BCP 51/ 52/ 53

PNP MEDIUM POWER TRANSISTORS IN SOT223

Features Mechanical Data

 BVCEO > -45V, -60V & -80V  Case: SOT223
 IC = -1A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound.
 ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0
 2W Power Dissipation  Moisture Sensitivity: Level 1 per J-STD-020
 Low Saturation Voltage VCE(sat) < -500mV @ -0.5A  Terminals: Finish - Matte Tin Plated Leads, Solderable per
 Gain Groups 10 and 16 MIL-STD-202, Method 208
 Complementary NPN types: BCP54, 55 and 56  Weight: 0.112 grams (approximate)
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3) Applications
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)  Medium Power Switching or Amplification Applications
 AF Driver and Output Stages

SOT223 C

E
Top View Device Symbol Top View
Pin-Out

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BCP51TA AEC-Q101 BCP 51 7 12 1,000
BCP5110TA AEC-Q101 BCP 5110 7 12 1,000
BCP5116TA AEC-Q101 BCP 5116 7 12 1,000
BCP5116TC AEC-Q101 BCP 5116 13 12 4,000
BCP52TA AEC-Q101 BCP 52 7 12 1,000
BCP5210TA AEC-Q101 BCP 5210 7 12 1,000
BCP5216TA AEC-Q101 BCP 5216 7 12 1,000
BCP53TA AEC-Q101 BCP 53 7 12 1,000
BCP53QTA Automotive BCP 53 7 12 1,000
BCP5310TA AEC-Q101 BCP 5310 7 12 1,000
BCP5316TA AEC-Q101 BCP 5316 7 12 1,000
BCP5316TC AEC-Q101 BCP 5316 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

BCP = Product Type Marking Code, Line 1.

xxxx = Product Type Marking Code, Line 2 as follows:
BCP
xxxx BCP51 = 51 BCP52 = 52 BCP53 = 53
BCP5110 = 5110 BCP5210 = 5210 BCP5310 = 5310
BCP5116 = 5116 BCP5216 = 5216 BCP5316 = 5316

BCP 51 / 52 / 53 1 of 7 March 2014

Datasheet Number: DS35366 Rev. 5 – 2 www.diodes.com © Diodes Incorporated
 BCP 51/ 52/ 53

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol BCP51 BCP52 BCP53 Unit
Collector-Base Voltage VCBO -45 -60 -100 V
Collector-Emitter Voltage VCEO -45 -60 -80 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -1
A
Peak Pulse Collector Current ICM -2
Continuous Base Current IB -100
mA
Peak Pulse Base Current IBM -200

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 2 W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 62 C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 19.4 C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 C

ESD Ratings (Note 8)

Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

BCP 51 / 52 / 53 2 of 7 March 2014

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 BCP 51/ 52/ 53

Thermal Characteristics and Derating Information

160
Thermal Resistance (°C/W)

60 50mm x 50mm 1oz Cu

140 50mm x 50mm 1oz Cu

Maximum Power (W)

Tamb = 25°C
Tamb = 25°C
50 120 Single pulse
40 100
D=0.5
80
30
60
20 D=0.2 Single Pulse
40
D=0.05
10 20
D=0.1
0 0
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
Max Power Dissipation (W)

2.0 50mm x 50mm

1oz Cu

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)

