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Kondo scattering in underdoped Nd1-xSrxNiO2 infinite-layer superconducting thin films
Authors:
T. N. Shao,
Z. T. Zhang,
Y. J. Qiao,
Q. Zhao,
H. W. Liu,
X. X. Chen,
W. M. Jiang,
C. L. Yao,
X. Y. Chen,
M. H. Chen,
R. F. Dou,
C. M. Xiong,
G. M. Zhang,
Y. -F. Yang,
J. C. Nie
Abstract:
The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal…
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The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal and Hall resistivities are observed in the underdoped Nd1-xSrxNiO2 samples before the superconducting transition. A linear scaling behavior $σ_{xy}^{AHE}\simσ_{xx}$ between anomalous Hall conductivity $σ_{xy}^{AHE}$ and conductivity $σ_{xx}$ is revealed, verifying the dominant Kondo scattering at low temperature. The effect of weak (anti-)localization is found to be secondary. Our experiments can help clarifying the basic physics in the underdoped Nd1-xSrxNiO2 infinite-layer thin films.
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Submitted 13 September, 2022;
originally announced September 2022.
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Mapping electronic states of dual-parallel and symmetric zigzag grain boundaries of graphene on highly oriented pyrolytic graphite
Authors:
Jun Ma,
Xiaying Li,
Longjing Yin,
Wenxiao Wang,
Qi Sun,
Yu Yang,
Ping Zhang,
Jiacai Nie,
Changmin Xiong,
Ruifen Dou
Abstract:
The grain boundaries (GBs) of a graphene surface were extensively studied because GBs with specific defect configurations result in the formation of new curved structures, which can be treated as new carbon allotropes. We studied the structures and electronic spectra of two periodic GBs in graphene on highly oriented pyrolytic graphite (HOPG) surfaces using scanning tunneling microscopy and spectr…
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The grain boundaries (GBs) of a graphene surface were extensively studied because GBs with specific defect configurations result in the formation of new curved structures, which can be treated as new carbon allotropes. We studied the structures and electronic spectra of two periodic GBs in graphene on highly oriented pyrolytic graphite (HOPG) surfaces using scanning tunneling microscopy and spectroscopy (STM/S). Our results demonstrated that a GB consisting of dual parallel periodic dislocation cores of pentagonal-heptagonal (5-7) carbon rings gives rise to an enhanced localized state at 0.45 eV above the Dirac point in graphene surfaces, which is attributed to van Hove singularities (VHSs). Moreover, the energy positions of the localized states are varied between 0.40 and 0.47 eV depending on the site and eventually decayed to 0.36 eV. The variation of the energy positions is induced by two parallel GBs because of the higher electron density at the GB as a defect center and the lower electron away from the GB. Another periodic GB with a symmetric zigzag structural feature induced VHSs at -0.038 and 0.12 eV near the Fermi level. Moreover, intervalley scattering was observed on both these GBs. This means that carrier concentration and thus, the conductance around the periodic GBs can be significantly enhanced by localized density of states. This finding suggests that graphene with a properly embedded ordered GB is promising for improving the performance of graphene-based electronic devices.
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Submitted 28 September, 2017;
originally announced September 2017.
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Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer
Authors:
Wen-Xiao Wang,
Long-Jing Yin,
Jia-Bin Qiao,
Tuocheng Cai,
Si-Yu Li,
Rui-Fen Dou,
Jia-Cai Nie,
Xiaosong Wu,
Lin He
Abstract:
The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially…
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The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.
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Submitted 23 May, 2015;
originally announced May 2015.
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Landau Quantization and Fermi Velocity Renormalization in Twisted Graphene Bilayers
Authors:
Long-Jing Yin,
Jia-Bin Qiao,
Wei-Jie Zuo,
Wei Yan,
Rui Xu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two…
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Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two pronounced low-energy van Hove singularities (VHSs) in the STS spectra. We demonstrate that there is a large range of values for the interlayer interaction in different twisted bilayers. Below the VHSs, the observed Landau quantization in the twisted bilayers is identical to that of massless Dirac fermions in graphene monolayer, which allows us to measure the Fermi velocity directly. Our result indicates that the Fermi velocity of the twisted bilayers depends remarkably on both the twisted angles and the interlayer coupling strengths. This removes the discrepancy about the Fermi velocity renormalization in the twisted bilayers and provides a consistent interpretation of all current data.
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Submitted 18 April, 2015;
originally announced April 2015.
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Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer
Authors:
Long-Jing Yin,
Jia-Bin Qiao,
Wei Yan,
Rui Xu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced lo…
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Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced low-energy van Hove singularities (VHSs) in their spectra. Below the VHSs, the observed Landau level quantization in the twisted bilayer is identical to that of massless Dirac fermion in graphene monolayer. Our result demonstrates that both the VHSs and Fermi velocity of the twisted bilayer depends remarkably on the twist angle and the interlayer coupling strength. In the twisted trilayer, we directly observe Landau quantization of massive Dirac fermion with a sizable band gap 105 meV, which results in valley (layer) polarization of the lowest Landau levels. Such a result is similar to the expected Landau quantization in Bernal graphene bilayer with a moderate electric field.
