Bipolar Junction Transistor-2

6.720J/3.
43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-1
Lecture 35 - Bipolar Junction Transistor

(cont.)
May 3, 2007
Contents:
1. Current-voltage characteristics of ideal BJT (cont.)
Reading material:
del Alamo, Ch. 11, §11.2 (11.2.1)
Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-2
Key questions
• How does the BJT operate in other regimes?

• How does a complete model for the ideal BJT look like?
1. Current-voltage characteristics of ideal BJT (cont.)
� Forward-active regime (VBE > 0, VBC < 0)
Summary of key results:
WB << LB
n-Emitter p-Base n-Collector
IE<0 IC>0
IB>0
VBE > 0 VBC < 0
qVBE
IC = IS exp
kT
IS qVBE
IB = (exp − 1)
βF kT
qVBE IS qVBE
IE = −IC − IB = −IS exp − (exp − 1)
kT βF kT
• Current gain
n2i DB
IC NB WB NE DB WE
βF � � n2i DE
=
IB NB DE WB
NE WE
To maximize βF :
• NE � NB
• WE � WB (for manufacturing reasons, WE � WB )
• want npn, rather than pnp because this way DB > DE
βF hard to control ⇒ if βF is high enough (> 50), circuit techniques

effectively compensate for this.
• Equivalent circuit model
qVBE
B IS exp
kT
IS qVBE
(exp -1)
βF kT
qVBE
IC = IS exp
kT
IS qVBE
IB = (exp − 1)
βF kT
qVBE IS qVBE
IE = −IC − IB = −IS exp − (exp − 1)
kT βF kT
• Energy band diagram
E(n) B(p) C(n)
EC
EF
thermal�
equilibrium
EV
EC
Efe
forward� qVBE
active Efh
EV
qVBC
• Summary of minority carrier profiles (not to scale)
pE nB pC
� pCo
pEo nBo
x
-WE-xBE -xBE 0 WB WB+xBC WB+xBC+WC
� Reverse regime (VBE < 0, VBC > 0)
IE : electron injection from C to B, collection into E

IB : hole injection from B to C, recombination in C
IE>0 IC<0
IB>0
VBE < 0 VBC > 0
Minority carrier profiles (not to scale):
pE nB pC
� pCo
pEo nBo
x
Current equations (just like FAR, but role of collector and emitter
reversed):
qVBC
IE = IS exp
kT
IS qVBC
IB = (exp − 1)
βR kT
qVBC IS qVBC
IC = −IE − IB = −IS exp − (exp − 1)
kT βR kT
Equivalent-circuit model representation:
IS qVBC
(exp -1)
βR kT
qVBC
B IS exp
kT
Prefactor in IE expression is IS : emitter current scales with AE .
B E B B E B
IE AE
IB AC
C C
But, IB scales roughly as AC :
• downward component scales as AC

• upward component scales as AC − AE � AC
Hence, βR � 0.1 − 5 � βF .
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 18-8
Forward-active Gummel plot (VCE = 3 V ):
Reverse Gummel (VEC = 3 V ):
Energy band diagram:
E(n) B(p) C(n)
EC
thermal� EF
equilibrium
EV
Efe qVBC
EC qVBE
reverse
Efh
EV
� Cut-off regime (VBE < 0, VBC < 0)
IE : hole generation in E, extraction into B

IC : hole generation in C, extraction into B
IE>0 IC>0
IB<0
VBE < 0 VBC < 0
pE nB pC
� pCo
pEo nBo
x
Current equations:
IS
IE =
βF
IS IS
IB = − −
βF βR
IS
IC =
βR
These are tiny leakage currents (∼ 10−12 A)
Equivalent-circuit model representation:
IS
βR
both reverse �
biased
B
IS
βF
• Energy band diagram
E(n) B(p) C(n)
EC
EF
thermal�
equilibrium
EV
qVBE Efh
EC
cut-off Efe qVBC
EV
� Saturation regime (VBE > 0, VBC > 0)
IC , IE : balance of electron injection from E/C into B

