Chapter 4

Metal Oxide Semiconductor Field

Effect Transistors (FET)
MOSFET AC Analysis
By
Wan Rosmaria Wan Ahmad
for ELE424/ELE422
Mar-Aug 2023

1
Subtopic in MOSFET AC Analysis
1. Introduction
2. Load Lines and Small Signal Parameters
3. MOSFET Small-Signal AC Analysis
4. Common Source Amplifiers

2
Introduction
MOSFETs in Linear Amplifier
• We will now focus on the use of the MOSFETs in linear amplifier applications.
Linear amplifiers imply that, for the most part, we are dealing with analog
signals that may vary continuously with respect to time.
• A linear amplifier magnifies an input signal and produces an output signal
whose magnitude is larger and directly proportional to the input signal.
• Although a major use of MOSFETs is in digital applications, they are also
used in linear amplifier circuits.

3
Linear Amplification
• When symmetrical sinusoidal signals are applied to the input of an amplifier, the
magnified output is directly proportional to the input, as long as the amplifier
operation remains within the expected region.
• Distortion is avoided in linear amplification.

Ref: http://www.electronics-tutorials.ws/ 4
Load Lines and Small Signal
Parameters

5
Common Source Circuit
with ac signal vi
• This shows an NMOS common source
circuit with an ac source in series with
the dc source. Let’s assume the ac signal
is sinusoidal.

6
Load line and Q-points
• This shows the transistor characteristics,
dc load line, and Q-point.
• The dc load line and Q-point here are
functions of vGS , VDD, RD, and the
transistor parameters.
• For the output voltage to be a linear
function of the input voltage, the transistor
must be biased in the saturation region.
• DC biasing will ensure if the Q-point will
be in the saturation region or non-
saturation region.

7
 Load line with ac signal
• Let’s consider the load line with sinusoidal variations in
vGS, iD, and vDS, as a result of the sinusoidal source vi.
• With vi, vGS is a combination of dc and ac components:
vGS = VGSQ + vi
• As vi increases, the instantaneous value of vGS increases,
and Q-point moves up the load line. A larger value of vGS
means a larger iD and a smaller vDS .
• For a negative vi (the negative portion of the sine wave),
vGS and the Q point moves down the load line. A smaller
vGS value means a smaller iD and increased value of vDS
as the Q-point travels down the loadline.

8
Load line with ac signal for linear
amplifier
• For the FET to operate as a linear amplifier, the
transistor must be biased in the saturation region,
and the instantaneous iD and vDS must also be
confined to the saturation region.
• The output signal must avoid cutoff (iD = 0) and
must stay in the saturation region (vDS > vDS(sat)).
• If the output exceeds this limit, a portion of the
output signal will be clipped, and signal distortion
will occur.
• This maximum range of output signal can be
determined from the load line.

9
Notation used in the text
• Take note of the terms used – if
it considers only dc (constant
value), or only ac (analog signal
that varies with time) or both.

10
How do we know if ac signal is a “small
signal”?

11
Introducing gm, transconductance
parameter
• Small signal id is related to vgs by the
transconductance gm.
• The transconductance is a transfer coefficient relating
output current to input voltage and can be thought of
as representing the gain of the transistor:

• In saturation region;

gm is the slope of the curve. If the time-

varying signal vgs is sufficiently small,
gm is a constant. With the Qpoint in the
saturation region, id is linearly
controlled by vgs.

12
Example: Calculation of gm from given
values
Question: Calculate the transconductance of an NMOS with parameters VTN = 0.4 V, kn’ =
100μA/V2, and W/L = 25 and ID = 0.40 mA.
Solution: The conduction parameter is

Assuming the transistor is biased in the saturation region, the transconductance is determined
from equation (4.8(b)) as;

Comment: The value of the transconductance can be increased by the increasing the
transistor W/L ratio and also by increasing the quiescent drain current.

13
 MOSFET
Small-Signal AC Analysis

14
MOSFET Introduction to Small-Signal AC Analysis:
AC Equivalent Circuit

• The ac equivalent circuit in is developed by setting

the dc sources equal to zero.
• The small-signal relationships are given;

• In the ac equivalent circuit, the dc voltage sources

are equal to zero. We say that the node connecting
RD and VDD is at “signal ground”.

