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LED3

LEDs are semiconductor p-n junctions that emit light through electroluminescence when forward biased. The wavelength of emitted light depends on the band gap of the semiconductor. Advantages of LEDs include longevity, efficiency, light intensity, cost, and robustness compared to incandescent bulbs. Visible LEDs require semiconductors with band gaps corresponding to the visible light spectrum. Common visible LED materials are from the III-V and II-VI semiconductor groups like GaN, GaP, GaAs, with GaN being widely used for white LEDs.

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60 views

LED3

LEDs are semiconductor p-n junctions that emit light through electroluminescence when forward biased. The wavelength of emitted light depends on the band gap of the semiconductor. Advantages of LEDs include longevity, efficiency, light intensity, cost, and robustness compared to incandescent bulbs. Visible LEDs require semiconductors with band gaps corresponding to the visible light spectrum. Common visible LED materials are from the III-V and II-VI semiconductor groups like GaN, GaP, GaAs, with GaN being widely used for white LEDs.

Uploaded by

kundannn
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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What is LED?

LED are semiconductor p-n junctions that under forward bias conditions can emit radiation by electroluminescence in the UV, visible or infrared regions of the electromagnetic spectrum. The qaunta of light energy released is approximately proportional to the band gap of the semiconductor.

Getting to know LED


Advantages of Light Emitting Diodes (LEDs) Longevity: The light emitting element in a diode is a small conductor chip rather than a filament which greatly extends the diodes life in comparison to an incandescent bulb (10 000 hours life time compared to ~1000 hours for incandescence light bulb) Efficiency: Diodes emit almost no heat and run at very low amperes. Greater Light Intensity: Since each diode emits its own light Cost: Not too bad Robustness: Solid state component, not as fragile as incandescence light bulb

LED chip is the part that we shall deal with in this course

Luminescence is the process behind light emission


Luminescence is a term used to describe the emission of radiation from a solid when the solid is supplied with some form of energy. Electroluminescence excitation results from the application of an electric field In a p-n junction diode injection electroluminescence occurs resulting in light emission when the junction is forward biased

Excitation
E Electron (excited by the biased forward voltage) is in the conduction band

Hole is in valance band

Normally the recombination takes place between transition of electrons between the bottom of the conduction band and the top of the valance band (band exterma). The emission of light is therefore; hc/ = Ec-Ev = Eg(only direct band gap allows radiative transition)

How does it work?

P-n junction

Electrical Contacts

A typical LED needs a p-n junction There are a lot of electrons and holes at the junction due to excitations Electrons from n need to be injected to p to promote recombination Junction is biased to produce even more e-h and to inject electrons from n to p for recombination to happen

Recombination produces light!!

Injection Luminescence in LED


Under forward bias majority carriers from both sides of the junction can cross the depletion region and entering the material at the other side. Upon entering, the majority carriers become minority carriers For example, electrons in n-type (majority carriers) enter the p-type to become minority carriers The minority carriers will be larger minority carrier injection Minority carriers will diffuse and recombine with the majority carrier. For example, the electrons as minority carriers in the p-region will recombine with the holes. Holes are the majority carrier in the pregion. The recombination causes light to be emitted Such process is termed radiative recombination.

Recombination and Efficiency


(a) p ECEg EF EV eVo n+ (b) p Eg h =Eg n+

Electrons in CB
Holes in VB

Ideal LED will have all injection electrons to take part in the recombination process In real device not all electron will recombine with holes to radiate light Sometimes recombination occurs but no light is being emitted (non-radiative) Efficiency of the device therefore can be described Efficiency is the rate of photon emission over the rate of supply electrons

Emission wavelength, g
The number of radiative recombination is proportional to the carrier injection rate

Carrier injection rate is related to the current flowing in the junction


If the transition take place between states (conduction and valance bands) the emission wavelength, g = hc/(EC-EV) EC-EV = Eg g = hc/Eg

Construction of Typical LED


Light output
Al SiO2

p
n
Electrical contacts

Substrate

LED Construction
Efficient light emitter is also an efficient absorbers of radiation therefore, a shallow p-n junction required. Active materials (n and p) will be grown on a lattice matched substrate. The p-n junction will be forward biased with contacts made by metallisation to the upper and lower surfaces. Ought to leave the upper part clear so photon can escape. The silica provides passivation/device isolation and carrier confinement

Efficient LED
Need a p-n junction (preferably the same semiconductor material only different dopants) Recombination must occur Radiative transmission to give out the right coloured LED Right coloured LED hc/ = Ec-Ev = Eg so choose material with the right Eg Direct band gap semiconductors to allow efficient recombination All photons created must be able to leave the semiconductor Little or no reabsorption of photons

Correct band gap

Direct band gap

Materials Requirements
Efficient radiative pathways must exist Material can be made p and n-type

Direct band gap materials e.g. GaAs not Si

UV-ED ~0.5-400nm

Eg > 3.25eV
LED - ~450-650nm Eg = 3.1eV to 1.6eV IR-ED- ~750nm- 1nm Eg = 1.65eV

Candidate Materials
Materials with refractive index that could allow light to get out Readily doped n or p-types

Visible LED
Definition: LED which could emit visible light, the band gap of the materials that we use must be in the region of visible wavelength = 390- 770nm. This coincides with the energy value of 3.18eV- 1.61eV which corresponds to colours as stated below:

Colour of an LED should emits

Violet Blue Green Yellow Orange Red

~ 3.17eV ~ 2.73eV ~ 2.52eV ~ 2.15eV ~ 2.08eV ~ 1.62eV

The band gap, Eg that the semiconductor must posses to emit each light

Electromagnetic Spectrum

Visible lights

V ~ 3.17eV B ~ 2.73eV G ~ 2.52eV

Y ~ 2.15eV
O ~ 2.08eV R ~ 1.62eV

The appearance of the visible light will be the results of the overlap integral between the eye response curve and the spectral power of the device the peak of the luminous curve will not in general be the same as the peak of the spectral power curve

Candidate Materials Group III-V & Group II-VI


Group II Group III Group IV Group V

iii iv ii
Al Ga In

v
N P As

Periodic Table to show group III-V and II-V binaries

Group III-V (1950)


The era of IIIV compound semiconductors started in the early 1950s when this class of materials was postulated and demonstrated by Welker (1952, 1953). The class of IIIV compounds had been an unknown substance prior to the 1950s that does not occur naturally. The novel man-made IIIV compounds proved to be optically very active and thus instrumental to modern LED technology.

Group III-V LED materials


Al Ga In N P As AlN, AlP,AlAs

GaN, GaP, GaAs


InN, InP, InAs

Binary compounds Ternary compounds

GaAs

GaP
GaAl

GaAsP
GaAsAl

Questions to ask when choosing the right material: 1. Can it be doped or not? 2. What wavelength it can emit? 3. Would the material able to allow radiative recombiation? 4. Direct or indirect semiconductor?

Applications of LEDs

Your fancy telephone, i-pod, palm pilot and digital camera

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