FCX591
FCX591
FCX591
A Product Line of
Diodes Incorporated
FCX591A
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Application
• Power MOSFET & IGBT gate driving
• Low loss power switching
SOT89
C
E
B C C
B
E
Top View Device Symbol Top View
Pin Out
Marking Information
FCX591A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 1 W
Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 125 °C/W
Thermal Resistance, Junction to Leads (Note 6) RθJL 10.01 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
FCX591A
1.0 120
Max Power Dissipation (W)
100
Single Pulse. T amb=25°C
Max Power Dissipation (W)
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
FCX591A
FCX591A
FCX591A
D1 0
.20
R0 C
SOT89
1
Dim Min Max
H A 1.40 1.60
H
E B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
B1 B L
D 4.40 4.60
D1 1.62 1.83
e
E 2.29 2.60
8° (4X) e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
A
L 0.89 1.20
All Dimensions in mm
D
X1
Dimensions Value (in mm)
X 0.900
X2 (2x) X1 1.733
X2 0.416
Y1 Y 1.300
Y3 Y4 Y1 4.600
Y2 1.475
Y Y2 Y3 0.950
Y4 1.125
C C 1.500
X (3x)
FCX591A
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