Moc3023m D
Moc3023m D
Moc3023m D
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Features
• Excellent IFT Stability − IR Emitting Diode Has Low Degradation CATHODE 2 5 NC*
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test 1594 Vpeak
with tm = 1 s, Partial Discharge < 5 pC
External Creepage ≥7 mm
External Clearance ≥7 mm
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2
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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3
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
ELECTRICAL CHARACTERISTICS
IDRM Peak Blocking Current, Either Direction Rated VDRM, IF = 0(1) All 10 100 nA
dv/dt Critical Rate of Rise of Off−State Volt- Rated VDRM, IF = 0 All 1000 V/ms
age
1. Test voltage must be applied within dv/dt rating.
TRANSFER CHARACTERISTICS
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
IFT LED Trigger Current Voltage = 3 V(2) MOC3020M 30 mA
MOC3010M
15
MOC3021M
MOC3011M
10
MOC3022M
MOC3012M
5
MOC3023M
VTM Peak On−State Voltage, Either Direc- ITM = 100 mA peak, All 1.8 3.0 V
tion IF = Rated IFT
ISOLATION CHARACTERISTICS
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
VISO Isolation Voltage (3) t = 1 Minute All 4170 VACRMS
3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
1.8
800
1.7
600
1.5
200
1.4
TA = −55 C
o
0
1.3 −200
o
TA = 25 C
1.2 o −400
TA = 100 C
1.1 −600
1.0 −800
1 10 100 −3 −2 −1 0 1 2 3
20
PWin ≥ 100 ms
1.2
15
1.1
1.0 10
0.9
5
0.8
0
1 2 5 10 20 50 100
0.7
NORMALIZED TO TA = 25_C
PWin − LED TRIGGER WIDTH 〈(ms)
0.6
−40 −20 0 20 40 60 80 100
Figure 5. LED Current Required to Trigger vs.
AMBIENT TEMPERATURE − TA (oC)
LED Pulse Width
Figure 4. Trigger Current vs. Ambient
10000
Temperature
IDRM − LEAKAGE CURRENT (nA)
1000
100
10
0.1
−40 −20 0 20 40 60 80 100
o
TA − AMBIENT TEMPERATURE ( C)
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5
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
TRIAC DRIVER
VCC RLED R POWER TRIAC
AC LINE
CONTROL Q
LOAD
RET. RLED = (VCC − VFLED − VSATQ) / IFT
R = VPAC / ITSM
Figure 7. Basic Driver Circuit
TRIAC DRIVER
VCC RLED R POWER TRIAC
RS
MOV AC LINE
CS
CONTROL
LOAD
RET.
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MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
Reflow Profile
300
280 260_C
260
>245_C = 42 s
240
220
200
180
160 _C = 90 s
_C
140
120
100 1.822_C/s Ramp−up Rate
80
60
40
20 33 s
0
0 60 120 180 270 360
Time (s)
Figure 9. Reflow Profile
ORDERING INFORMATION
Part Number Package Shipping
MOC3010M DIP 6−Pin 50 Units / Tube
MOC3010SM SMT 6−Pin (Lead Bend) 50 Units / Tube
MOC3010SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel
MOC3010VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3010SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3010SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel
MOC3010TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3023M product families.
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MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
MARKING INFORMATION
1
ON
MOC3010 2
6
V X YY Q
3 4 5
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13450G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13451G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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