IB : hole injection into E/C, recombination in E/C, respectively
IE IC
IB<0
VBE > 0 VBC > 0
pE nB pC
� pCo
pEo nBo
x
Current equations: superposition of forward active + reverse:
qVBE qVBC IS qVBC

IC = IS (exp − exp ) − (exp − 1)
kT kT βR kT
IS qVBE IS qVBC
IB = (exp − 1) + (exp − 1)
βF kT βR kT
IS qVBE qVBE qVBC
IE = − (exp − 1) − IS (exp − exp )
βF kT kT kT
IC and IE can have either sign, depending on relative magnitude of

VBE and VBC and βF and βR .
Equivalent circuit model representation (Non-Linear Hybrid-π Model):
IS qVBC
(exp -1)
βR kT
qVBE qV
B IS (exp - exp BC )
kT kT
IS qVBE
(exp -1)
βF kT
Complete model has only three parameters: IS , βF , and βR.
Energy band diagram:
E(n) B(p) C(n)
EC
thermal� EF
equilibrium
EV
EC
Efe qV
saturation qVBE BC
Efh
EV
In saturation, collector and base flooded with excess minority carriers

⇒ takes lots of time to get transistor out of saturation.
Key conclusions
• In FAR, current gain βF maximized if NE � NB .

• βF hard to control precisely: if big enough (> 50), circuit tech
niques can compensate for variations in βF .
• BJT design optimized for operation in forward-active regime ⇒
operation in inverse regime is poor: βR � βF .
• In saturation, BJT flooded with minority carriers ⇒ takes time
to get BJT out of saturation.
• Hybrid-π model: equivalent circuit description of BJT in all
regimes:
C
IS qVBC
(exp -1)
βR kT
qVBE qV
B IS (exp - exp BC )
kT kT
IS qVBE
(exp -1)
βF kT
• Only three parameters needed to describe behavior of BJT in

four regimes: IS , βF , and βR.

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6.720J/3.

43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-1

Lecture 35 - Bipolar Junction Transistor

1. Current-voltage characteristics of ideal BJT (cont.)

del Alamo, Ch. 11, §11.2 (11.2.1)

• How does the BJT operate in other regimes?

1. Current-voltage characteristics of ideal BJT (cont.)

� Forward-active regime (VBE > 0, VBC < 0)

Summary of key results:

n-Emitter p-Base n-Collector

VBE > 0 VBC < 0

βF hard to control ⇒ if βF is high enough (> 50), circuit techniques

• Equivalent circuit model

• Energy band diagram

E(n) B(p) C(n)

• Summary of minority carrier proﬁles (not to scale)

� Reverse regime (VBE < 0, VBC > 0)

IE : electron injection from C to B, collection into E

n-Emitter p-Base n-Collector

VBE < 0 VBC > 0

Minority carrier proﬁles (not to scale):

Equivalent-circuit model representation:

Prefactor in IE expression is IS : emitter current scales with AE .

But, IB scales roughly as AC :

• downward component scales as AC

Forward-active Gummel plot (VCE = 3 V ):

Reverse Gummel (VEC = 3 V ):

Energy band diagram:

E(n) B(p) C(n)

� Cut-oﬀ regime (VBE < 0, VBC < 0)

IE : hole generation in E, extraction into B

n-Emitter p-Base n-Collector

VBE < 0 VBC < 0

Minority carrier proﬁles (not to scale):

These are tiny leakage currents (∼ 10−12 A)

Equivalent-circuit model representation:

• Energy band diagram

E(n) B(p) C(n)

� Saturation regime (VBE > 0, VBC > 0)

IC , IE : balance of electron injection from E/C into B

n-Emitter p-Base n-Collector

VBE > 0 VBC > 0

Minority carrier proﬁles (not to scale):

Current equations: superposition of forward active + reverse:

qVBE qVBC IS qVBC

IC and IE can have either sign, depending on relative magnitude of

Equivalent circuit model representation (Non-Linear Hybrid-π Model):

Complete model has only three parameters: IS , βF , and βR.

Energy band diagram:

E(n) B(p) C(n)

In saturation, collector and base ﬂooded with excess minority carriers

• In FAR, current gain βF maximized if NE � NB .

• Only three parameters needed to describe behavior of BJT in

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