Chapter 9

Electronic Devices and Circuit Theory
Boylestad
FET Amplifiers
Chapter 8
Ch.8 Summary
Introduction
FETs provide:
• Excellent voltage gain
• High input impedance
• Low-power consumption
• Good frequency response
Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.8 Summary
FET Small-Signal Model
Transconductance: The ratio of a change in ID to

the corresponding change in VGS
• Transconductance is denoted gm and given by:

ΔID
gm 
ΔV GS
Ch.8 Summary
Geographical Determination of gm
Ch.8 Summary
Mathematical Definitions of gm
ΔID 2I  VGS 
gm  g m  DSS
ΔVGS 1  
VP  VP 
For VGS = 0 V
2I DSS  VGS  ID
g m0  g m  g m 0 1    g m0
VP  VP  IDSS
Ch.8 Summary
FET Impedence
Input impedance:
Zi   Ω
Output Impedance:
1 ΔVDS
Zo  rd  where rd  VGS  constant
y os ΔI D
yos= admittance parameter listed on FET spec sheets
Ch.8 Summary
FET AC Equivalent Circuit
Ch.8 Summary
Common-Source (CS) Fixed-Bias

The input is applied to the gate and
the output is taken from the drain
There is a 180 phase shift between

the circuit input and output
Ch.8 Summary
Calculations
Input impedance:
Z i  RG
Output impedance:
Zo  RD||rd
Z o  RD
rd 10 RD
Voltage gain:
Vo
Av   g m (rd ||RD )
Vi
Vo
Av    g m RD
Vi rd 10 RD
Ch.8 Summary
Common-Source (CS) Self-Bias
Bypassed Rs
This is a common-source amplifier
configuration, so the input is applied
to the gate and the output is taken
from the drain.
There is a 180 phase shift

between input and output.
Ch.8 Summary
Calculations
Input impedance:
Zi  RG
Output impedance:
Zo  rd ||RD
Zo  RD
rd 10 RD
Voltage gain:
Av  g m ( rd||RD )
Av  g m RD
rd 10 RD
Ch.8 Summary
Common-Source (CS) Self-Bias
Unbypassed Rs
Removing Cs affects
the gain of the circuit.
Ch.8 Summary
Calculations
Input impedance:
Zi  RG
Output impedance:
Z o  RD
rd 10 RD
Voltage gain:
Vo g m RD
Av  
Vi R  RS
1  g m RS  D
rd
V g R
Av  o   m D rd 10( RD RS )
Vi 1  g m RS
Ch.8 Summary
Common-Source (CS)
Voltage-Divider Bias
This is a common-source
amplifier configuration, so the
input is applied to the gate and
the output is taken from the
drain.
Ch.8 Summary
Impedances
Input impedance:
Zi  R1 ||R2
Output impedance:
Zo  rd ||RD
Z o  RD
rd 10 RD
Voltage gain:
Av  g m (rd ||RD )
Av  g m RD
rd 10 RD
Ch.8 Summary
Source Follower (Common-Drain)

In a common-drain amplifier
configuration, the input is applied
to the gate, but the output is taken
from the source.
There is no phase shift between

input and output.
Ch.8 Summary
Impedances
Input impedance:
Z i  RG
Output impedance:
1
Zo  rd ||RS ||
gm
1
Zo  RS || rd 10 RS
gm
Voltage gain:
Vo g m (rd ||RS ) Vo g m RS
Av   Av   rd 10
Vi 1  g m (rd ||RS ) Vi 1  g m RS
Ch.8 Summary
Common-Gate (CG) Circuit

The input is applied to the
source and the output is
taken from the drain.
There is no phase shift

Ch.8 Summary
Calculations
Input impedance:
 r  RD 
Zi  RS || d 
 1  g r
m d 
1
Z i  RS || r 10 RD
gm d
Output impedance:
Zo  RD ||rd
Z o  RD rd 10  RD 
 g m RD  r 
V
Voltage gain: Av  o   d 
Av  g m RD rd 10 RD
Vi  RD 
1  r 
 d 
Ch.8 Summary
D-Type MOSFET AC Equivalent
AC equivalent model for D-MOSFET is exactly the same as that

employed for JFET.
Ch.8 Summary
E-Type MOSFET AC Equivalent
gm and rd can be
found in the
specification sheet
for the FET.
Ch.8 Summary
Common-Source, Drain-Feedback
There is a 180 phase shift

Ch.8 Summary
Calculations
Input impedance:
RF  rd ||RD
Zi 
1  g m (rd ||RD )
RF
Zi  RF  rd ||RD ,rd 10 RD
1  g m RD
Output impedance:
Zo  RF ||rd ||R D
Z o  RD RF  rd ||RD ,rd 10 RD
Voltage gain: Av  g m (RF ||rd ||RD ) Av  g m RD RF  rd ||RD, rd 10 RD
Ch.8 Summary
Common-Source Voltage-Divider Bias
The input is applied to the gate and

the output is taken from the drain.
There is a 180º voltage phase

shift between input and output.
Ch.8 Summary
Calculations
Input impedance:
Z i R 1||R2
Output impedance:
Zo  rd ||RD
Z o  RD rd 10
Voltage gain: Av  g m (rd ||RD ) Av  g m RD rd 10 RD
Ch.8 Summary
Summary Table
Ch.8 Summary
Summary Table

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Electronic Devices and Circuit Theory

FET Small-Signal Model

Transconductance: The ratio of a change in ID to

• Transconductance is denoted gm and given by:

yos= admittance parameter listed on FET spec sheets

FET AC Equivalent Circuit

Common-Source (CS) Fixed-Bias

There is a 180 phase shift between

There is a 180 phase shift

Source Follower (Common-Drain)

There is no phase shift between

Common-Gate (CG) Circuit

There is no phase shift

D-Type MOSFET AC Equivalent

AC equivalent model for D-MOSFET is exactly the same as that

E-Type MOSFET AC Equivalent

There is a 180 phase shift

Voltage gain: Av  g m (RF ||rd ||RD ) Av  g m RD RF  rd ||RD, rd 10 RD

Common-Source Voltage-Divider Bias

The input is applied to the gate and

There is a 180º voltage phase

Voltage gain: Av  g m (rd ||RD ) Av  g m RD rd 10 RD

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