SCT025H120G3AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A

in an H²PAK-7 package

Features
TAB
Order code VDS RDS(on) typ. ID

SCT025H120G3AG 1200 V 27 mΩ 55 A
7
1
• AEC-Q101 qualified
H 2PAK-7 • Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
Drain (TAB) • Source sensing pin for increased efficiency

Applications
Gate (1)
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
Driver
source (2)
• On board charger (OBC)

Power
source (3, 4, 5, 6, 7)
Description
N-chG1DS2PS34567DTAB
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.

Product status link

SCT025H120G3AG

Product summary

Order code SCT025H120G3AG

Marking 25H120G3AG
Package H²PAK-7
Packing Tape and reel

DS14137 - Rev 1 - November 2022 www.st.com

For further information contact your local STMicroelectronics sales office.
 SCT025H120G3AG
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 1200 V

Gate-source voltage -10 to 22

VGS Gate-source voltage (recommended operating values) -5 to 18 V
Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime -11 to 25

Drain current (continuous) at TC = 25 °C 55

ID(1) A
Drain current (continuous) at TC = 100 °C 55

IDM(2) Drain current (pulsed) 228 A

PTOT Total power dissipation at TC = 25 °C 375 W

Tstg Storage temperature range °C

-55 to 175
TJ Operating junction temperature range °C

1. ID is limited by package.
2. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 0.4 °C/W

RthJA Thermal resistance, junction-to-ambient 50 °C/W

DS14137 - Rev 1 page 2/14

 SCT025H120G3AG
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1200 V

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V 10 µA

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 5 mA 1.8 3.0 4.2 V

VGS = 15 V, ID = 25 A 32

RDS(on) Static drain-source on-resistance VGS = 18 V, ID = 25 A 27 37 mΩ

VGS = 18 V, ID = 25 A, TJ = 175 °C 48.5

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1990 - pF

Coss Output capacitance VDS = 800 V, f = 1 MHz, VGS = 0 V - 102 - pF

Crss Reverse transfer capacitance - 12 - pF

Qg Total gate charge - 73 - nC

Qgs Gate-source charge VDD = 800 V, VGS = -5 to 18 V, ID = 25 A - 23.5 - nC

Qgd Gate-drain charge - 23.5 - nC

Rg Gate input resistance f = 1 MHz, ID = 0 A - 1.3 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 800 V, ID = 25 A, - 378 - µJ

Eoff Turn-off switching energy RG = 15 Ω, VGS = -5 to 18 V - 305 - µJ

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 23 - ns

tr Rise time VDD = 800 V, ID = 25 A, - 27 - ns

td(off) Turn-off delay time RG = 15 Ω, VGS = -5 to 18 V - 48 - ns

tf Fall time - 25 - ns

DS14137 - Rev 1 page 3/14

 SCT025H120G3AG
Electrical characteristics

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

TC = 25 °C - 55
ISD(1) Continuous diode forward current A
TC = 100 °C - 55

VSD Diode forward voltage ISD = 25 A, VGS = 0 V - 2.7 V

trr Reverse recovery time - 16.8 ns

ISD = 25 A, di/dt = 1000 A/μs,
Qrr Reverse recovery charge - 117 nC
VDD = 800 V, VGS = -5 V
IRRM Reverse recovery current - 12 A

1. ISD is limited by package.

DS14137 - Rev 1 page 4/14

 SCT025H120G3AG
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance

ID GADG081120221016SOA ZthJC GADG081120221016ZTH
(A) Operation in this area IDM (°C/W)
is limited by R DS(on)
0.3 0.4
duty=0.5
102 tp=0.1 µs
tp=1 µs 10-1
0.1
tp=10 µs 0.2
101 RDS(on) max. 0.05
tp=100 µs
10-2
100 tp=1 ms RthJC = 0.4 °C/W
duty = ton / T
TJ=175 °C Single pulse
TC=25 °C ton
V(BR)DSS
single pulse 10-3
T
10-1
10-1 100 101 102 103 VDS (V) 10-7 10-6 10-5 10-4 10-3 10-2 tp (s)

Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 175 °C)

ID GADG091120221122OCH ID GADG081120221017OCH
(A) (A) 10V
VGS=12, 14, 16, 18, 20V VGS=12, 14,
16, 18, 20V
60 60
10V
8V

40 40

8V
6V
20 20

6V 4V
0 0
0 2 4 6 8 VDS (V) 0 2 4 6 8 VDS (V)

Figure 5. Typical transfer characteristics Figure 6. Total power dissipation

ID GADG081120221017TCH PTOT GADG081120221018PDT

(A) (W)

VDS =8V
60 300
TJ = 175 °C

40 200
TJ=175°C

20 100
TJ=25°C

0 0
0 4 8 12 VGS (V) 0 50 100 150 TC (°C)

