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Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
Authors:
Taoufiq Ouaj,
Christophe Arnold,
Jon Azpeitia,
Sunaja Baltic,
Julien Barjon,
Jose Cascales,
Huanyao Cun,
David Esteban,
Mar Garcia-Hernandez,
Vincent Garnier,
Subodh K. Gautam,
Thomas Greber,
Said Said Hassani,
Adrian Hemmi,
Ignacio Jimenéz,
Catherine Journet,
Paul Kögerler,
Annick Loiseau,
Camille Maestre,
Marvin Metzelaars,
Philipp Schmidt,
Christoph Stampfer,
Ingrid Stenger,
Philippe Steyer,
Takashi Taniguchi
, et al. (3 additional authors not shown)
Abstract:
We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitri…
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We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices.
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Submitted 5 September, 2024;
originally announced September 2024.
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Spectroscopic evidence for a first-order transition to the orbital Fulde-Ferrell-Larkin-Ovchinnikov state
Authors:
Zongzheng Cao,
Menghan Liao,
Hongyi Yan,
Yuying Zhu,
Liguo Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Alberto F. Morpurgo,
Haiwen Liu,
Qi-Kun Xue,
Ding Zhang
Abstract:
A conventional superconducting state may be replaced by another dissipationless state hosting Cooper pairs with a finite momentum, leaving thermodynamic footprints for such a phase transition. Recently, a novel type of finite momentum pairing, so-called orbital Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, has been proposed to occur in spin-orbit coupled superconductors such as bilayer…
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A conventional superconducting state may be replaced by another dissipationless state hosting Cooper pairs with a finite momentum, leaving thermodynamic footprints for such a phase transition. Recently, a novel type of finite momentum pairing, so-called orbital Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, has been proposed to occur in spin-orbit coupled superconductors such as bilayer $2\mathrm{H-NbSe_{2}}$. So far, a thermodynamic demonstration, which is key for establishing this exotic phase, has been lacking. Here, we reveal a first-order quantum phase transition to the orbital FFLO state in tunneling spectroscopic measurements on multilayer $2\mathrm{H-NbSe_{2}}$. The phase transition manifests itself as a sudden enhancement of the superconducting gap at an in-plane magnetic field $B_{//}$ well below the upper critical field. Furthermore, this transition shows prominent hysteresis by sweeping $B_{//}$ back and forth and quickly disappears once the magnetic field is tilted away from the sample plane by less than one degree. We obtain a comprehensive phase diagram for the orbital FFLO state and compare it with the theoretical calculation that takes into account the rearrangement of Josephson vortices. Our work elucidates the microscopic mechanism for the emergence of the orbital FFLO state.
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Submitted 31 August, 2024;
originally announced September 2024.
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Residual quantum coherent electron transport in doped graphene leads
Authors:
Raphaëlle Delagrange,
Gaëlle Le Breton,
Kenji Watanabe,
Takashi Taniguchi,
Preden Roulleau,
Patrice Roche,
François D Parmentier
Abstract:
Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to high doping near the contacts. While this technique is widely used and has demonstrated its usefulness numerous times, little is known about the actual transport…
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Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to high doping near the contacts. While this technique is widely used and has demonstrated its usefulness numerous times, little is known about the actual transport properties of the doped graphene leads. Here, we present an experiment probing those properties in the quantum Hall regime at low temperature and high magnetic field, showing that electronic phase coherence and transport chirality are preserved, despite the significant charge equilibration occurring at the edges of the leads. Our work yields a finer understanding of the properties of the doped graphene leads, allowing for improvements of the contact quality that can be applied to other two-dimensional materials.
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Submitted 30 August, 2024;
originally announced August 2024.
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Sliding Wigner crystals in bilayer graphene at zero and finite magnetic fields
Authors:
Anna M. Seiler,
Martin Statz,
Christian Eckel,
Isabell Weimer,
Jonas Pöhls,
Kenji Watanabe,
Takashi Taniguchi,
Fan Zhang,
R. Thomas Weitz
Abstract:
AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Unexpectedly, an insulating phase has recently been observed when a large electric displacement field is applied and the charge carrier density is tuned to the vicinity of an ultra-low-density van Hove singularity. This phase exhibits features consistent…
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AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Unexpectedly, an insulating phase has recently been observed when a large electric displacement field is applied and the charge carrier density is tuned to the vicinity of an ultra-low-density van Hove singularity. This phase exhibits features consistent with Wigner crystallization, including a characteristic temperature dependence and non-linear current bias behavior. However, more direct evidence for the emergence of an electron crystal in AB-stacked bilayer graphene at zero magnetic field remains elusive. Here we explore the low-frequency noise generated by the depinning and sliding of the Wigner crystal lattice. The current bias and frequency dependence of these noise spectra align well with findings from previous experimental and theoretical studies on the quantum electron solids. Our results offer a compelling transport signature of Wigner crystallization in AB-stacked bilayer graphene at zero and finite magnetic fields, paving the way for further substantiating an anomalous Hall crystal in its original form.
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Submitted 29 August, 2024;
originally announced August 2024.
