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LM74610-Q1
SNOSCZ1B – JULY 2015 – REVISED JUNE 2016

LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

1 Features 2 Applications
•
1 Qualified for Automotive Applications • ADAS
• AEC-Q100 Qualified With the Following Results: • Infotainment Systems
– Exceeds HBM ESD Classification Level 2 • Power Tools (Industrial)
– Device CDM ESD Classification Level C4B • Transmission Control Unit (TCU)
• Maximum reverse voltage of 45 V • Battery OR-ing Applications
• No Positive Voltage limitation to Anode Terminal
• Charge Pump Gate Driver for External N-Channel 3 Description
MOSFET The LM74610-Q1 is a controller device that can be
used with an N-Channel MOSFET in a reverse
• Lower Power Dissipation than Schottky polarity protection circuitry. It is designed to drive an
Diode/PFET Solutions external MOSFET to emulate an ideal diode rectifier
• Low Reverse Leakage Current when connected in series with a power source. A
• Zero IQ unique advantage of this scheme is that it is not
referenced to ground and thus has Zero Iq.
• Fast 2-µs Response to Reverse Polarity
• -40°C to +125°C Operating Ambient Temperature The LM74610-Q1 controller provides a gate drive for
an external N-Channel MOSFET and a fast response
• Can be Used in OR-ing Applications internal comparator to discharge the MOSFET Gate
• Meets CISPR25 EMI Specification in the event of reverse polarity. This fast pull-down
• Meets Automotive ISO7637 Transient feature limits the amount and duration of reverse
Requirements with a Suitable TVS Diode current flow if opposite polarity is sensed. The device
design also meets CISPR25 Class 5 EMI
• No Peak Current Limit specifications and automotive ISO7637 transient
requirements with a suitable TVS diode.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM74610-Q1 VSSOP (8) 3.00 mm x 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.

Smart Diode Configuration Application Diagram

Q1
Source Drain
Voltage
Vout
Regulator
VIN VOUT
S D TVS+ C

Vbatt
LM74610-Q1
TVS-

G
Vcap

Gate Drive Gate Pull Down

Anode LM74610-Q1 Cathode

VCAPH VCAPL

Vcap

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features .................................................................. 1 7.3 Feature Description .................................................. 8
2 Applications ........................................................... 1 7.4 Device Functional Modes........................................ 11
3 Description ............................................................. 1 8 Application and Implementation ........................ 13
4 Revision History..................................................... 2 8.1 Application Information............................................ 13
8.2 Typical Application ................................................. 13
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4 9 Power Supply Recommendations...................... 21
6.1 Absolute Maximum Ratings ...................................... 4 10 Layout................................................................... 22
6.2 ESD Ratings.............................................................. 4 10.1 Layout Guidelines ................................................. 22
6.3 Recommended Operating Conditions....................... 4 10.2 Layout Example .................................................... 23
6.4 Thermal Information .................................................. 4 11 Device and Documentation Support ................. 24
6.5 Electrical Characteristics........................................... 5 11.1 Community Resources.......................................... 24
6.6 Typical Characteristics .............................................. 6 11.2 Trademarks ........................................................... 24
7 Detailed Description .............................................. 8 11.3 Electrostatic Discharge Caution ............................ 24
7.1 Overview ................................................................... 8 11.4 Glossary ................................................................ 24
7.2 Functional Block Diagram ......................................... 8 12 Mechanical, Packaging, and Orderable
Information ........................................................... 24

4 Revision History
Changes from Revision A (October 2015) to Revision B Page

• Added No Peak Current Limit to Description ......................................................................................................................... 1

• Added Simplified Application Diagram to page 1 .................................................................................................................. 1
• Added Voltage Across Body Diode vs Vcap Charging Current to Typical Characteristics ................................................... 7
• Updated Gate Drive Pin ....................................................................................................................................................... 10
• Corrected Startup Relative to VIN figure ............................................................................................................................. 15
• Corrected typo of revere to reverse in Response to Reverse Polarity ................................................................................ 15
• Updated Layout Guidelines ................................................................................................................................................. 22

Changes from Original (July 2015) to Revision A Page

• Product Preview to Production Data Release ....................................................................................................................... 1

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5 Pin Configuration and Functions

DGK Package
8-Pin VSSOP
Top View

VCAPL 1 8 Cathode

Gate Pull Down 2 7 VCAPH

LM74610-Q1
NC 3 6 Gate Drive

Anode 4 5 NC

Pin Functions
PIN
DESCRIPTION
NO. NAME
1 VcapL Charge Pump Output, connect to an external charge pump capacitor
2 Gate Pull Down Connect to the gate of the external MOSFET for fast turn OFF in the case of reverse polarity
3 NC No connect. Leave floating or connect to Anode pin
4 Anode Anode of the diode, connect to source of the external MOSFET
5 NC No connect. Leave floating or connect to gate drive pin
6 Gate Drive Gate Drive output, Connect to the Gate of the external MOSFET
7 VcapH Charge Pump Output, connect to an external charge pump capacitor
8 Cathode Cathode of the diode, connect to Drain of the external MOSFET

