Transistor Biasing & Thermal Stability: Prepared By: Mr. Gaurav Verma Asst. Prof. ECE Dept. Niec
Transistor Biasing & Thermal Stability: Prepared By: Mr. Gaurav Verma Asst. Prof. ECE Dept. Niec
Transistor Biasing & Thermal Stability: Prepared By: Mr. Gaurav Verma Asst. Prof. ECE Dept. Niec
&
Thermal Stability
Prepared By :
Gate
Gain medium
Drain
Emitter Collector
Ion Channel
Base
Gain = 300
http://www.computerhistory.org/semiconductor/timeline.html#1940s
Aim of this chapter
W W +
+ - -
Vappl > 0 Vappl < 0
Allow holes to jump over barrier Remove holes and electrons away
into N region as minority carriers from depletion region
I I
V V
So if we combine these by
fusing their terminals…
P N N P
W W +
+ - -
Vappl > 0 Vappl < 0
IE IC
- + IB
IE = I B + IC ………(KCL)
GAIN
CONFIG
ECE 663
Bipolar Junction Transistors:
+
Basics
-
IE IC
- + IB
ECE 663
Bipolar Junction Transistors:
Basics
ECE 663
BJT Fabrication
ECE 663
PNP BJT Electrostatics
ECE 663
PNP BJT Electrostatics
ECE 663
NPN Transistor Band
Diagram: Equilibrium
ECE 663
PNP Transistor Active Bias
V >0 EB
Mode
VCB > 0
Few recombine
in the base
P+ N P
pB(x)
nE(x’) nC0
pB0
nE0
nC(x’’)
ECE 663
PNP Physical Currents
ECE 663
PNP transistor amplifier
action
IN (small)
OUT (large)
IB
IEp IEp
IE IEp IEn Can we make the emitter
see holes alone?
0 1
ECE 663
Base Transport Factor
IE IC
IEp ICp
C
E IEn ICn
IB
ICp
T
IEp
ECE 663
Common Base DC current gain
- PNP
Common Base – Active Bias
mode: IC = DCIE + ICB0
ICp = TIEp
DC = T
= TIE
IC = TIE + ICn
ECE 663
Common Emitter DC current
gain - PNP
Common Emitter – Active Bias
mode: IE = bDCIB + ICE0
bDC =
IC = DCIE + ICB0 DC /(1-DC)
= DC(IC + IB) + ICB0 GAIN !!
IC
IB
IC = DCIB + ICB0
1-DC
IE
ECE 663
Common Emitter DC current gain - PNP
T
b dc
1 T
ECE 663
PNP BJT Common Emitter Characteristic
ECE 663
INTRODUCTION
The BJT as a circuit element operates various circuits with many major
and minor modifications.
For the analysis of such circuits, we obtain the various conditions for
proper operation of the device, and also determine the projected range of
operation of the device.
A detailed study of the device in a two-port mode simplifies the circuit
analysis of the device to a large extent.
Thus, we calculate the various parameters of the devices’ performance,
namely voltage gain, current gain, input impedance, and output
impedance.
The frequency response of the device is dealt with in detail, and a study
of the various regions of operation in the frequency scale is also explained.
Finally, we will discuss the various configurations of the device and take
a look into the high-frequency operation of the device and its performance
in those regions.
Proper Transistor Biasing
• For a transistor to function properly as an
amplifier, the emitter-base junction must be
forward-biased and the collector-base
junction must be reverse-biased.
• The common connection for the voltage
sources are at the base lead of the transistor.
• The emitter-base supply voltage is designated
VEE and the collector-base supply voltage is
designated VCC.
• For silicon, the barrier potential for both EB
and CB junctions equals 0.7 V
Transistor Biasing
The proper flow of zero signal collector current and the maintenance
of proper collector emitter voltage during the passage of signal is
called transistor biasing.
30
WHY BIASING?
31
BIAS STABILITY
32
The DC Operating Point
For a transistor circuit to amplify it must be properly biased with dc
voltages. The dc operating point between saturation and cutoff is
called the Q-point. The goal is to set the Q-point such that that it
does not go into saturation or cutoff when an a ac signal is applied.
33
The Thermal Stability of Operating Point (SIco)
Stability Factor S:- The stability factor S, as the change of collector
current with respect to the reverse saturation current, keeping β and
VBE constant. This can be written as:
The Thermal Stability Factor : SIco
SIco = ∂Ic
∂Ico
Vbe, β
It may be noted that Lower is the value of SIco better is the stability
34
Various Biasing Circuits
35
The Fixed Bias Circuit
The Thermal Stability Factor : SIco
SIco = ∂Ic
15 V 15 V ∂Ico Vbe, β
General Equation of SIco Comes out to be
200 k RC 1k SIco ═ 1+β
Rb
1- β (∂Ib/∂IC)
C RC
B
Applying KVL through Base Circuit we can
Ib write, Ib Rb+ Vbe= Vcc
E
Diff w. r. t. IC, we get (∂Ib / ∂Ic) = 0
SIco= (1+β) is very large
Indicating high un-stability
36
Merits:
• It is simple to shift the operating point anywhere in the active region by
merely changing the base resistor (RB).
