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Chapter 9

Uploaded by

Huy Ho
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© © All Rights Reserved
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5 views

Chapter 9

Uploaded by

Huy Ho
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 13

Chapter 9: FET Amplifiers And

Switching Circuits

9-1: The Common Source Amplifier (CS Amplifier)


FET has an important advantage compared to the BJT due to the FET’s
extremely high input impedance. Disadvantages, however, include higher
distortion and lower gain. The common-source (CS) amplifier
iscomparable to the common-emitter BJT amplifier that you studied in
Chapter 6.
FET AC Model: the ac model for FET is shown below
rgs' is the gate source internal resistance
g mVgs is the current appear between drain and source
rds' is the internal drain - to - source resistance

Since is very large and is


also large Æ they can be neglected
Æ Simplified model

1
9-1: The Common Source Amplifier
FET AC Model
An ideal ac circuit model with ac drain
resistance Rd can be represented as
shown.

The voltage gain for the circuit shown is

Vout Vds but


Av = = From definition of
Vin Vgs
and transconductance

Ex: for a JFET with gm = 4mS


and Rd = 1.5kΩ
Æideal voltage gain is
Av= gmRd = (4mS)(1.5k Ω) = 6

9-1: The Common Source Amplifier


JFET Amplifier Operation
In common source self biased amplifier, Vin is applied to the gate and Vout is
taken from the drain as shown with phase difference between them 180°

Remember that, for ac signal, capacitors are short and VDD is ac ground Æ
source terminal S and RD are connected to the round in ac equivalent circuit

2
9-1: The Common Source Amplifier
JFET Amplifier Operation: A Graphical Picture
the operation of n-channel JFET shown above with Vin and Vout on ID
characteristic curve and on transfer characteristic curve is shown below

As Vgs varies Æ Id varies; As Vgs decrease (more negative) from Q-point


Æ Id decreases and As Vgs increase Æ Id increases. The corresponding
change in Vds show the inverse (because VD = VDD-IDRD).

9-1: The Common Source Amplifier


JFET Amplifier Operation: DC Analysis
From the DC equivalent circuit of the amplifier, the Q-point can be found
graphically as described before in chapter 8 for the self biased transistor
Æ Once finding ID you can find VD

3
9-1: The Common Source Amplifier
JFET Amplifier Operation: DC Analysis: Example

Draw the load line from the two points first point (ID=0 and
VGS = 0 ) and the second point ID = IDSS and VGS = -IDRS

Î From graph at Q-point,


ID = 2.2 mA and VGS = -2.4 V

9-1: The Common Source Amplifier


JFET Amplifier Operation: AC Analysis
The ac equivalent circuit can be drawn

The amplifier circuit Ac equivalent circuit Ac equivalent circuit


showing Vin and Vout
Input resistance Output resistance Voltage gain
Rout = Rd
Vout Vds
with no RL Æ Av = = = g m Rd
Rd = RD Vin Vgs
Very small
With load RL Æ
Rd = RD//RL

4
9-1: The Common Source Amplifier
JFET Amplifier Operation: AC Analysis - Example

Voltage gain with load < voltage gain without load

9-1: The Common Source Amplifier


JFET Amplifier Operation: AC Analysis - Example

Æ Rin ≈ RG

5
9-1: The Common Source Amplifier
D-MOSFET Amplifier Operation:
„ A zero-biased common-source amplifier for
n-channel D-MOSFET is shown.
„ VGS = 0 Æ The signal voltage causes Vgs
to swing above and below its zero value,
producing a swing in Id above and below
Q-point, as shown on characteristic
transfer curve
When Vgs < 0 Æ the depletion mode, and Id decreases. When
Vgs > 0 Æ the enhancement mode, and Id increases
At VGS = 0 Æ ID = IDSS
Æ VD = VDS can be calculated

The ac analysis is the same as for the JFET amplifier.