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6 Specifications
6.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
(2) (3)
Cathode to Anode (for a 2-ms time duration) , -3 45 V
(3)
Cathode to Anode (continuous) -3 42 V
VcapH to VcapL -0.3 7 V
Anode to VcapL -0.3 3 V
Gate drive, gate pull down to VcapL -0.3 7 V
Ambient temperature, TA-MAX (4) -40 125 °C
Case temperature, TC-MAX -40 125 °C
Storage temperature, Tstg -65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) 42V continuous (and 45V transients for 2ms) absmax condition from Cathode to Anode. Suitable to use with TVS SMBJ28A and
SMBJ14A at the anode.
(3) Reverse voltage rating only. There is no positive voltage limitation for the LM74610-Q1 Anode terminal.
(4) The device performance is ensured over this Ambient Temperature range as long the Case Temperature does not exceed the MAX
value.

6.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per AEC Q100-002 (2) ±4000
V(ESD) Electrostatic discharge (1) V
Charged-device model (CDM), per AEC Q100-011 ±750

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Cathode To Anode 42 V
Ambient temperature, TA-MAX -40 125 °C
Case temperature, TC-MAX 125 °C

6.4 Thermal Information

LM74610-Q1
THERMAL METRIC (1) VSSOP (DGK) UNIT
8 PINS
RθJA Junction-to-ambient thermal resistance 181 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 73 °C/W
RθJB Junction-to-board thermal resistance 102 °C/W
ψJT Junction-to-top characterization parameter 11 °C/W
ψJB Junction-to-board characterization parameter 100 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

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6.5 Electrical Characteristics

TA= 25°C unless otherwise noted. Minimum and maximum limits are specified through test, design, validation or statistical
correlation. Typical values represent the most likely parametric norm at TA= 25°C and are provided for reference purpose
only. VAnode-Cathode= 0.55 V for all tests. (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Minimum startup voltage across 0.48 V
VAnode to Cathode External MOSFET VGS = 0V
external MOSFET's body diode
Charge pump capacitor drive Vcap Upper Threshold 6.3 V
Vcap Threshold
thresholds Vcap Lower Threshold 5.15 V
IGate up Gate drive pull up current VGate to Anode = 2 V 8.9 9.4 µA
Gate drive pull down current 6.35 6.8 µA
IGate down VGate to Anode = 4 V
during forward voltage
Gate drive pull down current 160 mA
IGate pull down VGate Pull Down = VAnode + 2 V
when reverse voltage is sensed
Charging current for the charge 40 46 µA
ICharge Current VAnode to Cathode = 0.55 V
pump capacitor
VCAP current consumption to 0.95 µA
IDischarge Current power the controller when Vcap = 6.6 V
MOSFET is ON
Time to shut off MOSFET when 2.2 5 (2) µs
VAnode to Cathode = -20 mV
TRecovery voltage is reversed (Equivalent to
Cgate = 4 nF
diode reverse recovery time)
Iload = 3 A, TA = 25°C 98%
D Duty cycle
Iload = 3 A, TA = 125°C 92%
ILKG Reverse leakage current VAnode to Cathode = -13.5 V 60 110 (2) µA
Iq Quiescent current to GND 0 µA
Current into Anode pin when VAnode - 30 µA
IAnode Current into Anode pin
Cathode = 0.3V.

(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits
and associated test conditions, see the table of Electrical Characteristics.
(2) Limit applies over the full Operating Temperature Range TA = -40°C to +125°C.

30 mV
VANODE ± VCATHODE

VANODE > VCATHODE

0 mV
VCATHODE > VANODE
-20 mV

tTRECOVERYt

VGATE
VGATE ± VANODE

0V

Figure 1. Gate Shut Down Timing in the Event of Reverse Polarity

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6.6 Typical Characteristics

300 0.465
V_Reverse = 13.5 V
V_Reverse = 37 V
0.46

Anode to Cathode Voltage (V)

250
Leakage Current (PA)

0.455
200
0.45
150
0.445

100
0.44

50 0.435
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (qC) D001
Temperature (qC) D002
Figure 2. Reverse Leakage at Negative Voltages Figure 3. Anode to Cathode Startup Voltage
3.25 6.5
VCAP H
VCAP L

Vcap High and Low Voltage (V)

