TPC SERIES CHIP FILM

STACKED FILM
CONSTRUCTION

CB SERIES
1.0 INTRODUCTION

TPC CB series chip film capacitors utilize stacked film technology, which also forms the basis for
the capacitive element in BF series leaded film capacitors.

In the leaded format, the element has leads attached and the assembly is encased, but for
surface mount applications, the “naked chip” element is terminated and used directly on the pcb.

This means that internal construction of the multilayer stack, usually hidden in leaded film
construction, is visible at the cut edges in the surface mount configuration.

In a typical film capacitor stack, hundreds of film layers are compacted during manufacture.
Under a microscope these have the appearance of pages in a book. Subsequent heat treatment
and pcb assembly processes allow a small amount of relaxation in these layers. In some cases,
small gaps between layers may become visible. These are referred to as microgaps, and their
occurrence is a standard feature of this technology. The following report details the origin and
distribution of microgaps and includes life and environmental test results that confirm that the
presence of these gaps has no effect on mechanical or electrical performance or reliability,
whatever the width or the length.
2.0 DESCRIPTION & ANALYSIS
During manufacture, the film layers are compacted as a result of a series of operations:

- Film Tension during the initial winding operation;

- Thermal expansion of winding wheel during subsequent heat treatment;
- Film shrinkage during heat treatment;
- Bending stress;
- Heat treatment temperature.

During the heat treatment phase, pressure, and hence compaction, is less intense on the edges
than on the center of the component. This is, in part, due to the end termination (because the end
spray exerts some tension across the center of the assembly) and in part due to the shrinkage of
the film in the winding direction. This means that the free (unterminated) sides of the component
can undergo a degree of relaxation during subsequent heat treatments or thermal excursions.

The actual range of spacing dimensions (microgaps) that may be seen on the cut face of the
component depend upon the degree of initial compaction of the layers, the number of stress
relaxations during heat treatment and subsequent pcb assembly conditions and the size of the
chip itself.
Plastic film dielectric material has a surface roughness ~0.1µ. This gives a minimum figure for the
observed spacing between layers at the cut edge of the chip capacitor.
The distribution of sizes of these microgaps can vary from 0.1µ to 0.2mm, the upper limit being
visually evident.

3.0 TEST RESULTS

Comparative electrical testing has been performed on product showing a wide range of gap size
and relaxation for both PEN and PET-HT dielectric. The details results are attached; there is no
difference seen between parts with or without visible gaps or for the two dielectric materials. The
microgaps do not affect the reliability of the product but are basic feature of stacked film
technology.

Tests include life and environmental; the water absorption in Damp Heat testing is limited by the
moisture coefficient of the dielectric and does not depend on the size of the fissures and
manufacturing technology. For PEN or PET-HT the moisture absorption is below 0.8%.
From : GRIFFONNET P. Test N° : 260.PF.092A
To : N.CHAPAS
info: M. DELFOUR

TESTS REPORT:
RELIABILITY
TITLE OF STUDY ORDER: OPTIMISATION ACTUAL FILM CHIP CAPACITOR

TITLE OF STUDY SUB-ORDER:

FISSURES on CHIPS FILM PET :

Influence on the RELIABILITY

SAMPLING:
*Lot 1: 100 NF 63V without FISSURES (<=0.02mm after Soldering)
*Lot 2: 100 NF 63V with FISSURES (0.1mm to 0.2 mm after Sodering)
*Lot 3: 470 NF 63 V without FISSURES (<=0.02mm after Soldering)
*Lot 2: 470 NF 63V with FISSURES (0.1mm to 0.2 mm after Sodering)
*Lot 3: 1 µF 63V without FISSURES (<=0.02mm after Soldering)
*Lot 4: 1 µF 63V with FISSURES (0.1mm to 0.2 mm after Sodering)
*Lot 1: 3.3 µF 63V without FISSURES (<=0.02mm after Soldering)
*Lot 2: 3.3µF 63V with FISSURES (0.1mm to 0.2 mm after Sodering)
*Lot 3: 1 µF 250V without FISSURES (<=0.02mm after Soldering)
*Lot 4: 1 µF 250V with FISSURES (0.1mm to 0.2 mm after Sodering)

TESTS:
See board annexed

RESULTS:
See board annexed

CONCLUSION :
GOOD BEHAVIOUR OF ALL THE SAMPLES :
NOT INFLUENCE OF THE FISSURES ON THE RELIABILITY
RESULTS

March 1998
GRIFFONNET P
STUDY NUMBER : 260 PF 092A Label : INFLUENCE OF THE FISSURES ON THE RELIABILITY RESULTS

CHIPS FILM PET Page 1 / 2

Test : Endurance - Deep Current - (85°C / 1,25Ur)

