ASSTGNMENT-4

detoil
oolain channel Iength modl otion to
scen from the fra hat thu gauration
lhe
MOSEE T channel k pipched otf at the
end and further ocreaue In the Vos
drain
bave
ho effect oh the chapnel spact
Specifically, as Vas Is-increautd the chanoe
pihch off point ts moved sliabty auay fro
the dan to boa rd the source le
Íe the effective
hannel lenqth Je reduced
Vbs >Vas-VI

Dt

This phenomanon isknown aA chanod leng th

modulotibn since I e inversypxnpor oDal to
hechahntl leDg th moduulation epda h trcreles
with VDs
The saturated cument can be appatxim akd by
Laingthe maxlmAmvaue of then¡h-stuxatcd
ctrent Losth efective chanhl leng th

lherc ie Call ed channl length modulot ton

Seen that
Ptting Vos eaual to zeD, It
Cument doesnot Palle to zeo.
of 2, oe pt Id=0 o above
To qet vaue
 ith Ahe
epcration ohelpok
equabon.
cravt diagram.,eaplán the
Ch10s.tnvcrtcrs

VA

-Another weful characirishic ansca from

Laminnq saturation cument n more deto)
Taking. SaLtartDat of both oldes qivcn
BnVes-VJ142Vo -(5)
Tnsteady etat only on oh th
trarsakor
dirccion Lconnuchion heuotur
and qDuDd for
Foz Io oput cleadyttate
poutrtupply
npd
Bo -Co) ON while NMOstc 'OE volHagt PM0s
PMOS tranaitkox
hence Arming
2
onnectibn bebotenpouotr gupplynd ad oukput
node bring output levdl 'high'
- Thigsa ntar plot.This cquation glues a
Operatiane
The exbraploted Jotrsechion of thi lnc 'with When the lou input voltaqe t glyen to the
COh be ioterpreted as thxeshald CMOS nver ter then th PMOs tranlstor
voltage for devc Soitchcd ON whertas the NMOs tranittos is
SLot tched ON whertas the Nn0C tranalckor ill
OFE hy allauing the of clectron
ihnughout he gate kerminal and generaing
hlghoqle Qutput voltage
Simllarly ahen the hlghinput voltage
9nven to the CMOS overttr thunthu PMOS
transistDr le soitchd oFF ohrcaa the NMOs
Pehve Vesv
 tranictozwtll besultchedON auoidinq a
elechon Anm attaminq theoutput
many
valtage
Qna: Explain tranamiaion qate anddusign 4 l Mux
uaing transoisslon gake
NMOC Can pauechong Laglco but Carmal XI