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Signatures of Chiral Superconductivity in Rhombohedral Graphene
Authors:
Tonghang Han,
Zhengguang Lu,
Yuxuan Yao,
Lihan Shi,
Jixiang Yang,
Junseok Seo,
Shenyong Ye,
Zhenghan Wu,
Muyang Zhou,
Haoyang Liu,
Gang Shi,
Zhenqi Hua,
Kenji Watanabe,
Takashi Taniguchi,
Peng Xiong,
Liang Fu,
Long Ju
Abstract:
Chiral superconductors are unconventional superconducting states that break time reversal symmetry spontaneously and typically feature Cooper pairing at non-zero angular momentum. Such states may host Majorana fermions and provide an important platform for topological physics research and fault-tolerant quantum computing. Despite of intensive search and prolonged studies of several candidate syste…
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Chiral superconductors are unconventional superconducting states that break time reversal symmetry spontaneously and typically feature Cooper pairing at non-zero angular momentum. Such states may host Majorana fermions and provide an important platform for topological physics research and fault-tolerant quantum computing. Despite of intensive search and prolonged studies of several candidate systems, chiral superconductivity has remained elusive so far. Here we report the discovery of unconventional superconductivity in rhombohedral tetra-layer graphene. We observed two superconducting states in the gate-induced flat conduction bands with Tc up to 300 mK and charge density ne as low as 2.4*1011 cm-2, appearing robustly in three different devices, where electrons reside close to a proximate WSe2 layer, far away from WSe2, and in the absence of WSe2 respectively. Spontaneous time-reversal-symmetry-breaking (TRSB) due to electron's orbital motion is found, and several observations indicate the chiral nature of these superconducting states, including 1. In the superconducting state, Rxx shows fluctuations at zero magnetic field and magnetic hysteresis versus an out-of-plane magnetic field B, which are absent from all other superconductors; 2. one superconducting state develops within a spin- and valley-polarized quarter-metal phase, and is robust against the neighboring spin-valley-polarized quarter-metal state under B; 3. the normal states show anomalous Hall signals at zero magnetic field and magnetic hysteresis. We also observed a critical B > 0.9 Tesla, higher than any graphene superconductivity reported so far and indicates a strong-coupling superconductivity close the BCS-BEC crossover. Our observations establish a pure carbon material for the study of topological superconductivity, and pave the way to explore Majorana modes and topological quantum computing.
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Submitted 27 August, 2024;
originally announced August 2024.
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Electric field control of superconductivity and quantized anomalous Hall effects in rhombohedral tetralayer graphene
Authors:
Youngjoon Choi,
Ysun Choi,
Marco Valentini,
Caitlin L. Patterson,
Ludwig F. W. Holleis,
Owen I. Sheekey,
Hari Stoyanov,
Xiang Cheng,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between superconducting materials, typically amorphous metals, and semiconducting quantum Hall or quantum anomalous Hall (QAH) systems. However, the strong interfacial disor…
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Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between superconducting materials, typically amorphous metals, and semiconducting quantum Hall or quantum anomalous Hall (QAH) systems. However, the strong interfacial disorder inherent can prevent the formation of isolated topological modes. An appealing alternative is to use low-density flat band materials where the ground state can be tuned between intrinsic superconducting and quantum anomalous Hall states using only the electric field effect. However, quantized transport and superconductivity have not been simultaneously achieved. Here, we show that rhombohedral tetralayer graphene aligned to a hexagonal boron nitride substrate hosts a quantized anomalous Hall state at superlattice filling $ν= -1$ as well as a superconducting state at $ν\approx -3.1$ at zero magnetic field. Remarkably, gate voltage can also be used to actuate nonvolatile switching of the chirality in the quantum anomalous Hall state, allowing arbitrarily reconfigurable networks of topological edge modes in locally gated devices. Thermodynamic compressibility measurements further reveal a topologically ordered fractional Chern insulator at $ν= 2/3$, also stable at zero magnetic field, enabling proximity coupling between superconductivity and fractionally charged edge modes. Finally, we show that integrating an additional transition metal dichalcogenide layer to the heterostructure enhances the maximum superconducting critical temperature and nucleates new superconducting pockets, while leaving the topology of $ν= -1$ the quantum anomalous Hall state intact. Our results pave the way for hybrid interfaces between superconductors and topological edge states in the low-disorder limit.
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Submitted 22 August, 2024;
originally announced August 2024.
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Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene
Authors:
Zaizhe Zhang,
Jingxin Yang,
Bo Xie,
Zuo Feng,
Shu Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoxia Yang,
Qing Dai,
Tao Liu,
Donghua Liu,
Kaihui Liu,
Zhida Song,
Jianpeng Liu,
Xiaobo Lu
Abstract:
The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interactio…
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The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = +-1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = +-3 states, we have observed new correlated insulating states at incommensurate moiré fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states.
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Submitted 22 August, 2024;
originally announced August 2024.
