IPA90R1K2C3

CoolMOS® Power Transistor

Product Summary
Features
V DS @ T J=25°C 900 V
• Lowest figure-of-merit R ON x Qg
R DS(on),max @T J=25°C 1.2 Ω
• Extreme dv/dt rated
Q g,typ 29 nC
• High peak current capability

• Qualified according to JEDEC1) for target applications

PG-TO220 FP
• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

CoolMOS C3 is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

Type Package Marking

IPA90R1K2C3 PG-TO220 FP 9R1K2C

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current 2) ID T C=25 °C 3.1 A

T C=100 °C 1.9

Pulsed drain current3) I D,pulse T C=25 °C 10

Avalanche energy, single pulse E AS I D=0.92 A, V DD=50 V 68 mJ

Avalanche energy, repetitive t AR3),4) E AR I D=0.92 A, V DD=50 V 0.31

Avalanche current, repetitive t AR2),3) I AR 0.92 A

MOSFET dv /dt ruggedness dv /dt V DS=0...400 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f>1 Hz) ±30

Power dissipation P tot T C=25 °C 30 W

Operating and storage temperature T J, T stg -55 ... 150 °C

Mounting torque M2.5 screws 50 Ncm

Rev. 0.9 Preliminary Datasheet page 1 2008-02-21

 IPA90R1K2C3

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current 2) IS 2.8 A

T C=25 °C
Diode pulse current 3) I S,pulse 7

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 4.1 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T J=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 900 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=0.31 mA 2.5 3 3.5

V DS=900 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 µA
T j=25 °C

V DS=900 V, V GS=0 V,
- 10 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=2.8 A,
Drain-source on-state resistance R DS(on) - 0.93 1.2 Ω
T j=25 °C

V GS=10 V, I D=2.8 A,
- 2.5 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 1.3 - Ω

Rev. 0.9 Preliminary Datasheet page 2 2008-02-21

 IPA90R1K2C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 710 - pF

Output capacitance C oss f =1 MHz - 35 -

Effective output capacitance, energy

C o(er) - 23 -
related 6)
V GS=0 V, V DS=0 V
to 500 V
Effective output capacitance, time
C o(tr) - 86 -
related 7)

Turn-on delay time t d(on) - tbd - ns

Rise time tr V DD=400 V, - tbd -

V GS=10 V, I D=2.8 A,
Turn-off delay time t d(off) R G=tbd Ω - tbd -

Fall time tf - tbd -

Gate Charge Characteristics

Gate to source charge Q gs - tbd - nC

Gate to drain charge Q gd V DD=400 V, I D=2.8 A, - tbd -

Qg V GS=0 to 10 V
Gate charge total - 29 -

Gate plateau voltage V plateau - 4.5 - V

Reverse Diode

V GS=0 V, I F=2.8 A,
Diode forward voltage V SD - 0.8 1.2 V
T j=25 °C

Reverse recovery time t rr - tbd - ns

V R=400 V, I F=I S,
Reverse recovery charge Q rr - tbd - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - tbd - A
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width t p limited by T J,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.

Rev. 0.9 Preliminary Datasheet page 3 2008-02-21

 IPA90R1K2C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

40 100
limited by on-state
resistance

30

10
1 µs
P tot [W]

10 µs

I D [A]
20
100 µs
1 ms

10 ms
1

10 DC

0 0.1
0 25 50 75 100 125 150 1 10 100 1000
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T J=25 °C
parameter: D=t p/T parameter: V GS

101 15

20 V
10 V
8V
6V
0.5

5.5 V

100 0.2 10
Z thJC [K/W]

0.1
I D [A]

0.05

0.02 5V

0.01
10-1 5
single pulse
4.5 V

4V

10-2 0
10-5 10-4 10-3 10-2 10-1 100 101 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 0.9 Preliminary Datasheet page 4 2008-02-21

 IPA90R1K2C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T J=150 °C R DS(on)=f(I D); T J=150 °C
parameter: V GS parameter: V GS

7 20

20 V 10 V
10 V
8V
6 8V
6V
5.5 V
5V
15
5 4.5 V

R DS(on) [Ω]
4
I D [A]

10
5V
3
4V

2
5 4.8 V

4.5 V
4V
1

0 0
0 5 10 15 20 25 0 2 4 6 8 10
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T J); I D=2.8 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T J

3.2 15

25 °C
2.8

2.4
10
R DS(on) [Ω]

2
I D [A]

1.6
98 % 150 °C

5
1.2 typ

0.8

0.4 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 0.9 Preliminary Datasheet page 5 2008-02-21

 IPA90R1K2C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=2.8 A pulsed I F=f(V SD)
parameter: V DD parameter: T J

10 102

8 25 °C, 98%

120 V

150 °C, 98%

101
400 V
6
V GS [V]

I F [A]
150 °C 25 °C

4
100

0 10-1
0 10 20 30 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=0.92 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

80 1050

1000
60

950
V BR(DSS) [V]
E AS [mJ]

40

900

20
850

0 800
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

Rev. 0.9 Preliminary Datasheet page 6 2008-02-21

 IPA90R1K2C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

10000 6

1000 Ciss

E oss [µJ]
C [pF]

100 3

Coss
2

10

1
Crss

1 0
0 300 600 900 0 300 600 900
V DS [V] V DS [V]

Rev. 0.9 Preliminary Datasheet page 7 2008-02-21

 IPA90R1K2C3

Definition of diode switching characteristics

Rev. 0.9 Preliminary Datasheet page 8 2008-02-21

 IPA90R1K2C3

PG-TO220 FP Outline/Fully isolated package (2500VAC; 1minute)

Dimensions in mm/inches

Rev. 0.9 Preliminary Datasheet page 9 2008-02-21

 IPA90R1K2C3

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.

Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.

Rev. 0.9 Preliminary Datasheet page 10 2008-02-21