6.25
3

6
Trecovery (µs)

2.75
5.75
2.5
5.5

2.25
5.25

2 5
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (°C) D009
Temperature (qC) D003
Figure 4. Reverse Recovery Time (TRecovery) Figure 5. VcapH and VcapL Voltage Threshold
100 100
90
80
80
70
60
Duty Cycle (%)

Duty Cycle (%)

60
50 40
40
20
30
-40qC -40qC
20 25qC 25qC
0
10 85qC 85qC
125qC 125qC
0 -20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 5 6 7 8 9 10
Current (A) D005
Current (A) D004
Figure 6. Duty Cycle of the Output Voltage at Startup Figure 7. Duty Cycle of the Output Voltage

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Typical Characteristics (continued)

175

150

125

ICharge Current
100

75

50

25
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05
VAnode to Cathode D010
Figure 8. Voltage Across Body Diode vs Vcap Charging Current

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7 Detailed Description

7.1 Overview
Most systems in automotive or industrial applications require fast response reverse polarity protection at the input
stage. Schottky diodes or P-Channel MOSFETs are typically used in most power systems to protect the load in
the case of negative polarity. The main disadvantage of using diodes is voltage drop during forward conduction,
which reduces the available voltage and increases the associated power losses. PFET solutions are inefficient
for handling high load current at low input voltage.
The LM74610-Q1 is a zero Iq controller that is combined with an external N-channel MOSFET to replace a diode
or PFET reverse polarity solution in power systems. The voltage across the MOSFET source and drain is
constantly monitored by the LM74610-Q1 ANODE and CATHODE pins. An internal charge pump is used to
provide the GATE drive for the external MOSFET. . This stored energy is used to drive the gate of MOSFET. The
voltage drop depends on the RDSON of a particular MOSFET in use, which is significantly smaller than a PFET.
The LM74610-Q1 has no ground reference which makes it identical to a diode.

7.2 Functional Block Diagram

Input Output
S D

ANODE GATE DRIVE GATE PULL DOWN CATHODE

11.5 V

VCAPL

LOGIC

Reverse Batt
VCAPH Charge Shut Off
Pump

7.3 Feature Description

7.3.1 During T0
When power is initially applied, the load current (ID) will flow through the body diode of the MOSFET and produce
a voltage drop (Vf) during T0 in Figure 9. This forward voltage drop (Vf) across the body diode of the MOSFET is
used to charge up the charge pump capacitor Vcap. During this time, the charge pump capacitor Vcap is
charged to a higher threshold of 6.3V (typical).

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Feature Description (continued)

VOUT
Body Diode Voltage Drop

T0 tT1t

FET is ON

VGS

FET is OFF

0V

Figure 9. Output Voltage and VGSOperation at 1A Output Current

7.3.2 During T1
Once the voltage on the capacitor reaches the higher voltage level of 6.3V (typical), the charge pump is disabled
and the MOSFET turns ON. The energy stored in the capacitor is used to provide the gate drive for the MOSFET
(T1 in Figure 9). When the MOSFET is ON, it provides a low resistive path for the drain current to flow and
minimizes the power dissipation associated with forward conduction. The power losses during the MOSFET ON
state depend primarily on the RDSON of the selected MOSFET and load current. At the time when the capacitor
voltage reaches its lower threshold VcapL 5.15V (typical), the MOSFET gate turns OFF. The drain current ID will
then begin to flow through the body diode of the MOSFET, causing the MOSFET body diode voltage drop to
appear across Anode and Cathode pins. The charge pump circuitry is re-activated and begins charging the
charge pump capacitor. The LM74610-Q1 operation keeps the MOSFET ON at approximately 98% duty cycle
(typical) regardless of the external charge pump capacitor value. This is the key factor to minimizing the power
losses. The forward voltage drop during this time is determined by the RDSON of the MOSFET.

7.3.3 Pin Operation

7.3.3.1 Anode and Cathode Pins

The LM74610-Q1 Anode and Cathode pins are connected to the source and drain of the external MOSFET. The
current into the Anode pin is 30 µA (typical). When power is initially applied, the load current flows through the
body diode of the external MOSFET, the voltage across Anode and Cathode pins is equal to the forward diode
drop (Vf). The minimum value of Vf required to enable the charge pump circuitry is 0.48V. Once the MOSFET is
turned ON, the Anode and Cathode pins constantly sense the voltage difference across the MOSFET to
determine the magnitude and polarity of the voltage across it. When the MOSFET is on, the voltage difference
across Anode and Cathode pins depends on the RDSON and load current. If voltage difference across source and
drain of the external MOSFET becomes negative, this is sensed as a fault condition by Anode and Cathode pins
and gate is turned off by Gate Pull Down pin as shown in Figure 1. The reverse voltage threshold across Anode
and Cathode to detect the fault condition is -20 mV. The consistent sensing of voltage polarity across the
MOSFET enables the LM74610-Q1 to provide a fast response to the power source failure and limit the amount
and duration of the reverse current flow.

