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    Experiment: 01 Characteristics of PN Junction Diode Aim

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    aty27062004
    This document describes two experiments involving PN junction diodes and Zener diodes. The first experiment involves plotting the forward characteristics of a silicon PN junction diode and finding its dynamic resistance. The second experiment involves plotting the reverse characteristics of a Zener diode and calculating its dynamic resistance under reverse bias conditions. Both experiments involve measuring voltage and current values, plotting graphs, and determining important characteristics and measurements of the diodes, including cut-in voltage, dynamic resistance, and Zener voltage.

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    Experiment: 01 Characteristics of PN Junction Diode Aim

    Uploaded by

    aty27062004
    24 views4 pages
    This document describes two experiments involving PN junction diodes and Zener diodes. The first experiment involves plotting the forward characteristics of a silicon PN junction diode and finding its dynamic resistance. The second experiment involves plotting the reverse characteristics of a Zener diode and calculating its dynamic resistance under reverse bias conditions. Both experiments involve measuring voltage and current values, plotting graphs, and determining important characteristics and measurements of the diodes, including cut-in voltage, dynamic resistance, and Zener voltage.

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    This document describes two experiments involving PN junction diodes and Zener diodes. The first experiment involves plotting the forward characteristics of a silicon PN junction diode and finding its dynamic resistance. The second experiment involves plotting the reverse characteristics of a Zener diode and calculating its dynamic resistance under reverse bias conditions. Both experiments involve measuring voltage and current values, plotting graphs, and determining important characteristics and measurements of the diodes, including cut-in voltage, dynamic resistance, and Zener voltage.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    24 views4 pages

    Experiment: 01 Characteristics of PN Junction Diode Aim

    Uploaded by

    aty27062004
    This document describes two experiments involving PN junction diodes and Zener diodes. The first experiment involves plotting the forward characteristics of a silicon PN junction diode and finding its dynamic resistance. The second experiment involves plotting the reverse characteristics of a Zener diode and calculating its dynamic resistance under reverse bias conditions. Both experiments involve measuring voltage and current values, plotting graphs, and determining important characteristics and measurements of the diodes, including cut-in voltage, dynamic resistance, and Zener voltage.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 4

    .

    EXPERIMENT: 01

    CHARACTERISTICS OF PN JUNCTION DIODE

    Aim:

    1. To plot the forward characteristics of a silicon PN junction


    2. To find the dynamic resistance of the diode

    Components and equipments required:

    Diode,resistors,multimeters

    Theory:

    The diode consists of p- and n-type material fabricated to form a junction. The junction between n and p
    materials is the basis for the name junction diode. A p-n junction is formed either with Germanium or
    Silicon crystal. The p and n type regions are referred to as anode and cathode respectively .A p-n junction
    diode is a one way device (i.e. conduct under forward-biased condition only) offering low resistance
    when forward biased and behaves as an insulator (very high or infinite resistance) when reverse biased.

    Forward characteristics:

    The diode is forward biased and the applied voltage is increased from zero. Hardly any current
    flows through the device till the barrier voltage (or cut-in voltage )(0.2V for Ge and 0.7V for Si)is
    reached.Once the diode is turned on, the forward current is noted for different values of forward voltage
    in steps of 0.2V.The forward characteristics is drawn by plotting a graph between voltage (X-axis) and
    current(Y-axis).

    At a given operating point the static resistance (R d) and the dynamic resistance (rd) are found from
    its characteristics .The static resistance (also called dc resistance) is defined as the ratio of the voltage to
    current at the operating point.

    Rd=V/I ohms

    Thus the dc resistance is obtained by direct application of ohm’s law. The dynamic resistance (also called
    ac resistance) is a ratio of small change in voltage, ΔV to small change in current ΔI) is given by

    rd= ΔV/ ΔI ohms

    Circuit Diagram:

    Basic Electronics Lab Page 1


    Observation: Model Graph

    Sl. Voltage(V) Current(mA)


    No

    Calculation:

    1. Dynamic resistance rd= ΔV/ ΔI=………… ohms

    2. Cut in voltage,Vc=…………Volts

    Basic Electronics Lab Page 2


    Result:

    EXPERIMENT: 02

    CHARACTERISTICS OF ZENER DIODE

    Aim:

    1. To plot the reverse characteristics of a Zener diode


    2. To calculate dynamic resistance of a Zener diode reverse conditions.

    Components and equipments required:

    ZenerDiode,resistors,multimeters

    Theory:

    Zener or breakdown diodes are semi-conductor p-n junction diodes with controlled reverse bias
    properties which make them extremely useful in many applications especially as voltage-regulating
    devices. The reverse characteristics exhibits a region in which the reverse voltage (Zener voltage V z) is
    almost independent of the Zener diode current I z. The Zener voltage of any particular diode is controlled
    by the amount of doping applied during the manufacturing process. Typical values range from 2V to
    200V, with power handling capabilities of 100W.When this circuit is properly designed, the load voltage
    VL remains at an essentially constant value, even though the input voltage and the load resistance vary
    over wide ranges. But if the reverse bias is increased, at a particular voltage the diode starts conducting
    heavily. This voltage is called breakdown voltage. When breakdown occur the high current in the circuit
    is limited by a resistance in series with the Zener diode. Once the diode starts conducting it maintains a
    constant voltage across its terminals whatever be the current through it. Hence it has a very low dynamic
    resistance. Zener diodes with Zener voltages of 5.6V, 6.2V, 6.8V, 7.5V, 9.1V etc are available.

    Circuit Diagram:

    Basic Electronics Lab Page 3


    Observation: Model Graph:

    Sl.No Voltage(V) Current(mA)

    Calculation:

    1. Dynamic resistance rd= ΔV/ ΔI=………… ohms

    2. Breakdown voltage, Vz=…………Volts

    Result:

    Basic Electronics Lab Page 4

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