IRLR2905Z IRLU2905Z: Automotive Mosfet
IRLR2905Z IRLU2905Z: Automotive Mosfet
IRLR2905Z IRLU2905Z: Automotive Mosfet
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and D-Pak I-Pak
a wide variety of other applications. IRLR2905Z IRLU2905Z
nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact
Ciss Input Capacitance ––– 1570 ––– VGS = 0V
Coss Output Capacitance ––– 230 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 840 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 180 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 290 ––– VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 42 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 240 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 36A, VGS = 0V e
trr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = 36A, VDD = 28V
Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 100A/μs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR/U2905Z
1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
ID, Drain-to-Source Current (A)
10 10
3.0V
1000.0 60
T J = 25°C T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
50
100.0 T J = 175°C 40
T J = 175°C
30
10.0
20
VDS = 10V
10 VDS = 8.0V
≤ 60μs PULSE WIDTH
1.0 380μs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0
0 10 20 30 40 50
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
2500 12
VGS = 0V, f = 1 MHZ
ID= 36A
C iss = C gs + C gd, C ds SHORTED
VDS= 44V
Ciss 8
1500
1000
4
500 2
Coss
Crss
0 0
1 10 100 0 10 20 30 40 50
1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0 100
T J = 175°C
10.0 10 100μsec
T J = 25°C
1msec
1.0 1
Tc = 25°C 10msec
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)
60 2.0
LIMITED BY PACKAGE ID = 30A
40 1.5
(Normalized)
30
20
1.0
10
0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10 R1 R2
0.1 R1 R2 Ri (°C/W) τi (sec)
0.05 τJ τC
τJ τ 0.765 0.000269
0.02 τ1 τ2
τ1 τ2 0.6141 0.001614
0.01
0.01 Ci= τi/Ri
Ci i/Ri
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IRLR/U2905Z
240
15V
0
25 50 75 100 125 150 175
I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG
10 V
QGS QGD 3.0
VGS(th) Gate threshold Voltage (V)
VG
2.5
Charge
Fig 13a. Basic Gate Charge Waveform 2.0 ID = 250μA
Current Regulator
Same Type as D.U.T.
50KΩ 1.5
12V .2μF
.3μF
+
V
D.U.T. - DS
1.0
VGS -75 -50 -25 0 25 50 75 100 125 150 175
3mA T J , Temperature ( °C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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IRLR/U2905Z
1000
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
td(on) tr t d(off) tf
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IRLR/U2905Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
6.73 (.265) 2.19 (.086)
6.35 (.250) 1.14 (.045)
0.89 (.035)
-A-
5.46 (.215) 1.27 (.050) 0.58 (.023)
5.21 (.205) 0.88 (.035) 0.46 (.018)
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235) 10.42 (.410)
1.02 (.040) 9.40 (.370) LEAD ASSIGNMENTS
1.64 (.025) 1 2 3
1 - GATE
0.51 (.020) 2 - DRAIN
-B- MIN. 3 - SOURCE
1.52 (.060) 4 - DRAIN
1.15 (.045)
0.89 (.035)
3X
0.64 (.025) 0.58 (.023)
1.14 (.045) 0.46 (.018)
2X 0.25 (.010) M A M B
0.76 (.030)
AS S EMBLY
LOT CODE
Notes : T his part marking information applies to devices produced after 02/26/2001
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IRLR/U2905Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
1 2 3
-B- NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2.28 (.090)
9.65 (.380) 2 CONTROLLING DIMENSION : INCH.
1.91 (.075) 8.89 (.350) 3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
AS S EMBLY
LOT CODE
Notes : T his part marking information applies to devices produced after 02/26/2001
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IRLR/U2905Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax, starting TJ = 25°C, L = 0.089mH
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 36A, VGS =10V. Part not avalanche performance.
recommended for use above this value. This value determined from sample failure population. 100%
Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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