V ELTECH

DR.RR&DR.SR TECHINCAL
UNIVERSITY
LAB MANUAL

SEMICONDUCTOR DEVICES
LIST OF EXPERIMENTS
1.Input and output characteristics of BJT for all Configurations
2.To find out the drain resistance and transconductance of JFET
3.to find gthe scr characteristics and its parameters
4.to find the intrinsic standoff ratioof ujt
5.to de
EX.NO:3 CHARACTERISTICS OF JFET

AIM:To draw the drain and transfer characteristics of JFET.

APPARATUS
1. JFET BFW10
2. Voltmeter (0-39)v,(0-10)v
3. Ammeter (0-50)ma
4. DCPS
5. Bread board
6. Connecting wires

THEORY:

CHARACTERISTICS OF JFETS

There are two types of static characteristics viz

(1) Output or drain characteristic and

(2) Transfer characteristic.

1. Output or Drain Characteristic. The curve drawn between drain current

Ip and drain-source voltage VDS with gate-to source voltage VGS as the parameter
is called the drain or output characteristic. This characteristic is analogous to
collector characteristic of a BJT:
 JFET-Drain Characteristics With External Bias

Drain Characteristics With External Bias: The circuit diagram for determining

the drain characteristics with different values of external bias is shown in figure.
and a family of drain characteristics for different values of gate-source voltage
VGS is given in next figure

It is observed that as the negative gate bias voltage is increased

(1) The maximum saturation drain current becomes smaller because the
conducting channel now becomes narrower.

(2) Pinch-off voltage is reached at a lower value of drain current I D than when
VGS = 0. When an external bias of, say – 1 V is applied between the gate and the
source, the gate-channel junctions are reverse-biased even when drain current,
ID is zero. Hence the depletion regions are already penetrating the channel to a
certain extent when drain-| source voltage, VDS is zero. Due to this reason, a
smaller voltage drop along the channel (i.e. smaller than that for VGS = 0) will
increase the depletion regions to the point where 1 they pinch-off the current.
Consequently, the pinch-off voltage VP is reached at a lower 1 drain current,
ID when VGS = 0.

(3) The ohmic region portion decreases.

(4) Value of drain-source voltage VDS for the avalanche breakdown of the gate

junction is reduced.

Value of drain-source voltage, VDS for breakdown with the increase in negative

bias voltage is reduced simply due to the fact that gate-source voltage,
VGS keeps adding to the I reverse bias at the junction produced by current flow.
Thus the maximum value of VDS I that can be applied to a FET is the lowest voltage which causes avalanche
breakdown. It is also observed that with VGS = 0, ID saturates at IDSS and the characteristic shows VP = 4 V. When an external bias of –

1 V is applied, the gate-channel junctions still require -4 V to achieve pinch-off. It means that a 3 V drop is now required along the

channel instead of the previous 4.0 V. Obviously, this drop of 3 V can be achieved with a lowervalue of drain current, Similarly when

VGS = – 2 V and – 3 V, pinch-off is achieved with 2 V and 1 V respectively, along the channel. These drops of 2 V and 1 V are, of

course, achieved with further reduced values of drain current, ID. It is further observed that when the gate-source bias is numerically equal

to pinch-off voltage, VP (-4 V in this case), no channel drop is required and, therefore, drain current, ID is zero. The gate-source

bias voltage required to reduce drain current, ID to zero is designated the gate-source cut-off voltage, VGS /0FF) and, as explained,

Hence for working of JFET in the pinch-off or active region it is necessary that

the following conditions be fulfilled.

VP < VDS < VDS (max)

VGS (OFF) < VGS < 0

0 < ID < IDSS

jfet-transfer-characteristic
2. Transfer Characteristic of JFET

The transfer characteristic for a JFET can be determined experimentally,

keeping drain-source voltage, VDS constant and determining drain current, ID for
various values of gate-source voltage, VGS. The circuit diagram is shown in fig.
9.7 (a). The curve is plotted between gate-source voltage, V GS and drain current,
ID, as illustrated in fig. 9.8. It is similar to the transconductance characteristic of
a vacuum tube or a transistor. It is observed that

(i) Drain current decreases with the increase in negative gate-source bias

(ii) Drain current, ID = IDSS when VGS = 0

(iii) Drain current, ID = 0 when VGS = VD The transfer characteristic follows

equation (9.1)

The transfer characteristic can also be derived from the drain characteristic by
noting values of drain current, ID corresponding to various values of gate-source
voltage, VGS for a constant drain-source voltage and plotting them.

