PD - 94969B

IRF1405PbF
Typical Applications HEXFET® Power MOSFET
l Industrial motor drive
D
Benefits
VDSS = 55V
l Advanced Process Technology
l Ultra Low On-Resistance RDS(on) = 5.3mΩ
l Dynamic dv/dt Rating G
l 175°C Operating Temperature
l Fast Switching ID = 169A†
S
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free

Description D
This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating S
D
temperature, fast switching speed and improved repetitive G
avalanche rating. These benefits combine to make this
TO-220AB
design an extremely efficient and reliable device for use in
a wide variety of applications.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 h
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 h A
IDM Pulsed Drain Current c 680
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy d 560 mJ
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy i mJ
dv/dt Peak Diode recovery dv/dt e 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw y
10 lbf in (1.1N m) y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
www.irf.com 1
05/12/10
IRF1405PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.6 5.3 mΩ VGS = 10V, ID = 101A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 101A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 170 260 ID = 101A
Qgs Gate-to-Source Charge ––– 44 66 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 62 93 VGS = 10V f
td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V
tr Rise Time ––– 190 ––– ID = 101A
td(off) Turn-Off Delay Time ––– 130 ––– ns RG = 1.1 Ω
tf Fall Time ––– 110 ––– VGS = 10V f
LD Internal Drain Inductance Between lead, D
––– 4.5 –––
nH 6mm (0.25in.)
G
LS Internal Source Inductance from package
––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 5480 ––– VGS = 0V

Coss Output Capacitance ––– 1210 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 280 ––– pF ƒ = 1.0MHz, See Fig.5
Coss Output Capacitance ––– 5210 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 900 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance g ––– 1500 ––– VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 169 h A
MOSFET symbol
showing the
ISM Pulsed Source Current integral reverse
(Body Diode)c ––– ––– 680
p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V f
TJ = 25°C, IS = 101A, VGS = 0V
trr Reverse Recovery Time ––– 88 130 ns T J = 25°C, IF = 101A
Qrr Reverse Recovery Charge ––– 250 380 nC di/dt f
= 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Starting TJ = 25°C, L = 0.11mH
† Calculated continuous current based on maximum allowable
RG = 25Ω, IAS = 101A. (See Figure 12).
junction temperature. Package limitation current is 75A.
ƒ ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C ‡ Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
„ Pulse width ≤ 400µs; duty cycle ≤ 2%. avalanche performance.
2 www.irf.com
 IRF1405PbF

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100

100

10

4.5V 4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 ° C
1 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
TJ = 25 ° C ID = 169A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 175 ° C 2.5

100 2.0
(Normalized)

1.5

10 1.0

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
 IRF1405PbF
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd 20
ID = 101A
Coss = Cds + Cgd VDS = 44V
VDS = 27V

VGS , Gate-to-Source Voltage (V)

C, Capacitance(pF)

10000 16
Ciss

12
Coss
1000

8
Crss

100 4
1 10 100
FOR TEST CIRCUIT
VDS, Drain-to-Source Voltage (V) SEE FIGURE 13
0
0 60 120 180 240 300
QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)

TJ = 175 ° C
ID, Drain-to-Source Current (A)

1000
100

100 100µsec
TJ = 25 ° C
10 1msec
10

Tc = 25°C
Tj = 175°C 10msec
V GS = 0 V Single Pulse
1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF1405PbF

200 RD
LIMITED BY PACKAGE VDS

VGS
160 D.U.T.
RG
ID , Drain Current (A)

+
-VDD
120
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80

Fig 10a. Switching Time Test Circuit

40
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.1 0.20

0.10
0.05
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) PDM
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF1405PbF

15V 1200
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 41A
1000 71A
VDS L DRIVER BOTTOM 101A

800
RG D.U.T +
- VDD
IAS A
600
20V
tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 400

V(BR)DSS
tp 200

0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.0

VG 3.5
VGS(th) , Variace ( V )

Charge 3.0 ID = 250µA

Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.5

50KΩ

12V .2µF 2.0

.3µF

+
V
D.U.T. - DS
1.5
VGS -75 -50 -25 0 25 50 75 100 125 150 175

3mA T J , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
6 www.irf.com
 IRF1405PbF
1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs
Avalanche Current (A)

100 0.01 avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to
avalanche losses
0.05

0.10
10

1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)
600 1. Avalanche failures assumption:
TOP Single Pulse Purely a thermal phenomenon and failure occurs at a
BOTTOM 10% Duty Cycle temperature far in excess of T jmax. This is validated for
500 ID = 101A
EAR , Avalanche Energy (mJ)

every part type.

2. Safe operation in Avalanche is allowed as long asT jmax is
400 not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
300 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
200 voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
100
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0 D = Duty cycle in avalanche = tav ·f
25 50 75 100 125 150 175
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav
www.irf.com 7
IRF1405PbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 17. For N-channel HEXFET® power MOSFETs

8 www.irf.com
 IRF1405PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

3$57180%(5
/27&2'( ,17(51$7,21$/

$66(0%/('21:: 5(&7,),(5

,17+($66(0%/</,1(& /2*2

'$7(&2'(

<($5 
1RWH3LQDVVHPEO\OLQHSRVLWLRQ $66(0%/<

LQGLFDWHV/HDG)UHH :((.
/27&2'(

/,1(&

TO-220AB packages are not recommended for Surface Mount Application.

Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2010
www.irf.com 9