Small-Signal Modeling and Linear Amplification
Small-Signal Modeling and Linear Amplification
Small-Signal Modeling and Linear Amplification
Chapter Goals
Understanding of concepts related to:
Transistors as linear amplifiers
dc and ac equivalent circuits
Use of coupling and bypass capacitors to modify dc and ac equivalent
circuits
Small-signal voltages and currents
Small-signal models for diodes and transistors
Identification of common-emitter amplifiers
Amplifier characteristics such as voltage gain, input and output
resistances and linear signal range
Rule-of-thumb estimates for voltage gain of common-emitter
amplifiers.
Introduction to Amplifiers
The BJT is biased in the forward active region by dc voltage sources VBE
and VCC = 10 V. The DC Q-point is set at, (VCE, IC) = (5 V, 1.5 mA) with IB
= 15 A.
Total base-emitter voltage is: vBE VBE vbe
Collector-emitter voltage is:
v 10 i R
CE
C C
v
ce 1.65180 206180 206
0.0080
be
A change in iB and a 0.5 mA change in
iC.
The minus sign indicates a 1800
The 0.5 mA change in iC gives a 1.65 V phase shift between input and
output signals.
change in vCE .
The MOSFET is biased in the saturation region by dc voltage sources VGS and
VDS = 10 V. The DC Q-point is set at (VDS, IDS) = (4.8 V, 1.56 mA) with VGS = 3.5
V.
Total gate-source voltage is: vGS VGS vgs
A 1 V p-p change in vGS gives a 1.25 mA p-p change in iDS and a 4 V p-p change
in vDS. Notice the characteristic non-linear I/O relationship compared to the BJT.
DC Equivalent Circuit
The coupling and bypass capacitors are replaced by short circuits. The DC
voltage supplies are replaced with short circuits, which in this case connect
to ground.
Transconductance:
I
gm C 40I
C
V
T
Input resistance:
oV
T o
r
I
gm
C
Output resistance:
V V
ro A CE
I
C
v ce
F
,v ce ro gm v be
v be
F
1 I
C i
F
C
Q po int
o gmr
I V V
V V
gmro C A CE A CE
F
V
I
V
T
C
T
V
Choose the Q-point at about (5 V, 5 mA) for this analysis. Notice the slope of the
DC current gain characteristic in this region. Ideally, the slope would be zero.
1 I
C i
F C Q po int
o gmr
F 200100 5.6x103
2 103
I
10
C
1 I
C I
F
C Q po int
at about IC = 5 mA and 25 C
180
180
o
212
5.6x10 3
1 0.15
3
1 5x10
180
for F = 180
be
BE
I
exp
exp
c
C
C
S
V
V
T
T
2
3
v
1
1
I 1 be be be ...
C V
2 V
6 V
T
T
T
2
3
v
1
1
be
be
be
ic i I I
...
C C C V
2 V
6 V
T
T
T
BE
i I exp
C S
V
I
be
C v g v
ic I
v 2V 50mV
C V V be m be for
T
be
T
T
If we limit vbe to 5 mV, the relative change in ic compared to IC that
0.200
corresponds to small-signal operation is:
I
I
V
0.025
C
C
T
v R r
i B
v
be R R r
I B
R ro R R
L
C 3
B
R R r
I
B
1
1
CapacitiveReactanceXc Z c
where 2f
jC
C
gm v
But vbe=0.
be
R
ro
C
vx
Rout
R ro R
C
C
ix
since ro is usually >> RC.
P V I I whereI I I
S CC C 2
2 1 B
V
V
V
EQ
BE
I CC andI
1 R R
B R
1 R
1 2
EQ F E