VL5L

Module
* MOOres La
The omber a tranSlstors on a
qeds (1 mohs to 24 months) and al6o
<edweíng he areo sedweg the
loy hak and sedua
Poos by Square oot +ine's ard iereasing
es perscamonte to the Povwer s.

*vLSI deqntng -[oesign ooI tarchitectural desin

srst
SGt step in ne wL6I desfning is speccaton
2 FuntÉ onal specigeation. [Functonal dèsfqn Logte
3] cirauit design.
dealan]
poyicol design- portittontng eoor ponnig outhg
slphyoical desigo ueroateon.

spe'gcoto
2] archtectural desan Lcosts pover
3RTL code.
Functtanal wencatton.[smulatton]
eTO codence or simulatlon Funonat wentcoton is done
oy c sinulotor"
RTL code l convested into qate Le vel netTst

o IO codence syhe6s. tooL îs 'genue": Loq te veitteoton.

physical deatan sogt
In ad ene the -tool uSed Er phystcal desip is
lonovces
circRts a e con verted to transstors
o A
dotabase Stream.
9DS-gaphe do
Ee is setto Kabr'eton.
* VLSI deGn kow/RTHtO 45 Eo
Speciicotfon

Achitetural deoq
RTL Codíg
and Kuncronat verication
Logie Gythesis
Loqie vercation
and tes tÉng
physcal desgo
phy sieal vengeatfon
and signts
Fobicoton

Pochogrg and
testng
Syhesis

Trans late Map optimiga. os remouing

he umoer
[reducnq me
Code t0 qate
LeVel netlist| gae stge ] Lrederote
tans stors t0
he
edce
poer consumpton
physioal desn

parntanig routng
placement
+ BoOr plannig - riqnt wrtlhation ok the
place.
Obje ctfves
mintnle the chip area
mihimige delay

qtobal setalled.
t qives he
OVtruew o the it qives the corfet
añd detailed yrevo t
Connecton the conNLton,

* vohy vSI? [Advartoqes]

tovoer
physbaly smaller sige s LeGs
high speed
easier to aesign
qive he contol
Lo cDSt.
nigh perorance.

"A juncto beteen p-ype and mtype senfconductor

one dise tioo.

anode cathode

pdran dsois
énchoncemet

gafa pelep

Bource Source
nch0Snel -Channel
MosFET MOSAET

*NMOS tsanslstor
° N- anne MOS tSans'sTs
N-type sburce d dron,p-type subetrate.[aody]
 o draio and sowrce are heawiy doped.
" subtrate ls iqhtty copeo.

N sib, layer [insulaton

tayerad
betoeeo gate od
substrate]
* ThreShold vo toqe to
att ohd a MOS trons stoY starts
gate usttoqe
corcdCt.
detned as +he qate uo
he qate toge t
uo ttoge ohith strong
inverson ocCUrs.

* Reqions ok opeatior
ostet is

P-type body

oud.
(Ri) omOS Lhear
S

channel orrns
P-typ bdy

* There is romaton ok chonnel but

 make he arrent Bo Uoe nowe to mahe tHhe Nas
make electons to to kYom source to
niah to
dsrain.

Mqpnt(t)

4+

Pt4pe bods

Cursent Ko al to
sCmias to ieos resistor.
Ids orea0s uwitb Vds

3 nMOS sotus otton

Vqs >Vt |Tds
Vt
channe phehes
P-tpe body
curret eaurates
trnias t0 Current
SoUrce.
The channe pBhches Os5

Note
psue usthoge
Soure
regon.
saiuraton
* conStant CUsret
Modes

he qate regton. shee de ar

-ve uotag
oelou
d oxra e Layer Ard tve hos orms he aCCunaton
reg ton. heqtwe potcttal]
 slo
p

P-ype substrate

(t) aepieon mode (0zvs Vt)

" oe uoiu appy positte uottog e ohth is Less than threshoid

" Shee. +ve tonG ase. epeled to

torordo the
voordlo the ype octy
and here lb creaton ok an empty eg'on. empy
s hroron as aepletos reqo
pt

deleoo
'reg'on
P-4pe Suktrate
 reqton

P-4Pe substrate

* Tdeal I-V cnaracteristtcs MOs [em]

sswme-- channel Lenqt s ong
atera eledne eds reloat'vey oo.
long -channel, deal, t -order
Shochley model
- chamel del abs hat the C r s e t thaugh
Long

tox

Ptype body

( lnsulator, eOX 3-480)

Fa" TRarststof nensions
er aS
Let Hhe nanne Ce lbe , hlchoebs ot oxde Layer
engh
tox j vo lah ot h Lenqth be wan s a qate
Source wotqe,
Toe dran to source cument
Cq = gote capac'tonce.
 chaonel|

Vds
ptype b0dy

Fq AvPesoqe gote to channel

>0) ohere gea charqe pre

Tds = - Ios dS current Kouoia tYom dsan

Soure.