pads a shonq loglc J whlle a PMOr suitch

pa chmnq loqie " but cannat
pasr
thongloole 'o
og ether Dn parallel thu
copnecting hem Arom
All anae
woltagehed An the ov to Voa X2
Can be An NMOScwitch and Cutut
PMOS ASwitch canbe combtned togethar in
paxallel to fom aparkdt soitch foy
pauin I a b ahdd o
o ighal
paing
Sucka Ruitch actsaavolHagecorbolled
shere the contnl ignal pplicd
to the gat of NMOS hranalsto and the
comphmtot to thu PMOS tranait toxgat
the PMO8 qatk. The Ql hat do you Mean by chnology callng hlha
complunentanytuoitchin alo calleda tonDibeen Lart typa o tcaliog
Lgale Tn adei to meek the demand of high deni
chipenMOStecnaloqy h M0QEETs art.
s'caled deion ilting Jo ncreasen the
packing densihy of MácEER ued nthe cino
Byscalin4the dimenjonu of Mos tanat
arc ncduced and thrcfnre variabon. Jh
characeristicl Ia expacd.
 Wite short noBe
Aluo phytal imitahon eventially etfect and hot 0n vlocity
utict the erttot of Scaling that ic clecton efcct ahuatonBody
In detail.
Ameically achtevable DVelocity Satuaiont
Scaling of fs cencerned it The d
droin t
syatmatic nductinn of overall dimenaíon Hhe courL
ualloatd by the auailable Camier
MOSEET cheakeandvoltagceechicVDs ficldapphcdcaAing
to
techoalogy
atio found
hile pracrvig the geomtic
In tha langer deicee
lous driften
edcchic Gteldchaphe
the elehic di£tL
chann vanc In caxlywith
-Ther da too typea o icaling
Hhe dlectric Areld intenaity
)Fallicaling HaLotey thio doc nct hold
Blonutant voltage soaling
elechic field
becauLie of Rcatlerinq Je high
Lcmall tLuting in high lechoe Breld Veny
) Full Scalog
Thie hupe of scaling pn Hh magitud
of fotrDol elettc eld o thi MOSEET Al cinilar type MOSEEET: at
are scaled doh by Lcomm0n fabicated on a
SLhstrat Therefore the cubstrate
while the dimensiona otage
factoyof sie all palkntial mut be alldevicu fa naxmally eaal
cealid doan praporionally by the Same Tnorder keep. Hhe subtrate to charbhl
scaling factozs Junchonu In cutolt Condihoh the ubttratc Ic
niormaly Connected Lncgate
2) Contant votage scalng. cirauit
NMOS crauit Tp MOS ET
Tn conttant volkaqe scaiog all dimnÝn MA hhnsistor may uire to be
MOSEET arte cluad by a tacto Connectcd
of a ió full sealing but the power llndur nDrMaandihons whh Vos> VrThe
Supplyvpltaneandthi iermlaal altage depletionwidth rernains conatant and chargc
Stmalnupchangtd camite are pulld inta the chanael Ao
RoUrce
-However as tha ubntrat blas woltaqe n
Increastd the oldt of thi channd subshrate
duplabion layer aliD jnerease caulting in an.
Tocease In the dentty of the trapcd
 Ladeplehor layer 2

3) Hot lechop_cfeti
Ltwhen elednn qain high kinetlcrgyard
shastpenctrating ota thu oldi layir
Joto
b thezoal euih bsumth detron ard
Lhalecnnatantlyaksash ard oitphoturs
and thn

6 Dehins andephiopouser dlay podud i

Ldetoil
oocrdelay podutk also krosn a
Lwitching pautLonuepiop papagaton dlay
Lavezaged dusing uoitchiog and pzopogabor
oLOAUed
consued
PDP inpllcs autragt enurgy
soitcbing leweot
maximum possible gat Froas le

2lp

2 50

CL VDDxfmas 1
2fmax
 2 aldhup cllad
mekolox1deauntcondudor detcs
lhayc dc number ol bipolar transsator saij
heat hrandalos
CIMOs lhare hoth
MOsEET
nchannl andpchannd
antJoleqraled on lhe sarne tubstok
diaspaton
the
nhealhep elledtnp-np structuzz diasipation
pbtrate.,neLwclland ha soura of paOS
and GD
branatetur BrT foaogd blosed - HencL
When one ollh. to theithin fraura
thun hlc for wand klascd BTTBIT
4s nput The cther
base of the econd
hc Jeacatolhe slgni ftcaht incheases Io dicipatian
Land
the Cument whlchburn out th 'devtc
leskazs try
digipatn
pt
hough he PMOS iranit hencame
h pt amount of
Laupply
The part t the
dicstp ated and tome
n-wel the Capacitoz

P- Subrtrate
Dusingloo to high trant the load
chazaedHence the neray
tatn fozm th pouer tupply to charge
a Deftne and cxplalo pDucr diseipaions in this capacitor VbD
detaile
The pautrdiscipaton 'odicatey that the Vout
of cntrgy cons unedper operatioh
and the of heat dissipated In th
 PAGE No.

DATE

2) Static Cons Lmphion

powcr discipatipn Ts aue to the
eakaqe aient The ctatic stady take
pouuer dinsipatioh of the
Rtate Ieakaqe Voo
The leakaqe upt ef thecM0r Ioverte
capiál to Zem fn rdeal LCalesibce the
PMOS ahd NMOC devtc neveron mult
stea dy state operation