Chapter 8:Field Effect

Transistors (FET’s)

The FET
„ The idea for a field-effect transistor (FET) was first
proposed by Julius Lilienthal, a physicist and inventor. In
1930 he was granted a U.S. patent for the device.

„ His ideas were later

refined and developed into
the FET. Materials were not
available at the time to build
his device. A practical FET
was not constructed until the
1950’s. Today FETs are the
most widely used
components in integrated
circuits.

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 8-1: The Junction Field Effect Transistor (JFET)
Basic Structure
„ The JFET ( junction field-effect transistor) is a type of FET that
operates with a reverse-biased pn junction to control current in a
channel.
„ JFETs has two categories, n channel or p channel.
„ For n-channel JFET shown; the
drain (D) is at the upper end, and
the source (D) is at the lower end.
Two p-type regions are diffused in
the n-type material to form a
channel, and both p-type regions
are connected to the gate (G) lead.
„ for p-channel, the gate is
connected to n-type regions forming
basic structure of the two
the channel into the p-type material types of JFET.

8-1: The Junction Field Effect Transistor (JFET)

Basic Operation

„ Biasing of JFET is shown in the figure

„ VDD provide drain-to-source voltage Æ
current flow from drain to source
„ VGG sets the reverse bias between the gate
and the source Æ sets the depletion region
along the pn junction Æ restricting channel
width Æ increase channel resistance

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 8-1: The Junction Field Effect Transistor (JFET)
Basic Operation
Depletion
„ By varying the gate voltage (VGG) region
Æincreasing –ve voltage between G and S
Æ varying the channel width Æ controlling
the amount of drain current (ID); As VGG
increase Æ depletion region increase Æ
channel decrease Æ higher resistance Æ
lower current

„ The schematic symbols for

both n-channel and p-channel
JFETs are shown in the adjacent
figure; the arrow on the gate
points “in” for n channel and
“out” for p channel.

8-2: JFET Characteristics And Parameters

The JFET operates as a voltage-controlled, constant-current device
Drain characteristic curve
„ If you set the gate-to-source voltage to be zero (VGS = 0) by shorting gate-
to-source as shown Æ as VDD increase, ID increase and thus VDS increase
(Ohmic region between A and B Æ constant R between D and G).
„ At point B (at VDS = pinch-off-voltage - Vp) Æ current ID becomes
constant (active region between B and C); this is due to reverse bias voltage
from gate-to-drain VGD which prevent any further increase in ID with
increasing VDS
„ at point C where ID rapidly increase Æ
breakdown region Æ JFET may damage

max. drain
current for
given JFET.
It is usually
specified at
VGS = 0

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 8-2: JFET Characteristics And Parameters
Drain characteristic curve
„ When VGS is set to different values, the relationship between VDS and ID
develops a family of characteristic curves for the device (figure below).
„ The figure shows the more negative VGS is, the smaller ID (constant
smaller current begins at pinch-off ) becomes in the active region.
„ When VGS has a sufficiently large negative value, ID is reduced to
zero Æ VGS = VGS(off) (cut off voltage). This cutoff effect is caused by
the widening of the depletion region to a point where it completely
closes the channel
„ Note that pinch
off is different
than pinch off
voltage measured
when VGS = 0

Vp is positive and has the

same magnitude as VGS(off).

8-2: JFET Characteristics And Parameters

Example:

from KVL

If VDD increases to 15 V Æ VDS will increase. But ID will remain the same

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 8-2: JFET Characteristics And Parameters
JFET Universal Transfer Characteristic
„ Because VGS control the drain current ID Æ a plot of the output current (ID)
to the input voltage (VGS), called the transfer or transconductance curve, can
be drawn:

general transfer characteristic curve

between VGS and ID

8-2: JFET Characteristics And Parameters

JFET Universal Transfer Characteristic
„ The transfer characteristic curve can also be developed from the drain
characteristic curves by plotting values of ID for the values of VGS taken
from the family of drain curves at pinch-off (at different constant drain
currents).
„ for different VGS, JFET ID’s can be mathematically expressed by

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 8-2: JFET Characteristics And Parameters
Example:

8-2: JFET Characteristics And Parameters

JFET Forward Transconductance
„ The transconductance (transfer conductance), gm (or gfs or yfs- forward
transfer admittance), is an important factor in determining the voltage gain
of a FET amplifier as you will see later. gm is the ratio of a change in output
current (∆ID) to a change in the input voltage (∆VGS):

has the unit of siemens (S).

„ As VGS increase Æ resistance increase Æ conductance

decrease Æ gm has its highest value (gm0) at VGS = 0 as
shown in the figure for given ∆VGS
„ At given VGS, gm can be calculated using

where

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 8-2: JFET Characteristics And Parameters
JFET Forward Transconductance: Example:
for a 2N5457 JFET: typically, IDSS = 3.0 mA, VGS(off) = -6V maximum, and
gfs(max) = 5000 mS. Using these values, determine the forward
transconductance for VGS = -4V, and find ID at this point.