7.3.3.2 VcapH and VcapL Pins

VcapH and VcapL are high and low voltage thresholds respectively that the LM74610-Q1 uses to detect when to
turn the charge pump circuitry ON and OFF. The capacitor charging and discharging time can be correlated to
the duty cycle of the MOSFET gate. Figure 10 shows the voltage behavior across the Vcap. During the time
period T0, the capacitor is storing energy from the charge pump. The MOSFET is turned off and current flow is
only through the body diode during this time period. The conduction though body diode of the MOSFET is for a

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Feature Description (continued)

very small period of time (2% typical) which rules out the chances of overheating the MOSFET, regardless of the
output current. Once the capacitor voltage reaches its high threshold, the MOSFET is turned ON and charge
pump circuity is deactivated until the Vcap reaches its lower voltage threshold again (T1). The voltage difference
between Vcap high and low threshold is typically 1.15V. The LM74610-Q1 charge pump has 46µA charging
capability with 5-8MHz frequency.

VCAPH

1.1 V

VCAPL

VOUT
Body Diode Voltage Drop

T0 tT1t
Figure 10. Vcap Charging and Discarding by the Charge Pump

The Vcap current consumption is 1 µA (typical) to drive the gate. The MOSFET OFF time (T0) and ON time (T1)
can be calculated using the following expression
dV
'T C
dI (1)
Where:
• C = Vcap Capacitance
• dV = 1.15V
• dI = 46 µA for charging
• dI = 0.95 µA for discharging
Note: Temperature dependence of these parameters – The duty cycle is dependent on temperature since the
capacitance variation over temperature has a direct correlation to the MOSFET OFF and ON periods and the
frequency. If the capacitor varies 20% the periods and the frequency will also vary by 20% so it is recommended
to use a quality X7R/COG cap and not to place the cap in close proximity to high temperature devices. The
variation of the capacitor does not have a thermal impact in the application as the duty cycle does not change.

7.3.3.3 Gate Drive Pin

When the charge pump capacitor is charged to the high voltage level of 6.3 V (typical), the Gate Drive pin
provides a 6.8 µA (typical) of drive current. When the charge pump capacitor reaches its lower voltage threshold
of 5.15 V (typical), Gate is pulled down to the Anode voltage (Vin). During normal operation, the gate turns ON
and OFF with a slow 2msec slew rate in order to avoid switching noise and EMI issues. To protect the gate of
the MOSFET, a built-in internal 11.5V Zener clamp the maximum gate to source voltage (VGS(MAX)).

7.3.3.4 Gate Pull Down Pin

The Gate Pull Down pin is connected to the Gate Drive pin in a typical application circuit. When the controller
detects negative polarity, possibly due to failure of the input supply or voltage ripple, the Pull-Down quickly
discharges the MOSFET gate through a discharge transistor. The Gate Pull Down pin can discharge the
MOSFET gate capacitance with 160-mA pull down current to speed up the MOSFET turn OFF time. This fast pull
down reacts regardless of the Vcap charge level. If the input supply abruptly fails, as would happen if the supply
gets shorted to ground, a reverse current will temporarily flow through the MOSFET. This reverse current can be
due to parallel connected supplies and load capacitance and is dependent upon the RDSON of the MOSFET.

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Feature Description (continued)

When the negative voltage across the Anode and Cathode pins reaches -20mV (typical), the LM74610-Q1
immediately reacts and discharges the MOSFET gate capacitance as shown in Figure 11 . A MOSFET with 5nF
of effective gate capacitance can be turned off by the LM74610-Q1 within 2µs (typical). The fast turnoff time
minimizes the reverse current flow from MOSFET drain by opening the circuit. The reverse leakage current does
not exceed 110µA for a constant 13.5V reverse voltage across Anode and Cathode pins. The reverse leakage
current for a Schottky diode is 15mA under the same voltage and temperature conditions.