• A very small number of components are required.
Demerits:
• The collector current does not remain constant with variation in
temperature or power supply voltage. Therefore the operating point is
unstable.
• When the transistor is replaced with another one, considerable change in
the value of β can be expected. Due to this change the operating point will
shift.
• For small-signal transistors (e.g., not power transistors) with relatively high
values of β (i.e., between 100 and 200), this configuration will be prone to
thermal runaway. In particular, the stability factor, which is a measure of
the change in collector current with changes in reverse saturation current,
is approximately β+1. To ensure absolute stability of the amplifier, a
stability factor of less than 25 is preferred, and so small-signal transistors
have large stability factors.
37
Fixed bias with emitter resistor
38
Merits:
• The circuit has the tendency to stabilize operating point against
changes in temperature and β-value.
Demerits:
• As β-value is fixed for a given transistor, this relation can be satisfied
either by keeping RE very large, or making RB very low.
If RE is of large value, high VCC is necessary. This increases cost
as well as precautions necessary while handling.
If RB is low, a separate low voltage supply should be
used in the base circuit. Using two supplies of different
voltages is impractical.
• In addition to the above, RE causes ac feedback which reduces the
voltage gain of the amplifier.
Usage:
The feedback also increases the input impedance of the amplifier when
seen from the base, which can be advantageous. Due to the above
disadvantages, this type of biasing circuit is used only with careful
consideration of the trade-offs involved.
39
The Collector to Base Bias Circuit
VCC
This configuration employs negative
feedback to prevent thermal runaway and
RC stabilize the operating point. In this form of
biasing, the base resistor RF is connected to
the collector instead of connecting it to the
DC source Vcc. So any thermal runaway will
Ic induce a voltage drop across the Rc resistor
RF C that will throttle the transistor's base current.
Ib
B
+ V
BE EI
- E
40
Applying KVL through base circuit
we can write (Ib+ IC) RC + Ib Rf+ Vbe= Vcc
Diff. w. r. t. IC we get
(∂Ib / ∂Ic) = - RC / (Rf + RC)
Therefore, SIco ═ (1+ β)
1+ [βRC/(RC+ Rf)]
Which is less than (1+β), signifying better thermal stability
41
Merits:
• Circuit stabilizes the operating point against variations in temperature
and β (i.e. replacement of transistor)
Demerits:
• As β -value is fixed (and generally unknown) for a given transistor, this
relation can be satisfied either by keeping Rc fairly large or making Rf very
low.
If Rc is large, a high Vcc is necessary, which increases
cost as well as
precautions necessary while handling.
If Rf is low, the reverse bias of the collector–base region is
small, which limits the range of collector voltage swing that
leaves the transistor in active mode.
•The resistor Rf causes an AC feedback, reducing the voltage
gain of the amplifier. This undesirable effect is a trade-off for
greater Q-point stability.
Usage: The feedback also decreases the input impedance of the amplifier
as seen from the base, which can be advantageous. Due to the gain
reduction from feedback, this biasing form is used only when the trade-off
for stability is warranted.
42
The Potential Divider Bias Circuit
This is the most commonly used arrangement for biasing as it provide good bias
stability. In this arrangement the emitter resistance ‘RE’ provides stabilization. The
resistance ‘RE’ cause a voltage drop in a direction so as to reverse bias the emitter
junction. Since the emitter-base junction is to be forward biased, the base voltage
is obtained from R1-R2 network. The net forward bias across the emitter base
junction is equal to VB- dc voltage drop across ‘RE’. The base voltage is set by Vcc
and R1 and R2. The dc bias circuit is independent of transistor current gain. In case
of amplifier, to avoid the loss of ac signal, a capacitor of large capacitance is
connected across RE. The capacitor offers a very small reactance to ac signal and so
it passes through the condensor.
