PD- 91503C

IRFP150N
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = 100V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.036W
l Fully Avalanche Rated G

ID = 42A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package TO-247AC
because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current  140
PD @TC = 25°C Power Dissipation 160 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 420 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 16 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RqJC Junction-to-Case ––– 0.95
RqCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RqJA Junction-to-Ambient ––– 40
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.036 W VGS = 10V, ID = 23A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 22A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 110 ID = 22A
Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V
tr Rise Time ––– 56 ––– ID = 22A
ns
td(off) Turn-Off Delay Time ––– 45 ––– RG = 3.6W
tf Fall Time ––– 40 ––– RD = 2.9W, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 1900 ––– VGS = 0V

Coss Output Capacitance ––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 42
(Body Diode) showing the
A G
ISM Pulsed Source Current integral reverse
––– ––– 140
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =23A, VGS = 0V „
trr Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Qrr Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width £ 300µs; duty cycle £ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.7mH Uses IRF1310N data and test conditions
RG = 25W , IAS = 22A. (See Figure 12)
ƒ ISD £ 22A, di/dt £ 180A/µs, VDD £ V(BR)DSS,
TJ £ 175°C

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 IRFP150N

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

8.0V 8.0V
I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

10 10 4.5V

4.5V

20us PULSE WIDTH 20us PULSE WIDTH

TJ = 25 oC TJ = 175 o C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 36A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

100 TJ = 25 o C 2.0
(Normalized)

TJ = 175 o C 1.5

10 1.0

0.5

VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (o C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP150N

3500 20
VGS = 0V, f = 1MHz ID = 22A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 80V
Crss = Cgd

VGS , Gate-to-Source Voltage (V)

3000 VDS = 50V
Coss = Cds + Cgd 16 VDS = 20V
C, Capacitance (pF)

2500
Ciss
12
2000

1500
8
Coss
1000

Crss 4
500
FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 20 40 60 80 100 120
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
I D , Drain Current (A)

100 10us

10 100us

10 1ms
1

TC = 25 o C 10ms
TJ = 175 o C
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP150N

50
RD
VDS

40 VGS
D.U.T.
RG
I D , Drain Current (A)

+
-VDD
30
10V
Pulse Width £1 µs
Duty Factor £ 0.1 %
20

Fig 10a. Switching Time Test Circuit

10
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50

0.20
P DM
0.10
0.1
0.05 t1
t2
0.02
0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP150N

1000
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 9.0A
16A
15V 800 BOTTOM 22A

L D R IVE R
VDS 600

RG D .U .T +
V
- DD 400
IA S A
20V
tp 0 .01 Ω
200
Fig 12a. Unclamped Inductive Test Circuit

0
25 50 75 100 125 150 175
V (B R )D S S Starting TJ , Junction Temperature o( C)
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms Current Regulator

Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP150N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
· Low Stray Inductance
· Ground Plane
ƒ
· Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG · dv/dt controlled by RG +
· Driver same type as D.U.T. VDD
-
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP150N

Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.143) -D -
15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
1 2 3 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
-C - T O -247-A C .
14.80 (.583)
4.30 (.170)
14.20 (.559)
3.70 (.145)

2.40 (.094) LE A D A S S IG N M E N TS
1.40 (.056) 0.80 (.031)
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 1 - G A TE
2X 2 - D R A IN
0.25 (.010) M C A S 2.60 (.102) 3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - D R A IN
3.40 (.133)
2X 3.00 (.118)

Part Marking Information

TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 A
W ITH A S S E M B L Y PART NUMBER
LOT CODE 3A1Q IN TE R N A TIO N A L
R E C T IF IE R IR F P E 3 0
LOGO
3A 1 Q 9 3 0 2
ASSEMBLY D A TE C O D E
LOT CODE (Y YW W )
YY = YEAR
W W W EEK

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http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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