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Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Authors:
Sabin Park,
Rai Moriya,
Yijin Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
Graphene is known to exhibit a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and attracting attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across a barrier, namely, the tunneling photo-thermoelectric effect (TPTE). This was achieved in a monolayer graphene (MLG)/bilayer hexagon…
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Graphene is known to exhibit a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and attracting attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across a barrier, namely, the tunneling photo-thermoelectric effect (TPTE). This was achieved in a monolayer graphene (MLG)/bilayer hexagonal boron nitride (h-BN)/bilayer graphene (BLG) asymmetric tunnel junction. MLG and BLG exhibit different cyclotron resonance (CR) optical absorption energies when their energies are Landau quantized under an out-of-plane magnetic field. We tuned the magnetic field under mid-infrared (MIR) irradiation to bring MLG into CR conditions, whereas BLG was not in CR. The CR absorption in the MLG generates an electron temperature difference between the MLG and BLG, and induces an out-of-plane TPTE voltage across the h-BN tunnel barrier. The TPTE exhibited a unique dependence on the Fermi energy of the MLG, which differed from that of the in-plane PTE of the MLG. The TPTE signal was large when the Fermi energy of the MLG was tuned near the phase transition between the quantum Hall state (QHS) and non-QHS, that is, the transition between carrier localization and delocalization. The TPTE provides another degree of freedom for probing the electronic and optoelectronic properties of two-dimensional material heterostructures.
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Submitted 22 August, 2024;
originally announced August 2024.
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Magnetic proximity coupling to defects in a two-dimensional semiconductor
Authors:
Muhammad Hassan Shaikh,
Matthew Whalen,
Dai Q. Ho,
Aqiq Ishraq,
Collin Maurtua,
Kenji Watanabe,
Takashi Taniguchi,
Yafei Ren,
Anderson Janotti,
John Xiao,
Chitraleema Chakraborty
Abstract:
The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold unprecedented opportunities for ultrafast memory devices, artificial intelligence circuits, and novel computing technology. For example, chromium thiophosphate (CrPS4) is one of the most promising 2D A-type AFM materials due to its robust stability in diverse environmental conditions…
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The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold unprecedented opportunities for ultrafast memory devices, artificial intelligence circuits, and novel computing technology. For example, chromium thiophosphate (CrPS4) is one of the most promising 2D A-type AFM materials due to its robust stability in diverse environmental conditions and net out-of-plane magnetic moment in each layer, attributed to anisotropy in crystal axes (a and b). However, their net zero magnetic moment poses a challenge for detecting the Neel state that is used to encode information. In this study, we demonstrate the detection of the Neel vector by detecting the magnetic order of the surface layer by employing defects in tungsten diselenide (WSe2). These defects are ideal candidates for optically active transducers to probe the magnetic order due to their narrow linewidth and high susceptibility to magnetic fields. We observed spin-polarized charge transfer in the heterostructure of bulk CrPS4 and single-layer WSe2 indicating type-II band alignment as supported by density functional theory (DFT) calculations. In the A-type AFM regime, the intensity of both right-handed and left-handed circularly polarized light emanating from the sample remains constant as a function of the applied magnetic field, indicating a constant polarized transition behavior. Our results showcase a new approach to optically characterizing the magnetic states of 2D bulk AFM material, highlighting avenues for future research and technological applications.
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Submitted 21 August, 2024;
originally announced August 2024.
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Displacement field-controlled fractional Chern insulators and charge density waves in a graphene/hBN moiré superlattice
Authors:
Samuel H. Aronson,
Tonghang Han,
Zhengguang Lu,
Yuxuan Yao,
Kenji Watanabe,
Takashi Taniguchi,
Long Ju,
Raymond C. Ashoori
Abstract:
Rhombohedral multilayer graphene, with its flat electronic bands and concentrated Berry curvature, is a promising material for the realization of correlated topological phases of matter. When aligned to an adjacent hexagonal boron nitride (hBN) layer, the graphene develops narrow minibands with non-trivial topology. By tuning an externally-applied electric displacement field, the conduction electr…
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Rhombohedral multilayer graphene, with its flat electronic bands and concentrated Berry curvature, is a promising material for the realization of correlated topological phases of matter. When aligned to an adjacent hexagonal boron nitride (hBN) layer, the graphene develops narrow minibands with non-trivial topology. By tuning an externally-applied electric displacement field, the conduction electrons can either be pushed towards or away from the moiré superlattice. Motivated by the recent observation of the fractional quantum anomalous Hall effect (FQAHE) in the moiré-distant case, we study the opposite moiré-proximal case, where the superlattice potential is considerably stronger. We explore the physics within the moiré conduction bands through capacitance measurements that allow us to determine the inverse electronic compressibility and extract energy gaps of incompressible states. We observe integer and fractional Chern insulator states at superlattice filling factors v = 1, 2/3, and 1/3 with Streda slopes of -1, -2/3, and -1/3, respectively. Remarkably, the v = 1/3 state persists down to a magnetic field of 0.2 T. In addition, we also observe numerous trivial and topological charge density waves. We map out a phase diagram that is highly sensitive to both displacement and magnetic fields, which tune the system between various ground states by modifying the band dispersion and the structure of the electronic wavefunctions. This work demonstrates displacement field control of topological phase transitions in the moiré-proximal limit of rhombohedral pentalayer graphene, creating a highly-tunable platform for studying the interplay between intrinsic band topology and strong lattice effects.
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Submitted 20 August, 2024;
originally announced August 2024.