Derating Curve

BCP 51 / 52 / 53 3 of 7 March 2014

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 BCP 51/ 52/ 53

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
BCP51 -45
Collector-Base
BCP52 BVCBO -60 — — V IC = -100µA
Breakdown Voltage
BCP53 -100
BCP51 -45
Collector-Emitter
BCP52 BVCEO -60 — — V IC = -10mA
Breakdown Voltage (Note 9)
BCP53 -80
Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -10µA
-0.1 VCB = -30V
Collector Cut-off Current ICBO — — μA
-20 VCB = -30V, TA = +150°C
Emitter Cut-off Current IEBO — — -20 nA VEB = -4V
25 — — IC = -5mA, VCE = -2V
All versions 40 — 250 IC = -150mA, VCE = -2V
Static Forward Current Transfer Ratio (Note 9) 25 — — — IC = -500mA, VCE = -2V
hFE
10 gain grp 63 — 160 IC = -150mA, VCE = -2V
16 gain grp 100 — 250 IC = -150mA, VCE = -2V
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) — — -0.5 V IC = -500mA, IB = -50mA
Base-Emitter Turn-On Voltage (Note 9) VBE(on) — — -1.0 V IC = -500mA, VCE = -2V
IC = -50mA, VCE = -10V
Transition Frequency fT 150 — — MHz
f = 100MHz
Output Capacitance Cobo — — 25 pF VCB = -10V, f = 1MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

1.0 500
VCE = -5V
IB = 10mA
IB = 8mA
0.8 400
IC, COLLECTOR CURRENT (A)

hFE, DC CURRENT GAIN

T A = 150°C
IB = 6mA
0.6 300
IB = 4mA T A = 85°C

0.4 200 T A = 25°C

IB = 2mA

0.2 100
T A = -55°C

0 0
0 1 2 3 4 5 0.001 0.01 0.1 1 10
-VCE, COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (A)
Fig. 1 Typical Collector Current Fig. 2 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage

BCP 51 / 52 / 53 4 of 7 March 2014

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 BCP 51/ 52/ 53
0.5
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0

-VCE(SAT), COLLECTOR-EMITTER
0.4

SATURATION VOLTAGE (V)

0.8
TA = -55°C

0.3
0.6 TA = 25°C
TA = 150°C

TA = 85°C 0.2 TA = 85°C

0.4

TA = 150°C
TA = 25°C
0.2 0.1
VCE = -2V
TA = -55°C

0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
-IC, COLLECTOR CURRENT(A) -IC, COLLECTOR CURRENT (A)
Fig 3 Typical Base-Emitter Turn-On Voltage Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current

1.2 300
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)

fT, GAIN-BANDWIDTH PRODUCT (MHz)

1.0 250

0.8 200
T A = -55°C

0.6 TA = 25°C 150

TA = 85°C
0.4 100
TA = 150°C VCE = -5V
f = 100MHz
0.2 50
IC / IB = 10

0 0
0.001 0.01 0.1 1 10 20 0
40 60 80 100
-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Saturation Voltage Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
vs. Collector Current

160

140 f = 1MHz

120
CAPACITANCE(pF)

100

80
Cibo
60

40

20
Cobo
0
0 10 20 30 40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics

BCP 51 / 52 / 53 5 of 7 March 2014

Datasheet Number: DS35366 Rev. 5 – 2 www.diodes.com © Diodes Incorporated
 BCP 51/ 52/ 53

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D
b1 Q
C

SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
E E1
b 0.60 0.80 0.70
Gauge
b1 2.90 3.10 3.00
Plane C 0.20 0.30 0.25
0.25 D 6.45 6.55 6.50
Seating
Plane
L E 3.45 3.55 3.50
e1 b
E1 6.90 7.10 7.00
0° e - - 4.60
-1
e 0°
e1 - - 2.30
L 0.85 1.05 0.95
A A1 7° Q 0.84 0.94 0.89
All Dimensions in mm
7°

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1
Dimensions Value (in mm)
Y1 X1 3.3
X2 1.2
Y1 1.6
C1 Y2 1.6
C1 6.4
C2 2.3
Y2

C2
X2

BCP 51 / 52 / 53 6 of 7 March 2014

Datasheet Number: DS35366 Rev. 5 – 2 www.diodes.com © Diodes Incorporated
 BCP 51/ 52/ 53

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

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failure of the life support device or to affect its safety or effectiveness.

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Copyright © 2014, Diodes Incorporated

www.diodes.com

BCP 51 / 52 / 53 7 of 7 March 2014

Datasheet Number: DS35366 Rev. 5 – 2 www.diodes.com © Diodes Incorporated
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