IPB107N20NA IPP110N20NA

OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS 200 V
• N-channel, normal level
RDS(on),max (TO263) 10.7 mW
• Excellent gate charge x R DS(on) product (FOM)
ID 88 A
• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type IPB107N20NA IPP110N20NA

Package PG-TO263-3 PG-TO220-3

Marking 107N20NA 110N20NA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 88 A

T C=100 °C 63

Pulsed drain current1) I D,pulse T C=25 °C 352

Avalanche energy, single pulse E AS I D=80 A, R GS=25 W 560 mJ

Reverse diode dv /dt dv /dt 10 kV/µs

Gate source voltage V GS ±20 V

Power dissipation P tot T C=25 °C 300 W

Operating and storage temperature T j, T stg -55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

1)
See figure 3

Rev. 2.1 page 1 2011-05-11

 IPB107N20NA IPP110N20NA

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.5 K/W

Thermal resistance, junction - R thJA minimal footprint - - 62

ambient
6 cm2 cooling area2) - - 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 200 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4

V DS=160 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=160 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA

V GS=10 V, I D=88 A,
Drain-source on-state resistance R DS(on) - 9.9 11 mW
(TO220)

V GS=10 V, I D=88 A,
- 9.6 10.7
(TO263)

2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 2.1 page 2 2011-05-11

 IPB107N20NA IPP110N20NA

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristic4)

Input capacitance C iss - 5340 7100 pF

V GS=0 V, V DS=100 V,
Output capacitance C oss - 401 533
f =1 MHz
Reverse transfer capacitance C rss - 5 -

Turn-on delay time t d(on) - 18 - ns

Rise time tr V DD=100 V, - 26 -

V GS=10 V, I D=44 A,
Turn-off delay time t d(off) R G=1.6 W - 41 -

Fall time tf - 11 -

Gate Charge Characteristics3)

Gate to source charge Q gs - 23 - nC

Gate to drain charge Q gd - 8 -

V DD=100 V, I D=44 A,
Switching charge Q sw - 15 -
V GS=0 to 10 V
Gate charge total Qg - 65 87

Gate plateau voltage V plateau - 4.4 - V

Output charge Q oss V DD=100 V, V GS=0 V - 162 216 nC

Reverse Diode4)

Diode continous forward current IS - - 88 A

T C=25 °C
Diode pulse current I S,pulse - - 352

V GS=0 V, I F=88 A,
Diode forward voltage V SD - 1 1.2 V
T j=25 °C

Reverse recovery time t rr V R=100 V, I F=44 A, - 142 ns

Q rr di F/dt =100 A/µs

Reverse recovery charge - 640 - nC

3)
See figure 16 for gate charge parameter definition
4)
Not subjected to production test - verified by design/characterization

Rev. 2.1 page 3 2011-05-11

 IPB107N20NA IPP110N20NA

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V

320 100

280

80
240

200
60
Ptot [W]

ID [A]
160

40
120

80
20

40

0 0
0 50 100 150 200 0 50 100 150 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 100

1 µs

10 µs

100 µs
102
0.5
ZthJC [K/W]

1 ms
ID [A]

0.2
101 10-1

10 ms 0.1

DC 0.05
100
0.02

0.01

single pulse

10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

Rev. 2.1 page 4 2011-05-11

 IPB107N20NA IPP110N20NA

5 Typ. output characteristics 6 Typ. drain-source on resistance

I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

200 20
10 V

175
4.5 V
7V
150 15

5V
125 5V

RDS(on) [mW]
7V
ID [A]

100 10 10 V

75

4.5 V
50 5

25

0 0
0 1 2 3 4 5 0 20 40 60 80 100 120 140
VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j
200 180

180 160

160
140

140
120
120
100
gfs [S]
ID [A]

100
80
80
60
60

40
40
175 °C 25 °C
20 20

0 0
0 2 4 6 8 0 25 50 75 100 125 150

VGS [V] ID [A]

Rev. 2.1 page 5 2011-05-11

 IPB107N20NA IPP110N20NA

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=88 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D
35 4

3.5
30

2700 µA
3
25

270 µA
2.5
RDS(on) [mW]

VGS(th) [V]
20
2

15 typ

1.5

10
1

5 0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180

Tj [°C] Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 103
Ciss

Coss

103

102

175 °C
C [pF]

IF [A]

102
25 °C

Crss
101

101

100
0 40 80 120 160 0 0.5 1 1.5 2
VDS [V] VSD [V]

Rev. 2.1 page 6 2011-05-11

 IPB107N20NA IPP110N20NA

13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=44 A pulsed
parameter: T j(start) parameter: V DD

100 10

25 °C
8
160 V
100 °C

100 V
125 °C
6
40 V

VGS [V]
IAS [A]

10

1 0
1 10 100 1000 0 20 40 60 80
tAV [µs] Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

230
V GS

Qg
220

210
VBR(DSS) [V]

200
V gs(th)

190

Q g(th) Q sw Q gate

180 Q gd
Q gs
-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.1 page 7 2011-05-11

 IPB107N20NA IPP110N20NA

PG-TO220-3: Outline

Rev. 2.1 page 8 2011-05-11

 IPB107N20NA IPP110N20NA

PG-TO263-3: Outline

Rev. 2.1 page 9 2011-05-11

 IPB107N20NA IPP110N20NA

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 2.1 page 10 2011-05-11