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Emergent cavity junction around metal-on-graphene contacts
Authors:
Yuhao Zhao,
Maëlle Kapfer,
Kenji Watanabe,
Takashi Taniguchi,
Oded Zilberberg,
Bjarke S. Jessen
Abstract:
Harnessing graphene devices for applications relies on a comprehensive understanding of how to interact with them. Specifically, scattering processes at the interface with metallic contacts can induce reproducible abnormalities in measurements. Here, we report on emergent transport signatures appearing when contacting sub-micrometer high-quality metallic top contacts to graphene. Using electrostat…
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Harnessing graphene devices for applications relies on a comprehensive understanding of how to interact with them. Specifically, scattering processes at the interface with metallic contacts can induce reproducible abnormalities in measurements. Here, we report on emergent transport signatures appearing when contacting sub-micrometer high-quality metallic top contacts to graphene. Using electrostatic simulations and first-principle calculations, we reveal their origin: the contact induces an n-doped radial cavity around it, which is cooperatively defined by the metal-induced electrostatic potential and Klein tunneling. This intricate mechanism leads to secondary resistance peaks as a function of graphene doping that decreases with increasing contact size. Interestingly, in the presence of a perpendicular magnetic field, the cavity spawns a distinct set of Landau levels that interferes with the Landau fan emanating from the graphene bulk. Essentially, an emergent 'second bulk' forms around the contact, as a result of the interplay between the magnetic field and the contact-induced electrostatic potential. The interplay between the intrinsic and emergent bulks leads to direct observation of bulk-boundary correspondence in our experiments. Our work unveils the microscopic mechanisms manifesting at metal-graphene interfaces, opening new avenues for understanding and devising graphene-based electronic devices.
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Submitted 20 August, 2024;
originally announced August 2024.
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Twist-Programmable Superconductivity in Spin-Orbit Coupled Bilayer Graphene
Authors:
Yiran Zhang,
Gal Shavit,
Huiyang Ma,
Youngjoon Han,
Kenji Watanabe,
Takashi Taniguchi,
David Hsieh,
Cyprian Lewandowski,
Felix von Oppen,
Yuval Oreg,
Stevan Nadj-Perge
Abstract:
The relative twist angle between layers of near-lattice-matched van der Waals materials is critical for the emergent correlated phenomena associated with moire flat bands. However, the concept of angle rotation control is not exclusive to moiré superlattices in which electrons directly experience a twist-angle-dependent periodic potential. Instead, it can also be employed to induce programmable sy…
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The relative twist angle between layers of near-lattice-matched van der Waals materials is critical for the emergent correlated phenomena associated with moire flat bands. However, the concept of angle rotation control is not exclusive to moiré superlattices in which electrons directly experience a twist-angle-dependent periodic potential. Instead, it can also be employed to induce programmable symmetry-breaking perturbations with the goal of stabilizing desired correlated states. Here, we experimentally demonstrate `moireless' twist-tuning of superconductivity together with other correlated orders in Bernal bilayer graphene proximitized by tungsten diselenide. The alignment between the two materials systematically controls the strength of the induced Ising spin-orbit coupling (SOC), profoundly altering the phase diagram. As Ising SOC is increased, superconductivity onsets at a higher displacement field and features a higher critical temperature, reaching up to 0.5K. Within the main superconducting dome and in the strong Ising SOC limit, we find an unusual phase transition characterized by a nematic redistribution of holes among trigonally warped Fermi pockets and enhanced resilience to in-plane magnetic fields. The behavior of the superconducting phase is well captured by our theoretical model, which emphasizes the role of interband interactions between Fermi pockets arising due to interaction-enhanced symmetry breaking. Moreover, we identify two additional superconducting regions, one of which descends from an inter-valley coherent normal state and exhibits a Pauli-limit violation ratio exceeding 40, among the highest for all known superconductors. Our results provide new insights into ultra-clean graphene-based superconductors and underscore the potential of utilizing moireless-twist engineering across a range of van der Waals heterostructures.
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Submitted 19 August, 2024;
originally announced August 2024.
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Extended Quantum Anomalous Hall States in Graphene/hBN Moiré Superlattices
Authors:
Zhengguang Lu,
Tonghang Han,
Yuxuan Yao,
Jixiang Yang,
Junseok Seo,
Lihan Shi,
Shenyong Ye,
Kenji Watanabe,
Takashi Taniguchi,
Long Ju
Abstract:
Electrons in topological flat bands can form novel topological states driven by the correlation effects. The penta-layer rhombohedral graphene/hBN moire superlattice has been shown to host fractional quantum anomalous Hall effect (FQAHE) at ~400 mK, triggering discussions around the underlying mechanism and the role of moire effects. In particular, novel electron crystal states with non-trivial to…
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Electrons in topological flat bands can form novel topological states driven by the correlation effects. The penta-layer rhombohedral graphene/hBN moire superlattice has been shown to host fractional quantum anomalous Hall effect (FQAHE) at ~400 mK, triggering discussions around the underlying mechanism and the role of moire effects. In particular, novel electron crystal states with non-trivial topology have been proposed. Here we report DC electrical transport measurement in rhombohedral penta- and tetra-layer graphene/hBN moire superlattices at electronic temperatures down to ~40 mK. We observed two more FQAH states in the penta-layer devices than previously reported. In a new tetra-layer device, we observed FQAHE at filling factors v = 3/5 and 2/3 at 300 mK. With a small bias current and the lowest temperature, we observed a new extended quantum anomalous Hall (EQAH) state and magnetic hysteresis, where Rxy = h/e2 and vanishing Rxx span a wide range of moire filling factor v from 0.5 to up to 1.3. By increasing the temperature or current, FQAHE can be recovered -- suggesting the break-down of the EQAH states and a phase transition into the fractional quantum Hall liquid. Furthermore, we observed displacement field-induced quantum phase transitions from the EQAH states to Fermi liquid, FQAH liquid and the likely composite Fermi liquid. Our observation establishes a new topological phase of electrons with quantized Hall resistance at zero magnetic field, and enriches the emergent quantum phenomena in materials with topological flat bands.