8-2: JFET Characteristics And Parameters

Input Resistance and Capacitance
„ Input resistance (RIN) of the JFET is the resistance of the reverse-biased
gate-source junction Æ At given VGS with reverse gate-source current IGSS

See Example 8-5

„ For JFET, RIN is usually very high and decrease with temperature, T,
since IGSS increases with T.
„ The input capacitance, Ciss, is a result of the JFET operating with a
reverse-biased (depletion layer act as a capacitor in reverse biase)
AC Drain-to-Source Resistance
„ above the pinch off, ID is relatively constant; Only small change in ID
occurs over a wide range of VDS Æ we have ac drain-to-source resistance

Datasheets specify this parameter as output conductance,

gos, or output admittance, yos, for VGS = 0 V.

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 8-3: JFET Biasing
We can use the JFET parameters discussed to properly bias the JFET by dc
voltage (VGS) and determine a proper Q-point. Three types of bias are self-
bias, voltage-divider bias, and current-source bias.
a - Self-Bias
„ JFET must be operated such that the gate-source junction is always
reverse-biased. Æ-ve VGS for an n-channel JFET and a +ve VGS for a p-
channel JFET. This can be achieved using the self-bias arrangements shown
„ Self-bias is simple and effective, so it is the most common biasing method
for JFETs. With self bias, the gate is essentially at 0 V.

„ For n-channel, RS is added to makes the

source positive with respect to ground (IS
produce a voltage drop across RS)Æ RS
develops the necessary reverse bias that
forces the gate voltage (VG = 0; IG = 0) to
be less than the source.
„ the inverse is for p-channel

8-3: JFET Biasing

a - Self-Bias: Setting the Q-point
„ The gate to source voltage is

Since IS = IG + ID = 0 + ID = ID
Reverse current; ideally = 0

VGS Which can be found for certain Q-point (certain

⇒ RS = VGS and ID) as shown for the given
ID
transconductance curve.

For the shown curve, the value of RS to self bias JFET at VGS
= -5V is

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 8-3: JFET Biasing
a - Self-Bias: Setting the Q-point
„ It is usually preferable to bias the JFET near the mid point of it’s
transfer curve (at ID = IDSS/2 and VD = VDD/2) Æ midpoint bias
allows the maximum amount of drain current swing between IDSS
and 0 when there is an ac signal applied to JFET.

Using

and substitute for ID = IDSS/2 Æ VGS = VGS(off)/3.4 ≈ 0.3VGS(off)

To set the drain voltage at midpoint

(VD = VDD /2), select a value of RD
to produce the desired voltage drop.

8-3: JFET Biasing

a - Self-Bias: Setting the Q-point: Example
select resistor values for RD and RS in Figure to set up an
approximate midpoint bias.

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 8-3: JFET Biasing
a - Self-Bias: Setting the Q-point
„ Indeed, for a given circuit, you can use the transfer curve of
a JFET and certain parameters to determine the Q-point (ID
and VGS) of a self-biased circuit. For shown circuit with shown
transfer curve, the Q-point can be determined by:
a) Draw the transfer curve
b) calculate VGS when ID is zero.

Setting the first point ID=0 and VGS = 0 - origin point

(c) calculate VGS when ID = IDSS

Setting the second point ID = IDSS and VGS = -IDRS

(d) Connect between the two points on the
curve by a line (dc load line)Æ the intercept
of the line with transfer curve is the Q-point
„ stability of Q-point can be increased by increasing RS and connect
it to a negative bias voltage Æ dual supply bias

8-3: JFET Biasing

b - Voltage-Divider Bias and the Q-point
Voltage-divider biasing shown is a combination of a
voltage-divider and a source resistor to keep the source
more positive than the gate Æ gate-source junction is
reverse biased. The dc voltages (determining the Q-point)
can be found by as followed:

Source voltage is

and by voltage divider, gate voltage is

The gate-source voltage then is

Æ
The drain current or Note that ID = IS

Drain current can also be calculated if you know VD Æ

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 8-3: JFET Biasing
b - Voltage-Divider Bias: Example

„ In this example, If VD had not been given, the

Q-point values could not have been found
without the transfer characteristic curve.

8-3: JFET Biasing

b - Voltage-Divider Bias and the Q-point
„ Q-point can also be graphically determine the Q-point of a
circuit on the transfer characteristic curve as followed:
a) Draw the transfer curve
b) calculate VGS when ID is zero.

Setting the first point ID = 0 and VGS = VG

c) For VGS = 0

Setting the second point VGS = 0 and

ID = VG/RS

(d) Draw the voltage divider dc load line

between the two points Æ the intercept of
the line with transfer curve is the Q-point

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 8-3: JFET Biasing
c – Current Source Bias –stability of Q-point
„ Unfortunately, the transfer characteristic of a JFET can differ very
much from one device to another of the same type.
„ For example for two devices of 2N5459 JFET, you may have two different
IDSS and VGS(off) as shown on self biase transfere curve Æ the Q-point could
be any value between the minimum Q1 and maximum Q2 Ænot fixed ID and
VGS for given device number Æ since ID is not stable means the Q-point is
not stable.

