Showing 1–12 of 12 results for author: Gao, C L

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Authors: C. Q. Han, H. Li, W. J. Chen, Fengfeng Zhu, Meng-Yu Yao, Z. J. Li, M. Wang, Bo F. Gao, D. D. Guan, Canhua Liu, C. L. Gao, Dong Qian, Jin-Feng Jia

Abstract: Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upward… ▽ More Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor △ Less

Submitted 27 October, 2015; originally announced October 2015.

Journal ref: App. Phys. Lett. 107, 171602 (2015)

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Authors: Meng-Yu Yao, Fengfeng Zhu, Lin Miao, C. Q. Han, Fang Yang, D. D. Guan, C. L. Gao, Canhua Liu, Dong Qian, Jin-feng Jia

Abstract: Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the… ▽ More Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the bulk valence band and the bulk conduction band of Bi can be connected by the surface states. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided a direct experimental signature that Bi(111) thin films of a certain thickness on the Bi$_2$Te$_3$(111) substrate can be topologically nontrivial in three dimension. △ Less

Submitted 14 June, 2015; originally announced June 2015.

Journal ref: Scientific Reports 6, 21326 (2016)

Molecular-beam epitaxy of monolayer and bilayer WSe2: A scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

Authors: H. J. Liu, L. Jiao, L. Xie, F. Yang, J. L. Chen, W. K. Ho, C. L. Gao, J. F. Jia, X. D. Cui, M. H. Xie

Abstract: Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member of the transition-metal dichalcogenides family, by the molecular-beam epitaxy method remain uncharted probably because of the difficulty in generating… ▽ More Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member of the transition-metal dichalcogenides family, by the molecular-beam epitaxy method remain uncharted probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy study of molecular-beam epitaxy-grown WSe2 monolayer and bilayer, showing atomically flat epifilm with no domain boundary defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the domain boudaries defects is present. The scanning tunneling spectroscopy measurements of monolayer and bilayer WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from monolayer to bilayer, but also a band-bending effect across the boundary between monolayer and bilayer domains. This band-bending appears to be dictated by the edge states at steps of the bilayer islands. Finally, comparison is made between the scanning tunneling spectroscopy-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in monolayer and bilayer WSe2/MoSe2 are thus estimated. △ Less

Submitted 14 June, 2015; originally announced June 2015.

Journal ref: 2D Mater. 2 034004 (2015)

Electronic Structures of Black Phosphorus Studied by Angle-resolved Photoemission Spectroscopy

Authors: C. Q. Han, M. Y. Yao, X. X. Bai, Lin Miao, Fengfeng Zhu, D. D. Guan, Shun Wang, C. L. Gao, Canhua Liu, Dong Qian, Y. Liu, Jin-feng Jia

Abstract: Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside t… ▽ More Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. B 90, 085101 (2014)

Orbit- and Atom-Resolved Spin Textures of Intrinsic, Extrinsic and Hybridized Dirac Cone States

Authors: Lin Miao, Z. F. Wang, Meng-Yu Yao, Fengfeng Zhu, J. H. Dil, C. L. Gao, Canhua Liu, Feng Liu, Dong Qian, Jin-Feng Jia

Abstract: Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of Bi(111) bilayer and a 3D TI Bi2Se3 or Bi2Te3. The spin texture is found to be the same for the intrinsic Dirac cone of Bi2Se3 or Bi2Te3 surface state,… ▽ More Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of Bi(111) bilayer and a 3D TI Bi2Se3 or Bi2Te3. The spin texture is found to be the same for the intrinsic Dirac cone of Bi2Se3 or Bi2Te3 surface state, the extrinsic Dirac cone of Bi bilayer state induced by Rashba effect, and the hybridized Dirac cone between the former two states. Further orbit- and atom-resolved analysis shows that s and pz orbits have a clockwise (counterclockwise) spin rotation tangent to the iso-energy contour of upper (lower) Dirac cone, while px and py orbits have an additional radial spin component. The Dirac cone states may reside on different atomic layers, but have the same spin texture. Our results suggest that the unique spin texture of Dirac cone states is a signature property of spin-orbit coupling, independent of topology. △ Less

Submitted 24 April, 2014; originally announced April 2014.

Journal ref: Physical Review B 89, 155116 (2014)

Fully Gapped s-wave-like Superconducting State and Electronic Structures in the Ir0.95Pd0.05Te2 Single Crystals with Strong Spin-orbital Coupling

Authors: D. J. Yu, F. Yang, Lin Miao, C. Q. Han, Meng-Yu Yao, Fengfeng Zhu, Y. R. Song, K. F. Zhang, J. F. Ge, X. Yao, Z. Q. Zou, Z. J. Li, B. Gao, D. D. Guan, Canhua Liu, C. L. Gao, Dong Qian, Jin-feng Jia

Abstract: Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting… ▽ More Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting gap size, critical fields and coherence length along different directions were experimentally determined. Macroscopic bulk measurements and microscopic low temperature scanning tunneling spectroscopy results suggest that Ir0.95Pd0.05Te2 possesses a BCS-like s-wave state. No sign of zero bias conductance peak were found in the vortex core at 0.4K. △ Less

Submitted 19 February, 2014; originally announced February 2014.

