Title:Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer

Abstract:Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunneling microscopy and spectroscopy. In the twisted bilayer, there is a twisted angle between the adjacent two layers. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced low-energy van Hove singularities (VHSs) in their spectra. Below the VHSs, the observed Landau level quantization in the twisted bilayer is identical to that of massless Dirac fermion in graphene monolayer with the Fermi velocity vF = 1.03 106 m/s, which indicates that the Fermi velocity of the twisted bilayer is not reduced. In the twisted trilayer, we directly observe Landau quantization of massive Dirac fermion with a sizable band gap 105 meV, which is similar to the expected Landau quantization in Bernal graphene bilayer with a moderate electric field.