Ti electron transit tme.

Melooty (M)
velocy (u): MEd6
ohere

td6> electrc geud

And al50 voKt,

acrss
drais d
Eds a electrle kÉed deve oped
woKot beteen dra nd Gource
i I n rear regjon
V >ve

oIn clrear <eqton, chorqe tnduced tn the cnannel s due o

iqs and otage diggree blw qate and chann el.
the channe vores Lheary uoth he dstomce
thenthe eete qate us (qe vq gs
Ohere
lE = threshold teUoLcae needed to invert
charqe under theate.
area
Cronge per untt (gc)
For stcon,&e ?4

aeroqe
qate 'to
eleee eid
channel. Aavelope d acrosS

channel

Letne Seld deJelop ed across ate to hannel, Dk the

L -Lenqt
(Vgs - t )- VdS crael

qate oide thReknebs.

silbs'tute )
(vop - Me)- (vd)

and )

gd.
 (vgs -Ve)- (vds)

(vgs- ve) - (vd6)

LA

(is-ve) -(:
.&o &i wHds
L

vgs-ve)vas 2

Let

Ko
(Uqs -e)vds - vde
2

Let

ds: p(vgs -Vejds - Vds?

]6auraton reqion

(vgs- ve)- (vgs - vt)

vgs-vt)
2

awt regtons
near reqton P (Ugs -vejvgs

soroion (vgs -vt|

2

* Non-deal Iv etgts lsecord order ektto

’Shot channoLe i
onie deing deal Iu charocterets |Tds oe aeume, the
an oFF
also the curent t h g n
hannel and
translsr 2er0. ong
" In order tmpoue he Perormano
to per and to cedce he cost ok
prodctfon oe oeed to Scald doon the sige ok transietor ioturo
e need t0 rdwce he channel Length. as a reGut
The threshod wotge iseses oth the chanel ergth
exterds into a stgn'gcant
S0urce and dras dettor req'ons as short -hannel
porton ok he channel and herce s cole
 p

ihannel len modulatiao hdvced tnverson

Layer
Oxidc laqer

ChannI leng
p-type suastrate

neep o acreastng los, the KOr the inverson chage

Heeps on ncreasr cegjon
Zeo,
or a cors tont a e ok lGs mahtouned,
.Ths channel ength Kees decreasthg
on

phenoenon s caled as dhannel -length mmaddatlon.

(vqs-ve
(l+ Ads)
*beptetion regon shortens the channel ergt

iMobiuty aeqradaton (surce scattedg

°etroyels kom so Urce to dran , hey dont olbo the Strajnt
path, they trawel în sattered ay
The lateral elechc Keld S more than the vertcal electne
sed.
nab clecre geld, strengths the carfers scotter in the s02
 GUr7oce estetue pattht
SoUrce

Ioversn -bepleon
iawcs a d the Reg'onIás also deceaSes,
obitY decreages, As a resw
iv]velciy saturation

Linear tvelocahyeeeldjel
" At nlah ateral seid strerqth, thc trner Jetoctyceases to
inerease ínearyoth estrengt. Tns Cs caued Jelocity
saturotion.,
TnO eloity saturation sOSwtS o oer tia:

to bvert he
oody ereOGeS the thoeshold vooge
channel hene t
+ Vsb -Js)
s at he body
vOhon the souree
potetial. threshold.
at
g52 surce potentu
O 4
: body eKsrent coeKteent
J2&si NA
Gox Cox

are 2 types o5Leah oge. They e -

() Subthres hold codwctio
(i9 Gate Leokoge
(ii)uncto leakqe.
 gade
Source
Arain

veO uhen tanstoS are orA,Hhey lak smal am0unt k urrn

Learaqe Cncide
i) Subthreshold condutton b SOUrCe E drais
qate (eatage ocdy
rom he qate to
to
junction Leakoqe bom `ouee to loody and dras
"Stthreshod
kaody corducn is cawsed by thremal emtso
carners over he potertal baes set by the threshold.
i quonthIm mechan'al kect caSed by
tunnelhg throug the extemely thin gate a'eiedn.
funt'os (eatoqe B csed by current hugh po Ruoctoo
blw source to dra ndty6s'ons ond bod
Dc tanser characteristcs
) uotoqe-+ransr choracterte
Cm0S Iover ter
bc transtr Craracenstes ole KnaON
1 5 wotge +ransr choractrletcs.
pMOS
dsp cure
SOurce
ooing tom drah to
1
-ouout. draino
Souree in NMOS.

