AUTOMOTIVE GRADE

AUIRF7103Q

Features VDSS
S1
1 8
D1 50V
 Advanced Planar Technology G1
2 7
D1

 Dual N Channel MOSFET RDS(on) max.

S2
3 6
D2 130m
 Low On-Resistance G2
4 5
D2

 Logic Level Gate Drive ID

Top View 3.0A
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *

Description SO-8
AUIRF7103Q
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon G D S
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are Gate Drain Source
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
AUIRF7103Q SO-8 Tape and Reel 4000 AUIRF7103QTR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.

Symbol Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 3.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 2.5 A
IDM Pulsed Drain Current  25
PD @TA = 25°C Maximum Power Dissipation  2.4 W
Linear Derating Factor 16 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited)  22 mJ
IAR Avalanche Current  See Fig.19,20, 16b, 16c A
EAR Repetitive Avalanche Energy  mJ
dv/dt Peak Diode Recovery dv/dt  12 V/ns
TJ Operating Junction and -55 to + 175
°C
TSTG Storage Temperature Range

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJL Junction-to-Drain Lead ––– 20
°C/W
RJA Junction-to-Ambient  ––– 62.5

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130 VGS = 10V, ID = 3.0A 
RDS(on) Static Drain-to-Source On-Resistance m
––– ––– 200 VGS = 4.5V, ID = 1.5A 
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 3.4 ––– ––– S VDS = 15V, ID = 3.0A
––– ––– 2.0 VDS =40V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 40V,VGS = 0V,TJ =55°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 10 15 ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 40V
Qgd Gate-to-Drain Charge ––– 2.8 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 25V
tr Rise Time ––– 1.7 ––– ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0
tf Fall Time ––– 2.3 ––– RD = 25
Ciss Input Capacitance ––– 255 ––– VGS = 0V
Coss Output Capacitance ––– 69 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 29 ––– ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 3.0
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 12
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 1.5A,VGS = 0V 
trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C ,IF = 1.5A,
Qrr Reverse Recovery Charge ––– 45 67 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width 400µs; duty cycle  2%.
 Surface mounted on 1" in square Cu board.
 Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)
ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ  175°C.
 Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.

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100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 10 5.0V
BOTTOM 4.5V BOTTOM 4.5V 4.5V

4.5V
10

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 0.1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

100.00 2.5
ID = 3.0A
RDS(on) , Drain-to-Source On Resistance

T J = 175°C
ID, Drain-to-Source Current  )

2.0
(Normalized)

1.5
T J = 25°C
10.00

1.0

0.5

VDS = 25V
20µs PULSE WIDTH V GS= 10V
1.00 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 6.0 9.0 12.0 15.0
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance

vs. Temperature

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10000 12
VGS = 0V, f = 1 MHZ I D = 2.0A
V DS = 40V
Ciss = Cgs + Cgd , Cds SHORTED
V DS = 25V
Crss = Cgd V DS = 10V
Coss = Cds + Cgd
9
C, Capacitance(pF)

VGS, Gate-to-Source Voltage (V)

1000

Ciss 6

100 Coss

3
Crss

10 0
1 10 100 0 3 6 9 12
Q G, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)

10

1 100µsec

1msec

0.1
Tc = 25°C
Tj = 175°C 10msec
Single Pulse
0.01
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)

Fig. 7 Typical Source-to-Drain Diode

Fig 8. Maximum Safe Operating Area
Forward Voltage

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3.0

2.4
ID , Drain Current (A)

1.8

1.2

0.6 Fig 10a. Switching Time Test Circuit

0.0
25 50 75 100 125 150 175
T C , Case Temperature ( °C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response ( Z thJA ) °C/W

10 0.20
0.10
0.05
0.02
1 0.01

0.1 SINGLE PULSE

( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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0.15 2.500
RDS(on) , Drain-to -Source On Resistance (  )

R DS (on) , Drain-to-Source On Resistance (  )

0.14
2.000

0.13
VGS = 4.5V
1.500

0.12

1.000
0.11 ID = 3.0A

0.500
0.10 VGS = 10V

0.09 0.000
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 0 5 10 15 20 25 30 35 40
-VGS, Gate -to -Source Voltage (V) ID , Drain Current (A)

Fig 12. Typical On-Resistance Vs.

Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current

2.0 70
V GS(th) Gate threshold Voltage (V)

60

1.8
50
ID = 250µA
Power (W)

40
1.5
30

1.3 20

10

1.0 0
-75 -50 -25 0 25 50 75 100 125 150
1.00 10.00 100.00 1000.00
TJ , Temperature ( °C ) Time (sec)

Fig. 14. Typical Threshold Voltage Vs. Junction

Fig 15. Typical Power Vs. Time
Temperature

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15V
60
ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP 1.2A
2.5A
48 BOTTOM 3.0A L DRIVER
VDS

36 RG D.U.T +
V
- DD
IAS A
20V
24 tp 0.01

Fig 16b. Unclamped Inductive Test Circuit

12

V(BR)DSS
0 tp
25 50 75 100 125 150 175
Starting T ,JJunction Temperature ( °C)

Fig 16a. Maximum Avalanche Energy

vs. Drain Current I AS

Fig 16c. Unclamped Inductive Waveforms

Id
Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 17. Gate Charge Test Circuit

Fig 18. Basic Gate Charge Waveform

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1000

Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

10 assuming  Tj = 25°C due to
avalanche losses

1 0.01

0.05
0.1
0.10

0.01
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

tav (sec)

Fig 19. Typical Avalanche Current vs. Pulse width

25 Notes on Repetitive Avalanche Curves , Figures 19, 20:

TOP Single Pulse (For further info, see AN-1005 at www.infineon.com)
BOTTOM 10% Duty Cycle
ID = 3.0A 1. Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

20 Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
15 3. Equation below based on circuit and waveforms shown in Figures 16b, 16c.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
10 during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
5 25°C in Figure 11, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
0 ZthJC(D, tav) = Transient thermal resistance, see Figures 11)
25 50 75 100 125 150 175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Starting T J , Junction Temperature (°C)
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav

Fig 20. Maximum Avalanche Energy

vs. Temperature

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SO-8 Package Outline (Dimensions are shown in millimeters (inches)

IN C H ES M ILLIM ETERS
D IM
D B M IN M AX M IN M AX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [ .010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 B ASIC 1.27 B ASIC
e1 .025 B ASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [ .004]
8X b A1 8X L 8X c

0.25 [ .010] C A B 7

F O O T P R IN T
N O TE S :
1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 .7 2 [ .0 2 8 ]
2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6 .4 6 [ .2 5 5 ]
6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .

3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ]

SO-8 Part Marking Information

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 AUIRF7103Q

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

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Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
Class M1A (+/- 50V)†
Machine Model
AEC-Q101-002
Class H0 (+/- 250V)†
ESD Human Body Model
AEC-Q101-001
Class C5 (+/- 1125V)†
Charged Device Model
AEC-Q101-005
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Added "Logic Level Gate Drive" bullet in the features section on page 1
4/3/2014
 Updated data sheet with new IR corporate template
 Updated datasheet with corporate template
9/30/2015
 Corrected ordering table on page 1.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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