AUTOMOTIVE GRADE AUIRFZ44VZS

HEXFET® Power MOSFET

Features
 Advanced Process Technology VDSS 60V
 Ultra Low On-Resistance
 175°C Operating Temperature RDS(on) typ. 9.6m
 Fast Switching max. 12m
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant ID 57A
 Automotive Qualified *
D

Description S
Specifically designed for Automotive applications, this HEXFET® G
Power MOSFET utilizes the latest processing techniques to achieve
D2Pak
extremely low on-resistance per silicon area. Additional features of AUIRFZ44VZS
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and G D S
reliable device for use in Automotive applications and a wide variety Gate Drain Source
of other applications

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
Tube 50 AUIRFZ44VZS
AUIRFZ44VZS D2-Pak
Tape and Reel Left 800 AUIRFZ44VZSTRL

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
IDM Pulsed Drain Current  230
PD @TC = 25°C Maximum Power Dissipation 92 W
Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally Limited) Single Pulse Avalanche Energy (Thermally Limited)  73
mJ
EAS (Tested) Single Pulse Avalanche Energy (Tested Limited)  110
IAR Avalanche Current  See Fig. 12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy  mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.64
°C/W
RJA Junction-to-Ambient (PCB Mount), D2 Pak  ––– 40
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 9.6 12 m VGS = 10V, ID = 34A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 25 ––– ––– S VDS = 25V, ID = 34A
––– ––– 20 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 60V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 43 65 ID = 34A
Qgs Gate-to-Source Charge ––– 11 ––– nC VDS = 48V
Qgd Gate-to-Drain Charge ––– 18 ––– VGS = 10V 
td(on) Turn-On Delay Time ––– 14 ––– VDD = 30V
tr Rise Time ––– 62 ––– ID = 34A
ns
td(off) Turn-Off Delay Time ––– 35 ––– RG= 12
tf Fall Time ––– 38 ––– VGS = 10V 
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact
Ciss Input Capacitance ––– 1690 ––– VGS = 0V
Coss Output Capacitance ––– 270 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz
pF
Coss Output Capacitance ––– 1870 ––– VGS = 0V, VDS = 1.0V,ƒ = 1.0MHz
Coss Output Capacitance ––– 260 ––– VGS = 0V, VDS = 48V,ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 510 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 57
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 230
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 34A,VGS = 0V 
trr Reverse Recovery Time ––– 23 35 ns TJ = 25°C ,IF = 34A, VDD = 30V
Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
 Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 34A, VGS =10V. Part not recommended for use above this value.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
 This value determined from sample failure population. 100% tested to this value in production, starting TJ = 25°C, L = 0.12mH,
RG = 25, IAS = 34A, VGS =10V. .
 This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994..

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 10 4.5V

60µs PULSE WIDTH 60µs PULSE WIDTH

4.5V Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

60
1000
T J = 175°C
Gfs, Forward Transconductance (S)

50
ID, Drain-to-Source Current )

40
100
T J = 175°C T J = 25°C
30

20
10

T J = 25°C
10 VDS = 15V
VDS = 25V
380µs PULSE WIDTH
60µs PULSE WIDTH
1
0
4.0 5.0 6.0 7.0 8.0 9.0 0 10 20 30 40 50 60
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance

Vs. Drain Current

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3000 20
VGS = 0V, f = 1 MHZ ID= 34A
Ciss = C gs + Cgd, C ds SHORTED
VDS= 48V

VGS, Gate-to-Source Voltage (V)

2500 Crss = C gd
16 VDS= 30V
Coss = Cds + Cgd
VDS= 12V
C, Capacitance (pF)

2000
Ciss 12

1500

8
1000

4
500 Coss
FOR TEST CIRCUIT
Crss SEE FIGURE 13
0 0
1 10 100 0 10 20 30 40 50 60

VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100.0
100
T J = 175°C

10.0 100µsec
10

T J = 25°C 1msec
1.0
1

Tc = 25°C 10msec
VGS = 0V
Tj = 175°C
0.1 Single Pulse
0.1
0.2 0.6 1.0 1.4 1.8
1 10 100 1000
VSD , Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig. 7 Typical Source-to-Drain Diode

Fig 8. Maximum Safe Operating Area
Forward Voltage

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2.5
60
ID = 34A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
50
2.0
ID , Drain Current (A)

40

(Normalized)
1.5
30

20
1.0

10

0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
25 50 75 100 125 150 175
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
0.10 R1
R1
R2
R2
0.1 J C Ri (°C/W) i (sec)
0.05 J C
1 2
0.02
1 2 0.960 0.00044
0.01 Ci= iRi
0.680 0.00585
Ci= iRi
0.01

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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15V

L DRIVER
VDS

300
ID

EAS, Single Pulse Avalanche Energy (mJ)

RG D.U.T +
V TOP 3.8A
- DD
IAS A 250
5.0A
20V BOTTOM 34A
tp 0.01
200

Fig 12a. Unclamped Inductive Test Circuit 150

100

V(BR)DSS
50
tp

0
25 50 75 100 125 150 175

Starting T J, Junction Temperature (°C)

I AS

Fig 12c. Maximum Avalanche Energy vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms
Id
Vds

Vgs

Vgs(th)

4.0
VGS(th) Gate threshold Voltage (V)

Qgs1 Qgs2 Qgd Qgodr

ID = 250µA
Fig 13a. Gate Charge Waveform 3.0

2.0

1.0
-75 -50 -25 0 25 50 75 100 125 150 175

T J , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

Fig 13b. Gate Charge Test Circuit

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1000

Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

0.01 assuming  Tj = 25°C due to
avalanche losses. Note: In no
10 case should Tj be allowed to
0.05 exceed Tjmax
0.10

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs. Pulse width

80
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1% Duty Cycle (For further info, see AN-1005 at www.infineon.com)
ID = 34A 1. Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a temperature far in

60
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
40 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
20 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
25 50 75 100 125 150 175
Iav = 2T/ [1.3·BV·Zth]
Starting T J , Junction Temperature (°C) EAS (AR) = PD (ave)·tav

Fig 16. Maximum Avalanche Energy vs. Temperature

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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

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D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

D2-Pak (TO-263AB) Part Marking Information

Part Number AUIRFZ44VZS

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

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D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
Class M4 (+/- 425V)†
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V)†
ESD Human Body Model
AEC-Q101-001
Class C5 (+/- 1125V)†
Charged Device Model
AEC-Q101-005
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Updated datasheet with corporate template
10/27/2015
 Corrected ordering table on page 1.
10/13/2017  Corrected typo error on part marking on page 9.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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