Faculty of Computer Science and Engineering

CO2037 - Electronic Device Component

Lab 3
BIPOLAR JUNCTION TRANSISTOR - BJT

Sinh vi¶n b¡o c¡o: MSSV

B nh Huýnh Minh Huy 2311118

L¶ V«n ¼nh Huy 2311160
Nguy¹n Quèc Gia Huy 2311215
Tr¦n «ng Khoa 2311645
GVHD: Ph¤m Cæng Th¡i

November 4, 2024
 Contents

BIPOLAR JUNCTION TRANSISTOR - BJT 2

1 BJT in Saturation Mode 2

2 DC Sweep Simulation 2

3 BJT use as a switch 3

4 Drive a device with an NPN BJT 3

4.1 Theory calculations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

4.2 Simulation Result . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

4.3 Compare . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

5 Simple Bias Configuration 4

5.1 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

5.2 Circuit Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

6 PNP circuit 5
6.1 Theoretical Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

6.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

6.3 Comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7 Circuit with NPN and PNP Bipolar Junction Transistors 6

7.1 Theoretical Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2 Comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.3 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

8 NPN circuit with E resistance 7

8.1 Theoretical calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

8.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Darlington circuit 8
9.1 Theoretical calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

9.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Common Base 8
10.1 Theoretical calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

10.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Current Mirror 9
11.1 Theoretical calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.3 Expand configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 BJT's logic gate application 10

12.1 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Opto 11
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1 BJT in Saturation Mode

Change R1 to 1 k Ω, let the default transistor gain is β = 100, VCE = 0.65 V and VBE = 0.7 V . The

simulation result as the following: The results in PSpice are explained as follow:

VBB − VBE 5 − 0.7

ˆ Ohm's Law state that: IB = = = 4.3 mA
R1 1000
ˆ Assume that BJT is in active mode: IC = β × IB = 0.43 mA
ˆ Thus, VCE = VCC − IC R2 = −33 V
VCC − VCE
As VCE < 0, this transistor stays in saturation mode. Then IC = = 93.5 mA
R2

2 DC Sweep Simulation

The plot show how V1 affect the current IC flow through BJT:

The transistor becomes saturated when V1 approaching the value of 1.9 V .

At this value of V1 , use Cursor, show that IB = 1.0074 mA
And IC(SAT ) equals 97.889 mA

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3 BJT use as a switch

Given a BJT circuit, determine value ofR1 and R2 such that IC = 50 mA, VCE = 30 mA. Assume that

this BJT have VBE = 0.7 V and β = 100.

VCC − VCE(sat) 10 − 30 × 10−3
R2 = = = 199.4 Ω
IC(sat) 50 × 10−3
IC 50 × 10−3
IB = = = 0.5 mA
β 100
VBB − VBE 5 − 0.7
R1 = = = 8.6 kΩ
IB 0.5 × 10−3

4 Drive a device with an NPN BJT

4.1 Theory calculations

According to the limits of the LOAD and the transistor:

300 mA (min of LOAD) < IC < 400 mA (max of transistor)

3 mA (min of LOAD) < IB < 4 mA (max of transistor)

With IB(min) = 3 mA, we have:

Vter − VR1 − VBE 5 − 3 × 10−3 × 100 − 0.7

RB(max) = = = 1333.3333 Ω
IB 3 × 10−3
With IB(max) = 4 mA, we have:

Vter − VR1 − VBE 5 − 4 × 10−3 × 100 − 0.7

RB(min) = = = 975 Ω
IB 5 × 10−3
V2 − VBE 5 − 0.7
As, RB = 1 kΩ. Then IB = = = 3.91 mA
R1 + RB 100 + 1000

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4.2 Simulation Result

4.3 Compare

Theory PSpice

RB VBE IB IC VBE IB IC
RB (min) 975 Ω 0.7 V 4 mA 400 A 927.8 mV 3.788 mA 378.8 mA
RB (max) 1333.3333 Ω 0.7 V 3 mA 300 mA 920.4 mV 2.846 mA 284.6 mA
RB (selected) 1 kΩ 0.7 V 3.91 mA 391 mA 927.2 mV 3.703 mA 370.3 mA

5 Simple Bias Configuration

5.1 Simulation

Case 1: Circuit with RC = 10 Ω

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Case 2: Circuit with RC = 1 kΩ

5.2 Circuit Analysis

By using exact method, IE can be found as follow (this method using Th²venin's theorem):

80.103 × 40.103 80
RT h = R1 ||R2 = 3 3
= Ω
80.10 + 40.10 3
R2 40
VT h = VR2 = VCC = 12 × =4V
R1 + R2 80 + 40
Apply Th²venin equivalence network and Kirchhoff's voltage law:

VT h − IB RT h − VBE − IE RE = 0
have that, IE = (β + 1)IB
VT h − VBE 4 − 0.7
then, IE = = = 925.9 µA
RT h 80/3
− RE − 3.3 × 103
β+1 100 + 1
Through the above calculation, it is easily see that IE is not dependent on RC . The difference in the result of

IE is result from the value of VBE , in theory is 0.7 V compare to 0.77 V of PSpice simulation.

