
°C/W
RθJA Junction-to-Ambient 40
On Characteristics
Symbol Test Conditions Min Typ. Max. Units
VGS VDS = VGS , ID = 250μA 3.0 -- 5.0 V
*RDS(ON) VGS = 10 V , ID = 5 A -- 0.9 1.1 Ω
Off Characteristics
BVDSS VGS = 0 V , ID=250μA 800 -- -- V
△BVDSS /△TJ ID = 250μA, Referenced to 25°C -- 0.98 -- V/°C
VDS = 900 V , VGS = 0 V 10
IDSS -- -- μA
VDS = 720 V , VC = 125°C 100
IGSSF VGS = 30 V , VDS = 0 V -- -- 100 nA
IGSSR VGS = -30 V , VDS = 0 V -- -- -100 nA
Switching Characteristics
td(on) -- 60 -- ns
tr VDS = 400 V, ID = 10 A, -- 150 -- ns
td(off) RG = 25 Ω -- 120 -- ns
tf -- 120 -- ns
Qg -- 58 -- nC
VDS = 640 V,ID = 10 A,
Qgs -- 17.5 -- nC
VGS = 10 V
Qgd -- 22 -- nC
CISS -- 2800 -- pF
VDS = 25 V, VGS = 0 V,
COSS -- 230 -- pF
F = 1.0MHz
CRSS -- 20 -- pF

Source-Drain Diode Characteristics

Symbol Parameter Test Conditions Min Typ. Max. Units
IS -- -- 10
A
ISM -- -- 40
VSD IS = 9 A , VGS = 0 V -- -- 1.4 V
trr IS = 9 A , VGS = 0 V -- 950 -- ns
Qrr diF/dt = 100A/μs -- 14 -- μC
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=10A, VDD=50V, RG=25Ω, Starting TJ=25℃
3. ISD≦10A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%

5. Essentially Independent of Operating Temperature

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.

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Preliminary MSW10N80

800V N-Channel MOSFET

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Publication Order Number: [MSW10N80] © Bruckewell Technology Corporation Rev. A -2014

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Thermal Resistance Characteristics

Publication Order Number: [MSW10N80] © Bruckewell Technology Corporation Rev. A -2014

Source-Drain Diode Characteristics

3. ISD≦10A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%

Publication Order Number: [MSW10N80] © Bruckewell Technology Corporation Rev. A -2014

Publication Order Number: [MSW10N80] © Bruckewell Technology Corporation Rev. A -2014

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