Figure 11. Gate Pull Down in the Event of Reverse Polarity

7.4 Device Functional Modes

The LM74610-Q1 operates in two modes:
• Body Diode Conduction Mode
The LM74610-Q1 solution works like a conventional diode during this time with higher forward voltage drop.
The power dissipation during this time can be given as:
PDissipation VForward Drop u IDrain Current
(2)
However, the current only flows through the body diode while the MOSFET gate is being charged to VGS(TH).
This conduction is only for 2% duty cycle, therefore it does not cause any thermal issues.
C u (VcapH VcapL)
Body Diode ON Time
ICharge Current (3)
• The MOSFET Conduction Mode
The MOSFET is turned on during this time and current flow is only through the MOSFET. The forward voltage
drop and power losses are limited by the RDSON of the specific MOSFET used in the solution. The LM74610-
Q1 solution output is comprised of the MOSFET conduction mode for 98% of its duty cycle. This time period
is given by the following expression:
C u (VcapH VcapL)
MOSFET ON Time
IDischarge Current (4)

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Device Functional Modes (continued)

7.4.1 Duty Cycle Calculation
The LM74610-Q1 has an operating duty cycle of 98% at 25 ̊C and >90% at 125 ̊C. The duty cycle doesn’t
depend on the Vcap capacitance value. However, the variation in capacitance value over temperature has direct
correlation to the switching frequency between the MOSFET and body diode. If the capacitance value decreases,
the charging and discharging time will also decrease, causing more frequent switching between body diode and
the MOSFET condition. The following expression can be used to calculate the duty cycle of the LM74610-Q1:
(MOSFET ON Time)
Duty Cycle (%) u 100
(MOSFET ON Time Body Diode ON Time) (5)

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM74610-Q1 is used with N-Channel MOSFET controller in a typical reverse polarity protection application.
This device is connected to the N-Channel MOSFET as shown in Figure 12 . The schematic for the typical
application is shown in Figure 13 where the LM74610-Q1 is used in series with a battery to drive the MOSFET
Q1. The TVS+ and TVS- are not required for the LM74610-Q1. However, they are typically used to clamp the
positive and negative voltage surges respectively. The output capacitor Cout is recommended to protect the
immediate output voltage collapse as a result of line disturbance.

8.2 Typical Application

Anode Cathode
Voltage
Vout
Regulator

TVS+ Cout

Vbatt
LM74610-Q1
TVS-

Vcap

Figure 12. Typical System Application

Q1
ANODE CATHODE

2.2 µF
TVS+ Cout
VCAP 1 8
VCAPL CATHODE Vout
Voltage Regulator
VBatt 2
GATE PULL DOWN 7
Cin VCAPH
100 pf 3 6
NC GATE DRIVE
TVS- 4 5
ANODE NC

LM74610QDGKRQ1

GND

Figure 13. Typical Application Schematic

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Typical Application (continued)

8.2.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters

Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
Input voltage range Max VDS of the MOSFET
Output Voltage Max VDS of the MOSFET
Maximum Negative Voltage -45V
Output Current Range Maximum drain current
Output Capacitance 47µF
Transient Response, 3A Load Step ΔVo = ± 5%

8.2.2 Detailed Design Procedure

To begin the design process, determine the following:

8.2.2.1 Design Considerations

• Input voltage range
• Output current range
• Body Diode forward voltage drop for the selected MOSFET
• MOSFET Gate threshold voltage

8.2.2.2 Startup Voltage

The LM74610-Q1 will not initiate the charge pump operation if a closed loop system is in standby mode or the
drain current is smaller than 1mA (typical). This is due to a minimum body diode voltage requirement of the
LM74610-Q1 controller. If the drain current is too small to produce a minimum voltage drop of 0.48V at 25 ͦC, the
charge pump circuitry will remain off and the MOSFET will act just like a diode. It is very important to know the
body diode voltage parameter of a MOSFET before implementing it into the Smart Diode solution. Some N-
channels MOSFETs have very low body diode voltage at higher temperature. This makes their drain current
requirement higher to achieve 0.48V across the body diode in order to initiate the LM74610-Q1 controller at
higher temperatures.

8.2.2.3 Capacitor Selection

A ceramic capacitor should be placed between VcapL and VcapH. The capacitor acts as a holding tank to power
up the control circuitry when the MOSFET is on.
When the MOSFET is off, this capacitor is charged up to higher voltage threshold of ~6.3 V. Once this voltage is
reached, the Gate Drive of LM74610-Q1 will provide drive for the external MOSFET. When the MOSFET is ON,
the voltage across its body diode is collapsed because the forward conduction is through the MOSFET. During
this time, the capacitor acts as a supply for the Gate Drive to keep the MOSFET ON.
The capacitor voltage will gradually decay when the MOSFET is ON. Once the capacitor voltage reaches a lower
voltage threshold of 5.15V, the MOSFET is turned off and the capacitor gets recharged again for the next cycle.
A capacitor value of 220nF to 4.7uF with X7R/COG characteristic and 16V rating or higher is recommended for
this application. A higher value capacitor sets longer MOSFET ON time and OFF time; however, the duty cycle
remains at ~98% for MOSFET ON time irrespective of capacitor value.
If the Vcap value is 2.2µF, the MOSFET ON time and OFF time can be calculated using Equation 1 :
MOSFET ON Time = (2.2 µF × 1.15 V)/0.95 µA = 2.66 seconds (6)
Body Diode ON Time = (2.2 µF × 1.15 V)/46 µA = 55 miliseconds (7)
The duty cycle can be calculated using Equation 5 :
Duty Cycle % = 2.66 sec / (2.66 sec + 0.055 sec) = 98% (8)