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Submitted 8 January, 2015; v1 submitted 7 October, 2014;
originally announced October 2014.
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Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces
Authors:
Yin-Long Han,
Sheng-Chun Shen,
Jie You,
Hai-Ou Li,
Zhong-Zhong Luo,
Cheng-Jian Li,
Guo-Liang Qu,
Chang-Min Xiong,
Rui-Fen Dou,
Lin He,
Donald G Naugle,
Guo-Ping Guo,
Jia-Cai Nie
Abstract:
Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperatu…
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Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.
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Submitted 23 September, 2014; v1 submitted 20 September, 2014;
originally announced September 2014.
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The Tip-Induced Twisted Bilayer Graphene Superlattice on HOPG: Capillary Attraction Effect
Authors:
Long Jing Yin,
Wen Xiao Wang,
Ke Ke Feng,
Rui-Fen Dou,
Jia-Cai Nie
Abstract:
We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gap…
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We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gaphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, eletrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed in details to understand the fromation mechnism of graphen superlattice induced by the STM tip. Especially, the capillary force is the key role in manipulating the graphite surface sheet in the hunmidity condition. Our approach may provides a simple and feasible route to prepare the controllable superlattices and graphene nanoribbons but also replenish and find down the theory of generation of graphene superlattice on HOPG surface by the tip.
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Submitted 5 May, 2014;
originally announced May 2014.
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Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers
Authors:
Wei Yan,
Lan Meng,
Mengxi Liu,
Jia-Bin Qiao,
Zhao-Dong Chu,
Rui-Fen Dou,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sub…
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The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphene bilayers studied by scanning tunneling microscopy and spectroscopy. Our experiment demonstrates that twist-induced van Hove singularities are ubiquitously present for rotation angles theta less than about 3.5o, corresponding to moiré-pattern periods D longer than 4 nm. However, they totally vanish for theta > 5.5o (D < 2.5 nm). Such a behavior indicates that the continuum models, which capture moiré-pattern periodicity more accurately at small rotation angles, are no longer applicable at large rotation angles.
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Submitted 16 April, 2014;
originally announced April 2014.
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Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries
Authors:
Long-Jing Yin,
Jia-Bin Qiao,
Wen-Xiao Wang,
Zhao-Dong Chu,
Kai Fen Zhang,
Rui-Fen Dou,
Chun Lei Gao,
Jin-Feng Jia,
Jia-Cai Nie,
Lin He
Abstract:
Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectrosc…
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Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.
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Submitted 9 April, 2014; v1 submitted 6 December, 2013;
originally announced December 2013.
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Building the Chessboard-like Supramolecular Structure on Au (111) Surfaces
Authors:
Ruifen Dou,
Yu Yang,
Ping Zhang,
Dingyong Zhong,
Harald Fuchs,
Yue Wang,
Lifeng Chi
Abstract:
We investigate an anthracene derivative, 3(5)-(9-anthryl) pyrazole (ANP), self-assembled on the Au (111) surface by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. A chessboard-like network structure composed of ANP molecules is found, covering the whole Au (111) substrate. Our STM results and DFT calculations reveal that the formation of chessboard-l…
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We investigate an anthracene derivative, 3(5)-(9-anthryl) pyrazole (ANP), self-assembled on the Au (111) surface by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. A chessboard-like network structure composed of ANP molecules is found, covering the whole Au (111) substrate. Our STM results and DFT calculations reveal that the formation of chessboard-like networks originates from a basic unit cell, a tetramer structure, which is formed by four ANP molecules connected through C-H-N hydrogen-bonds. The hydrogen bonds inside each tetramer and the molecular adsorption interaction are fundamentally important in providing a driving force for formation of the supramolecular networks.
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Submitted 28 June, 2013;
originally announced June 2013.
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Hierarchy of Graphene Wrinkles Induced by Thermal Strain Engineering
Authors:
Lan Meng,
Ying Su,
Dechao Geng,
Gui Yu,
Yunqi Liu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y obse…
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Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y observed in our experiment by considering both bending energy and stretching energy of the graphene flakes. The prefactor k in the equation is determined to be about 55 nm, which is independent of the size of the graphene flakes. Our experimental result indicates that the classical membrane behavior of graphene persists down to about 100 nm of the wrinkling wavelength.
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Submitted 20 December, 2013; v1 submitted 2 June, 2013;
originally announced June 2013.
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Strain Induced One-Dimensional Landau-Level Quantization in Corrugated Graphene
Authors:
Lan Meng,
Wen-Yu He,
Hong Zheng,
Mengxi Liu,
Hui Yan,
Wei Yan,
Zhao-Dong Chu,
Keke Bai,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi v…
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Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi velocities will form when the effective pseudomagnetic flux per ripple is larger than the flux quantum. Our analysis indicates that the effective gauge field of the ripples results in zero-energy flat bands in one direction but not in another. The Fermi velocities in the perpendicular direction of the ripples are not renormalized at all. The condition to generate the ripples is also discussed according to classical thin-film elasticity theory.