Observation : Measure at 1000 Hours
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
-4
DATALOG LABEL ± 8% 50 x 10 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) -1,9 0,2 -2,7 -1,5 -6 7 13 500 170 10 15
100nF / 63V with fissure (2) -2,1 0,4 -2,9 -1,9 -2 3 15 350 100 40 15
470nF / 63Vdc / without fissure (1) -2,9 0,2 -3,2 -2,5 -6 5 7 150 50 75 15
470nF / 63V with fissure (2) -1,8 0,8 -4,1 -0,5 4 9 20 110 30 65 15
1µF / 63Vdc / without fissure (1) -2,4 0,4 -3,1 -1,8 -1 3 8 75 20 56 15
1µF / 63V with fissure (2) -2,6 0,3 -3,1 -2,1 1 11 15 13 60 22 15
3,3µF / 63Vdc / without fissure (1) -2,3 0,5 -3,1 -1,5 -1 2 3 18 5 9 15
3,3µF / 63V with fissure (2) -2,1 0,4 -2,8 -1,4 -2 2 2 25 7 11 15
1µF / 250Vdc / without fissure (1) -0,6 0,1 -0,9 -0,3 -1 2 1 65 25 13 15
1µF / 250V with fissure (2) -0,9 0,3 -1,5 -0,5 -1 2 3 60 35 12 15

Test : Endurance - Deep Current - (105°C / Ur)

Observation : Measure at 1000 Hours
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
DATALOG LABEL ± 7% 50 x 10-4 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) -2,2 0,3 -2,8 -1,9 -1 12 30 440 140 50 15
100nF / 63V with fissure (2) -2,5 0,5 -3,4 -2,3 0 5 20 350 100 75 15
470nF / 63Vdc / without fissure (1) -3,1 0,3 -3,9 -2,7 -5 7 5 100 20 70 15
470nF / 63V with fissure (2) -1,7 0,4 -2,5 -1,1 -7 4 5 80 15 50 15
1µF / 63Vdc / without fissure (1) -2,4 0,3 -3,0 -1,9 1 3 8 60 6 50 15
1µF / 63V with fissure (2) -2,8 0,2 -3,2 -2,4 2 3 11 64 5 53 15
3,3µF / 63Vdc / without fissure (1) -2,5 0,5 -3,1 -1,6 -1 2 6 16 3 12 15
3,3µF / 63V with fissure (2) -2,1 0,4 -2,7 -1,5 0 3 7 18 4 8 15
1µF / 250Vdc / without fissure (1) -0,7 0,1 -0,9 -0,6 1 2 6 60 17 12 15
1µF / 250V with fissure (2) -0,9 0,4 -2,0 -0,6 -1 3 9 37 15 13 15

Test : Endurance - Deep Current - (125°C / Ur)

Observation : Measure at 1000 Hours
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
DATALOG LABEL ± 7% 50 x 10-4 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) -5,8 0,9 -6,9 -4,4 5 10 35 250 50 100 15
100nF / 63V with fissure (2) -6,1 1,1 -7,2 -5,2 8 5 28 400 100 50 15
470nF / 63Vdc / without fissure (1) -3,5 0,3 -4,0 -2,9 -10 6 -2 75 25 5 15
470nF / 63V with fissure (2) -2,9 0,7 -3,9 -1,6 -5 4 -1 60 25 4 15
1µF / 63Vdc / without fissure (1) -2,7 0,3 -3,3 -2,1 -1 3 7 70 6 50 15
1µF / 63V with fissure (2) -3,0 0,3 -3,8 -2,6 -2 4 11 65 5 55 15
3,3µF / 63Vdc / without fissure (1) -2,5 0,5 -3,1 -1,7 -1 4 12 18 2 14 15
3,3µF / 63V with fissure (2) -2,5 0,3 -2,9 -1,9 -4 3 1 12 4 5 15
1µF / 250Vdc / without fissure (1) -1,0 0,2 -1,7 -0,7 2 4 10 50 25 8 15
1µF / 250V with fissure (2) -0,9 0,1 -1,2 -0,8 1 3 8 40 25 14 15

Test : Endurance - Deep Current - (140°C / 0,5Ur)

Observation : Measure at 1000 Hours
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
DATALOG LABEL ± 7% 50 x 10-4 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) -3,3 0,3 -3,7 -2,7 -7 3 -1 340 50 220 15
100nF / 63V with fissure (2) -3,5 0,5 -4,1 -2,7 -10 7 8 260 40 180 15
470nF / 63Vdc / without fissure (1) -2,7 1,2 -4,5 -2,4 -8 2 2 110 10 75 15
470nF / 63V with fissure (2) -2,5 1,3 -3,7 -2,1 -5 5 5 100 15 50 15
1µF / 63Vdc / without fissure (1) -3,9 0,3 -4,4 -3,4 -9 8 10 50 22 5 15
1µF / 63V with fissure (2) -4,2 0,2 -4,5 -3,8 -10 8 18 40 10 10 15
3,3µF / 63Vdc / without fissure (1) -3,4 0,3 -3,8 -2,9 -5 4 2 63 3 60 15
3,3µF / 63V with fissure (2) -3,3 0,2 -3,9 -2,7 -3 4 4 60 4 50 15
1µF / 250Vdc / without fissure (1) -1,3 0,2 -1,6 -0,8 -1 5 14 60 14 30 15
1µF / 250V with fissure (2) -1,3 0,1 -1,4 -1,1 -2 2 5 55 12 30 15

