SAMWIN SW7N60

Features General Description

N-Channel MOSFET This power MOSFET is produced in CHMC with

BVDSS (Minimum)
advanced VDMOS process, planar stripe. This
: 600 V
RDS(ON) (Maximum)
technology enable power MOSFET to have better
: 1 ohm
ID
characteristics, such as fast switching time, low on
: 7.0 A resistance, low gate charge and especially excellent
Qg (Typical) : 30 nc avalanche characteristics. This power MOSFET is
PD (@TC=25 ℃) : 142 W usually used at high efficient DC to DC converter
block and switch mode power supply.

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V

Continuous Drain Current (@Tc=25℃) 7 A

ID
Continuous Drain Current (@Tc=100℃) 4.7 A

IDM Drain Current Pulsed (Note 1) 28 A

VGS Gate to Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ

EAR Repetitive Avalanche Energy (Note 1) 14.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Total Power Dissipation (@Tc=25℃) 142 W

PD
Derating Factor above 25℃ 1.14 W/℃

TSTG,TJ Operating junction temperature &Storage temperature -55~+150 ℃

TL Maximum Lead Temperature for soldering purpose, 1/8 from Case 300 ℃
for 5 seconds.

Thermal Characteristics
Value Units
Symbol Parameter
Min Typ Max
RèJC Thermal Resistance, Junction-to-Case - - 0.88 ℃/ W

RèCS Thermal Resistance, Case-to-Sink - 0.5 ℃/ W

RèJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W

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 SAMWIN SW7N60
Electrical Characteristics (Tc=25℃ unless otherwise noted)

Value
Symbol Parameter Test Conditions Units
Min Typ Max
Off Characteristics
BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA 600 - - V

△BVDSS /△ Breakdown Voltage Temperature

ID=250uA,referenced to 25℃ - 0.67 - V/℃
Tj coefficient

VDS=600V, VGS=0V
IDSS Drain-Source Leakage Current - - 1 uA
VDS=480V, Tc=125℃

Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA

IGSS
Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250uA 3.0 - 5.0 V

Static Drain-Source On-state

RDS(ON) VGS=10V,ID=3.5A - 0.85 1 ohm
Resistance

Dynamic Characteristics
Ciss Input Capacitance - 1200 1500

Coss Output Capacitance VGS=0V,VDS=25V, f=1MHz - 150 190 pF

Crss Reverse Transfer Capacitance - 18 25

Switching Characteristics
td(on) Turn-on Delay Time - 35 70

tr Rise Time VDD=300V,ID=7.0A - 79 130

ns
td(off) Turn-off Delay Time - 80 240
(Note4,5)
tf Fall Time - 52 100

Qg Total Gate Charge - 30 -

VDS=480V,VGS =10V, ID=7.0A
Qgs Gate-Source Charge - 6.5 - nc

Qgd Gate-Drain Charge (Miller Charge) (Note4,5) - 13 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse - - 7
p-n Junction Diode
in the MOSFET A
ISM Pulsed Source Current - - 28

VSD Diode Forward Voltage IS=7.0A,VGS=0V - - 1.4 V

trr Reverse Recovery Time IS=7.0A,VGS=0V, - 320 - ns

dIF/dt=100A/us
Qrr Reverse Recovery Charge - 2.4 - uc

※NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH,IAS=7.0A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. ISD≤7.0A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature. 2/6
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 SAMWIN SW7N60
VGS
top:10V
8V
10 7.5V 10
7V
6.5V
6V
5.5V o
25 C

ID,Drain Current [A]

bottom:5.5V
ID,Drain Current [A]

o
150 C
1 1

 Note:
 Note:
1.250us pulse test
1.VDS=50V
2.TC=25 C o

2.250us pulse test.

0.1
0.1
0.1 1 10 2 4 6 8 10

VDS,Drain-to-Source voltage [V] VGS, Gate-Source Voltage [V]

Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

2.5

10
IDR,Reverse Drain Current[A]

2.0 VGS=20V
Drain-Source On-Resistance[ohm]

VGS=10V
1.5
o o
150 C 25 C
RDS(ON)

1.0 1

0.5 Note:

 Note:TJ=25 C
o 1.vGS=0v
2.250us test

0.0 0.1
0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2

ID, Drain Current[A] VSD,Source-Drain Voltage[V]

Fig 3. On Resistance Variation vs. Fig 4. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature

2000 12

Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd 10
VDS=480V
1600 Crss = Cgd
Ciss VDS=300V
V GS,Gate-Source Voltage [V]

8
VDS=120V
Capacitance [pF]

1200 Coss
6

800
 Note:
4
Crss 1.VGS=0V
2.f=1MHz.
400
2
Note:ID=7A

0 0
0.1 1 10 0 10 20 30 40 50 60 70

VDS,Drain-Source Voltage [V] QG,Total Gate Charge [nC]

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics

(Non-Repetitive)

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 SAMWIN SW7N60
1.2 3.0
Drain-Source Breakdown Voltage

2.5

1.1

Drain-Source On-Resistance
BV DSS[Normalized]

2.0

RDs(on)(Normalized)
1.0 1.5

1.0

0.9
 Note: Note:
1.VGS=0V 0.5 1.VGS=10V
2.ID=250uA 2.ID=3.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ,Junction Temperatur [ C]
o TJ,Junction Temperature[ C]

Fig 7. Breakdown Voltage Variation vs. Fig 8. On-Resistance Variation vs.

Junction Temperature Junction Temperature

8
100 Operation In This Area
Limted By RDS(ON)

10 100us
ID, Drain Current[A]

ID, Drain Current[A]

1ms
10ms 4

DC

1
Note: 2
1.Tc=25C
2.Tj=150C
3.Single Pulse
0.1 0
1 10 100 1000 25 50 75 100 125 150
o
VD,Drain-Source Voltage[V] Tc,Case Temperature [ C]

Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current

Vs. Case Temperature

1
(t),Thermal Response

D = 0 .5

0 .2

0 .1 0 .1

0 .0 5
0 .0 2

0 .0 1  N o te :
JC

o
1 . Z  JC ( t ) = 0 . 8 8 C / w M a x
Z

s in g le p u ls e
0 .0 1 2 . D u t y F a c t o r ,D = t 1 / t2
3 . T j-T c = P D M * Z  J C ( t )

1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10

t 1 ,S q u a r e W a v e P u ls e D u r a ti o n ( s e c )
Fig 11. Transient Thermal Response Curve

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 SAMWIN SW7N60

VGS
Same Type
Qg
as DUT 10V
50KÙ
200nF
300nF
VDS Qgs Qgd
VGS

DUT
1mA

Charge

Fig 12. Gate Charge test Circuit & Waveforms

RL
VDS
VDD VDS
90%
(0.5 rated VDS)

10V DUT Vin 10%

RG
Pulse
Generator tf
td(on) tr
ton td(off)
toff

Fig 13. Switching test Circuit & Waveforms

L
VDS 1 BVDSS
EAS= --- LLIAS2---------------
VDD 2
BVDSS-VDD
BVDSS
IAS
RG
VDS(t)
VDD ID(t)
DUT
10V
tp Time

Fig 14. Unclamped Inductive Switching test Circuit & Waveforms

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