43
The Potential Divider Bias Circuit
VCC VCC
To find the stability of this circuit we have
IC
R1 RC to convert this circuit into its Thevenin’s
Equivalent circuit
Ib C
B
44
The Potential Divider Bias Circuit
Applying KVL through input base circuit
Thevenin
Equivalent Ckt we can write IbRTh + IE RE+ Vbe= VTh
Therefore, IbRTh + (IC+ Ib) RE+ VBE= VTh
VCC Diff. w. r. t. IC & rearranging we get
RC
(∂Ib / ∂Ic) = - RE / (RTh + RE)
IC
Therefore, 1 b
Ib
C
SIco
B
RE
1 b
RTh
RE RTh
E
+
_ VTh
IE RE This shows that SIco is inversely proportional to RE
and It is less than (1+β), signifying better thermal
stability
Self-bias Resistor
Thevenin
Equivalent Voltage
45
Merits:
• Operating point is almost independent of β variation.
• Operating point stabilized against shift in temperature.
Demerits:
• As β-value is fixed for a given transistor, this relation can be satisfied either
by keeping RE fairly large, or making R1||R2 very low.
If RE is of large value, high VCC is necessary. This increases
cost as well
as precautions necessary while handling.
If R1 || R2 is low, either R1 is low, or R2 is low, or both are
low. A low R1 raises VB closer to VC, reducing the available
swing in collector voltage, and limiting how large RC can be
made without driving the transistor out of active mode. A low
R2 lowers Vbe, reducing the allowed collector current.
Lowering both resistor values draws more current from the
power supply and lowers the input resistance of the amplifier
as seen from the base.
AC as well as DC feedback is caused by RE, which reduces
the AC voltage gain of the amplifier. A method to avoid AC
feedback while retaining DC feedback is discussed below.
Usage:
The circuit's stability and merits as above make it widely used for linear
circuits. 46
BIASING AND BIAS STABILITY
Biasing refers to the establishment of suitable dc values of different currents
and voltages of a transistor.
Through proper biasing, a desired quiescent operating point of the transistor
amplifier in the active region (linear region) of the characteristics is obtained.
The selection of a proper quiescent point generally depends on the following
factors:
(a) The amplitude of the signal to be handled by the amplifier and distortion
level in signal
(b) The load to which the amplifier is to work for a corresponding supply
voltage
The operating point of a transistor amplifier shifts mainly with changes in
temperature, since the transistor parameters — β, ICO and VBE (where the
symbols carry their usual meaning)—are functions of temperature.
Circuit Configurations
Fixed-bias circuit
Fixed bias with emitter resistance
Voltage-divider bias
Voltage-feedback biasing
BIASING AND BIAS STABILITY
Fixed-bias circuit
Base–emitter loop Collector–emitter loop
and
Collector–emitter loop
Self-bias circuit
Fig. -1
Transistor Biasing: Base Biasing
• A more practical way to provide
base bias is to use one power
supply.
VCC - VBE
IB =
RB
IC bdc x IB
For every value of collector current, IC, the corresponding value of VCE can be
found by examining the dc load line.
Fig. 1
Transistor Biasing
Midpoint Bias
• Without an ac signal applied to a transistor, specific values of
IC and VCE exist at a specific point on a dc load line
• This specific point is called the Q point (quiescent currents
and voltages with no ac input signal)
• An amplifier is biased such that the Q point is near the center
of dc load line
– ICQ = ½ IC(sat)
– VCEQ = ½ VCC
• Base bias provides a very unstable Q point, because IC and VCE
are greatly affected by any change in the transistor’s beta
value
Transistor Biasing
Fig. 2 illustrates a dc load line
showing the end points IC (sat) and
VCE (off), as well as the Q point
values ICQ and VCEQ.
Fig. 2
Base Bias – Example 1
• Solve for IB, IC and VCE
• Construct a dc load line showing the values of
IC(sat), VCE(off), ICQ and VCEQ
Base Bias – Example 2
• Solve for IB, IC and VCE
• Construct a dc load line
showing the values of
IC(sat), VCE(off), ICQ and
VCEQ
28-6: Transistor Biasing
The most popular way to bias a transistor is
with voltage-divider bias.
R2
VB = X VCC
R1 + R2
VE = VB - VBE
Fig. 28-18
I E IC
Voltage Divider Bias – Example
• Solve for VB, VE, IE, IC, VC and VCE
• Construct a dc load line showing the values of
IC(sat), VCE(off), ICQ and VCEQ
28-6: Transistor Biasing
Fig. 28-19
Transistor Biasing
Both positive and negative power
supplies are available
Fig.
Emitter Bias – Example
• Solve for IE, and VC
CALCULATION OF STABILITY
FACTORS
Stability Factor S:- The stability factor S, as the change of collector current
with respect to the reverse saturation current, keeping β and VBE constant. This
can be written as:
Or,
Stability Factor S’:- The variation of IC with VBE is given by the stability factor
S defined by the partial derivative:
Heat Flow
Case
TC
TS Heat Sink
TA Air