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    Energy_gap_in_semiconductors (1)

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    Aryan Anand Palimkar ep21b007

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    Energy_gap_in_semiconductors (1)

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    Aryan Anand Palimkar ep21b007
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    Energy_gap_in_semiconductors (1)

    Uploaded by

    Aryan Anand Palimkar ep21b007

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 4

    Energy gap in semiconductors

    Aryan Anand Palimkar ep21b007


    April 2024

    1 Introduction and Aim


    In an n-doped semiconductor,the current density can be written as J ≈ qnµn ϵ.
    Hence, the mobility is dependent on the carrier concentration as well as the
    mobility generally. Neglecting the impact on mobility by scattering with impu-
    rities, in the intrinsic region, the carrier concentration n roughly becomes equal
    to the intrinsic carrier concentration ni due to thermal generation of electron-
    hole pairs.
    E (T )
    ni ∝ T 3/2 exp[− 2kgB T ], where Eg (T ) = Eg (0) − γT is the temperature de-
    pendent band gap that separates the conduction band from the valence band.
    Temperature dependence of conductivity is largely dominated by the exponen-
    tial dependence of the carrier concentration and consequently plot of log(σ)
    Eg (0)
    with T1 gives a straight line with slope 2k B
    .
    The resistivity is evaluated from the formula ρ = ( VI )2πS,where S is the spacing
    between the probes which hold the sample.

    2 Apparatus
    The experiment requires a constant current source, a voltmeter with high input
    resistance, a thermometer, and a device for changing the sample’s temperature
    at a small and constant rate.

    1
    3 Observation Table
    Current is kept constant at 8mA. The separation between the probes is 2mm.

    Voltage(V) ρ log(ρ) T(◦ C) T(K) 1/T (K −1 )


    0.354 5.561 1.716 30 303 0.00330
    0.352 5.529 1.710 34 307 0.00326
    0.347 5.451 1.696 38 311 0.00322
    0.338 5.309 1.669 42 315 0.00317
    0.324 5.089 1.627 46 319 0.00313
    0.306 4.807 1.570 50 323 0.00310
    0.285 4.477 1.499 54 327 0.00306
    0.262 4.115 1.415 58 331 0.00302
    0.235 3.691 1.306 62 335 0.00299
    0.209 3.283 1.189 66 339 0.00295
    0.184 2.890 1.061 70 343 0.00292
    0.159 2.498 0.915 74 347 0.00288
    0.135 2.121 0.752 78 351 0.00285
    0.114 1.791 0.583 82 355 0.00282
    0.093 1.461 0.379 86 359 0.00279
    0.073 1.147 0.137 90 363 0.00275
    0.057 0.895 -0.111 94 367 0.00272
    0.042 0.660 -0.416 98 371 0.00270
    0.03 0.471 -0.752 102 375 0.00267
    0.019 0.298 -1.209 106 379 0.00264
    0.008 0.126 -2.074 110 383 0.00261

    2
    4 Plot and Calculations

    Slope of the linear fit


    Eg (0)
    = 4578.75
    2kB
    2 × 4578.75 × 1.38 × 10−23
    ⇒ Eg = eV
    1.6 × 10−19
    Eg = 0.789eV

    5 Error analysis
    Relative error in measurement of resistivity is given by
    ∆ρ ∆V ∆I ∆S
    = + + (1)
    ρ V I S
    0.001 0.01 0.01
    = + + (2)
    0.338 8.00 2.00
    = 0.0092 (3)

    ∆Eg ∆ρ ∆T
    = + (4)
    Eg ρlog(ρ) T
    0.0092 1
    = + (5)
    1.669 315
    = 0.0087 (6)
    ⇒ ∆Eg = 0.0087 × 0.789 = 0.0069eV

    3
    6 Sources of Error and Discussions
    The band gap of Germanium was found to be (0.789±0.0069) eV, while the
    actual bandgap is found to be 0.7 eV.
    Temperature may not be high enough for intrinsic behaviour approximation to
    hold true during the start of the experiment when the temperature is around
    30◦ C.
    Voltmeter’s internal resistance also affects the readings

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