15
MOSFET Introduction to Small-Signal AC Analysis:
NMOS Small Signal Equivalent Circuit

• We assume for this stage that we are handling signal frequency Small-signal Eq cct of NMOS
that is sufficiently low so that any capacitance at the gate terminal
can be neglected.
• The input to the gate thus appears as an open circuit, or an infinite
resistance.
• Between terminals D and S, gm that we know is a function of the
Q-point, is included.
Small-signal Eq cct of the
• If we take into account finite output resistance for MOSFET in common-source circuit example
saturation region, ro, it is between D and S terminals.

• To find gain Av, find vo/vi from Ohm’s Law/KVL at output loop
that has vgs term, and replace vgs term from Ohm’s Law/KVL at
input loop that relates vgs in terms of vi.

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MOSFET Introduction to Small-Signal AC Analysis:
Example: Small Signal Equation circuit and find gain

• Determine the small signal voltage gain.

• Given dc values are:
VGSQ = 2.12 V, VDD = 5V, and RD = 2.5 kΩ.
• Given that transistor parameters are:
VTN = 1 V, Kn = 0.80 mA/V2 , and λ = 0.02 V−1.

17
Solution:
AC Analysis
Transconductance, gm
From DC Analysis;
VGSQ = 2.12 V, VDD = 5V, and RD = 2.5 kΩ. 𝑔𝑚 = 2 𝐾𝑛 𝐼𝐷𝑄 =2 0.8𝑚 1𝑚 = 1.789𝑚A/V2
1 1
Assume transistor operates in saturation region 𝑟𝑜 = = = 50𝑘Ω (from λ = 0.02 V−1)
𝜆𝐼𝐷𝑄 0.02 1.0𝑚
IDQ = KN(VGSQ – VTN)2
= 0.8m(2.12 - 1)2 AC Equivalent circuits
= 1.0mA

Checking assumption
VDD - VD = IDRD (VD =VDS)
VD = VDD - IDRD
= 5 – (1m)(2.5k) ro//RD= 50k//2.5k = 2.381kΩ
= 2.5V
Since Vs=0, KVL at output
VD =VDS + VS = VDS = 2.5V
Vo = - gmVgs (ro//RD)
VDS(sat) = (VGS – VTN) vi = Vgs
= (2.12 - 1) 𝑣𝑜 −𝑔𝑚 𝑣𝑔𝑠 𝑟𝑜 ∥ 𝑅𝐷
𝐴𝑣 = = = −𝑔𝑚 𝑟𝑜 ∥ 𝑅𝐷
= 1.12 V 𝑣𝑖 𝑣𝑔𝑠
Since VDS≥ VDS(sat), assumption that the transistor Find gain, Av;
operates in saturation is verified. Av = - (1.789m)(2.381k) = - 4.26 18
 Problem-Solving Technique:
MOSFET Small-Signal Amplifiers AC Analysis
Since we are dealing with linear amplifiers, superposition applies,
which means that we can perform the dc and ac analyses
separately.
1. Analyze the circuit with only the dc sources present. This
solution is the dc or quiescent solution. MOSFET must be
biased in the saturation region in order to produce a linear
amplifier.
2. Replace each element in the circuit with its small-signal model,
including MOSFET.
3. Analyze the small-signal equivalent circuit, setting the dc
source components equal to zero, to produce the response of
the circuit to the time-varying input signals only.

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 Small-Signal AC Analysis:
PMOS Small Signal Equivalent Circuit
• Compared to the circuit containing the NMOS transistor, note: AC Equivalent Circuit of PMOS
• Power supply voltage VDD is connected to the source.
• Change in current directions and voltage polarities.

AC Equivalent Circuit of PMOS Common-

Source circuit

PMOS Common- AC Equivalent

Source Circuit Circuit
𝑣𝑜 𝑔𝑚 𝑣𝑠𝑔 𝑟𝑜 ∥ 𝑅𝐷
𝐴𝑣 = = = −𝑔𝑚 𝑟𝑜 ∥ 𝑅𝐷
𝑣𝑖 −𝑣𝑠𝑔 20
The Common-Source Amplifier

21
Basic Transistor Configurations
Three basic single transistor amplifier configurations can be formed, depending on
which of the three transistor terminals is used as signal ground: common source,
common drain (source follower), and common gate.
In ELE424, we will only focus on common-source amplifiers.
The input and output resistance characteristics of amplifiers are important in
determining loading effects. These parameters, as well as voltage gain, have their uses
under different conditions, where each amplifier is most useful.