It may be noted that a P-channel JFET operates in the same way and have the
similar characteristics as an N-channel JFET except that channel carriers are
holes instead of electrons and the polarities of VGS and VDS are reversed.

Tabular form
Drain resistance:

Vgs= Vgs=
Vds Id Vds Id

Transconductance:

Vds=
Vgs Id

RESULT:
Thus JFET has a very high input resistance and amplification factor greater than
unity.
AIM

 To plot the characteristics of UJT and to determine the intrinsic standoff ratio from the graph.

COMPONENTS AND EQUIPMENTS REQUIRED

1. UJT

2. Resistors

3. Voltmeter

4. Ammeter

5. Rheostat

6. Power supply

CIRCUIT DIAGRAM                                                                                                        

THEORY

       UJT is the Uni Junction Transistor. It is a three terminal device. They are: a) emitter     b)
base1  c)base2.The equalent circuit is shown with the circuit diagram. So there are two resistors. One
is a variable resistor and other is a fixed resistor. The ratio of internal resistances is referred as
intrinsic standoff ratio (η).It is defined as the ratio of the variable resistance to the total resistance.
Due to the existing pn junction, there will be a voltage drop. If we apply a voltage to the emitter, the
device will not turn on until the input voltage is less than the drop across the diode plus the drop at
the variable resistance R1.When the device is turned on holes moves from emitter to base resulting in
a current flow. Due to this sudden increase in charge concentration in base1 region   conductivity
increases. This causes a drop at base1.This region in the graph is known as negative resistance region.
If we further increase the emitter voltage the device undergoes saturation. So a UJT has 3 operating
regions:

1. cut off region

2. negative resistance region
3. saturation region

PROCEDURE

 
1. Set up the circuit as shown in the circuit diagram

2. Give the power supply.

3. By varying the input voltage, take the values of voltage and current values

4. Plot the graph

5. Find the in intrinsic standoff ratio from graph.

OBSERVATIONS

               For VBB=12 V                                                           For VBB=6 V

VE IE VE IE
       

 
  

 GRAPH

CALCULATIONS

 
VBB=12 V

VP= Vd + ηvbb

Find the value of Vp from graph.

η  = Vp – Vd/VBB

Similarly find the value of intrinsic standoff ratio for all values of VBB.

RESULT
 
Characteristics of UJT were plotted and intrinsic standoff ratio was found.

η = ………………..

AIM   

To plot the characteristics of BC 107 transistor in CE and to find

1. Dynamic input resistance

2. Dynamic output resistance

3. Common emitter current gain

COMPONENTS AND EQUIPMENTS NEEDED

 

1. Transistor

2. Variable power supplies

3. Resistors

4. Voltmeters

5. Ammeters

CIRCUIT DIAGRAM
THEORY
 

         A transistor is a 3 terminal device. It can be considered as the combination of two

diodes. In a transistor there are 3 regions: 1.emitter 2.base 3.Collector. In an npn transistor the
emitter and collector are n types, and base is p type. In any transistor emitter is heavily doped,
base is lightly doped and collector is moderately doped. For the proper working of transistor
the emitter base junction should be forward biased and collector base junction should be
reverse biased. In a common emitter configuration, emitter is common to both input and
output.

