2N5655G, 2N5657G

Plastic NPN Silicon

High-Voltage Power
Transistors
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and http://onsemi.com
AC line relays.

Features 0.5 AMPERE

POWER TRANSISTORS
• Excellent DC Current Gain NPN SILICON
• High Current−Gain − Bandwidth Product 250−350 VOLTS, 20 WATTS
• These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
MAXIMUM RATINGS (Note 1) 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc 3
2N5655G 250 BASE
2N5657G 350
Collector−Base Voltage VCB Vdc 1
2N5655G 275 EMITTER
2N5657G 375
Emitter−Base Voltage VEB 6.0 Vdc
Collector Current − Continuous IC 0.5 Adc
Collector Current − Peak ICM 1.0 Adc
TO−225
Base Current IB 1.0 Adc CASE 77−09
STYLE 1
Total Device Dissipation PD
@ TC = 25°C 20 W
Derate above 25°C 0.16 W/°C 1 2
3
Operating and Storage Junction TJ, Tstg – 65 to + 150 °C/W
Temperature Range
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
1. Indicates JEDEC registered data.
2
THERMAL CHARACTERISTICS N565xG

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Y = Year
WW = Work Week
2N565x = Device Code
x = 5 or 7
G = Pb−Free Package

ORDERING INFORMATION
Device Package Shipping

2N5655G TO−225 500 Units / Bulk

(Pb−Free)
2N5657G TO−225 500 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

December, 2013 − Rev. 12 2N5655/D
 2N5655G, 2N5657G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 100 mAdc (inductive), L = 50 mH)
2N5655G 250 −
2N5657G 350 −
Collector−Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0)
2N5655G 250 −
2N5657G 350 −
Collector Cutoff Current ICEO mAdc
(VCE = 150 Vdc, IB = 0)
2N5655G − 0.1
(VCE = 250 Vdc, IB = 0)
2N5657G − 0.1
Collector Cutoff Current ICEX mAdc
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655G − 0.1
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657G − 0.1
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655G − 1.0
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657G − 1.0
Collector Cutoff Current ICBO mAdc
(VCB = 275 Vdc, IE = 0)
2N5655G − 10
(VCB = 375 Vdc, IE = 0)
2N5657G − 10
Emitter Cutoff Current IEBO mAdc
(VEB = 6.0 Vdc, IC = 0) − 10
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE −
(IC = 50 mAdc, VCE = 10 Vdc) 25 −
(IC = 100 mAdc, VCE = 10 Vdc) 30 250
(IC = 250 mAdc, VCE = 10 Vdc) 15 −
(IC = 500 mAdc, VCE = 10 Vdc) 5.0 −
Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc
(IC = 100 mAdc, IB = 10 mAdc) − 1.0
(IC = 250 mAdc, IB = 25 mAdc) − 2.5
(IC = 500 mAdc, IB = 100 mAdc) − 10
Base−Emitter Voltage VBE Vdc
(IC = 100 mAdc, VCE = 10 Vdc) (Note 3) − 1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) 10 −
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 100 kHz) − 25
Small−Signal Current Gain hfe −
(IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.

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 2N5655G, 2N5657G

40
PD, POWER DISSIPATION (WATTS)

30
50 mH

20 X

200
Hg RELAY TO SCOPE
+ +
6.0 V 50 V
10 -
Y

300 1.0
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating Figure 2. Sustaining Voltage Test Circuit

Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.

1.0 There are two limitations on the power handling ability of

10 ms a transistor: average junction temperature and second
0.5
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC − VCE

500 ms
TJ = 150°C limits of the transistor that must be observed for reliable
0.2 1.0 ms operation; i.e., the transistor must not be subjected to greater
d­ dissipation than the curves indicate.
0.1 c The data of Figure 3 is based on TJ(pk) = 150_C; TC is
Second Breakdown Limit
Thermal Limit @ TC = 25°C
variable depending on conditions. Second breakdown pulse
0.05 Bonding Wire Limit limits are valid for duty cycles to 10% provided TJ(pk)
Curves apply below rated VCEO ≤ 150_C. At high case temperatures, thermal limitations
0.02 2N5655 will reduce the power that can be handled to values less than
2N5657 the limitations imposed by second breakdown.
0.01
20 30 40 60 100 200 300 400 600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Active−Region Safe Operating Area

300

200 VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN

100 TJ = +150°C

70
+100°C
50 + 25°C

30

20 -55°C

10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 4. Current Gain

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 2N5655G, 2N5657G

1.0

0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
0.6 VBE @ VCE = 10 V

0.4

VCE(sat) @ IC/IB = 10
0.2 TJ = + 25°C
IC/IB = 5.0
0
10 20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 5. “On” Voltages

300

200 TJ = + 25°C
Cib
C, CAPACITANCE (pF)

100
70
50

30

20 Cob

10
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

10 10
tr IC/IB = 10
5.0 IC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V 5.0
2.0 (2N5657, only)
VCC = 100 V, VBE(off) = 0 V
1.0 2.0 ts
t, TIME (s)

t, TIME (s)
μ

0.5
μ

td 1.0 tf
0.2
0.1 0.5 VCC = 100 V

0.05
0.2 VCC = 300 V
0.02
(Type 2N5657, only)
0.01 0.1
1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Turn−On Time Figure 8. Turn−Off Time

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 2N5655G, 2N5657G

PACKAGE DIMENSIONS

TO−225
CASE 77−09
4 ISSUE AC

1 2 3 2
3 1
FRONT VIEW BACK VIEW

E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.

PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
Q 3.80 4.20
L1
STYLE 1:
PIN 1. EMITTER
L 2., 4. COLLECTOR
3. BASE

2X b2

2X e
b c

FRONT VIEW SIDE VIEW

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