74HCT157
74HCT157
74HCT157
. . . . . . .
HIGH SPEED tPD = 21 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 A (MAX.) AT TA = 25 C COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL PIN AND FUNCTION COMPATIBLE WITH 54/74LS157/158
HCT157 DESCRIPTION The M54/74HCT157 and the M54/74HCT158 are high speed CMOS QUAD 2-CHANNEL MULTIPLEXERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. These devices consist of four 2-input digital multiplexers with common select and strobe inputs. The HCT158 is an inverting multiplexer while the HCT157 is a non-inverting multiplexer. When the STROBE input is held High, selection of data is inhibited and all the outputs become Low in the M74HCT157 and High in the M74HCT158. The SELECT decoding determines whether the A or B inputs get routed to their corresponding Y outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage. M54/74HCT devices are designed to directly inter2 face HSC MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption.
April 1993
HCT158
NC = No Internal Connection
1/11
M54/M74HCT157 M54/M74HCT158
CHIP CARRIER HCT157 HCT158
2/11
M54/M74HCT157 M54/M74HCT158
TRUTH TABLE
INPUTS STROBE H L L L L
X: DONT CARE
SELECT X L L H H
3/11
M54/M74HCT157 M54/M74HCT158
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW
o o
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
C C
ns
4/11
M54/M74HCT157 M54/M74HCT158
DC SPECIFICATIONS
Test Conditions Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 VI = IO=-20 A VIH or IO=-4.0 mA V IL VI = IO= 20 A VIH or IO= 4.0 mA V IL VI = VCC or GND VI = VCC or GND Per Input pin VI = 0.5V or V I = 2.4V Other Inputs at V CC or GND IO= 0 4.4 4.18 4.5 4.31 0.0 0.17 0.1 0.26 0.1 4 2.0 TA = 25 C 54HC and 74HC Min. Typ. Max. 2.0
o
Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 2.0 2.0 Unit
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
V IL
0.8
0.8
0.8
V OH
VOL
4.5
II ICC ICC
Input Leakage Current Quiescent Supply Current Additional worst case supply current
5/11
M54/M74HCT157 M54/M74HCT158
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions Symbol Parameter VCC (V) 4.5 4.5 TA = 25 C 54HC and 74HC Min. Typ. Max. 8 16 15 25
o
Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 19 31 22 38 Unit
tTLH tTHL tPLH tPHL tPLH tPHL tPLH tPHL CIN CPD (*)
Output Transition Time Propagation Delay Time (A, B - Y) Propagation Delay Time (SELECT - Y) Propagation Delay Time (STROBE - Y) Input Capacitance Power Dissipation Capacitance
ns ns
4.5
19
30
38
45
ns
4.5
17
27
34
41
ns
5 HCT157 HCT158 50 60
10
10
10
pF pF pF
(*) CPD is defined as the value of the ICs internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC/4 (per channel)
6/11
M54/M74HCT157 M54/M74HCT158
DIM.
P001C
7/11
M54/M74HCT157 M54/M74HCT158
DIM.
P053D
8/11
M54/M74HCT157 M54/M74HCT158
P013H
9/11
M54/M74HCT157 M54/M74HCT158
DIM.
P027A
10/11
M54/M74HCT157 M54/M74HCT158
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.