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    of 16

    PRINCE SR. SEC.

    SCHOOL

    Physics investigatory project


    Shivani Gautam
    Class-XII SCIENCE(MED)
    Table of content

    CERTIFICATE
    ACKNOWLEDGEMENT
    AIM
    INTRODUCTION
    TYPE OF SEMICONDUCTORS

    TYPES OF SEMICONDUCTOR DIADE

    P-N JUNCTION DIODE


    FORMATION DIPLETION AND POTENTIAL BIAS

    FORWARD AND REVERSE BAIS


    CERTIFICATE
    This is to certify that shivani of class XII has successfully completed the
    investigatory project on the topic “p-n junction diode“ under my guidance during
    the year 2022-2023 in the partial fulfillment of the physics practical examination
    conducted by CBSE.
    ACKNOWLEDMENT

    Would you like to express my guidance towards to my physics teacher MR


    MANISH SIR for his/her valuable guidance and nonstop support during this
    project. As well as I am grateful to our principal Mrs Poonam Sharma for
    providing me with the beautiful opportunity to work on this topic.
    I would also like to thank my parents and friends for encouraging me during the
    course of this project. Finally , I would like to thank the CBSE board for giving
    me this great opportunity to do this project.
    Saloni
    TABLE OF CONTENT

    CERTIFICATE
    ACKNOWLEGEMENT
    INTRODUCTION
    AIM
    INTRODUCTION
    TYPE OF SEMICONDUCTOR
    TYPE OF SEMICONDUCTOR DIODE

    P-N JUCTION DIODE


    FORMATION OF DEPLITION LAYER AND POTENTIAL BARRIER
    AIM
     To construct and study the application and working condition of a
    semiconducting diode.
    INTRODUCTION

    A diode is a two- terminal


    electronic component that
    conduct current primarly in one
    direction ( asymmetric
    conductance); it has low ( ideally
    zero) resistance in one direction,
    and high ( ideally infinite)
    resistance in the other.
    Semiconductor

    n-type p-type
    semico conduct
    nductor or
    Type of Semiconductor
     n-type - when a pentavalent impurity like phosphorous antimony
    arsenic is doped in pure germanium or (silicon) then the conductivity
    of crystal increase due to accesses of electron and such crystal is said
    to be n-type semiconductor. While the impurity atom are called donar
    atom.

     P-type – when a try valent impurity like aluminum indium boron


    gallium etc is doped pure germaninum and silicon then the
    conductivity of crystal increase due to defecency of electron such as
    crystal is said to be p-type conductor. While the impurity atom are
    acceptor
    Semiconductor diode

    p-n junction Thermal


    Photo diode
    diode diode

    PIN diode Schottky


    p-n junction diode
     A semiconductor having p type impurity at one and n-type impurity at the
    other end is known p-n junction diode. At which p-type and n-type
    semiconductor combine is called p-n junction.
    Formation of Depletion layer and Potential bias
    At the junction there is diffusion of charge carrier due to thermal
    agitation. Therefore some of electron on n region defuse to p
    region. Some charge carrier combine opposite charge to nutrilise
    each other thus near the junction there is excess of positive charge
    ions in n region and negative charge ions in p region.
    When the n type and p type layer attach together flow of electron
    from n to p resulting in third region between the two were no
    charge carrier are present. This region called dipletion region.
    FORWARD BIAS AND REVERSE BIAS

     In this arrangement the positive terminal of


    battery is connected to p end and negative
    terminal to an end of the crystal for that so an
    electric field establish to oppose internal field
    this arrangement is called forward bias
     In this arrangement the positive terminal of
    battery is connected to and end and negative
    terminal p end so the electric field is establish to
    support the internal field this arrangement is
    called reverse bias
    CHARACTERSTICS

    Avalanalche – If the reverse bias is made


    sufficient high the covalent bond near the
    junction breakdown. Realises freely
    electrons and holes these electrons and
    holes gain sufficient energy to break othe
    covalent bond. Thus large number of
    holes get free result in increase in high
    value current. This is called avalanalche
    breakdown and may damage the junction.
    Applications
     Radio demolation- The use of diode was the demodulation of
    emplitude modulated radio broadcaste which generate sound
    waves via audio speaker.
     Power conversion- Rectifier are constructed from diode where they
    are used to convert alternative current into direct current .
    Automotive alternator are common example.
     Reverse voltage protection- Since most of electronic circuit can be
    damage when the polarity of there power supply input are reverse .
    The diode used to protect agains such situation this is reverse
    volatage protection.
    Biblography
     N.C.E.R.T TEXTBOOK
     Examidea.com
     quoro.com
     Wikipidea.com
     Lakhmeer singh manjeet kaur guide.
     Vedantu.com

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