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Problem Set 08

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Yasmine Elogail
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18 views

Problem Set 08

Uploaded by

Yasmine Elogail
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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The German University in Cairo Electronics 5 Semester


Faculty of Information Engineering & Technology Semiconductors (Elct 503)
Electronics Department Fall 2006

Problem Set 8

1) The parameters in the base region of an npn bipolar tr ansistor are D B = 20 cm 2 / s,


n B ο = 10 4 cm − 3 , W B = 1µ m , and A BE = 10 − 4 cm 2 .
Assume the common - base current gain α = 0 .992 .
v BE
a) Calculate the magnitude of I s , knowing that I C = I s exp( )
vT
b) Determine the collector current for v BE = 0 .5V

c) What is the common emitter current gain ?


d) Determine the emitter and base currents correspond ing to the collector currents

2) What would be the maximum gain current of a transistor having a base width
of one diffusion length .

3) a) In a biploar biased in the forward - active region, the base current is I B = 6 µA and the
collector current is I c = 510 µA.Determine β ,α and I E

4) A uniformly doped silicon npn bipolar transistor is to be biased in the forward - active mode
with the B - C junction reverse biased by 3V.The metallurgical base width is 1.1µm.
The transistor dopings are N E = 1017 cm −3 , N B = 1016 cm −3and N C = 1015 cm −3 .
a) For T = 300K , calculate theB - E voltage at which the minority carrier electron concentration
at x = 0 is 10 percent of the majority carrier hole concentration at x = 0
b) At this bias , determine the minority carrier hole concentration at x = -x E
5) A uniformly doped silicon pnp transistor is biased in the forward - active mode.The doping
concentrations are N E = 1018 cm -3 , N B = 5 × 1016 cm -3 , N C = 1015 cm -3
a) Calculate the values of n Eο , p Bο and n Cο

b) For VEB = 0.65V , determine p B at x = 0, and n E at x = -x E

6) The following currents are measured in a uniformly doped npn bipolar transistor :
J nE = 1.2mA J pE = 0.1mA
J nC = 1.18mA J R = 0.2mA
J G = 0.001mA J pCο = 0.001mA
Determine a)α b)γ c)α T d ) β

7) An npn transistor is biased in the reverseactive mode with vBE = −3V


and vBC = 0.6V . The doping concent rat ions are N E = 1018 cm−3 , N B = 1017 cm−3 , NC = 1016 cm−3 .
Other parametersare x B = 1µm,τ = 2 ×10−7 s, DE = 10cm2 / s, DB = 20cm2 / s, DC = 15cm2 / s,
and A = 10-3 , Calculatethe collectorcurrent.

8) A Si p - n - p transisto r has the following properties at room temperatr ue :


τ = 0.1 µ s, D p = D n = 10 cm 2 / s , N E = 10 19 cm − 3 , N B = 10 16 cm − 3 , N C = 10 16 cm − 3 ,
W E = emitter wi dth = 3 µ m, W = 1.5 µ m = distance between base - emitter junction
and base - collector junction , A = cross - sectional area = 10 -5 cm 2 .
Calculate the neutral base width W b for V CB = 0 and V EB = 0 . 2V .

9) For the BJT in problem 8, calculate the emitter injection efficiency for VEB = 0.2V
10) The configuration of an npn transistor of fig.1 has the following impurity
concentration:
Emitter-region : (ND)E = 104ni , Base-region : (NA)B = 102ni ,, Collector region :
(ND)C = 103ni.
(i) Plot both carriers concentration in the three regions for VBE = 0V , VCD=0V.
(ii) Draw the symbol of this transistor indicating voltages and current directions
in the Forward-Active mode.
(iii) If VBE = 60mV, VCB = 120mV, then redraw the new distribution in the three
regions.

fig.1

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