DS14137 - Rev 1 page 5/14

 SCT025H120G3AG
Electrical characteristics (curves)

Figure 7. Typical gate charge characteristics Figure 8. Typical capacitance characteristics

VGS GADG081120221030GCGE C GADG081120221029OCH

(V) (pF)

VDD= 800 V,ID= 25 A

15
CISS
103
10

5
102 COSS

0 f= 1MHz

CRSS
-5 101
0 20 40 60 Qg (nC) 10-1 100 101 102 VDS (V)

Figure 9. Typical switching energy vs Rg Figure 10. Typical switching energy vs supply voltage

E GADG081120221033SLG E GADG081120221032SLC
(µJ) VDD=800V, ID=25A, VGS=-5 to 18V (µJ) ID=25A, RG=15Ω, VGS=-5 to 18V

Etot
1000 Etot
600

800
Eon
400
Eon
600
Eoff

Eoff 200
400

200 0
10 14 18 22 26 RG (Ω) 100 300 500 700 VDD (V)

Figure 11. Typical switching energy vs drain current Figure 12. Typical switching energy vs temperature

E GADG081120221031SLC E GADG081120221033SLT
(µJ) VDD=800V, RG=15Ω, VGS=-5 to 18V (µJ) VDD=800V, ID=25A, RG=15Ω, VGS=-5 to 18V

Etot
Etot
1500 600

Eon
1000 400
Eoff

Eon
500 200
Eoff

0 0
0 20 40 60 ID (A) 0 50 100 150 TJ (°C)

DS14137 - Rev 1 page 6/14

 SCT025H120G3AG
Electrical characteristics (curves)

Figure 13. Normalized breakdown voltage vs temperature Figure 14. Normalized gate threshold vs temperature

V(BR)DSS GADG091120221343NVBR VGS(th) GADG081120221022NGE

(norm.) (norm.)

1.04 1.4
ID = 1 mA ID = 5 mA

1.02 1.2

1.00 1.0

0.98 0.8

0.96 0.6

0.94 0.4
-75 -25 25 75 125 175 TJ (°C) -75 -25 25 75 125 175 TJ (°C)

Figure 16. Typical reverse conduction characteristics

Figure 15. Normalized on-resistance vs temperature
(TJ = 25 °C)
RDS(on) GADG081120221022RON
ID GADG081120221024OCH
(norm.)
(A)
-10
2.0 VGS = 5 V
-20
VGS = 18 V
1.5 -30

-40
1.0
VGS = 0 V
-50

0.5 -60

-70
VGS = 18V
0.0
-75 -25 25 75 125 175 TJ (°C) -80
-6 -5 -4 -3 -2 -1 VDS(V)

Figure 17. Typical reverse conduction characteristics (TJ = 175 °C)

ID GADG081120221026VEC
(A)
-10
VGS = 5 V
-20

-30

-40
VGS = 0 V
-50

-60
VGS = 18 V
-70
-80
-6 -5 -4 -3 -2 -1 VDS(V)

DS14137 - Rev 1 page 7/14

 SCT025H120G3AG
Package information

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

3.1 H²PAK-7 package information

Figure 18. H²PAK-7 package outline

DM00249216_4

DS14137 - Rev 1 page 8/14

 SCT025H120G3AG
H²PAK-7 package information

Table 8. H²PAK-7 package mechanical data

mm
Dim.
Min. Max.

A 4.30 4.80
A1 0.03 0.20
C 1.17 1.37
e 2.34 2.74
e1 4.88 5.28
e2 7.42 7.82
E 0.45 0.60
F 0.50 0.70
H 10.00 10.40
H1 7.40 7.60
L 14.75 15.25
L1 1.27 1.40
L2 4.35 4.95
L3 6.85 7.25
M 1.90 2.50
R 0.20 0.60
V 0° 8°

Figure 19. H²PAK-7 recommended footprint

footprint_DM00249216_4

Note: Dimensions are in mm.

DS14137 - Rev 1 page 9/14

 SCT025H120G3AG
Packing information

3.2 Packing information

Figure 20. Tape outline

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B0

A0 P1 D1

User direction of feed

Bending radius
User direction of feed

AM08852v2

Figure 21. Reel outline

T
REEL DIMENSIONS

40 mm min.

Access hole

At slot location

A N

G measured
Tape slot
In core for
Full radius At hub
Tape start

DS14137 - Rev 1 page 10/14

 SCT025H120G3AG
Packing information

Table 9. Tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS14137 - Rev 1 page 11/14

 SCT025H120G3AG

Revision history

Table 10. Document revision history

Date Revision Changes

28-Nov-2022 1 First release.

DS14137 - Rev 1 page 12/14

 SCT025H120G3AG
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

DS14137 - Rev 1 page 13/14

 SCT025H120G3AG

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DS14137 - Rev 1 page 14/14