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Submitted 19 August, 2024;
originally announced August 2024.
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Superconductivity and spin canting in spin-orbit proximitized rhombohedral trilayer graphene
Authors:
Caitlin L. Patterson,
Owen I. Sheekey,
Trevor B. Arp,
Ludwig F. W. Holleis,
Jin Ming Koh,
Youngjoon Choi,
Tian Xie,
Siyuan Xu,
Evgeny Redekop,
Grigory Babikyan,
Haoxin Zhou,
Xiang Cheng,
Takashi Taniguchi,
Kenji Watanabe,
Chenhao Jin,
Etienne Lantagne-Hurtubise,
Jason Alicea,
Andrea F. Young
Abstract:
Graphene and transition metal dichalcogenide flat-band systems show similar phase diagrams, replete with magnetic and superconducting phases. An abiding question has been whether magnetic ordering competes with superconductivity or facilitates pairing. The advent of crystalline graphene superconductors enables a new generation of controlled experiments to probe the microscopic origin of supercondu…
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Graphene and transition metal dichalcogenide flat-band systems show similar phase diagrams, replete with magnetic and superconducting phases. An abiding question has been whether magnetic ordering competes with superconductivity or facilitates pairing. The advent of crystalline graphene superconductors enables a new generation of controlled experiments to probe the microscopic origin of superconductivity. For example, recent studies of Bernal bilayer graphene show a dramatic increase in the observed domain and critical temperature $T_c$ of superconducting states in the presence of enhanced spin-orbit coupling; the mechanism for this enhancement, however, remains unclear. Here, we show that introducing spin-orbit coupling in rhombohedral trilayer graphene (RTG) via substrate proximity effect generates new superconducting pockets for both electron and hole doping, with maximal $T_c\approx$ 300mK three times larger than in RTG encapsulated by hexagonal boron nitride alone. Using local magnetometry and thermodynamic compressibility measurements, we show that superconductivity straddles an apparently continuous transition between a spin-canted state with a finite in-plane magnetic moment and a state with complete spin-valley locking. This transition is reproduced in our Hartree-Fock calculations, where it is driven by the competition between spin-orbit coupling and the carrier-density-tuned Hund's interaction. Our experiment suggests that the enhancement of superconductivity by spin-orbit coupling is driven not by a change in the ground state symmetry or degeneracy but rather by a quantitative change in the canting angle. These results align with a recently proposed mechanism for the enhancement of superconductivity in spin-orbit coupled rhombohedral multilayers, in which fluctuations in the spin-canting order contribute to the pairing interaction.
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Submitted 19 August, 2024;
originally announced August 2024.
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Interplay of electronic crystals with integer and fractional Chern insulators in moiré pentalayer graphene
Authors:
Dacen Waters,
Anna Okounkova,
Ruiheng Su,
Boran Zhou,
Jiang Yao,
Kenji Watanabe,
Takashi Taniguchi,
Xiaodong Xu,
Ya-Hui Zhang,
Joshua Folk,
Matthew Yankowitz
Abstract:
The rapid development of moiré quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moiré lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexa…
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The rapid development of moiré quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moiré lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moiré unit cell, we see a correlated insulator with a Chern number that can be tuned between $C=0$ and $+1$ by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, $ν$. Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moiré lattice. Upon applying a modest magnetic field, a narrow region forms around $ν=2/3$ in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional $ν$. In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moiré unit cell. Our results establish moiré RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization.
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Submitted 19 August, 2024;
originally announced August 2024.
