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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1810.01312v2 (cond-mat)
[Submitted on 2 Oct 2018 (v1), last revised 14 Dec 2018 (this version, v2)]

Title:Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Authors:M.T. Greenaway, E.E. Vdovin, D. Ghazaryan, A. Misra, A. Mishchenko, Y. Cao, Z. Wang, J.R. Wallbank, M. Holwill, Yu.N. Khanin, S. V. Morozov, K. Watanabe, T. Taniguchi, O. Makarovsky, T.M. Fromhold, A. Patanè, A.K. Geim, V.I. Fal'ko, K.S. Novoselov, L. Eaves
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Abstract:Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
Comments: Supplementary information can be found at this https URL
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1810.01312 [cond-mat.mes-hall]
  (or arXiv:1810.01312v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1810.01312
Journal reference: Communications Physics 1, 94 (2018)
Related DOI: https://doi.org/10.1038/s42005-018-0097-1

Submission history

From: Mark Greenaway [view email]
[v1] Tue, 2 Oct 2018 15:04:13 UTC (2,911 KB)
[v2] Fri, 14 Dec 2018 16:10:20 UTC (1,751 KB)
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