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Team Nexperia
 PMD3001D
MOSFET driver
Rev. 02 — 28 August 2009 Product data sheet

1. Product profile

1.1 General description

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.

1.2 Features
n Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration
n Application-optimized pinout
n Space-saving solution
n Internal connections to minimize layout effort
n Reduces component count

1.3 Applications
n MOSFET driver
n Power bipolar transistor driver
n Output current booster for operational amplifier

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 40 V
IC collector current - - 1 A
ICM peak collector current single pulse; - - 2 A
tp ≤ 1 ms
NXP Semiconductors PMD3001D
MOSFET driver

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base TR1, TR2
6 5 4 6 5 4
2 collector TR2
3 collector TR2
TR1 TR2
4 emitter TR1, TR2 1 2 3
5 collector TR1
6 collector TR1 1 2 3
006aaa659

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMD3001D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

4. Marking
Table 4. Marking codes
Type number Marking code
PMD3001D 9F

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 2 of 16

NXP Semiconductors PMD3001D
MOSFET driver

5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 40 V
IC collector current - 1 A
ICM peak collector current single pulse; - 2 A
tp ≤ 1 ms
IBM peak base current - 0.3 A
single pulse; - 1 A
tp ≤ 1 ms
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 330 mW
[2] - 400 mW
[3] - 580 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

006aaa784
600
(1)

Ptot
(mW)

(2)
400
(3)

200

0
−75 −25 25 75 125 175
Tamb (°C)

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 3 of 16

NXP Semiconductors PMD3001D
MOSFET driver

6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] - - 380 K/W
junction to ambient [2] - - 315 K/W
[3] - - 215 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

006aaa785
103
duty cycle =
Zth(j-a) 1
(K/W) 0.75
0.5
102 0.33
0.2
0.1

0.05

10 0.02
0.01

0
1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 4 of 16

NXP Semiconductors PMD3001D
MOSFET driver

006aaa786
103
duty cycle =
Zth(j-a)
1
(K/W)
0.75
0.5
102 0.33
0.2
0.1

0.05
10
0.02
0.01

0
1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)

FR4 PCB, mounting pad for collector 1cm2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa787
103
duty cycle =
Zth(j-a)
(K/W)
1
0.75
102 0.5
0.33
0.2
0.1

0.05
10
0.02
0.01

0
1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 5 of 16

NXP Semiconductors PMD3001D
MOSFET driver

7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per NPN transistor
ICBO collector-base cut-off VCB = 40 V; IE = 0 A - - 100 nA
current VCB = 40 V; IE = 0 A; - - 50 µA
Tj = 150 °C
hFE DC current gain VCE = 5 V; IC = 1 mA 300 450 -
VCE = 5 V; IC = 200 mA 300 450 830
VCE = 5 V; IC = 500 mA [1] 300 400 -
VCE = 5 V; IC = 1 A [1] 200 340 -
VCE = 5 V; IC = 2 A [1] 75 120 -
VCEsat collector-emitter IC = 100 mA; IB = 5 mA - 30 80 mV
saturation voltage IC = 500 mA; IB = 50 mA [1] - 100 120 mV
IC = 1 A; IB = 100 mA [1] - 180 230 mV
IC = 2 A; IB = 200 mA [1] - 360 440 mV
VBEsat base-emitter IC = 100 mA; IB = 5 mA - 0.75 0.9 V
saturation voltage IC = 500 mA; IB = 50 mA [1] - 0.9 1.1 V
IC = 1 A; IB = 100 mA [1] - 1 1.2 V
IC = 2 A; IB = 200 mA [1] - 1.1 1.3 V
VBE base-emitter voltage VCE = 5 V; IC = 1 A 700 800 1100 mV
Per PNP transistor
ICBO collector-base cut-off VCB = −40 V; IE = 0 A - - −100 nA
current VCB = −40 V; IE = 0 A; - - −50 µA
Tj = 150 °C
hFE DC current gain VCE = −5 V; IC = −1 mA 300 450 -
VCE = −5 V; IC = −200 mA 250 390 640
VCE = −5 V; IC = −500 mA [1] 215 290 -
VCE = −5 V; IC = −1 A [1] 150 200 -
VCE = −5 V; IC = −2 A [1] 50 85 -
VCEsat collector-emitter IC = −100 mA; IB = −5 mA - −40 −140 mV
saturation voltage IC = −500 mA; IB = −50 mA [1] - −110 −170 mV
IC = −1 A; IB = −100 mA [1] - −200 −310 mV
IC = −2 A; IB = −200 mA [1] - −400 −500 mV
VBEsat base-emitter IC = −100 mA; IB = −5 mA - −0.75 −0.9 V
saturation voltage IC = −500 mA; IB = −50 mA [1] - −0.88 −1.1 V
IC = −1 A; IB = −100 mA [1] - −0.95 −1.2 V
IC = −2 A; IB = −200 mA [1] - −1.1 −1.3 V
VBE base-emitter voltage VCE = −5 V; IC = −1 A −700 −800 −1100 mV