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8.2.2.4 MOSFET Selection

The LM74610-Q1 can provide up to 5V of gate to source voltage (VGS). The important MOSFET electrical
parameters are the maximum continuous Drain current ID, the maximum drain-to-source voltage VDS(MAX), and
the drain-to-source On resistance RDSON. The maximum continuous drain current, ID, rating must exceed the
maximum continuous load current. The rating for the maximum current through the body diode, IS, is typically
rated the same as, or slightly higher than the drain current, but body diode current only flows for a small period
when the charge pump capacitor is being charged.
The voltage across the MOSFET's body diode must be higher than 0.48 V at low current. The body diode voltage
for a MOFET typically decreases as the ambient temperature increases. This will increase the source current
requirement to achieve the minimum body diode drain-to-source voltage for the charge pump to initiate. The
maximum drain-to-source voltage, VDS(MAX), must be high enough to withstand the highest differential voltage
seen in the application. This would include any anticipated fault conditions. The LM74610-Q1 does not have
positive voltage limitation, however, it is recommended to use MOSFETs with voltage rating up to 45 V for
automotive applications. Table 2 shows the examples of recommended MOSFETs to be used with the LM74610-
Q1.

8.2.3 Application Curves

VIN (5 V/DIV)

VOUT (5 V/DIV)

Gate Drive (5 V/DIV)

Time (50 ms/DIV)

Figure 15. Shutdown Relative to VIN

Figure 14. Startup Relative to VIN

VIN (10 V/DIV, 12 V to -20 V) VIN (10 V/DIV, 12 V to -20 V, 60 Hz)

VOUT (10 V/DIV, 12 V to 0 V)

VOUT (10 V/DIV, 12 V to 0 V)

Gate Drive (10 V/DIV)

Gate Drive (10 V/DIV)

Time (100 µs/DIV) Time (10 ms/DIV)

Figure 16. Response to Reverse Polarity Figure 17. Response to a 60Hz AC Input

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VIN (10 V/DIV, 12 V to -20 V)

TVS Clamping at -20 V

VOUT (5 V/DIV)

0V

Figure 18. ISO Pulse 1 Test Setup Time (1 ms/DIV)

Figure 19. Response to ISO 1 Pulse

8.2.4 Selection of TVS Diodes in Automotive Reverse Polarity Applications

TVS diodes can be used in automotive systems for protection against transients. There are 2 types of TVS
diode, one that offers bi-directional clamping and one that is uni-directional. In the application circuit show in
Figure 12, 2 unidirectional TVS diodes are used. TVS + does the clamping for positive pulses as seen in load
dump and TVS- does the clamping for negative pulses such as seen in the ISO specs.
There are two important specs to be aware of: breakdown voltage and clamping voltage. Breakdown voltage is
the voltage at which the TVS diode goes into avalanche similar to a zener diode and is specified at a low current
value typ 1mA. Clamping voltage is the voltage the TVS diode clamps to in high current pulse situations.
In the case of an ISO 7637-2 pulse 1, the voltages go to -150V with a generator impedance of 10Ω. This
translates to 15A flowing through the TVS - and the voltage across the TVS would be close to its clamping
voltage. A rule of thumb with TVS diode voltage selection is that the breakdown voltage should be higher than
worst case steady state voltages seen in the system. TVS diodes are meant to clamp pulses and not meant for
steady state voltages.
The value of the TVS + is selected such that the breakdown voltage of the TVS is higher than 24V which is a
commonly used battery for jump start. LM74610-Q1 does not have a positive voltage limit so the selection of the
voltage rating of TVS + is determined by the max voltage tolerated by the downstream electronics. If the
downstream parts can withstand at least 37V (suppressed load dump) then there is no need to use the TVS+. In
this case it can be replaced with a diode as seen in Figure 20. A 1A diode with a 30A surge current rating and at
least 40V reverse voltage rating is recommended. In case positive clamping voltage is desired then
SMBJ24A/SMBJ26A is recommended for TVS + as seen in Figure 12.

Anode Cathode
Voltage
Vout
Regulator

TVS- Cout

Vbatt
LM74610-Q1
Diode

Vcap

Figure 20. Typical Application without Positive Voltage Clamping

The value of the TVS – is selected such that 2 criteria are met. The breakdown voltage of the TVS should be
higher than the max reverse battery voltage which is typically 15V. The second criterion is that the abs max
rating for reverse voltage of the LM74610 is not exceeded (-45V).