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Diverse Impacts of Spin-Orbit Coupling on Superconductivity in Rhombohedral Graphene
Authors:
Jixiang Yang,
Xiaoyan Shi,
Shenyong Ye,
Chiho Yoon,
Zhengguang Lu,
Vivek Kakani,
Tonghang Han,
Junseok Seo,
Lihan Shi,
Kenji Watanabe,
Takashi Taniguchi,
Fan Zhang,
Long Ju
Abstract:
Engineering non-Abelian quasiparticles by combining superconductivity and topological states have been proposed as a route to realize topological quantum computation. Rhombohedral multilayer graphene with layer number N>=3 has been shown as a promising platform, as it hosts integer and fractional quantum anomalous Hall effects when proximitized by transition metal dichalcogenide (TMD) and a moire…
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Engineering non-Abelian quasiparticles by combining superconductivity and topological states have been proposed as a route to realize topological quantum computation. Rhombohedral multilayer graphene with layer number N>=3 has been shown as a promising platform, as it hosts integer and fractional quantum anomalous Hall effects when proximitized by transition metal dichalcogenide (TMD) and a moire potential. However, superconductivity in similar devices have remained largely unexplored, although proximitized spin-orbit-coupling (SOC) effect has been shown to strengthen or induce superconductivity in both crystalline and twisted graphene. Here we report electron transport measurements of TMD-proximitized rhombohedral trilayer graphene (RTG) at temperatures down to 40 mK. We observed a new hole-doped superconducting state SC4 with a transition temperature Tc of 230 mK. On the electron-doped side, we identified a new isospin-symmetry breaking three-quarter-metal (TQM) phase. Near this three-quarter-metal state, the state SC3, very weak in bare RTG, is fully developed into a superconducting state at 110 mK. By performing fermiology analysis based on the quantum oscillation measurement, we showed that the SC3 and SC4 states reside at the phase boundaries between different isospin-symmetry-breaking states. These observations are aligned with the existing understanding that SOC enhances graphene superconductivity. Surprisingly, the original superconducting state SC1 in bare RTG is strongly suppressed in the presence of TMD, and we cannot find it down to the base temperature of our measurement. Our observations form the basis of exploring superconductivity and non-Abelian quasiparticles in rhombohedral graphene devices, and provide experimental evidence that challenges the understanding of the impacts of SOC on graphene superconductivity.
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Submitted 19 August, 2024;
originally announced August 2024.
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Rapid infrared imaging for rhombohedral graphene
Authors:
Zuo Feng,
Wenxuan Wang,
Yilong You,
Yifei Chen,
Kenji Watanabe,
Takashi Taniguchi,
Chang Liu,
Kaihui Liu,
Xiaobo Lu
Abstract:
The extrinsic stacking sequence based on intrinsic crystal symmetry in multilayer two-dimensional materials plays a significant role in determining their electronic and optical properties. Compared with Bernal-stacked (ABA) multilayer graphene, rhombohedral (ABC) multilayer graphene hosts stronger electron-electron interaction due to its unique dispersion at low-energy excitations and has been uti…
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The extrinsic stacking sequence based on intrinsic crystal symmetry in multilayer two-dimensional materials plays a significant role in determining their electronic and optical properties. Compared with Bernal-stacked (ABA) multilayer graphene, rhombohedral (ABC) multilayer graphene hosts stronger electron-electron interaction due to its unique dispersion at low-energy excitations and has been utiliazed as a unique platform to explore strongly correlated physics. However, discerning the stacking sequence has always been a quite time-consuming process by scanning mapping methods. Here, we report a rapid recognition method for ABC- stacked graphene with high accuracy by infrared imaging based on the distinct optical responses at infrared range. The optical contrast of the image between ABC and ABA stacked graphene is strikingly clear, and the discernibility is comparable to traditional optical Raman microscopy but with higher consistency and throughput. We further demonstrate that the infrared imaging technique can be integrated with dry transfer techniques commonly used in the community. This rapid and convenient infrared imaging technique will significantly improve the sorting efficiency for differently stacked multilayer graphene, thereby accelerating the exploration of the novel emergent correlated phenomena in ABC stacked graphene.
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Submitted 19 August, 2024;
originally announced August 2024.
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Observation of electrical high-harmonic generation
Authors:
Xiaozhou Zan,
Ming Gong,
Zitian Pan,
Haiwen Liu,
Jingwei Dong,
Jundong Zhu,
Le Liu,
Yanbang Chu,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Wei Yang,
Luojun Du,
Xin-Cheng Xie,
Guangyu Zhang
Abstract:
High-harmonic generation (HHG), an extreme nonlinear effect, introduces an unprecedented paradigm to detect emergent quantum phases and electron dynamics inconceivable in the framework of linear and low-order nonlinear processes. As an important manifestation, the optical HHG (o-HHG) enables extraordinary opportunities to underpin attosecond physics. In addition to nonlinear optics, emerging nonli…
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High-harmonic generation (HHG), an extreme nonlinear effect, introduces an unprecedented paradigm to detect emergent quantum phases and electron dynamics inconceivable in the framework of linear and low-order nonlinear processes. As an important manifestation, the optical HHG (o-HHG) enables extraordinary opportunities to underpin attosecond physics. In addition to nonlinear optics, emerging nonlinear electric transport has been demonstrated recently and opens new paradigms to probe quantum phase transition, symmetry breaking, band geometrical and topological properties. Thus far, only electrical second-/third-harmonic generation in perturbative regime has been elucidated, while the electrical HHG (e-HHG) that can advance to extreme non-perturbative physics remains elusive. Here we report the observation of e-HHG up to 300th-order. Remarkably, the e-HHG shows a clear non-perturbative character and exhibits periodic oscillations with the reciprocal of driving current. Further, theoretical simulations corroborate the experiments, suggesting the contribution of singular distribution of Berry curvature near band edges. Our results demonstrate e-HHG in extreme nonlinear regime and may shed light on a plethora of exotic physics and applications, such as extreme non-equilibrium quantum phenomena, ultra-fast and coherent electrical signal generations and detections.
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Submitted 19 August, 2024;
originally announced August 2024.