          Transistor (bipolar transistor-BJT) is a current controlled device. The input

characteristics are a plot between the base current and base emitter voltage. The dynamic
input resistance can be calculated by taking the slope of the input characteristics by keeping
the output voltage constant. The output characteristics is a plot between collector current and
collector emitter voltage by keeping the input current constant..Now the common emitter
current gain ß can be calculated as a ratio between collector current and base current at a
particular value of output voltage (collector emitter voltage)

PROCEDURE
 

1. Check the components and identify the leads of transistor.

2. Keeping the rheostats at minimum position, switch on the power supplies

3. Make the voltage at collector emitter as zero and vary the rheostat at input side in small
steps

4. Do the above step for other collector –emitter voltages (eg: Vce=3 V, Vce=5 V) and
tabulate the readings.

5. Switch off the power supplies and switch on the supplies and make the input current at 40
uA.

6. By varying the rheostat at output note down the readings of ammeter and voltmeter
readings.

7. Repeat the above step, for a few number of times for various base current values
(eg:IB =60 uA)

8. Plot the graph

9. Calculate the dynamic input resistance, dynamic output resistance and common emitter
current gain.
OBSERVATIONS

1.      To plot input characteristics

For VCE=0V                               For VCE=3 V                              

IB VBE IB VBE

   

2.      To plot the output characteristics

           For IB=40 uA                             For IB=60 uA                          For IB=80 uA

Ic (mA) VCE(volts)      Ic    VCE     Ic   VCE

           

 
GRAPH

1.  INPUT CHARACTERISTICS

2.OUTPUT CHARACTERISTICS

  

CALCULATIONS

 
Dynamic input resistance= slope of input characteristics=………..
Dynamic output resistance=slope of out put characteristics=……..

Common emitter current gain=………………

RESULT

CE characteristics of an transistor were plotted    .

Dynamic input resistance=……………..

Dynamic output resistance=…………….

Common emitter current gain=…………..

 
\

AIM   

To plot the characteristics of BC 107 transistorin CB configuration to find

1. Dynamic input resistance

2. Dynamic output resistance

3. Common emitter current gain

COMPONENTS AND EQUIPMENTS NEEDED

 

1. Transistor

2. Variable power supplies

3. Resistors

4. Voltmeters

5. Ammeters

CIRCUIT DIAGRAM
THEORY
 

         A transistor is a 3 terminal device. It can be considered as the combination of two

diodes. In a transistor there are 3 regions: 1.emitter 2.base 3.Collector. In an npn transistor the
emitter and collector are n types, and base is p type. In any transistor emitter is heavily doped,
base is lightly doped and collector is moderately doped. For the proper working of transistor
the emitter base junction should be forward biased and collector base junction should be
reverse biased. In a common emitter configuration, emitter is common to both input and
output.

          Transistor (bipolar transistor-BJT) is a current controlled device. The input

characteristics are a plot between the base current and base emitter voltage. The dynamic
input resistance can be calculated by taking the slope of the input characteristics by keeping
the output voltage constant. The output characteristics is a plot between collector current and
collector emitter voltage by keeping the input current constant..Now the common emitter
current gain ß can be calculated as a ratio between collector current and base current at a
particular value of output voltage (collector emitter voltage)

PROCEDURE
 

1. Check the components and identify the leads of transistor.

2. Keeping the rheostats at minimum position, switch on the power supplies

3. Make the voltage at collector emitter as zero and vary the rheostat at input side in small
steps

4. Do the above step for other collector –emitter voltages (eg: Vce=3 V, Vce=5 V) and
tabulate the readings.

5. Switch off the power supplies and switch on the supplies and make the input current at 40
uA.

6. By varying the rheostat at output note down the readings of ammeter and voltmeter
readings.

7. Repeat the above step, for a few number of times for various base current values
(eg:IB =60 uA)

8. Plot the graph

9. Calculate the dynamic input resistance, dynamic output resistance and common emitter
current gain.
OBSERVATIONS

1.      To plot input characteristics

For VCB=0V                               For VCB=3 V                              

IE VBE IE VBE

   

2.      To plot the output characteristics

           For Ie=40 uA                             For Ie=60 uA                          For Ie=80 uA

Ic (mA) VCb(volts)      Ic    VCb     Ic   VCb

           

 
GRAPH

1.  INPUT and OUTPUT CHARACTERISTICS

2.OUTPUT CHARACTERISTICS

  

CALCULATIONS

 
Dynamic input resistance= slope of input characteristics=………..