22
 Introducing the Common-Source Amplifier
• This particular circuit shows a basic common-source
circuit with voltage-divider biasing.
Represents Thevenin
• Source is at ground potential - hence the name Equivalent Circuit of
the source circuit
common source.
• The dc transistor biasing is established by R1 and R2.
RD and VDD determines the load line hence the
possible Q-point.
• vi is the ac signal source and Rsi is the signal source
resistance.
• The coupling capacitor CC provides dc isolation
between the amplifier and the signal source.
• The dc transistor biasing is not disturbed by the dc
levels from the source circuit, when the signal source
is capacitively coupled to the amplifier.
23
 The Common-Source Amplifier and
Loadline
• The graph shows the dc load line, with
the transition point (that separates the
saturation bias region and non-saturation
bias region), and the Qpoint, which is in
the saturation region.
• In order to provide the maximum
symmetrical output voltage swing and
keep the transistor biased in the
saturation region, the Q-point must be
near the middle of the saturation region.
• At the same time, the input signal must
be small enough for the amplifier to
remain linear.

24
Common-Source Amplifier
• The small-signal equivalent circuit of common-
source amplifier with input source vi and Rsi is
shown.

25
Example:
Common Source Amplifier with source signal
resistor, Rsi included
• Determine the small-signal voltage gain and
input and output resistances of a common-source
amplifier.
• Given parameters:
VDD = 3.3 V, RD = 10 k Ω, R1= 140 kΩ,
R2 = 60 kΩ, and RSi = 4kΩ.
• The transistor parameters are:
VTN = 0.4 V, Kn = 0.5mA/V2, and λ = 0.02 V−1

26
 Assume transistor operates in saturation region
IDQ = KN(VGSQ – VTN)2
= 0.5m(0.99 – 0.4)2
= 0.174mA

Find VD;
VDD - VD= IDRD
VD = VDD – IDRD
= 3.3 – (0.174m)(10k)
=1.56V
VD = VDS + VS = VDS=1.56V

Solution: Checking assumption;

Assume transistor operates in saturation region
DC Analysis; VDS(sat) = (VGS – VTN)
IG=0, R1 in series with R2, = (0.99 – 0.4)
𝑅2 60𝑘 = 0.59V
𝑉𝐺 = 𝑉𝐷𝐷 = 3.3 = 0.99𝑉
𝑅1 + 𝑅2 140𝑘 + 60𝑘
Since VDS(1.56V) ≥ VDS(sat)(0.59V) → The analysis is valid
VG = VGS+ VS = VGS (Vs=0) that the NMOS transistor operates in saturation region.

27
AC Analysis (Small signal analysis); Voltage Gain, Av;
𝑣𝑜 −𝑔𝑚 𝑣𝑔𝑠 𝑟𝑜 ∥𝑅𝐷 𝑅𝑖
𝐴𝑣 = = e
Small signal parameters; 𝑣𝑖 𝑣𝑔𝑠 𝑅𝑖+𝑅𝑆𝑖

𝑔𝑚 = 2 𝐾𝑛 𝐼𝐷𝑄 =2 0.5𝑚 0.174𝑚 = 0.59𝑚A/V2 −𝑔𝑚 𝑟𝑜 ∥ 𝑅𝐷 𝑅𝑖

𝐴𝑣 =
𝑅𝑖 + 𝑅𝑆𝑖
1 1
𝑟𝑜 = = = 287𝑘Ω (from λ = 0.02 V−1) − 0.59𝑚 9.66𝑘 42𝑘
𝜆𝐼𝐷𝑄 0.02 0.174𝑚
𝐴𝑣 =
42𝑘 + 4𝑘
AC Equivalent Circuit
= - 5.2038

