Chapter 5
Chapter 5
Prof.Dr.Beire GNL
p n junction
The p-n junction is the basic element of all bipolar
devices. Its main electrical property is that it
rectifies (allow current to flow easily in one
direction only).The p-n junction is often just
called a DIODE. Applications;
>photodiode, light sensitive diode,
>LED- ligth emitting diode,
>varactor diode-variable capacitance diode
1)
Surface states
To overcome these surface states problems
p n junction
p-type
n-type
EC
E
EC
Ef
E
Ef
EV
EV
EC
E
p-type
n-type
EC
Ef
E
Ef
EV
EV
n-type
+++++
+++++
+++++
+++++
+++++
+++++
+++++
+++++
---------------------------------
p-type
Metallurgical
junction
Electron
Movement
++++
++++
++++
Fixed positive
space-charge
----------
Fixed negative
space-charge
Ohmic
end-contact
p n junction
Lots of electrons on the left hand side of the
junction want to diffuse to the right and lots of
holes on the right hand side of the junction want
to move to the left.
The donors and acceptors fixed,dont move
(unless you heat up semiconductors, so they can
diffuse) because they are elements (such as
arsenic and boron) which are incorporated to
lattice.
However, the electrons and holes that come from
them are free to move.
p-type
EC
n-type
Electron Drift
Electron Diffusion
Neutral p-region
EC
Ef
Ef
EV
Hole Diffussion
Neutral n-region
EV
Hole Drift
Depletion region
dp
J p q p pEx qD p
0 (2)
dx
where
p kT
1 dEi
Ex
Dp
( Einstein relation)
q dx
q
Proof
Jp
dEi
dp
p( p
kT
)0
dx
dx
p ni exp(
J p p p
Ei E f
dE f
dx
kT
0
we conclude that
(3)
dE f
dp
p dEi
)
)
dx
kT dx
dx
(4)
dE f
dx
the Fermi Level is a CONSTANT at equilibrium.
dE f
J n nn
0 (5)
dx
Proof
The drift and diffusion currents are flowing all the
time. But, in thermal equilibrium, the net current
flow is zero since the currents oppose each other.
Under non-equilibrium condition, one of the
current flow mechanism is going to dominate
over the other, resulting a net current flow.
The electrons that want to diffuse from the ntype layer to the p-layer have potential barier.
qVbi
Electron energy is positive upwards in the energy level
diagrams, so electron potentials are going to be measured
positive downwards.
The hole energies and potentials are of course positive in
the opposite directions to the electrons
Electron energy
EC
Ei
Ef
qVbi
qV p
qVn
EV
EC
Ef
Ei
EV
Depletion region
Electron potential
p-type
qV p ( Ei E f ) (1)
Vp
kT
NA
ln
q
ni
Ei E f
p ni exp
kT
(2)
Similarly for Vn
Vn
kT
ND
ln
q
ni
(3)
Neutral
p-region
Current Mechanisms,
Mechanisms
----
+++
----
+++
----
+++
Neutral
n-region
Field Direction
Hole energuy
Electron energy
Electron Drift
Electron Diffusion
EC
Ef
EV
Hole Diffussion
Hole Drift
n p junction at equilibrium
DR
Neutral
+++
----
n-region
+++
----
Neutral
p-region
Electron Drift
Hole energuy
Electron energy
+++
---Field Direction
Electron Diffusion
EC
Ef
EV
Hole Diffussion
Hole Drift
Difusion :
When electrons and holes are diffusing from high
concentration region to the low concentration region they
both have a potential barrier. However, in drift case of
minority carriers there is no potential barrier.
Built in potential ;
kT
N AND
Vbi
ln
2
q
ni
At fixed T , Vbi is determined by the number of N A and N D atoms.
----
+++
----
+++
At equilibrium, there is
no bias, i.e. no applied
voltage.
n-type
----
+++
area Vbi
----
Electric field
Charge density
+++
xn
xp
Depletion
the
the
Em
qVbi
Potential
dVn
Ev
dx
----
+++
----
p-type
+++
+++
Em
x
-------
Electric field
Charge density
n-type
area Vbi
x
Potential
Depletion
Field direction
Abrupt junction
Charge density
p-type
----
+++
----
+++
n-type
+++
----
xp
+++
N A x p N D xn
---Depletion
Region
xn
when N A N D xn x p
Abrupt junction
xn and xp is the width of the depletion layer on the n-side
and p-side of the junction, respectively.
x p xn , W x p
N A . x p N D . xn
W = total depletion
region
Abrupt junction
When N A N D xn x p
W xn
1
xn
ND
2 SiVbi N A N D
q( N A N D )
1
xp
NA
2 SiVbi N A N D
q( N A N D )
Abrupt junction
For equal doping densities W xn x p
Total depletion layer width , W
1
1
W (
)
NA
ND
2 SiVbi N A N D
q( N A N D )
2 SiVbi ( N A N D )
qN A N D
Abrupt junction
Si o r
----
p-type
+++
+++
+++
+++
+++
+++
----
n-type
N A N D
Depletion
Region
xp
xn
x p can be neglected
1
W xn
ND
2 SiVbi N A N D
1
q N A ND ND
2 SiVbi N A N D
qN A
neglegted
since NA>>ND
2 SiVbi
qN D
+++
Charge density
p-type
-x direction
n-type
Electric field
+++
-
area Vbi
Electric field
+++
Em
Potential
qVbi
x
xn
xp
forward bias
reverse bias
Reverse Bias
Vb
I0
Forward Bias
V(voltage)
Vb ; Breakdown voltage
I0 ; Reverse saturation current
Ec
-- ++ n
-- ++
qVbi
Ec
Ev
- +
- +
Vbi
Reverse Bias
+
p --n
qVbi VF
Potential Energy
Ev
Forward Bias
+
-
++
++
Ec
Ev
q Vbi Vr
Vbi VR
Vbi VF
VF forward voltage
VR reverse voltage
When a voltage is applied to a diode , bands move
and the behaviour of the bands with applied
forward and reverse fields are shown in previous
diagram.