9-1: The Common Source Amplifier


E-MOSFET Amplifier Operation:
„ A voltage divider common-source amplifier
for n-channel E-MOSFET is shown.
„ The gate is biased with a positive
voltage such that VGS > VGS(th)

„ Dc analysis

„ Ac analysis
where

„ Voltage gain is same as for JFET


Vout Vds
Av = = = g m Rd
Vin Vgs

6
9-1: The Common Source Amplifier
E-MOSFET Amplifier Operation: Example

9-2: The Common Drain Amplifier (CD Amplifier) or source follower


„ In a CD amplifier, the input signal is applied
to the gate and the output signal is taken from
the source. There is no drain resistor, because
it is common to the input and output signals.
„ The voltage gain is
Vout Vs I d Rs g mVgs Rs
Av = = = =
Vin Vgs + Vs Vgs + I d Rs Vgs + g mVgs Rs

Input Resistance

where Ac equivalent circuit

7
9-2: The Common Drain Amplifier
Example
Determine the voltage gain and the input resistance of the amplifier in
Figure 9–20. VDD is negative because it is a p-channel device. From data
sheet gm = yfs = 1000µS, IGSS = 5 nA (maximum) at VGS = 20 V.

9-3: The Common Gate Amplifier (CG Amplifier)


„ In a CG amplifier, the input signal is applied
to the source and the output signal is taken
from the drain.
„ The voltage gain is
Vout Vd I d Rd g mVgs Rd
Av = = = =
Vin Vgs Vgs Vgs

Input Resistance

8
9-3: The Common Gate Amplifier (CG Amplifier)
Example

9-3: The Common Gate Amplifier (CG Amplifier)


The Cascode Amplifier
„ A cascode amplifier is one in which a common-source amplifier and a
common-gate amplifier are connected in a series arrangement as shown
below. As noted from figure, the input resistance (1/gm) for CG amplifier
represent the drain resistance Rd for CS amplifier

„ The cascode amplifier using JFETs


provides a very high input resistance and
significantly reduces capacitive effects to
allow for operation at much higher
frequencies, used for RF (radio frequency),
than a common-source amplifier alone
The voltage gain

Where XL is the reactance of the inductor L shown

with gm(CS) ≈ gm(CG)

9
9-5: MOSFET Analogue Switching
MOSFETs are widely used in analog and digital switching applications.
Generally, they exhibit very low on-resistance, very high off-resistance,
and fast switching times.
MOSFET Switching Operation
„ E-MOSFETs are generally used for switching applications:
„ When VGS < VGS(th) Æ MOSFET is off Æ very high RDS
„ When VGS > VGS(th) Æ MOSFET is on Æ very low RDS (VGS must be
sufficiently higher than VGS(th) to be in the upper end of load line in the
Ohmic region)

9-5: MOSFET Analogue Switching


MOSFET Switching Operation

„ n-channel E-MOSFET
operation as a switch
VGS is +V Æ switch on
VGS is 0 Æ switch off

„ p-channel E-MOSFET
operation as a switch
VGS is 0 Æ switch on
VGS is +V Æ switch off

10
9-5: MOSFET Analogue Switching
The analogue switch
„ A basic n-channel MOSFET analog switch is shown in the figure. The
signal at the drain is connected to the source when the MOSFET is turned
on by a positive VGS and is disconnected when VGS is 0, as indicated.

„ Variable voltage at the source cause


variation in VGS Æ VGS must be ≥ VGS(th) to
keep MOSFET maintain conduction (on).
Minimum VGS voltage occurs at –ve peak
voltage of the output (Vp(out))Æ

9-5: MOSFET Analogue Switching


The analogue switch: Example

11
9-5: MOSFET Analogue Switching
The analogue switch: some applications
„ Sampling circuit:
analogue to digital
conversion

„ Analogue multiplexer: two or


more signals are to be
routed to the same output

„ Switched-Capacitor
Circuit: where switch
MOSFETs with a
capacitor can be used to
replace a resistor

9-5: MOSFET Digital Switching


MOSFETs are also used in switching applications in digital integrated
circuits
CMOS (Complementary MOS)
CMOS combines n-channel and/or p-channel E-MOSFETs in a series
arrangement. The shown figure represent a logic Inverter Gate
CMOS inverter
operation
Vin Vout
0 1
1 0

a) Vin can be 0 or 1 b) Vin = 0 Æ Q1 on and c) Vin = +VDD Æ Q1 off


(+VDD) Æ Vout is the Q2 off Æ Vout = +VDD and Q2 on Æ Vout = 0
inverse

12
9-5: MOSFET Digital Switching
CMOS (Complementary MOS): NAND Gate and NOR Gate

„ NAND Gate:
When VA AND
VB are high,
the output is
low; otherwise,
the output is
high.

„ NOR Gate:
When VA OR VB
OR both are
high, the output
is low;
otherwise, the
output is high.

13

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