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In case of reverse voltage pulses such as in ISO specs, the LM74610 turns the MOSFET off. When the MOSFET
turns off the voltage seen by the LM74610, Anode to Cathode is - (clamping voltage of TVS- (plus) the output
capacitor voltage). If the max voltage on output capacitors is 16V, then the clamping voltage of the TVS- should
not exceed, 45V – 16V = 29V.
SMBJ14A/SMBJ15A/SMBJ16A TVS diodes can be used for TVS-. The breakdown voltage of SMBJ14A is 15.6V
and SMBJ16A is 17.8V. This meets criteria one. The clamping voltage of SMBJ14A is 23.2V and SMBJ16A is
26V. This meets the second criteria.
Bi-directional TVS diodes are not recommended due to their symmetrical clamping specs. SMBJ24CA has a
breakdown voltage of 26.7V and a clamping voltage of 38.9V. The breakdown voltage meets the criteria for being
higher than 24V. However the clamping voltage is 38.9V. The high clamping voltage is not an issue for the
positive pulses however for a negative ISO pulse, the abs max of the LM74610 can be violated. Voltage across
Anode to Cathode in this case is –(38.9V + 16V) = -54.9V which violates abs max rating of -45V.
As far as power levels for TVS diodes the ‘B’ in the SMBJ stands for 600W peak power levels. This is sufficient
for ISO 7637-2 pulses and suppressed load dump case (ISO-16750-2 pulse B). For unsuppressed load dumps
(ISO-16750-2 pulse A) higher power TVS diodes such as SMCJ or SMDJ may be required.

8.2.5 OR-ing Application Configuration

Basic redundant power architecture comprises of two or more voltage or power supply sources driving a single
load. In its simplest form, the OR-ing solution for redundant power supplies consists of Schottky OR-ing diodes
that protect the system against an input power supply fault condition. A diode OR-ing device provides effective
and low cost solution with few components. However, the diodes forward voltage drops affects the efficiency of
the system permanently, since each diode in an OR-ing application spends most of its time in forward conduction
mode. These power losses increase the requirements for thermal management and allocated board space.
The LM74610-Q1 ICs combined with external N-Channel MOSFETs can be used to in OR-ing Solution as shown
in Figure 21 . The source to drain voltage VDS for each MOSFET is monitored by the Anode and Cathode pins of
the LM74610-Q1. The forward conduction is through MOSFETs 98% of the time which avoids the diode forward
voltage drop. The body diode of each MOSFET only conducts the remaining 2% of the time to allow the charge
pump capacitor to be fully charged.
This is essential for an OR-ing device to quickly detect the reverse current and instantly pull-down the MOSFET
gate to block the reverse current flow. An effective OR-ing solution needs to be extremely fast to limit the reverse
current amount and duration. The LM74610-Q1 devices in OR-ing configuration constantly sense the voltage
difference between Anode and Cathode pins, which are the voltage levels at the power sources (PS1, PS2) and
the common load point respectively. When either of the power sources operates at lower voltage, the LM74610-
Q1 detects a negative polarity and shuts down the Gate Drive through a fast Pull-Down within 2μsec (typical).

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PS1
Anode Gate Drive Pull Down

±
LM74610-Q1 Cathode

CLOAD RLOAD
VCAPH VCAPL

Vcap

PS2
Anode Gate Drive Pull Down

±
LM74610-Q1 Cathode

VCAPH VCAPL

Vcap

Figure 21. Typical OR-ing Application

If one of the power supplies fails in LM74610-Q1 OR-ing controller application, the output remains uninterrupted.
This behavior is similar to diode OR-ing. Figure 22

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VOUT (5 V/DIV, 12 V)

VIN 1 (5 V/DIV, 12 V)

VIN 2 (5 V/DIV, 12 V to 0 V)

Time (1 s/DIV)

Figure 22. LM74610-Q1 OR-ing waveform

8.2.6 Design Requirements

NOTE
Startup voltage is the voltage drop is needed for the controller to turn ON. It directly
influences the Minimum output current at which the MOSFET turns ON.

