1. Non radia ve recombina on life me > radia ve recombina on life me. Non radia ve recombina- on only hurts the e ciency, because no emission happens from that type of recombina on. 2.A defect free direct band gap semiconductor is required to make an e cient LED. GaAs can be used to make infrared LED. 3.ZnTe and ZnSe; because of their bandgap.
4. spread = (1.8kT/hc)*λ2 => Reducing the temperature by using iquid nitrogen(77K) or icebath(273K) will reduce the spread. Switching to lower wavelength light (green to blue) will also reduce the spread. 5. GaN has refrac ve index of 2.4 while GaAs has 3.95 ; since escape cope is a func on of the refraac- ve index , i.e., higher the refrac ve index lower the cri cal angle and narrower the escape cone. 6. LEDs give best results when they are made of direct bandgap materials. This is THE most important criterion while selec ng a material for LED applica ons.
7. Two LEDs A and B, biased at the same voltage have the same Wall-plug ef ciency. LED A emits light of wavelength 300nm and B emits light of wavelength 500nm. Which of the LEDs has a higher External- Quantum ef ciency.
a. A has a higher EQE than B
b. B has a higher EQE than A
c. A and B have the same EQE
d. Cannot predict qλ ηEQE = ηwall V hc Therefore, for the same given wall-plug ef ciency and operating voltage, higher wavelength implies higher external quantum ef ciency.
8. Pick the following options that are correct regarding LED quantum wells
a. Quantum wells lead to better carrier con nement which leads to a lower radiative recombination lifetime
b. Quantum wells made with indirect bandgap semiconductors can also lead to light emission
c. Quantum wells have to be surrounded by larger bandgap materials for ef cient light extraction
d. EQE of quantum well LEDs is greater than 1 because of better carrier con nement
Quantum wells do lead to improved carrier con nement as a result of bound states which are quantum states localized in the well region. Lower radiative recombination lifetime implies a higher probability for radiative recombination.
Radiation emitted from quantum wells should not be absorbed by the surrounding material. Therefore, the surrounding material must be of a higher bandgap. ti ti fi ti ti fi ti ffi ti ti ti fi fi fi ti ti ti ti fi ti fi ffi fi ti ti ti 9. You are provided with a P+N junction LED. How should the device be biased for light extraction.
a. Device should be forward biased
b. Device should be reverse biased
c. Device can be biased in both forward and reverse bias
d. None of the above
Only under forward bias, are large concentration of carrier injected into the depletion region where they can recombine radiatively.