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Nonlinear electrical transport unveils Fermi surface malleability in a moiré heterostructure
Authors:
Suvronil Datta,
Saisab Bhowmik,
Harsh Varshney,
Kenji Watanabe,
Takashi Taniguchi,
Amit Agarwal,
U. Chandni
Abstract:
Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport m…
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Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport measurements have limited sensitivity to the band's topology. Here, we utilize nonlinear longitudinal and transverse transport measurements to probe these unique features in twisted bilayer graphene at zero magnetic field. We demonstrate that the nonlinear responses, induced by the Berry curvature dipole and extrinsic scattering processes, intricately map the Fermi surface reconstructions at various fillings. Importantly, our experiments highlight the intrinsic connection of these features with the moiré bands. Beyond corroborating the insights from linear Hall measurements, our findings establish nonlinear transport as a pivotal tool for probing band topology and correlated phenomena.
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Submitted 16 August, 2024;
originally announced August 2024.
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Multiplet Supercurrents in a Josephson Circuit
Authors:
Ethan G. Arnault,
John Chiles,
Trevyn F. Q. Larson,
Chun-Chia Chen,
Lingfei Zhao,
Kenji Watanabe,
Takashi Taniguchi,
Francois Amet,
Gleb Finkelstein
Abstract:
Multiterminal Josephson junctions are a promising platform to host synthetic topological phases of matter and Floquet states. However, the energy scales governing topological protection in these devices are on the order of the spacing between Andreev bound states. Recent theories suggest that similar phenomena may instead be explored in circuits composed of two-terminal Josephson junctions, allowi…
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Multiterminal Josephson junctions are a promising platform to host synthetic topological phases of matter and Floquet states. However, the energy scales governing topological protection in these devices are on the order of the spacing between Andreev bound states. Recent theories suggest that similar phenomena may instead be explored in circuits composed of two-terminal Josephson junctions, allowing for the topological protection to be controlled by the comparatively large Josephson energy. Here, we explore a Josephson circuit, in which three superconducting electrodes are connected through Josephson junctions to a common superconducting island. We demonstrate the dynamic generation of multiplet resonances, which have previously been observed in multiterminal Josephson junctions. The multiplets are found to be robust to elevated temperatures and are confirmed by exhibiting the expected Shapiro step quantization under a microwave drive. We also find an unexpected novel supercurrent, which couples a pair of contacts that are both voltage-biased with respect to the common superconducting island. We show that this supercurrent results from synchronization of the phase dynamics and pose the question whether it should also carry a topological contribution.
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Submitted 15 August, 2024;
originally announced August 2024.
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High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch
Authors:
Ke Huang,
Hailong Fu,
Kenji Watanabe,
Takashi Taniguchi,
Jun Zhu
Abstract:
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the pre…
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Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
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Submitted 14 August, 2024;
originally announced August 2024.
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Exciton diffusion in two-dimensional chiral perovskites
Authors:
Sophia Terres,
Lucas Scalon,
Julius Brunner,
Dominik Horneber,
Johannes Dureth,
Shiyu Huang,
Takashi Taniguchi,
Kenji Watanabe,
Ana Flavia Nogueira,
Sven Hoefling,
Sebastian Klembt,
Yana Vaynzof,
Alexey Chernikov
Abstract:
Two-dimensional (2D) organic-inorganic hybrid perovskites emerged as a versatile platform for light-emitting and photovol-taic applications due to their unique structural design and chemical flexibility. Their properties depend heavily on both the choice of the inorganic lead halide framework and the surrounding organic layers. Recently, the introduction of chiral cations into 2D perovskites has a…
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Two-dimensional (2D) organic-inorganic hybrid perovskites emerged as a versatile platform for light-emitting and photovol-taic applications due to their unique structural design and chemical flexibility. Their properties depend heavily on both the choice of the inorganic lead halide framework and the surrounding organic layers. Recently, the introduction of chiral cations into 2D perovskites has attracted major interest due to their potential for introducing chirality and tuning the chiro-optical response. Importantly, the optical properties in these materials are dominated by tightly bound excitons that also serve as primary carriers for the energy transport. The mobility of photoinjected excitons is thus important from the perspectives of fundamental material properties and optoelectronic applications, yet remains an open question. Here, we demonstrate exciton propagation in a 2D chiral perovskite methylbenzylammonium lead iodide (MBA2PbI4) using transient photoluminescence microscopy and reveal density-dependent transport over more than 100 nanometers at room temperature with diffusion coeffi-cients as high as 2 cm2/s. We observe two distinct regimes of initially rapid diffusive propagation and subsequent localiza-tion. Moreover, perovskites with enantiomer pure cations are found to exhibit faster exciton diffusion compared to the race-mic mixture, correlated with the impact of the material composition on disorder. Altogether, the observations of efficient exciton diffusion at room temperature highlight the potential of 2D chiral perovskites to merge chiro-optical properties with strong light-matter interaction and efficient energy transport.
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Submitted 13 August, 2024; v1 submitted 12 August, 2024;
originally announced August 2024.