Td5N NMOS oper ahonN MOs s onnected t0

A6 he dtain

60ure Ok NM0S s conneted to

Fgnd qand as a es wt Vqs= ues-o
2 V
PmOs operatton
In pmos, Source s conected to Vdd so gate to Source
ven - dd, udsp
+I-M haracterstics Ok Nm D6
Satrojio
LineaY
vqsNs

(0 2 Suhstte
gaie buh
body

inear Satunation
NMOS Vgsn >Vtn

Vout Veo-VtN

Ngsp> ep gsp <Vep

+Vdd uhzp +Vdd
 Mout

A - NMO-t-ok
Pmos- 4anear

PMOS- nl¡r
C- NM0s- satuYaon At reqion c.
Pmos- Saturatt o
NMOS- near
Saturation
Lneor
pM0s- c t - *

*p- cotio etgt

’ormal 5Keuscd coditos
UnKseuoed conditon.

HI SKeuoed cordito

BA NMAS.

can a degned
1.

marigo
wottoge seconq'aed by the receivig qate E tn e maximm
LOw op uotage proauLed by the añth qate
 betueen the min
It B deed as the ditrence and the mnbimm

NMyz NoH VIH

at Log?e WoH

Vib
Loga at NMI
VoL

lOM dlout

Tnput o Toputi
iv] Pass transistors Thput
outpur

input

Cegradt

pMOS g-0 Deqraded

Stvng 1

VTnstate laver er

transmissioo
qote (6)
 the output ok he înverter
oil oe n he t s tate
conditon.

(6) oen E=
A
HE taverter
re outp t ok the complement
k A.
t A
(c)
Here, nc tsistote conion uoill x edon t care alwe or
sloatiy cordilon.

Bicanos oqie tmtuy

and c MOG
oge.
hmpedamce.
ocups celatiely sna area.
Note;

area
5aster
pouoer

anslator

T
chogig tC

T4 - No

VGS
 vonen uiz0, TaT ore o ON condtio, theo he capactor CL
horqed
Then he oukput is hON cord4on,

T2 -ON
T4-ON

-chorges
1
ere, the Sret
groundl.

because the s n provids

Io, cOGe 1,
capactor
he
suteet auirent to thre capactor,
the chovg dinet!
Inhe akave connectBon, here o connectÃon sronm vddto
qround50 h ro cope state poeS dpotfon toaKes plce
GotO proide awod hat, there is'an 'aterate iaqtom)
conneon:

T4

T
vin
 Tt - ere, the
reslstors
Ti are added
becowSe to
vout tmprove the
Ta
Ti eey
the
lnveter.

eAesstors wide dis base curret io case

BT Charge path gor tne

Uoilt be more
+here more pouOer cons
dug
proväe
me he moan.teen
assimni
Ok the TC, hem
heSO reG letor

Duerome hese des

omother BcMOG ete.odwantqes,

Tut

Ts

Baee curent dschage

*prolem
J Typicol vauwes kor an ndeuice tor aurent s 1 Mm prcess
are a5 oUous

AO=500 cmv
tox a 200 A
and nence the
PMos.
UoKot

tox
Sote:
" tHee, a he Unit are
m.

Bn 00 x 2453x L0-1
200 x (0-B

21 consider onMOS transStor Th 1b0 nm pr eOS o h a nomminal

threshold uooqe ok o4V and
oTth a Sistrate contat,oo
is tred to body
ody Ot Oom temmperatre
muc doe5
K the Source
he threshold
at e09ted o? eharge
tempeoture the threma

2o mV, std vawe,

n"45xOT Cm3 ,std valwe..

threshold
Ys2suace poten h'al ot

45xo10
 +Vsb -
a tox
J2 E? NA
[o.4-0 Std
" vawe
tox a 40 xLOd qiven 1 given
u +hermal uottoge
B54 x10 9
ox: 2453 xLo

2x(oG KI)txe-854 xI)Bxiot*)

3452 x 0 3

rJ$vsb -

lto nommial hers hold

VE = Q"4 + 0"Joq3+\ei - Joq) wotoqe =04