Ordering number:ENN6435

P-Channel Silicon MOSFET

2SJ520

Load Switching Applications

Features Package Dimensions

· Low ON resistance. unit:mm
· 2.5V drive. 2083B
[2SJ520]
6.5
2.3

1.5
5.0
4 0.5

7.0
5.5
0.85
0.7
1.2

0.8
1.6
7.5
0.6 0.5
1 : Gate
1 2 3 2 : Drain
3 : Source
4 : Drain
2.3 2.3 SANYO : TP
unit:mm
2092B
[2SJ520]
6.5 2.3
0.5
1.5

5.0
4
7.0
5.5

1.2

0.85 0.5
2.5

1 2 3
0.8

0.6
1.2 1 : Gate
0 to 0.2
2 : Drain
3 : Source
2.3 2.3
4 : Drain
SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2505 No.6435–1/4
 2SJ520

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS –20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID –10 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% –40 A
1 W
Allowable Power Dissipation PD
Tc=25˚C 20 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=–1mA, VGS=0 –20 V
Zero-Gate Voltage Drain Current IDSS VDS=–20V, VGS=0 –10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=–10V, ID=–1mA –0.4 –1.3 V
Forward Transfer Admittance | yfs | VDS=–10V, ID=–5A 8 12 S
RDS(on)1 ID=–5A, VGS=–4V 48 62 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=–1A, VGS=–2.5V 70 100 mΩ
Input Capacitance Ciss VDS=–10V, f=1MHz 950 pF
Output Capacitance Coss VDS=–10V, f=1MHz 530 pF
Reverse Transfer Capacitance Crss VDS=–10V, f=1MHz 160 pF
Turn-ON Delay Time td(on) See specified Test Circuit 20 ns
Rise Time tr See specified Test Circuit 200 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 230 ns
Fall Time tf See specified Test Circuit 230 ns
Total Gate Charge Qg VDS=–10V, VGS=–10V, ID=–5A 30 nC
Gate-to-Source Charge Qgs VDS=–10V, VGS=–10V, ID=–5A 5 nC
Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–5A 7 nC
Diode Forward Voltage VSD IS=–5A, VGS=0 –1.0 –1.5 V
Marking : J520

Switching Time Test Circuit

VDD=--10V

VIN
0V ID=--5A
--4V RL=2Ω

VIN D VOUT

PW=10µs
D.C.≤1%
G

P.G 50Ω 2SJ520

S

No.6435–2/4
 2SJ520
ID -- VDS ID -- VGS
--10 --10
VDS=--10V

0V

0V
--9 --9

--8.

.0 V
--6.

.0 V
--4
--8 --8

--3

V
.5

Drain Current, ID – A
Drain Current, ID – A

--2
--7 --7
--2.0V
--6 --6

--5 --5

--4 --4

--3 --3

C
°C --25°
--2 VGS=--1.5V --2
5°
C
7
--1 --1
T c=

25
0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5
Drain-to-Source Voltage, VDS – V IT00944 Gate-to-Source Voltage, VGS – V IT00945
RDS(on) -- VGS RDS(on) -- TC
100 140
Tc=25°C
90
120

On-State Resistance, RDS (on) – mΩ

On-State Resistance, RDS (on) – mΩ

80
ID=--1A
70 100
--5A .5V
=--2
VGS
.0A,
60
80
--1
I D=
Static Drain-to-Source
Static Drain-to-Source

50 V
--4.0
VG S=
5.0A,
60
I D=--
40

30 40

20
20
10

0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS – V IT00946 Case Temperature, Tc – ˚C IT00947

yfs -- ID IF -- VSD
100 --10
7 VDS=--10V 7 VGS = 0
Forward Transfer Admittance, | yfs | – S

5 5
3 3
2 2
Forward Current, IF – A

10 --1.0
7 7
5 5
25°
C
3 3
°C
2 25 2
=--
Tc
1.0 °C --0.1
75
Tc=75°C

7 7
--25°C

5 5
25°C

3 3
2 2

0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID – A IT00948 Diode Forward Voltage, VSD – V IT00949
SW Time -- ID Ciss, Coss, Crss -- VDS
1000 10000
VDD=--10V f=1MHz
7 7
VGS=--4V
5 5
Switching Time, SW Time – ns

td(off)
3 3
Ciss, Coss, Crss – pF

2 tf 2

tr Ciss
100 1000
7 7 Coss
5 5

3 3

2 2 Crss
td(on)
10 100
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID – A IT00950 Drain-to-Source Voltage, VDS – V IT00951

No.6435–3/4
 2SJ520
VGS -- Qg ASO
--10 --100
VDS=--10V 7
--9 ID=--5A 5 IDP=--40A 100µs
Gate-to-Source Voltage, VGS – V

3 1m
--8 s
2 10
ms

Drain Current, ID – A
--7 IDP=--10A
--10 10
7 0m
--6
DC s
5
--5
op
3 era
2 tio
--4 n
--1.0 Operation in this
--3 area is limited by RDS(on).
7
5
--2
3
--1 2 Tc=25°C
Single pulse
0 --0.1
0 5 10 15 20 25 30 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg – nC IT00952 Drain-to-Source Voltage, VDS – V IT00953
PD -- Ta PD -- Tc
1.2 25
Allowable Power Dissipation, PD – W

Allowable Power Dissipation, PD – W

1.0
20

0.8
15

0.6

10
0.4

5
0.2

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C IT00954 Case Temperature, Tc – ˚C IT00955

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6435–4/4