vn800ps e
vn800ps e
vn800ps e
High-side driver
Features
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 15
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 15
3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 16
3.2 Microcontroller I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 SO-8 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
List of tables
List of figures
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2 Electrical specifications
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Table 5. Power
Symbol Parameter Test conditions Min. Typ. Max. Unit
Operating supply
VCC 5.5 36 V
voltage
VUSD Undervoltage shutdown 3 4 5.5 V
VOV Overvoltage shutdown 36 42 V
IOUT = 0.5 A; Tj = 25 °C 135 mΩ
RON On-state resistance
IOUT = 0.5 A 270 mΩ
Off-state; VCC = 24 V; Tcase = 25 °C 10 20 µA
IS Supply current On-state; VCC = 24 V 1.5 3.5 mA
On-state; VCC = 24 V; Tcase = 100 °C 2.6 mA
VCC = VSTAT = VIN = VGND = 24 V;
ILGND Output current at turn-off 1 mA
VOUT = 0 V
IL(off1) Off-state output current VIN = VOUT = 0 V 0 50 µA
VIN = VOUT = 0 V; VCC = 13 V;
IL(off2) Off-state output current 5 µA
Tj = 125 °C
VIN = VOUT = 0 V; VCC = 13 V;
IL(off3) Off-state output current 3 µA
Tj = 25 °C
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L L H
Normal operation
H H H
L L H
Current limitation H X (Tj < TTSD) H
H X (Tj > TTSD) L
L L H
Over temperature
H L L
L L X
Undervoltage
H L X
L L H
Overvoltage
H L H
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W
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Figure 8. Waveforms
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3 Application information
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If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then the ST suggests to utilize Solution 2 (see Section 3.1.2).
Figure 10. Off-state output current Figure 11. High level input current
IL(off1) (µA) Iih (µA)
2.5 8
2.25
7
Off state
2 Vcc=36V Vin=3.25V
6
Vin=Vout=0V
1.75
5
1.5
1.25 4
1 3
0.75
2
0.5
1
0.25
0
0
-50 -25 0 25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Tc (ºC)
Figure 12. Status leakage current Figure 13. On-state resistance vs Tcase
Ilstat (µA) Ron (mOhm)
0.1 400
0.09
350
Vstat=Vcc=36V Iout=0.5A
0.08
Vcc=8V; 13V; 36V
300
0.07
0.06 250
0.05 200
0.04
150
0.03
100
0.02
0.01 50
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
Figure 14. On-state resistance vs VCC Figure 15. Input high level
350 3.4
Iout=0.5A
300 3.2
250 3
Tc= 150ºC
200 2.8
150 2.6
Tc= 25ºC
100 2.4
0 2
5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 175
Figure 16. Input low level Figure 17. Turn-on voltage slope
2.4 1400
Vcc=24V
Rl=48Ohm
2.2 1200
2 1000
1.8 800
1.6 600
1.4 400
1.2 200
1 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (ºC)
48 1.4
46 1.3
44 1.2
42 1.1
40 1
38 0.9
36 0.8
34 0.7
32 0.6
30 0.5
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (°C) Tc (°C)
2.25
700
Vcc=24V Vcc=24V
2
Rl=48Ohm Rl=10mOhm
600
1.75
500
1.5
400 1.25
1
300
0.75
200
0.5
100
0.25
0 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Tc (ºC) Tc (ºC)
A
B
1
C
0.1
1 10 100 1000
L(mH )
Note: Legend
A = Single pulse at TJstart = 150 ºC
B = Repetitive pulse at TJstart = 100 ºC
C = Repetitive Pulse at TJstart = 125 ºC
Conditions:
VCC = 13.5 V
Values are generated with RL = 0 Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
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1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,
Cu thickness = 35 µm, Copper areas: 0.14 cm2, 2 cm2).
Figure 25. SO-8 Rthj-amb vs PCB copper area in open box free air condition
0.5 cm2
100
2 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Tj C1 C2 C3 C4 C5 C6
R1 R2 R3 R4 R5 R6
Pd
T_amb
where
δ = tp ⁄ T
R1 (°C/W) 0.24
R2 (°C/W) 1.2
R3 (°C/W) 4.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 0.00015
C2 (W.s/°C) 0.0005
C3 (W.s/°C) 7.50E-03
C4 (W.s/°C) 0.045
C5 (W.s/°C) 0.35
C6 (W.s/°C) 1.05 2
5.1 ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
A 1.75
a1 0.1 0.25
a2 1.65
a3 0.65 0.85
b 0.35 0.48
b1 0.19 0.25
C 0.25 0.5
c1 45
D 4.8 5
E 5.8 6.2
e 1.27
e3 3.81
F 3.8 4
L 0.4 1.27
M 0.6
S 8
L1 0.8 1.2
0016023 D
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Start
6 Revision history
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