Since there is Rsi,

𝑅𝑖 42𝑘
𝑣𝑔𝑠 = 𝑣𝑖 = 𝑣 = 91.3%𝑣𝑖
𝑅𝑖 + 𝑅𝑆𝑖 42𝑘 + 4𝑘 𝑖

Ri = R1//R2 = 140k//60k = 42kΩ → 91.3% of vi goes into amplifier

Ro = ro//RD= 287k//10k = 9.66kΩ
Vo = - gmVgs (ro//RD)
𝑅𝑖 𝑣𝑔𝑠 𝑅𝑖 + 𝑅𝑆𝑖
𝑣𝑔𝑠 = 𝑣 𝑣𝑖 =
𝑅𝑖 + 𝑅𝑆𝑖 𝑖 𝑅𝑖
28
 Design Example
Objective: Design the bias of a MOSFET
circuit such that the Q-point is in the middle of
the saturation region. Determine the resulting
small-signal voltage gain.
Specifications:
The circuit to be designed has the
configuration shown. Let R1||R2 = 100 kΩ.
Design the circuit such that the Q-point is IDQ
= 2m A and the Q-point is in the middle of the
saturation region.
Choices: A transistor with nominal parameters
VTN = 1 V, kn’ = 80 μA/V2, W/L = 25, and λ =
0.015V−1 is available.
kn’ = 80 μA/V2=0.08mA/V2

29
Solution for design question: Determine VGS then R1;
Conducting parameters; IDQ = KN(VGSQ – VTN)2
𝐾𝑛′ 𝑊 0.08 2m = 1m(VGSQ – 1)2
𝐾𝑛 = ∙ = 25 = 1𝑚𝐴/𝑉 2
2 𝐿 2 VGSQ – 1 = √2
VGSQ = 2.4142V
Assume the transistor in saturation at transition
point 𝑅2 𝑅1 1 𝑅1 𝑅2
𝑉𝐺𝑆𝑄 = 𝑉 ∙ = 𝑉
IDQt = 4 = KN(VGSt – VTN)2 𝑅1 + 𝑅2 𝐷𝐷 𝑅1 𝑅1 𝑅1 + 𝑅2 𝐷𝐷
4 = 1m(VGSt – 1)2 𝑅𝑖 100𝑘 12
VGSt = 2+1= 2V 𝑉𝐺𝑆𝑄 = 𝑉𝐷𝐷 = = 2.41𝑉
𝑅1 𝑅1
100𝑘 12
If the Q-point is the middle of saturation region, then 𝑅1 = = 498𝑘Ω
2.41
VDSQ=7V To find R2,
𝑉𝐷𝐷 + 𝑉𝐷𝑆𝑡(𝑠𝑎𝑡) 12 + 2
𝑉𝐷𝑆𝑄 = = = 7𝑉 𝑅2
2 2 𝑉𝐺𝑆𝑄 = 𝑉
𝑅1 + 𝑅2 𝐷𝐷
VDSQ = VDD – IDRD
𝑅2
2.41 = 12 R2 = 125.13k 𝜴
𝑉𝐷𝐷 − 𝑉𝐷𝑆𝑄 12 − 7 498𝑘 + 𝑅2
𝑅𝐷 = = = 2.5𝑘Ω
𝐼𝐷 2𝑚
→ R1 = 498kΩ and R2 = 125.13kΩ 30
31
AC Analysis (Small signal analysis); To find voltage gain, Av;

The small signal transconductance parameters; Vo = - gmVgs (ro//RD)

𝑔𝑚 = 2 𝐾𝑛 𝐼𝐷𝑄 =2 1𝑚 2𝑚 = 2.83𝑚A/V2 vi = vgs
1 1 𝑣𝑜 −𝑔𝑚 𝑣𝑔𝑠 𝑟𝑜 ∥ 𝑅𝐷
𝑟𝑜 = = = 33.33𝑘Ω (from λ = 0.015 V−1) 𝐴𝑣 = =
𝜆𝐼𝐷𝑄 0.015 2𝑚 𝑣𝑖 𝑣𝑔𝑠
= −𝑔𝑚 𝑟𝑜 ∥ 𝑅𝐷
AC Equivalent Circuit = −2.83𝑚 2.33𝑘
= −𝟔. 𝟓𝟖

Ri = R1//R2 = 498k//125.13k = 100kΩ

Ro = ro//RD= 33.33k//2.5k = 2.33kΩ

32
Common-Source Amplifier with Source
Resistor, Rs
A source resistor RS tends to stabilize the Q-
point against variations in transistor
parameters.
If, for example, the value of the conduction
parameter varies from one transistor to
another, the Q-point will not vary as much if a
source resistor is included in the circuit.
However, the source resistor also reduces the
signal gain.