8-3: JFET Biasing

c – Current Source Bias –stability of Q-point
„ Indeed, stability of Q-point in self biased JFET can be increased by
providing a given constant ID through adding a constant current source
in series with JFET as shown
„ The current-source can be either a
BJT or another FET. With current-
source biasing, the drain current, ID,
is constant ≈ IE and is essentially
independent of VGS.
The emitter current

but

Constant current
source

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 8-3: JFET Biasing
c – Current Source Bias –stability of Q-point
„ Also the Q-point in voltage divider bias for devices of same type is
consider to be more stable because the slope of voltage divider dc load
line is less than that in self bias JFET as shown. But still we can add
constant current source to guarantee the stability

8-3: JFET Biasing

c – Current Source Bias: Example

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 8-4: The Ohmic region
The ohmic region is the portion of the FET characteristic curves
(shown in figure) in which Ohm’s law can be applied. When
properly biased in the ohmic region, a JFET exhibits the properties
of a variable resistance, where the value of resistance between drain
and source (RDS) is controlled by VGS.

Biasing the JFET in the

ohmic region (determining
the dc load line that
intersect the characteristic
curve) can be done by
setting the saturation drain
current ( ID(sat) ), where
ID(sat) << IDSS Æ the load
line intersect most of the Ohmic region is the region extended from
curves in the ohmic region the origin to the active region (pinch off) of
ID characteristic curves

8-4: The Ohmic region

The dc load line in the ohmic region for
given circuit can be drawn as follows:

a)
This set the first point at VDS = 0 and ID(sat)
b) At VDS = VDD when ID = 0, we can set
the second point
The load line connecting the
two points intercept (at Q0, Q1,
Q2) most curves in the ohmic
region as show.

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 8-4: The Ohmic region

„ the figure shows that The Q-point is moved along the load line
by varying VGS from 0 to -2

„ At any point the resistance

between the drain and source can be
calculated from

„ As expected, the figure shows that

for less ID we have more VDS See example 8-14 for
Æ RDS increases with increasing VGS how RDS highly varies
with VGS

8-5: The MOSFET

„ The metal oxide semiconductor FET uses an insulated gate (layer of
SiO2) to isolate the gate from the channel. Two types are the enhancement
mode (E-MOSFET) and the depletion mode (D-MOSFET).
E-MOSFET – Main Structure
„ E-MOSFET has no channel
until it is induced by a voltage
applied to the gate, so it operates
only in enhancement mode. An
n-channel type is illustrated here;
a positive gate voltage above a
threshold value induces the
channel creating a thin layer of
-ve charges (electrons). As
VGS increase Æ -ve charges
increase Æ conductivity increase

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 8-5: The MOSFET
E-MOSFET – transfer characteristic curve
„ the general transfer characteristic curves for n-channel E-MOSFET shows
that there is no drain current until reaching a threshold voltage, VGS(th).

The equation for the E-MOSFET

transfer characteristic curve is

Where K is constant depend on particular

E-MOSFET (can be calculated from the
equation or given in data sheet)

8-5: The MOSFET

E-MOSFET – biasing
„ there are two ways to bias an E-MOSFET are voltage-divider
bias, and drain-feedback bias. In E-MOSFET VGS must be > VGS(th)
For voltage divider bias

where
Fro drain feedback bias, IG is
negligible Æ no Voltage
across RG ÆVG = VD

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 8-5: The MOSFET
E-MOSFET : Example

To calculate ID wee need to find K Æ from

given ID(on)

Hence ID for VGS = 3.13V is

8-5: The MOSFET

D-MOSFET – Main Structure
„ The D-MOSFET has a channel that can is controlled by the gate
voltage. For an n-channel type, a negative voltage depletes the
channel (Depletion mode); and a positive voltage enhances the
channel (Enhancement mode).

Here we will concentrate on Depletion mode MOSFET (D-MOSFET)

because it is the most common used

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 8-5: The MOSFET
D-MOSFET
„ In depletion mode, as VGS increase Æ +ve
ions in the channel increase Æ less electrons
Æ conductivity decreases Æ Drain current
decreases as shown in transfer curve
„ D-MOSFET has same characteristics as
JFET as you note from transfer curve where
VGS(off) = -VP and at VGS = 0, ID = IDSS

Same drain current relation

is also the same

8-5: The MOSFET

D-MOSFET – biasing
In addition to biasing methods for E-MOSFET (voltage divider and
drain feedback) D-MOSFETs can also be biased with zero biasing
method shown (by setting VGS = 0 Æ ID = IDSS). Hence

The purpose of RG is to
accommodate an ac signal input
by isolating it from ground

Example: calculate VDS if RD = 620Ω,

RG = 10MΩ, VDD = +18V,
VGS (off) = -8V, and IDSS = 12mA

since

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