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© Ahmad El-Banna

Integrated Technical Education Cluster


At AlAmeeria‎

J-601-1448
Electronic Principals

Lecture #5

November 2014
FET Biasing & AC Analysis
Instructor:
Dr. Ahmad El-Banna
J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Agenda Note!
Same concepts of the BJT, so we will
just overview the FET transistors.

Construction and Characteristics

FET Biasing

Design and Troubleshooting

JFET small signal Model

FET Amplifier Networks


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Practical Applications
CHARACTERISTICS
CONSTRUCTION AND
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Construction
• One of the most important characteristics
of the FET is its high input impedance.

• FETs are more temperature stable than


BJTs, and FETs are usually smaller than BJTs,
making them particularly useful in
integrated-circuit (IC) chips.

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Construction..
N-channel

J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Characteristics & Equations

J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Depletion-Type MOSFET
• There is no direct electrical connection between
the gate terminal and the channel of a MOSFET.
• It is the insulating layer of SiO2 in the MOSFET
construction that accounts for the very desirable
high input impedance of the device.

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Depletion-Type MOSFET

J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Other MOSFETS
• VMOS AND UMOS POWER MOSFETs • CMOS

• MESFET

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FET BIASING
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


FIXED-BIAS CONFIGURATION

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Example

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Voltage-Divider Bias

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Example

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


DESIGN AND TROUBLESHOOTING
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Design Example

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Troubleshooting

The level of VDS is typically between 25% and


75% of VDD .

The continuity of a network can be checked


simply by measuring the voltage across any
resistor of the network.

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JFET SMALL SIGNAL MODEL
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


JFET small signal Model

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
Fixed-Bias Configuration

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phase shift of 180° between input and output voltages.


VOLTAGE-DIVIDER CONFIGURATION

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


FET AMPLIFIER NETWORKS
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Design FET Amplifier Network

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Table
Summary

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Cascaded Configuration

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


PRACTICAL APPLICATIONS
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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Three-Channel Audio Mixer

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


Motion Detection System

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J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna


J-601-1448 , Lec#5 , Nov 2014 © Ahmad El-Banna
• For more details, refer to:
• Chapter 6,7,8, Electronic Devices and Circuits, Boylestad.
• The lecture is available online at:
• https://speakerdeck.com/ahmad_elbanna
• For inquires, send to:
• ahmad.elbanna@feng.bu.edu.eg

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