33
Example: Common-Source Amplifier with
Source Resistor, Rs
• Determine the small-signal voltage gain of a PMOS
transistor circuit.
• The transistor parameters are:
Kp = 0.80 mA/V2, VTP = −0.5 V, and λ = 0. The quiescent
drain current is found to be IDQ = 0.297 mA.

Solution:
The small signal transconductance parameters;

𝑔𝑚 = 2 𝐾𝑝 𝐼𝐷𝑄 =2 0.8𝑚 0.297𝑚 = 0.975𝑚A/V2

1
λ = 0 V−1, ro = =∞
λ

34
AC Equivalent Circuit

Voltage Gain
KVL at output
Vo = gmvsgRD 𝑣𝑜 𝑔𝑚 𝑣𝑠𝑔 𝑅𝐷
𝐴𝑣 = =
𝑣𝑖 −𝑣𝑠𝑔 1 + 𝑔𝑚 𝑅𝑆
KVL at input 𝑔𝑚 𝑅𝐷
=−
Vi = -Vsg - gmVsgRS 1+𝑔𝑚 𝑅𝑆
0.975𝑚 10𝑘
Vi = -Vsg (1 +gmRS) = − 1+ 0.975𝑚 3𝑘
= −𝟐. 𝟒𝟖𝟒

35
Common-Source Amplifier with Source
Resistor and Bypass Capacitor
• A source bypass capacitor added to the common-
source circuit with a source resistor will minimize
the loss in the small-signal voltage gain, while
maintaining the Q-point stability.
• If the signal frequency is sufficiently large so that the
bypass capacitor acts essentially as an ac short-
circuit, the source will be held at signal ground.
• In fact, the Q-point stability can be further increased
by replacing the source resistor with a constant
current source. The bypass capacitor will simply
short it out in ac analysis.

36
Example: Common-Source Amplifier with Source
Resistor and Bypass Capacitor
Determine the small-signal voltage gain of a circuit
biased with a constant current source and
incorporating a source bypass capacitor.

Given Kn = 1m A/V2
VTN = 0.8 V

37
Solution: DC Analysis
Since the dc gate current is zero (IG=0), the dc
voltage at the source terminal is Vs= -VGSQ, and the
gate-to source voltage, (VGSQ) is determined from

IDQ = IQ = KN(VGSQ – VTN)2 or

0.5m = (1m)(VGSQ – 0.8)2
(VGSQ – 0.8) = √(0.5m
VGSQ = – VS = 1.51V
VS = - VGSQ = - 1.51V

The quiescent drain-to-source voltage is

VDSQ = VDD - IDRD – VS
= 5 – (0.5m)(7k) – (-1.51)
= 3.01V

Checking the assumption

VDS(sat) = (VGS – VTN)
= (-1.51 – 0.8)
= -2.31 V
Since VDS≥ VDS(sat), assumption that the transistor
operates in saturation is verified.
38
Transconductance parameters, AC Equivalent circuit
Given Kn = 1m A/V2
𝑔𝑚 = 2 𝐾𝑛 𝐼𝐷𝑄
=2 1𝑚 0.5𝑚
= 1.4142𝑚A/V2

AC Analysis

KVL at output
Vo = - gmvgsRD

KVL at input
Vi = Vgs

Voltage Gain,
𝑣𝑜 𝑔𝑚 𝑣𝑔𝑠 𝑅𝐷
𝐴𝑣 = =
𝑣𝑖 −𝑣𝑔𝑠
= −𝑔𝑚 𝑅𝐷
= − 1.4142𝑚 7𝑘
= −𝟗. 𝟗
39
Exercise:
The common-source amplifier has
transistor parameters kp’ = 40 μA/V2,
W/L = 40, VTP = -0.4V, and λ = 0.02V−1
(a) Determine IDQ and VSDQ.
(b) Find the small-signal voltage gain.

Answer:
(a) IDQ = 1.16mA, VSDQ=2.29V
(b) AV = - 3.68
40
 End of
MOSFET AC Analysis

42