Forward Bias
Junction potential reduced
Enhanced hole diffusion from p-side to n-side compared
with the equilibrium case.
Enhanced electron diffusion from n-side to p-side compared
with the equilibrium case.
Drift current flow is similar to the equilibrium case.
Overall, a large diffusion current is able to flow.
Mnemonic. Connect positive terminal to p-side for forward
bias.
Drift current is very similar to that of the equilibrium case.
This current is due to the minority carriers on each side of
the junction and the movement minority carriers is due to
the built in field accross the depletion region.
Reverse Bias
Carrier Density
- +
- +
n
pn
np
pno
npo
n. p n
2
i
n. p n
2
i
(1)
n po . p po n p type material
(2)
2
i
2
i
kT p po
qVbi
Vbi
ln
p po pno exp
q
pno
kT
(3)
n po . p po n
2
i
kT nno
qVbi
Vbi
ln
nno n po exp
q n po
kT
(4)
Equations (3) and (4) still valid but you should drop (0)
subscript and change Vbi with
i.
ii.
VF : forward voltage
VR : reverse voltage
With these biases, the carrier densities change from equilibrium
carrier densities to non- equilibrium carrier densities.
pp
q (Vbi VF )
pn exp
kT
kT
nn nno
p p p po
Non equilibrium electron concentration in n-type when a
forward bias is applied ,
q (Vbi VF )
nn n p exp
non-equilibrium.
kT
nn nno
q (Vbi VF )
nno n p
(5)
kT
qVbi
nno n po exp
kT
(6)
kT
kT
qVF
n p n po exp
and subtracting n po from both sides
kT
qV
n p n po n po exp
1 n
kT
Similarly ,
qV
pn pno pno exp
1 p the non-equilibrium
kT
point A n p n po
point B pn pno
- +
- +
ppo
nno
B
A
pno
npo
lp
ln
p (l p ) n(0) exp
l p
Ln
ln
n(ln ) p (0) exp
L
p
ln
p (ln ) p (0) exp( )
Lp
point A n p n po
n(l p ) n(0)exp(
lp
Ln
qV
n(0) n po exp( ) 1
kT
qV
p (0) pno exp
1
kT
Similarly by means of
forward biasing a p-n
junction,
the
majority
electrons are injected from
right to left across the
Depletion Region. These
injected electrons become
minorities at the Depletion
Region edge on the p-side,
and they recombine with
the majority holes. When
they move into the neutral
p-side, the number of
injected excess electrons
decreases exponentially.
n (l p ) n (0) exp(
lp
Ln
lp
qV
n (l p ) n po exp( ) 1 exp( )
kT
Ln
l p
1 exp
Ln
qDn n po
qV
J n ( l p 0)
exp 1 Minus sign shows that electron current
Ln
kT
density is in opposite direction to increasing l p .That is in the positive x direction.
Similarly for holes;
dp qD p pno
J p (ln 0) qD p
dx
Lp
qV
exp kT 1
Dn n po
Ln
D p pno
qV
exp
1
Lp
kT
Dn n po
J Total q
Ln
D p pno
qV
qV
exp
1 J o exp
1
L p
kT
kT
multiplying by area ;
qV
I I o exp
1
kT
This equation is valid for both forward and reverse biases; just change the
sign of V.
qV
I I o exp
1
kT
I Io
Current
Forward Bias
VB
I0
Voltage
VB ; Breakdown voltage
Reverse Bias
Current density
Ohmic contact
J total J n J p
Jn
Jp
lp=0
ln=0
Carrier density
npo
pno
pn
Current density
np
J total J n J p
Jn
Jp
lp=0
ln=0
Vb
I0
V(voltage)
VB ; Breakdown voltage
I0 ; Reverse saturation current
Reverse Bias
Drift current
2)
Zener breakdown
Avalanche Breakdown
Avalanche breakdown mechanism occurs when
electrons and holes moving through the DR and
acquire sufficient energy from the electric field
to break a bond i.e. create electron-hole pairs by
colliding with atomic electrons within the
depletion region.
The newly created electrons and holes move in
opposite directions due to the electric field and
thereby add to the existing reverse bias current.
This is the most important breakdown
mechanism in p-n junction.
Depletion Capacitance
When a reverse bias is applied to p-n junction diode, the
depletion region width, W, increases. This cause an increase
in the number of the uncovered space charge in depletion
region.
Whereas when a forward bias is applied depletion region
width of the p-n junction diode decreases so the amount of
the uncovered space charge decreases as well.
So the p-n junction diode behaves as a device in which the
amount of charge in depletion region depends on the
voltage across the device. So it looks like a capacitor with a
capacitance.
Depletion Capacitance
Capacitance
in farads
Q
C
V
Charge stored in
coloumbs
Depletion Capacitance
Capacitance per unit area of a diode ;
F
CDEP Si
W cm 2
For one-sided abrupt junction; e.g. N A N D xn W xn
N A x p N D xn
C DEP
Si
W
Si
xn
2 SiVbi
qN D
xn
for N A N D
Si
2 Si (Vbi VR )
qN D
q Si N D
2(Vbi VR )
Depletion Capacitance
If one makes C - V measurements and draw 1/C 2
against the voltage VR ; obtain built-in voltage and
doping density of low-doped side of the diode from
the intercept and slope.
2(Vbi VR )
1
2
C
q Si N D
2
slope
q Si N D
kT
N AND
Vbi
ln(
)
2
q
ni
Depletion Capacitance