6 PNP circuit

Give a PNP transistor circuit. Determine IB , IE and IC . Assume the current gain β = 100.

6.1 Theoretical Calculation

Apply Kirchhoff's voltage law for the Base-Emitter loop: VCC − VEB − IB RB = VBB .
Thus,
VCC − VEB − VBB 12 − 0.7 − 8
IB = = = 82.5 µA (have that VEB = 0.7 V )
RB 40 × 103

Then,

IC = β × IB = 8.25 mA

Finally,

IE = IB + IC = 8.3325 mA
.

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6.2 Simulation

6.3 Comparison

IB (theory) = 82.5 µA compare to IB (simulation) = 79.31 µA

IC (theory) = 8.25 mA compare to IC (simulation) = 7.931 mA
IE (theory) = 8.3325 mA compare to IE (simulation) = 8.01 mA

7 Circuit with NPN and PNP Bipolar Junction Transistors

7.1 Theoretical Calculation

Have that VE < VB , therefore transistor Q2 is in cut-off stage.

Apply Kirchhoff's voltage law:

VA − BBE 5 − 0.7
IB = = = 38.7 µA
RB + (β + 1)RE 10k + (100 + 1)1k

Then,

IC = β × IB = 3.8739 mA
IEG = IB + IC = 3.9126 mA
VE = IEG × RE = 3.9126 V
VB = VE + V BE = 4.6126 V

7.2 Comparison

IB (theory) = 38.74 µA compare to IB (simulation) = 37.76 µA

IC (theory) = 3.874 mA compare to IC (simulation) = 3.776 mA
IE (theory) = 3.913 mA compare to IE (simulation) = 3.814 mA
VE (theory) = 3.913 V compare to VE (simulation) = 3.814 V
VB (theory) = 4.163 V compare to VB (simulation) = 4.622 V

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7.3 Simulation

8 NPN circuit with E resistance

8.1 Theoretical calculation

Apply Kirchhoff's Voltage Law to the left loop of NPN got that:

V2 − IB R1 − VBE − IE R3 = 0 ⇔ V2 − IB R1 − VBE − (β + 1)IB R3 = 0 (1)

Solving for (1),

V2 − VBE 4 − 0.7
IB = = = 0.0234 mA
R1 + (β + 1)R3 40k + (100 + 1)1k
Then,

IC = β × IB = 2.3404 mA
IE = IB + IC = 2.3638 mA
VE = IE × R3 = 2.3638 V
VC = V1 − IC R2 = 9.6596 V

8.2 Simulation

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9 Darlington circuit

9.1 Theoretical calculation

Apply KVL, got that: VXG = IBE RB − VBE − VEG , solving for IBE = 3.404 µA.
Then, IAC = β × IBE = 340.4 µA.
Calculate next:

- IAL = β(IBE + IAC ) = 34.382 mA

- VLG = VA − IAL RAL = −6.16 V . VLG < 0 ⇒ Q2 saturates.

VAL
- IAL(sat) = RAL = 21.277 mA
IAL(sat)
- = 6250
IBE

9.2 Simulation

10 Common Base

10.1 Theoretical calculation

V1 − VBE
Apply KVL for Base-Emitter loop: −V1 + IE R1 + VBE = 0 ⇒ IE = = 2.75 mA.
R1
IE
IB = = 27.23 µA
β+1
Then,
IC = βIB = 2.7228 mA
VCE = V1 + V2 − IE R2 = 4.1648 V

10.2 Simulation

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11 Current Mirror

11.1 Theoretical calculation

VCC − VBE
Apply circuit analysis, Icontrol can be determined by: Ictrl = .
R1
Then,
12 − 0.7
Ictrl = = 5.65 mA
2 × 103
As seen in the circuit above, IL = IC2 = βIB2 . Assume that 2 transistor are identical and Ictrl ∼
= βIB1 . Thus,

IL ∼
= Ictrl = 5.65 mA

11.2 Simulation

The current above called mirror current because the current through a load is controlled by a current at another

point in the network. That is, if the controlling current is raised or lowered the current through the load will

change to the same level.

11.3 Expand configuration

Now, replace the resistor R1 with a 100-Ohms one. Next, calculate all the values again.

V1 − 0.7
- Ictrl = = 113 mA
R1
Ictrl
- IB1 = = 1.13 mA = IB2
β
- IC2 = IL = βIB2 = 113 mA > IC2 (sat) = 12 mA (not satisfied) ⇒ Q2 is saturated, thus IL = IC2 (sat) =
12 mA.

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The transistor Q2 saturates so IL ̸= Ictrl , then there is not the current mirror.

12 BJT's logic gate application

The figure below shows how a BJT is used to make a logic NOT gate.

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12.1 Simulation

13 Opto

Calculate for Vout :

V − VF 9 − 1.7
- IF = = = 0.73 mA
R1 10000
- I = CT R × IF = 1.46 mA
- VOU T = 5 − IR2 = −1.862 V
Opto is used for isolating the input from the output, providing protection against high voltages and noise.

By using an optocoupler, you can safely interface different parts of your circuit while protecting sensitive

components from potential damage.

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