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Submitted 12 April, 2013; v1 submitted 5 December, 2012;
originally announced December 2012.
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Evidence for Superlattice Dirac Points and Space-dependent Fermi Velocity in Corrugated Graphene Monolayer
Authors:
Hui Yan,
Zhao-Dong Chu,
Wei Yan,
Mengxi Liu,
Lan Meng,
Mudan Yang,
Yide Fan,
Jiang Wang,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene g…
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Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene give rise to weak one-dimensional (1D) electronic potentials and thereby lead to the emergence of the superlattice Dirac points. The position of the superlattice Dirac point is space-dependent and shows a wide distribution of values. We demonstrated that the space-dependent superlattice Dirac points is closely related to the space-dependent Fermi velocity, which may arise from the effect of the local strain and the strong electron-electron interaction in the corrugated graphene.
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Submitted 6 November, 2012; v1 submitted 8 September, 2012;
originally announced September 2012.
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Controlling the Interlayer Coupling of Twisted Bilayer Graphene
Authors:
Lan Meng,
Wei Yan,
Zhao-Dong Chu,
Yanfeng Zhang,
Lei Feng,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twi…
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The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twisted bilayer graphene and report the characterization of its electronic band structure using scanning tunneling microscopy and spectroscopy. The low-energy Van Hove singularities (VHSs) and superlattice Dirac cones, induced by the interlayer coupling and graphene-on-graphene moiré respectively, are observed in the tunneling spectra. Our experiment demonstrates that the energy difference of the two VHSs, which reflects the magnitude of interlayer coupling, can be tuned by the local coverage density of adsorption.
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Submitted 4 August, 2012;
originally announced August 2012.
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Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer
Authors:
Wei Yan,
Mengxi Liu,
Rui-Fen Dou,
Lan Meng,
Lei Feng,
Zhao-Dong Chu,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between…
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Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between 1.0^{\circ} and 3.0^{\circ} (here νF ~ 1.1\times106 m/s is the Fermi velocity of monolayer graphene, \DeltaK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer). This result indicates that the rotation angle between graphene sheets not results in significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ~ 1.3^{\circ}, the observed \DeltaEvhs ~ 0.11 eV is much less than the expected value \hbarνF\DeltaK ~ 0.28 eV at 1.3^{\circ}. The origin of the reduction of \DeltaEvhs at 1.3^{\circ} is discussed.
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Submitted 5 September, 2012; v1 submitted 26 June, 2012;
originally announced June 2012.
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Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer
Authors:
Wei Yan,
Wen-Yu He,
Zhao-Dong Chu,
Mengxi Liu,
Lan Meng,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-L…
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Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive Dirac fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap, i.e., the eight-fold degenerate Landau level at the charge neutrality point is splitted into two four-fold degenerate quartets polarized on each layer. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.
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Submitted 14 March, 2013; v1 submitted 26 June, 2012;
originally announced June 2012.
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Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms
Authors:
Lan Meng,
Zhao-Dong Chu,
Yanfeng Zhang,
Ji-Yong Yang,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analy…
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The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A atom of layer 1 and the B atom of layer 2 that have the same horizontal positions) that break the sublattice degeneracy of graphene locally. We further show that these periodic AB stacked atoms affect intervalley but not intravalley scattering. The result reported here provides an effective way to atomically manipulate the intervalley scattering of graphene.
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Submitted 26 June, 2012; v1 submitted 15 June, 2012;
originally announced June 2012.
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Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
Authors:
Lan Meng,
Yanfeng Zhang,
Wei Yan,
Lei Feng,
Lin He,
Rui-Fen Dou,
Jia-Cai Nie
Abstract:
We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS m…
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We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.
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Submitted 26 June, 2012; v1 submitted 2 November, 2011;
originally announced November 2011.
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Thermal strain-induced enhancement of electromagnetic properties in SiC-MgB2 composites
Authors:
R. Zeng S. X. Dou,
L. Lu,
W. X. Li,
J. H. Kim,
P. Munroe,
R. K. Zheng,
S. P. Ringer
Abstract:
Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The st…
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Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The strain engineering has been largely applied to the materials in thin film form, where the strain is generated as a result of lattice mismatch between the substrate and component film or between layers in multilayer structures. Here, we report the observation of residual thermal stress/strain in dense SiC-MgB2 superconductor composites prepared by a diffusion method. We demonstrate that the thermal strain caused by the different thermal expansion coefficients between the MgB2 and SiC phases is responsible for the significant improvement in the critical current density, Jc, the irreversibility field, Hirr, and the upper critical field, Hc2, in the SiC-MgB2 composite where the carbon substitution level is low. In contrast to the common practice of improving the Jc and Hc2 of MgB2 through chemical substitution, by taking advantage of residual thermal strains we are able to design a composite, which shows only a small drop in Tc and little increase in resistivity, but a significant improvement over the Jc and Hc2 of MgB2. The present findings open up a new direction for manipulation of materials properties through strain engineering for materials in various forms.
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Submitted 7 August, 2008;
originally announced August 2008.