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 6 of 16

NXP Semiconductors PMD3001D
MOSFET driver

Table 7. Characteristics …continued

Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per device
td delay time IC = 0.5 A; VI = 8 V - 3 - ns
tr rise time - 17 - ns
ton turn-on time - 20 - ns
ts storage time - 3 - ns
tf fall time - 6 - ns
toff turn-off time - 9 - ns

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 7 of 16

NXP Semiconductors PMD3001D
MOSFET driver

006aaa788 006aaa793
800 2.4
IB (mA) = 17
hFE 15.3
IC 13.6
(1)
(A) 11.9
10.2
600 8.5
1.6
(2) 6.8
5.1

400 3.4

(3)
0.8
1.7
200

0 0
10−1 1 10 102 103 104 0 1 2 3 4 5
IC (mA) VCE (V)

VCE = 5 V Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (NPN): DC current gain as a function of Fig 6. TR1 (NPN): Collector current as a function of
collector current; typical values collector-emitter voltage; typical values

006aaa789 006aaa792
1.0 1.2
VBEsat
VBE
(V)
(V)
(1) 1.0
0.8
(1)

(2) 0.8
(2)
0.6

(3) 0.6 (3)

0.4
0.4

0.2 0.2
10−1 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)

VCE = 5 V IC/IB = 20
(1) Tamb = −55 °C (1) Tamb = −55 °C
(2) Tamb = 25 °C (2) Tamb = 25 °C
(3) Tamb = 100 °C (3) Tamb = 100 °C
Fig 7. TR1 (NPN): Base-emitter voltage as a function Fig 8. TR1 (NPN): Base-emitter saturation voltage as
of collector current; typical values a function of collector current; typical values

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 8 of 16

NXP Semiconductors PMD3001D
MOSFET driver

006aaa790 006aaa791
1 1

VCEsat
(V)
VCEsat
(V)
10−1

(1)

10−1 (2)
(1)
(2)
10−2
(3)
(3)

10−2 10−3
10−1 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)

IC/IB = 20 Tamb = 25 °C
(1) Tamb = 100 °C (1) IC/IB = 100
(2) Tamb = 25 °C (2) IC/IB = 50
(3) Tamb = −55 °C (3) IC/IB = 10
Fig 9. TR1 (NPN): Collector-emitter saturation Fig 10. TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current; voltage as a function of collector current;
typical values typical values

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 9 of 16

NXP Semiconductors PMD3001D
MOSFET driver

006aaa794 006aaa799
800 −2.4
IB (mA) = −24
hFE −21.6
IC −19.2
(A) −16.8
(1) −14.4
600 −12
−1.6
−9.6
(2)
−7.2
400
−4.8

(3) −0.8
−2.4
200

0 0
−1 −10 −102 −103 −104 0 −1 −2 −3 −4 −5
IC (mA) VCE (V)

VCE = −5 V Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. TR2 (PNP): DC current gain as a function of Fig 12. TR2 (PNP): Collector current as a function of
collector current; typical values collector-emitter voltage; typical values

006aaa795 006aaa798
−1.0 −1.2
VBEsat
VBE
(V)
(V)
(1) −1.0
−0.8
(1)

(2) −0.8
(2)
−0.6

(3) −0.6 (3)