Table 2. Recommended MOSFET Examples (1)

Voltage Drain Vgs
Rdson mΩ @ Diode voltage @ 2A at
Part No (V) Current at Threshold( Package; Footprint Qual
4.5V 125C/175C
Current 25C V)
CSD17313Q2
30 5 26 1.8 0.65 SON; 2 x 2 Auto
Q1
SQJ886EP 40 60 5.5 2.5 0.5 PowerPAK SO-8L; 5 x 6 Auto
SQ4184EY 40 29 5.6 2.5 0.5 SO-8; 5 x 6 Auto
Si4122DY 40 23.5 6 2.5 0.5 SO-8; 5 x 6 Auto
RS1G120MN 40 12 20.7 2.5 0.6 HSOP8; 5 x 6 Auto
RS1G300GN 40 30 2.5 2.5 0.5 HSOP8; 5 x 6 Auto
CSD18501Q5
40 22 3.3 2.3 0.53 SON; 5 x 6 Industrial
A
SQD40N06-
60 40 17 2.5 0.5 TO-252; 6 x 10 Auto
14L
SQ4850EY 60 12 31 2.5 0.55 SO-8; 5 x 6 Auto
CSD18532Q5
60 23 3.3 2.2 0.53 SON;5 x 6 Industrial
B
IPG20N04S4
40 20 7.2 2.2 0.48 PG-TDSON-8-10; 5 x 6 Auto
L-07A
IPB057N06N 60 45 5.7 3.3 0.55 PG-TO263-3; 10 x 15 Auto
IPD50N04S4
40 50 7.3 2.2 0.50 PG-TO252-3-313; 6 x10 Auto
L

(1) The LM74610-Q1 solution is not limited to the MOSFETs included in this table. It only shows examples of compatible MOSFETs.
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Table 2. Recommended MOSFET Examples(1) (continued)

Voltage Drain Vgs
Rdson mΩ @ Diode voltage @ 2A at
Part No (V) Current at Threshold( Package; Footprint Qual
4.5V 125C/175C
Current 25C V)
BUK9Y3R5- LFPAK56; Power-SO8
40 100 3.8 2.1 0.48 Auto
40E (SOT669); 5 x 6
IRF7478PbF-
60 7 30 3 0.55 SO-8; 5 x 6 Industrial
1
SQJ422EP 40 75 4.3 2.5 0.50 PowerPAK SO-8L; 5 x 6 Auto
IRL1004 40 130 6.5 1 0.60 TO-220AB Auto
AUIRL7736 40 112 2.2 3 0.65 DirectFET®; 5 x 6 Auto

Table 3. Recommended TVS Combination to meet ISO7637 Specifications (Note 4)

TVS + TVS-
SMA6T33AY SMBJ14A/ SMA6T15AY
SMA6T30AY SMBJ14A/ SMA6T15AY
SMA6T28AY SMBJ14A/ SMA6T15AY

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9 Power Supply Recommendations

While testing the LM74610-Q1 solution, it is important to use low impedance power supply which allows current
sinking. If the power supply does not allow current sinking, it would prevent the current flow in the reverse
direction in the event of reverse polarity. The MOSFET gate won't get pulled down immediately due to the
absence of reverse current flow.

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10 Layout

10.1 Layout Guidelines

• The VIN terminal is recommended to have a low-ESR ceramic bypass-capacitor. The typical recommended
bypass capacitance is a 10-μF ceramic capacitor with a X5R or X7R dielectric.
• The VIN terminal must be tied to the source of the MOSFET using a thick trace or polygon.
• The Anode pin of the LM74610-Q1 is connected to the Source of the MOSFET for sensing.
• The Cathode pin of the LM74610-Q1 is connected to the drain of the MOSFET for sensing.
• The high current path of for this solution is through the MOSFET, therefor it is important to use thick traces for
source and drain of the MOSFET.
• The charge pump capacitor Vcap must be kept away from the MOSFET to lower the thermal effects on the
capacitance value.
• The Gate Drive and Gate pull down pins of the LM74610-Q1 must be connected to the MOSFET gate without
using vias. Avoid excessively thin traces to the Gate Drive.
• Obtaining acceptable performance with alternate layout schemes is possible, however this layout has been
shown to produce good results and is intended as a guideline.
• Keep the Drive pin close to the MOSFET to avoid further reduce MOSFET turn-on delay.

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10.2 Layout Example

1. VcapL 8. Cathode
2. PullDown 7. VcapH
3. NC 6. Gate Drive
4. Anode 5. NC

Figure 23. Layout Example

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11 Device and Documentation Support

11.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

LM74610QDGKRQ1 ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 ZDSK

LM74610QDGKTQ1 ACTIVE VSSOP DGK 8 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 ZDSK

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 17-Jul-2020

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM74610QDGKRQ1 VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
LM74610QDGKTQ1 VSSOP DGK 8 250 178.0 13.4 5.3 3.4 1.4 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 17-Jul-2020

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM74610QDGKRQ1 VSSOP DGK 8 2500 366.0 364.0 50.0
LM74610QDGKTQ1 VSSOP DGK 8 250 213.0 191.0 50.0

Pack Materials-Page 2
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