TXDVxx12

12 A high voltage Triacs

Features
A2
■ On-state current (IT(RMS)): 12 A
■ Max. blocking voltage (VDRM/VRRM): 1200 V
■ Gate current (IGT): 100 mA G

■ Commutation @ 10 V/µs: up to 42.5 A/ms A1

■ Noise immunity: 2 kV/µs

■ Insulated package:
– 2,500 V rms (UL recognized: E81734).

Description
A1
The TXDVxx12 series uses a high performance A2
G
alternistor technology.
TO-220AB
Featuring very high commutation levels and high insulated
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).

Table 1. Device summary

Parameter TXDV812RG TXDV1212RG

Blocking voltage VDRM/VRRM 800 V 1200 V

On-state current IT(RMS) 12 A
Gate current IGT 100 mA

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Characteristics TXDVxx12

1 Characteristics

Table 2. Absolute maximum ratings (limiting values)

Symbol Parameter Value Unit

IT(RMS) On-state rms current (180° conduction angle) Tc = 90 °C 12 A

VDRM TXDV812 800 V
Repetitive peak off-state voltage Tj = 125 °C
VRRM TXDV1212 1200
tp = 2.5 ms 170
ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 125 A
tp = 10 ms 120
I2t I2t value for fusing tp = 10 ms 72 A2 S
Critical rate of rise of on-state current
dI/dt F = 50 Hz 100 A/µs
IG = 500 mA dIG/dt = 1 A/µs
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 125
VINS(RMS)(1) Insulation rms voltage 2500 V
1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Value Unit
Symbol Test conditions Quadrant
TXDV812 TXDV1212
IGT I-II-III MAX. 100 mA
VD = 12 V DC, RL = 33 Ω
VGT I-II-III MAX. 1.5 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 110 °C I-II-III MIN. 0.2 V
tgt VD = VDRM IG = 500 mA dIG/dt = 3 A/µs I-II-III TYP. 2.5 µs
I-III 100
IL IG = 1.2 x IGT TYP. mA
II 200
IH (1) IT = 500 mA Gate open MAX. 100 mA
Linear slope up to:
dV/dt (1) Tj = 125 °C MIN. 2 kV/µs
VD = 67% VDRM Gate open
(dI/dt)c (1) (dV/dt)c = 10 V/µs Tj = 110 °C MIN. 42.5 30 A/ms
(1)
VTM ITM = 17 A tp = 380 µs MAX. 1.95 V
Vto (1)
Threshold voltage MAX. 1.21 V
(1)
Rd Dynamic resistance MAX. 40 mΩ
IDRM Tj = 25 °C 0.01
VDRM = VRRM MAX. mA
IRRM Tj = 110 °C 2 5
1. For either polarity of electrode A2 voltage with reference to electrode A1.

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TXDVxx12 Characteristics

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

PG(AV) Average gate power dissipation 1 W

PGM Peak gate power dissipation tp = 20 µs 10 W
IGM Peak gate current tp = 20 µs 4 A
VGM Peak positive gate voltage tp = 20 µs 16 V

Table 5. Thermal resistance

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient 60 °C/W

Rth(j-c) DC Junction to case for DC 2.5 °C/W
Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.9 °C/W

Figure 1. Max. rms power dissipation versus Figure 2. Max. rms power dissipation and
on-state rms current (F = 50Hz). max. allowable temperatures
(curves limited by (dI/dt)c) (Tamb and Tcase) for various Rth
P(W) P(W) Tcase(° C)
20
20
Rth case to ambient
18 Rth = 0° C/W -90
18 1° C/W
α = 180° 2° C/W
16
16 4° C/W -95
14 α = 120°
14
-100
12
α = 90° 12
10 -105
10
8 α = 60°
8 -110
6
6
α = 30° 180° -115
4 α 4
α
2 -120
IT(RMS)(A) 2
Tamb(° C)
0
0 -125
0 1 2 3 4 5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140

Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal
temperature impedance versus pulse duration
IT(RMS)(A) Zth/Rth
14 1

12
Zth(j-c)

10 α = 180°

8
0.1 Zth(j-a)

2
TC(°C) tp(s)
0 0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

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Characteristics TXDVxx12

Figure 5. Relative variation of gate trigger Figure 6. Non repetitive surge peak on-state
current and holding current versus current versus number of cycles
junction temperature
IGT[Tj] . IH[Tj]
ITSM(A)
IGT[Tj=25°C] IH[Tj=25°C] 120
2.5

100 t = 20 ms

2.0 One cycle

80

1.5
IGT
60 Tj initial=25°C
IH

1.0
40

0.5
20
Tj(°C) Number of cycles
0.0 0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 0 10 100 1000

Figure 7. Non-repetitive surge peak on-state Figure 8. On-state characteristics (maximum

current for a sinusoidal pulse and values)
corresponding values of I2t

ITSM(A), I2t (A2s) ITM(A)

1000
Tj initial = 25°C Tj max.:
Vt0=1.21V
Rt=0.040Ω
ITSM

100
Tj initial = 25° C
100

I2t

10 Tj max.

tp(ms) VTM(V)
10 1
1 2 5 10 1 2 3 4 5 6

Figure 9. Safe turn-off operating area

(dV/dt)c(V/µs)
1000
Tj = 110° C

100

10

(dI/dt)c(A/ms)
1
1 10 100

4/7 Doc ID 18272 Rev 2

TXDVxx12 Package information

2 Package information

● Epoxy meets UL94,V0

● Cooling method: C (by conduction)
● Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Table 6. TO-220AB insulated dimensions

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147
B C
a2 13.00 14.00 0.511 0.551
ØI b2
B 10.00 10.40 0.393 0.409
L
F b1 0.61 0.88 0.024 0.034
A b2 1.23 1.32 0.048 0.051
I4 C 4.40 4.60 0.173 0.181
l3

c2
c1 0.49 0.70 0.019 0.027
a1

c2 2.40 2.72 0.094 0.107

l2
a2
e 2.40 2.70 0.094 0.106

M
F 6.20 6.60 0.244 0.259
b1 c1
e ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

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Ordering information TXDVxx12

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

TXDV812RG TXDV812 TO-220AB

2.3 g 50 Tube
TXDV1212RG TXDV1212 insulated

4 Revision history

Table 8. Document revision history

Date Revision Changes

30-Mar-2011 1 Initial release.

13-Jan-2012 2 Updated dI/dt in Table 2, and added Vto and Rd in Table 3

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TXDVxx12

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