−0.4
−0.4

−0.2 −0.2
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

VCE = −5 V IC/IB = 20
(1) Tamb = −55 °C (1) Tamb = −55 °C
(2) Tamb = 25 °C (2) Tamb = 25 °C
(3) Tamb = 100 °C (3) Tamb = 100 °C
Fig 13. TR2 (PNP): Base-emitter voltage as a function Fig 14. TR2 (PNP): Base-emitter saturation voltage as
of collector current; typical values a function of collector current; typical values

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 10 of 16

NXP Semiconductors PMD3001D
MOSFET driver

006aaa796 006aaa797
−1 −1

VCEsat
(V)
VCEsat
(V)
−10−1
(1)
(2)
−10−1 (1)
(2)
(3)
(3)
−10−2

−10−2 −10−3
−10−1 −1 −10 −102 −103 −104 −10−1 −1 −10 −102 −103 −104
IC (mA) IC (mA)

IC/IB = 20 Tamb = 25 °C
(1) Tamb = 100 °C (1) IC/IB = 100
(2) Tamb = 25 °C (2) IC/IB = 50
(3) Tamb = −55 °C (3) IC/IB = 10
Fig 15. TR2 (PNP): Collector-emitter saturation Fig 16. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current; voltage as a function of collector current;
typical values typical values

8. Test information

VCC
(probe)
oscilloscope DUT
450 Ω
TR1
VO (probe)
VI oscilloscope
450 Ω
TR2
R1 RE

006aaa858

IC = 0.5 A; VI = 8 V; R1 = 56 Ω; RE = 15 Ω
Fig 17. Test circuit for switching times

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 11 of 16

NXP Semiconductors PMD3001D
MOSFET driver

9. Package outline

3.1 1.1
2.7 0.9

6 5 4 0.6
0.2

3.0 1.7
2.5 1.3 pin 1 index

1 2 3
0.40 0.26
0.95 0.25 0.10
1.9
Dimensions in mm 04-11-08

Fig 18. Package outline SOT457 (SC-74)

10. Packing information

Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PMD3001D SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 12 of 16

NXP Semiconductors PMD3001D
MOSFET driver

11. Soldering

3.45
1.95

solder lands

0.95
solder resist
3.30 2.825 0.45 0.55
occupied area

solder paste

1.60
1.70
3.10
3.20 msc422

Dimensions in mm
Fig 19. Reflow soldering footprint SOT457 (SC-74)

5.30

solder lands

5.05 0.45 1.45 4.45 solder resist

occupied area

1.40 msc423
4.30

Dimensions in mm
Fig 20. Wave soldering footprint SOT457 (SC-74)

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 13 of 16

NXP Semiconductors PMD3001D
MOSFET driver

12. Revision history

Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMD3001D_2 20090828 Product data sheet - PMD3001D_1
Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 20 “Wave soldering footprint SOT457 (SC-74)”: updated
PMD3001D_1 20060926 Product data sheet - -

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 14 of 16

NXP Semiconductors PMD3001D
MOSFET driver

13. Legal information

13.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these
modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no
representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the
information included herein and shall have no liability for the consequences of specified use without further testing or modification.
use of such information. Limiting values — Stress above one or more limiting values (as defined in
Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC 60134) may cause permanent
with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of
for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the
full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting
sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability.
office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold
full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
13.3 Disclaimers explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
General — Information in this document is believed to be accurate and terms and conditions, the latter will prevail.
reliable. However, NXP Semiconductors does not give any representations or
No offer to sell or license — Nothing in this document may be interpreted
warranties, expressed or implied, as to the accuracy or completeness of such
or construed as an offer to sell products that is open for acceptance or the
information and shall have no liability for the consequences of use of such
grant, conveyance or implication of any license under any copyrights, patents
information.
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
Export control — This document as well as the item(s) described herein
changes to information published in this document, including without
may be subject to export control regulations. Export might require a prior
limitation specifications and product descriptions, at any time and without
authorization from national authorities.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof. Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
Suitability for use — NXP Semiconductors products are not designed,
document, and as such is not complete, exhaustive or legally binding.
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PMD3001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 28 August 2009 15 of 16

NXP Semiconductors PMD3001D
MOSFET driver

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Packing information. . . . . . . . . . . . . . . . . . . . . 12
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
14 Contact information. . . . . . . . . . . . . . . . . . . . . 15
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 August 2009
Document identifier: PMD3001D_2