AUTOMOTIVE GRADE AUIRFS3004-7P

HEXFET® Power MOSFET

Features
VDSS 40V
 Advanced Process Technology
 Ultra Low On-Resistance RDS(on) typ. 0.90m
 175°C Operating Temperature max. 1.25m
 Fast Switching ID (Silicon Limited) 400A
 Repetitive Avalanche Allowed up to Tjmax
ID (Package Limited) 240A
 Lead-Free, RoHS Compliant
 Automotive Qualified *

Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast D2Pak 7 Pin
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety G D S
of other applications. Gate Drain Source

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
Tube 50 AUIRFS3004-7P
AUIRFS3004-7P D2Pak 7 Pin
Tape and Reel Left 800 AUIRFS3004-7PTRL

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 400
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 280
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 240
IDM Pulsed Drain Current  1610
PD @TC = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited)  290 mJ
IAR Avalanche Current  See Fig.14,15, 22a, 22b A
EAR Repetitive Avalanche Energy  mJ
dv/dt Peak Diode Recovery  2.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.40
°C/W
RJA Junction-to-Ambient ( PCB Mount)  ––– 40

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 5mA 
RDS(on) Static Drain-to-Source On-Resistance ––– 0.90 1.25 m VGS = 10V, ID = 195A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 1300 ––– ––– S VDS = 10V, ID = 195A
RG Gate Resistance ––– 2.0 ––– 
––– ––– 20 VDS = 40V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 40V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 160 240 ID = 180A
Qgs Gate-to-Source Charge ––– 42 ––– VDS = 20V
nC
Qgd Gate-to-Drain Charge ––– 65 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 95 –––
td(on) Turn-On Delay Time ––– 23 ––– VDD = 26V
tr Rise Time ––– 240 ––– ID = 240A
ns
td(off) Turn-Off Delay Time ––– 91 ––– RG= 2.7
tf Fall Time ––– 160 ––– VGS = 10V
Ciss Input Capacitance ––– 9130 ––– VGS = 0V
Coss Output Capacitance ––– 2020 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 990 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 2590 ––– VGS = 0V, VDS = 0V to 32V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 2650 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 400
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 1610
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 195A,VGS = 0V 
––– 49 ––– TJ = 25°C VDD = 34V
trr Reverse Recovery Time ns
––– 51 ––– TJ = 125°C IF = 240A,
––– 37 ––– TJ = 25°C di/dt = 100A/µs 
Qrr Reverse Recovery Charge nC
––– 41 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 3.2 ––– A TJ = 25°C 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.01mH, RG = 25, IAS = 240A, VGS =10V. Part not recommended for use above this value.
 ISD 240A, di/dt 740A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
 R is measured at TJ approximately 90°C.
RJC value shown is at time zero

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

7.0V
ID, Drain-to-Source Current (A)

7.0V
100 6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 100

4.5V 60µs PULSE WIDTH 4.5V 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
0.1 10
0.1 1 10 100 1000 0.1 1 10 100 1000

V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

1000 2.0
ID = 195A

R DS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

100

T J = 175°C 1.5
(Normalized)
10 T J = 25°C

1.0
1

VDS = 25V
60µs PULSE WIDTH
0.1
0.5
3 4 5 6 7 8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature

100000 14.0
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED ID = 180A
Crss = C gd 12.0
VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd VDS = 32V

VDS = 20V
C iss 10.0
C, Capacitance (pF)

10000
C oss
8.0
C rss
6.0
1000
4.0

2.0

100 0.0
1 10 100 0 50 100 150 200 250
VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 175°C
ISD, Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 1000
100µsec

T J = 25°C
10 100
1msec

10msec
1 10
Tc = 25°C DC
VGS = 0V Tj = 175°C
Single Pulse
0.1 1
0.0 0.5 1.0 1.5 2.0 0 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

50
420 Id = 5mA

360 Limited By Package 48

300
ID, Drain Current (A)

46
240

44
180

120 42

60
40
0 -60 -40 -20 0 20 40 60 80 100 120 140160 180
25 50 75 100 125 150 175 T J , Temperature ( °C )
T C , Case Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage
1200
3.5
EAS , Single Pulse Avalanche Energy (mJ)

ID
TOP 44A
3.0 1000
80A
BOTTOM 240A
2.5 800
Energy (µJ)

2.0
600
1.5
400
1.0

200
0.5

0.0 0
-5 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current

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1

Thermal Response ( Z thJC ) °C/W

D = 0.50

0.1
0.20
R1 R2 R3 R4
Ri (°C/W) I (sec)
0.10 R1 R2 R3 R4
J C 0.00757 0.000006
J C
0.05 1 2 3 4 0.06508 0.000064
1 2 3 4
0.01 0.02 0.18313 0.001511
Ci= iRi
0.01 Ci= iRi
0.14378 0.009800
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
0.01
Avalanche Current (A)

Tstart =25°C (Single Pulse)

100

0.05
0.10

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 14. Avalanche Current vs. Pulse width

320
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 14, 15:
280 BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.infineon.com)
ID = 240A 1. Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

240 Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.
200 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
160 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
120
during avalanche).
6. Iav = Allowable avalanche current.
80
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
40 25°C in Figure 13, 14).
tav = Average time in avalanche.
0 D = Duty cycle in avalanche = tav ·f
25 50 75 100 125 150 175 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature

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4.5 10
IF = 96A
9
VGS(th) , Gate threshold Voltage (V)
4.0 V R = 34V

8 TJ = 25°C
3.5
TJ = 125°C
7
3.0

IRRM (A)
6
2.5
ID = 250µA
5
ID = 1.0mA
2.0
ID = 1.0A 4
1.5
3

1.0 2
-75 -50 -25 0 25 50 75 100 125 150 175 200 100 200 300 400 500
T J , Temperature ( °C ) diF /dt (A/µs)

Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt

12 140
IF = 144A IF = 96A
11
V R = 34V 120 V R = 34V
10
TJ = 25°C TJ = 25°C
9 TJ = 125°C TJ = 125°C
100
8
QRR (nC)
IRRM (A)

7 80

6
60
5

4
40
3

2 20
100 200 300 400 500 100 200 300 400 500
diF /dt (A/µs) diF /dt (A/µs)

Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt

180
IF = 144A
160 V R = 34V

140 TJ = 25°C
TJ = 125°C
120
QRR (nC)

100

80

60

40

20
100 200 300 400 500
diF /dt (A/µs)

Fig. 20 - Typical Stored Charge vs. dif/dt

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Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

15V V(BR)DSS
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01
I AS

Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Id
Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform

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D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))

D2Pak - 7 Pin Part Marking Information

Part Number AUFS3004-7P

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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D2Pak - 7 Pin Tape and Reel

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 AUIRFS3004-7P
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak 7 Pin MSL1
Class M4 (+/- 800V)†
Machine Model
AEC-Q101-002
Class H3A (+/- 6000V)†
ESD Human Body Model
AEC-Q101-001
Class C5 (+/- 2000V)†
Charged Device Model
AEC-Q101-005
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Updated datasheet based on new IR corporate template .
3/4/2015
 Updated part marking from "AUS3004-7P" to "AUFS3004-7P" on page 10.
 Updated datasheet with corporate template
10/20/2015
 Corrected ordering table on page 1.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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