Theoretical Analysis of Intermediate Band Solar Cells (Ibsc) Amir Mehdipour 080T801T

Theoretical analysis of
Intermediate Band Solar

cells(IBSc)
Amir Mehdipour
080T801T
 Intermediate band solar cell
introduction
 Numerical Simulation of InAs/GaAs
QDs IBSc
 Efficiency calculation
 Conclusion
More utilization of solar spectrum
Formation of three Minibands
observed for QD of 9nm sides length.
The third one can be considered
merged with CB Effective
Eg=1.32eV
Second miniband has much more thickness than
first one
“t” values obtained from
simulation is used to calculate
energy levels inside
minibands.
  i( 0)  t  c1   c1 
      
( 0 ) 
 t  i  c2   c2 

 i   i( 0)  ti
1  1 
c   
2  1    r   c11s  r1   c21s  r1  d z 
1 1
c   
2 1
  ti 0 0 0 0 0     
    
  ti  i( 0)  ti 0 0 0 0  c 2   c 2 
 0  ti  i( 0)  ti 0 0 0  c  c 
  1   1 
 0 0  ti  i( 0)  ti 0 0  c0     c0 
   c 
 0 0 0  ti  i( 0)  ti 0  c1   1
 0 0 0 0  ti  i( 0)  ti  c2   c2 
    
 0 0 0 0 0  ti      
0.2160 0.0040
EH
0.2155
 4t1s 0.0035
First IB Width[eV]
0.2150
0.2145 0.0030
Energy[eV]
0.2140  1s( 0) 0.0025

0.2135
0.2130 0.0020
0.2125 EL
0.0015
0.2120 0 20 40 60 80 100
0 20 40 60 80 100
Number of Layer
Number of Layer
For big number of layers    1(s0)  2 t1s ~  1(s0 )  2 t1s

0.525
0.032
Second IB Width (eV)

0.520 0.030
0.515 0.028
Energy (eV)
0.026
0.510
Second IB 0.024
0.505 0.022
0.500 0.020
0.018
0.495 0.016
0.490 0.014
0 20 40 60 80 100 0 20 40 60 80 100
Number of Layer Number of Layers
d=10nm, weakly formation of Minibands,

First Miniband is very thin.
0.26 0.10
First IB Width (eV)

0.24 0.09
Energy (eV)
0.22 0.08
0.20 0.07
0.06
0.18
0.05
0.16
0 20 40 60 80 100 0 20 40 60 80 100
Number of Layers Number of layers
0.65 0.30
Second IB Width (eV)

0.28
0.60 0.26
Energy (eV)
0.55 0.24
0.22
0.50
0.20
0.45 0.18
0.40 0.16
0.14
0.35 0 20 40 60 80 100
0 20 40 60 80 100
Number of Layers Number of Layers
Effective inter dots coupling  Formation of thick

minibands
 The Method used based on detailed balance theory of Shockley
and Quisser
 Number of Particle flux emitted by a black body:
Eh
 2 E2
N ( El , Eh , T ,  )  3 2
hc 
El exp( E 

dE (per unit surface into a hemisphere)
) 1
 Assumptions: kT
i)Only radiative recombination
ii) Only one electron-hole pair generated per photon
ii) Constant quasi-Fermi potential for each band
iii) All photons with energy greater than any band gap in system are
absorbed.
iv) Every photon absorbed in the most favorable manner(with largest
threshold energy)
v) Full light concentration (46200 suns)
Transition Process Start Point El Ending Point Eh
VBCB E14 Infinity

VBIB1 E12 E12+Delta2+E23
VBIB2 E12+Delta2+E23=E24 E14
IB1CB E23+Delta1+E34=E24 E12
IB1IB2 E23 E23+Delta1+Delta2
IB2CB E34 E23+E34

 
J sc  q[ N ( El , Eh , Ts ,0)  N ( El , Eh , Tc ,  )]
Pout  J ( CV );
4
Pin  Ts ;
FFVoc J sc

P in
If considering just one miniband IB1, the
calculated efficiency was approximately 44.7%
With some assumptions of quasi-Fermi energies,
The best efficiency for presented solar cell
approximated 56.3%.
 To have best positioned Minibands QDs of 9nm
sides considered for the system of InAs/GaAs
 The simulation results and theoretical
expectations match well
 Formation of Minibands investigated
 Tight Band modeling allows us to estimate band
structure for any value of hopping factor
 Waves functions inside QDs interpreted
 Efficiency of presented Solar cell approximated
through detailed balance theory
 Calculation of quasi-Fermi levels through
continuity equation
 Calculation of absorption coefficients for
each transitions
 Strain consideration
 Considering other QDs shapes like pyramid
 Design an IBSc and analysis of efficiency
dependency to different geometrical
parameters.

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Theoretical analysis of

Intermediate Band Solar

0.2140  1s( 0) 0.0025

For big number of layers    1(s0)  2 t1s ~  1(s0 )  2 t1s

Second IB Width (eV)

d=10nm, weakly formation of Minibands,

First IB Width (eV)

Second IB Width (eV)

Effective inter dots coupling  Formation of thick

VBCB E14 Infinity

VBIB2 E12+Delta2+E23=E24 E14

IB1CB E23+Delta1+E34=E24 E12

IB1IB2 E23 E23+Delta1+Delta2

IB2CB E34 E23+E34

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