Journal ref: Physical Review B 89, 100501(R) (2014)

Majorana mode in vortex core of Bi2Te3/NbSe2 topological insulator-superconductor heterostructure

Authors: Jin-Peng Xu, Mei-Xiao Wang, Zhi Long Liu, Jian-Feng Ge, Xiaojun Yang, Canhua Liu, Zhu An Xu, Dandan Guan, Chun Lei Gao, Dong Qian, Ying Liu, Qiang-Hua Wang, Fu-Chun Zhang, Qi-Kun Xue, Jin-Feng Jia

Abstract: Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny ene… ▽ More Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we overcome the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi2Te3/NbSe2. While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ~20nm away from the vortex center in Bi2Te3/NbSe2, primarily due to the Majorana fermion zero mode. While the Majorana mode is destroyed by reducing the distance between vortices, the zero bias peak splits as a conventional superconductor again. This work provides strong evidences of Majorana fermions and also suggests a possible route to manipulating them. △ Less

Submitted 26 December, 2013; originally announced December 2013.

Comments: 16 pages, 4 figures

Journal ref: PRL 114, 017001 (2015)

Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries

Authors: Long-Jing Yin, Jia-Bin Qiao, Wen-Xiao Wang, Zhao-Dong Chu, Kai Fen Zhang, Rui-Fen Dou, Chun Lei Gao, Jin-Feng Jia, Jia-Cai Nie, Lin He

Abstract: Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectrosc… ▽ More Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot. △ Less

Submitted 9 April, 2014; v1 submitted 6 December, 2013; originally announced December 2013.

Comments: 4 figures in main text and 8 figures in SI

Journal ref: Phys. Rev. B 89, 205410 (2014)

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Authors: Lin Miao, Z. F. Wang, Wenmei Ming, Meng-Yu Yao, Meixiao Wang, Fang Yang, Y. R. Song, Fengfeng Zhu, Alexei V. Fedorov, Z. Sun, C. L. Gao, Canhua Liu, Qi-Kun Xue, Chao-Xing Liu, Feng Liu, Dong Qian, Jin-Feng Jia

Abstract: Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical… ▽ More Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states. △ Less

Submitted 25 February, 2013; originally announced February 2013.

Journal ref: PNAS, 110, 2758 (2013)

Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

Authors: H. Li, Y. R. Song, Meng-Yu Yao, Fengfeng Zhu, Canhua Liu, C. L. Gao, Jin-Feng Jia, Dong Qian, X. Yao, Y. J. Shi, D. Wu

Abstract: The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$μ$B. Magnetic and non-magnetic phases separation was observed in al… ▽ More The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$μ$B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density. △ Less

Submitted 2 February, 2013; originally announced February 2013.

Journal ref: J. Appl. Phys. 113, 043926 (2013)

Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Authors: Z. F. Wang, Meng-Yu Yao, Wenmei Ming, Lin Miao, Fengfeng Zhu, Canhua Liu, C. L. Gao, Dong Qian, Jin-Feng Jia, Feng Liu

Abstract: Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical D… ▽ More Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical Dirac fermions from interfacing two gapped TI films, a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. The theoretical prediction is directly confirmed by experiment. We further show that the extrinsic helical Dirac fermions consists of predominantly Bi bilayer states, which are created by a giant Rashba effect due to interfacial charge transfer. Our findings provide a promising new method to create novel TI materials by interface engineering. △ Less

Submitted 22 January, 2013; originally announced January 2013.

Comments: 18 pages and 4 figures

Journal ref: Nature Communications 4:1384 (2013)

The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films

Authors: Mei-Xiao Wang, Canhua Liu, Jin-Peng Xu, Fang Yang, Lin Miao, Meng-Yu Yao, C. L. Gao, Chenyi Shen, Xucun Ma, X. Chen, Zhu-An Xu, Ying Liu, Shou-Cheng Zhang, Dong Qian, Jin-Feng Jia, Qi-Kun Xue

Abstract: This paper has been withdrawn by the author due to journal requirement. This paper has been withdrawn by the author due to journal requirement. △ Less

Submitted 15 December, 2011; v1 submitted 8 December, 2011; originally announced December 2011.

Comments: This paper has been withdrawn by the author due to journal requirement

Journal ref: Science, 336, 52 (2012)