(1) : Fissures <= 0.02 mm after soldering .... (2) : Fissures > 0.2 mm after soldering
STUDY NUMBER : 260 PF 092A Label : INFLUENCE OF THE FISSURES ON THE RELIABILITY RESULTS

CHIPS FILM PET Page 2 / 2

Observation : Measure at 1000 Hours

dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
-4
DATALOG LABEL ± 7% 50 x 10 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) -3,3 0,5 -4,5 -2,8 5 5 13 450 100 80 15
100nF / 63V with fissure (2) -2,9 0,2 -3,6 -2,7 2 5 9 480 120 50 15
470nF / 63Vdc / without fissure (1) -3,4 0,3 -4,2 -3,1 -2 7 15 64 30 22 15
470nF / 63V with fissure (2) -3,7 0,7 -5,1 -1,9 -6 10 10 55 15 25 15
1µF / 63Vdc / without fissure (1) -3,5 1,0 -5,8 -2,1 -5 6 8 45 8 33 15
1µF / 63V with fissure (2) -3,6 0,9 -5,1 -2,1 -6 6 9 50 6 40 15
3,3µF / 63Vdc / without fissure (1) -2,4 0,5 -3,1 -1,3 -2 2 2 15 3 8 15
3,3µF / 63V with fissure (2) -2,2 0,4 -2,6 -1,4 -1 2 3 12 5 5 15
1µF / 250Vdc / without fissure (1) -1,0 0,2 -1,7 -0,8 3 3 10 42 10 15 15
1µF / 250V with fissure (2) -1,1 0,3 -1,9 -0,8 0 5 6 33 15 9 15

Test : DAMP HEAT - steady state / 40°C / 93% Relative Humi dity
Observation : Measure at 56 Days
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
DATALOG LABEL ± 7% 50 x 10-4 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) 4,0 0,5 3,2 4,7 8 10 30 250 100 25 15
100nF / 63V with fissure (2) 3,8 0,4 3,0 4,6 9 5 20 160 120 20 15
470nF / 63Vdc / without fissure (1) 2,2 1,5 0,5 4,5 10 7 25 30 15 8 15
470nF / 63V with fissure (2) 3,5 1,1 0,4 4,7 6 5 15 55 20 5 15
1µF / 63Vdc / without fissure (1) 4,5 0,3 3,8 4,9 9 5 20 14 4 5 15
1µF / 63V with fissure (2) 4,7 0,1 4,2 4,8 7 5 15 12 6 5 15
3,3µF / 63Vdc / without fissure (1) 3,6 0,4 2,8 4,3 7 2 13 28 10 12 15
3,3µF / 63V with fissure (2) 3,7 0,4 2,7 4,1 12 3 18 33 12 8 15
1µF / 250Vdc / without fissure (1) 2,8 0,8 1,2 3,4 5 4 15 35 5 12 15
1µF / 250V with fissure (2) 2,5 0,9 0,8 2,9 10 4 16 30 10 10 15

Test : DAMP HEAT - steady state / 85°C / 85% Relative Humi dity with 1,5 Vdc
Observation : Measure at 500 Hours
dC/C (1kHz) Delta DF (1 kHz) IR (Gohm)
DATALOG LABEL ± 7% 70 x 10-4 0,5 initial limit Quantity
Average Std Minimum Maximum Average Std. Maximum Average Std. Minimum
100nF / 63Vdc / without fissure (1) 1,8 0,8 0,8 3,3 18 3 23 140 50 45 15
100nF / 63V with fissure (2) 2,1 1,0 0,5 3,5 15 8 20 180 40 60 15
470nF / 63Vdc / without fissure (1) 2,4 1,6 0,1 4,9 15 5 25 40 10 9 15
470nF / 63V with fissure (2) 2,7 1,4 0,3 4,6 10 8 30 60 12 15 15
1µF / 63Vdc / without fissure (1) 3,6 1,3 1,2 4,9 20 3 28 15 3 9 15
1µF / 63V with fissure (2) 3,0 1,2 0,7 4,5 25 3 35 12 4 5 15
3,3µF / 63Vdc / without fissure (1) 4,4 0,4 3,8 4,7 25 2 28 12 4 4 15
3,3µF / 63V with fissure (2) 4,5 0,5 3,5 4,9 20 2 25 15 6 3 15
1µF / 250Vdc / without fissure (1) 4,5 1,1 2,0 5,1 8 5 23 15 6 6 15
1µF / 250V with fissure (2) 4,6 0,6 3,8 4,8 6 4 15 13 5 5 15

(1) : Fissures <= 0.02 mm after soldering .... (2) : Fissures > 0.2 mm after soldering
 A division of AVX Corporation

Avenue du colonel prat

21850 Saint Apollinaire
France
Tel : + 33 + 80 71 74 00
Télécopie : + 33 3 80 74 87 28

April 11th, 2012

SUBJECT / Certificate of Compliance.

Product : Chip Film Capacitors range

We confirm that microgaps and peeling observed on Chip Film Capacitors is

intrinsic of technology and doesn’t affect the electrical characteristics and the
components reliability

Didier BILLOTTET
Quality Manager
TPC / AVX Saint Apollinaire