Dynamic output resistance=slope of out put characteristics=……..

Common emitter current gain=………………

RESULT

CE characteristics of an NPN transistor were plotted    .

Dynamic input resistance=……………..

Dynamic output resistance=…………….

Common emitter current gain=…………..

 
AIM   

To plot the characteristics of BC 107 transistor in cc configuration and to find

1. Dynamic input resistance

2. Dynamic output resistance

3. Common emitter current gain

COMPONENTS AND EQUIPMENTS NEEDED

 

1. Transistor

2. Variable power supplies

3. Resistors

4. Voltmeters

5. Ammeters

CIRCUIT DIAGRAM
THEORY
 

         A transistor is a 3 terminal device. It can be considered as the combination of two

diodes. In a transistor there are 3 regions: 1.emitter 2.base 3.Collector. In an npn transistor the
emitter and collector are n types, and base is p type. In any transistor emitter is heavily doped,
base is lightly doped and collector is moderately doped. For the proper working of transistor
the emitter base junction should be forward biased and collector base junction should be
reverse biased. In a common emitter configuration, emitter is common to both input and
output.

          Transistor (bipolar transistor-BJT) is a current controlled device. The input

characteristics are a plot between the base current and base emitter voltage. The dynamic
input resistance can be calculated by taking the slope of the input characteristics by keeping
the output voltage constant. The output characteristics is a plot between collector current and
collector emitter voltage by keeping the input current constant..Now the common emitter
current gain ß can be calculated as a ratio between collector current and base current at a
particular value of output voltage (collector emitter voltage)

PROCEDURE
 

1. Check the components and identify the leads of transistor.

2. Keeping the rheostats at minimum position, switch on the power supplies

3. Make the voltage at collector emitter as zero and vary the rheostat at input side in small
steps

4. Do the above step for other collector –emitter voltages (eg: Vce=3 V, Vce=5 V) and
tabulate the readings.

5. Switch off the power supplies and switch on the supplies and make the input current at 40
uA.

6. By varying the rheostat at output note down the readings of ammeter and voltmeter
readings.

7. Repeat the above step, for a few number of times for various base current values
(eg:IB =60 uA)

8. Plot the graph

9. Calculate the dynamic input resistance, dynamic output resistance and common emitter
current gain.
OBSERVATIONS

1.      To plot input characteristics

For VcE=0V                               For VcE=3 V                              

IB VBE IB VBE

   

2.      To plot the output characteristics

           For IB=40 uA                             For IB=60 uA                          For IB=80 uA

Ie (mA) VCE(volts)      Ie    VCE     Ie   VCE

           

CALCULATIONS

 
Dynamic input resistance= slope of input characteristics=………..

Dynamic output resistance=slope of out put characteristics=……..

Common emitter current gain=………………

 

RESULT

CC characteristics of an transistor were plotted    .

Dynamic input resistance=……………..

Dynamic output resistance=…………….

Common emitter current gain=…………..

 
CHARACTERISTICS OF SCR
AIM:To draw the characteristics of SCR and to calculate gate current(IG)

COMPONENTS:
Power supply (0-30)v-2
Resistor 1KΩ-2
Ammeter (0-50) m A-2
SCR-1
Voltmeter (0-30) v -1

THEORY:
SCR acts as a switch when it is forward biased when the gate is kept open
IG=0.Operation of SCR is similar to PN diode .When IG>0, the amount of
reverse
Bias applied.I2 decreased very low voltage such that the characteristics of SCR
is similar
to that of of ordinary PN diode.
Once the SCR is turned ON , the gate loses control the gate cannot be used to
switch the device off.

PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Power supply and voltage to gate is increased to make the voltmeter reading
zero.
3. The voltmeter is used to get supply and it is increased
4. The corresponding voltmeter and ammeter readings are noted.
5. A graph is plotted by taking voltage along x-axis and current along Y- axis.

CIRCUIT
TABULAR FORM
Vg=
IC Vak

Result:
Thus the firing characteristics of SCR and the calculations of gate current are
studied.