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Chapter 2 Diodes

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Chapter -2

Diodes
Diode
• Two terminal non-linear device.
• Two types Vacuum and semiconductor diode.
• Due to various advantages of semiconductor diode it
replace vacuum diode.
• Used in many applications as clipper, clamper,
switching, rectification etc.
• Resistivity of semiconductor lies between conductors
insulators.
• Has negative temperature coefficient and highly
dependent on temperature.
• Germanium, silicon etc.
Energy bands in conductors,
Semiconductors and Insulators
• An energy band which separates the conduction band
and the valence band is called Forbidden gap.
• At room temperature, the energy gap of silicon and
germanium is 1.14 eV and 0.67 eV, respectively.
Hole current: Due to thermal energy this valence electron will leave
the valence band and enter into the conduction band.

• This will leave a vacancy at L , thus creating a hole there.


• Now the valance electron at M will come to fill the hole at L.
• This will result that the hole will disappear at L and appear at M
consequently, hole will be created at N, this process goes on and on.
• It can be noted from the fig. that valence electrons move along the
path PNML whereas, holes move along the path LMNP.
• In valance band, hole current due to flow of hole similar to positive
charge.
• In conduction band free electrons are available. I = Ie+ Ih
Types of Semiconductor
1. Intrinsic semiconductor: Pure semiconductors silicon ,
germanium.
2. Extrinsic semiconductor: Impure semiconductor, either
P-type or N-type.
• Process of adding impurity to pure semiconductor is
doping.
• When doped with trivalent impurities like boron, gallium
etc. P-type semiconductor is formed.
• When doped with pentavalent impurities like arsenic,
antimony etc. N-type semiconductor is formed.
Conductivity of semiconductor
PN junction diode
Forward biased PN junction diode:
• A negative voltage is applied to the N-type material and
a positive voltage is applied to the P-type material.
• During forward bias depletion layer decreases.
• The negative voltage repels electrons (positive voltage
repels holes) towards the junction giving them the
energy to cross the junction and combine with the holes
(recombination at junction), causes current flow through
the diode.
Reverse biased PN junction diode:
• A negative voltage is applied to the P-type material and
a positive voltage is applied to the N-type material.
• During reverse bias depletion layer increases.
• The negative voltage attract holes (positive voltage
attract electrons) towards the junction, thus depletion
layer is widen.
• A very small reverse leakage (Is)
current flow through the junction
due to minority carriers.
• Every 10°c rise in temperature
reverse saturation current gets doubled.
V-I characteristics of PN diode
Diode equation:

Where I is
diode current.

IS is the reverse bias


saturation current
VD is the voltage across
the diode.
VT is the thermal voltage
kT/q.
n is the ideality factor
generally 1 or 2.
Clamper circuit
• An electronic circuit that changes the DC level of a signal
to the desired level without changing the shape of the
applied signal.
• Dc component is simply added to the input signal or
subtracted from the input signal.
• Diode, capacitor and resistor is used.
• Positive and Negative clamper.
• Positive clamper circuit adds the positive dc component
to the input signal to push it to the positive side.
• Negative clamper circuit shifts the input signal towards
the negative dc level.
DC power supply
• Transformer − An input transformer for the stepping down of the 230v AC power
supply.
• Rectifier − A Rectifier circuit to convert the AC components present in the signal to
DC components.
• Smoothing − A filtering circuit to smoothen the variations present in the rectified
output.
• Regulator − A voltage regulator circuit in order to control the voltage to a desired
output level.
• Load − The load which uses the pure dc output from the regulated output.
Rectifier
• Converts ac current/voltage to dc current/voltage.
• Diode can be used for rectification.
• Two types half wave and full wave rectifier.
# Half wave rectifier
• Made with single diode which is connected in series with load.
• During the positive half of the AC input, diode becomes forward biased
and currents starts flowing through it.
• During the negative half cycle, diode becomes reverse biased and current
stops flowing through it. Efficiency is nearly 40%.
Zener diode
• special purposed heavily doped PN junction
diode works on reverse bias condition (as
voltage regulator).
• In forward bias acts as ordinary diode.
• When reverse voltage is greater than zener
breakdown voltage massive increase in flow of
current.
• The breakdown voltage across it is constant
for a large change of current through it so
works as voltage regulator.
Zener diode as voltage regulator
• Output voltage is constant after zener breakdown.

• When Vin is less than Vz diode acts as open circuit.(off stage)


• Vin is greater than zener voltage VZ , the zener operates in the breakdown
region and maintains constant voltage across the load.(large current flows
through zener).
• Zener diode is so doped that whenever Iz increases Rz decreases but Vz
remains constant. Vin = I* Rs + Vz.
• As the load current increases, the zener current decreases so that current
through resistance RS is constant. I = IL + Iz
• Vout= Vin – IRS, and I is constant, therefore, output voltage remains
unchanged.
• As voltage Vin increase, more current will flow through the zener, the
voltage drop across RS will increase but load voltage would remain
constant.
• V- I characteristics of Zener diode

• When input is low all current is transferred to load and when input is high
excess current is passed by zener, hence output across RL is constant.
• Here – 1 mA is Iz minimum.( current between minimum and maximum but Vz
is constant).

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