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Tunable atomically enhanced moiré Berry curvatures in twisted triple bilayer graphene
Authors:
Konstantin Davydov,
Ziyan Zhu,
Noah Friedman,
Ethan Gramowski,
Yaotian Li,
Jack Tavakley,
Kenji Watanabe,
Takashi Taniguchi,
Mitchell Luskin,
Efthimios Kaxiras,
Ke Wang
Abstract:
We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene (BLG) consecutively twisted at 1.49° and 1.68°. We observe inter-moiré Hofstadter butterflies from two co-existing moiré superlattices and a Hofstadter butterfly from reconstructed moiré-of-moiré lattice, and show that their Brown-Zak (BZ) oscillations quantitatively agree with each other, bot…
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We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene (BLG) consecutively twisted at 1.49° and 1.68°. We observe inter-moiré Hofstadter butterflies from two co-existing moiré superlattices and a Hofstadter butterfly from reconstructed moiré-of-moiré lattice, and show that their Brown-Zak (BZ) oscillations quantitatively agree with each other, both evidencing strong atomic reconstruction with a lattice constant of 18.1 nm. We further demonstrate such atomic reconstruction strongly enhances the Berry curvature of each moiré and moiré-of-moiré band-insulator state, characterized by measured strong non-local valley Hall effect (VHE) that sensitively depends on the inter-moiré competition strength, tunable by manipulating the out-of-the-plane carrier distribution which controls the magnitude of the valley currents. Our study sheds new light on the microscopic mechanism of atomic and electronic reconstruction in twisted-multilayer systems, by investigating novel emergent quantum phenomena of reconstructed quasi-crystalline moiré-of-moiré superlattice, including a new type of moiré-of-moiré band-insulator states and atomically enhanced moiré Berry curvature. We show that the reconstructed electronic band can be versatilely tuned by electrostatics, providing an approach towards engineering the band structure and its topology for a novel quantum material platform with designer electrical and optical properties.
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Submitted 11 August, 2024;
originally announced August 2024.
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Role of additional microwave voltage on phase locking in voltage-controlled parametric oscillator
Authors:
Tomohiro Taniguchi
Abstract:
A demonstration of parametric oscillation of magnetization in nanostructured ferromagnets via voltage-controlled magnetic anisotropy (VCMA) effect provided an alternative approach to spintronic oscillator applications with low-energy consumption. However, the phase of this voltage-controlled parametric oscillator was unable to be locked uniquely by microwave VCMA effect. The oscillation phase is l…
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A demonstration of parametric oscillation of magnetization in nanostructured ferromagnets via voltage-controlled magnetic anisotropy (VCMA) effect provided an alternative approach to spintronic oscillator applications with low-energy consumption. However, the phase of this voltage-controlled parametric oscillator was unable to be locked uniquely by microwave VCMA effect. The oscillation phase is locked in one of two possible states, which originates from the fact that the frequency of the microwave voltage is twice that of the magnetization oscillation. In this work, we investigate the phase locking by additional microwave voltage through analytical and numerical studies of the Landau-Lifshitz-Gilbert equation. An analytical study suggests that the additional voltage makes one of two phases more stable than the other by having asymmetric potential for the phase. The simulation results indicate a trigonometric-function-like dependence of the locked rate on the phase of the additional voltage, which qualitatively agrees with the analytical theory and also suggests a possibility to manipulate the phase by the additional voltage.
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Submitted 10 August, 2024;
originally announced August 2024.
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Field-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor Quasicrystal
Authors:
Zhida Liu,
Qiang Gao,
Yanxing Li,
Xiaohui Liu,
Fan Zhang,
Dong Seob Kim,
Yue Ni,
Miles Mackenzie,
Hamza Abudayyeh,
Kenji Watanabe,
Takashi Taniguchi,
Chih-Kang Shih,
Eslam Khalaf,
Xiaoqin Li
Abstract:
Quasicrystals are characterized by atomic arrangements possessing long-range order without periodicity. Van der Waals (vdW) bilayers provide a unique opportunity to controllably vary atomic alignment between two layers from a periodic moiré crystal to an aperiodic quasicrystal. Here, we reveal a remarkable consequence of the unique atomic arrangement in a dodecagonal WSe2 quasicrystal: the K and Q…
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Quasicrystals are characterized by atomic arrangements possessing long-range order without periodicity. Van der Waals (vdW) bilayers provide a unique opportunity to controllably vary atomic alignment between two layers from a periodic moiré crystal to an aperiodic quasicrystal. Here, we reveal a remarkable consequence of the unique atomic arrangement in a dodecagonal WSe2 quasicrystal: the K and Q valleys in separate layers are brought arbitrarily close in momentum space via higher-order Umklapp scatterings. A modest perpendicular electric field is sufficient to induce strong interlayer K-Q hybridization, manifested as a new hybrid excitonic doublet. Concurrently, we observe the disappearance of the trion resonance and attribute it to quasicrystal potential driven localization. Our findings highlight the remarkable attribute of incommensurate systems to bring any pair of momenta into close proximity, thereby introducing a novel aspect to valley engineering.
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Submitted 4 August, 2024;
originally announced August 2024.
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Strongly interacting Hofstadter states in magic-angle twisted bilayer graphene
Authors:
Minhao He,
Xiaoyu Wang,
Jiaqi Cai,
Jonah Herzog-Arbeitman,
Takashi Taniguchi,
Kenji Watanabe,
Ady Stern,
B. Andrei Bernevig,
Matthew Yankowitz,
Oskar Vafek,
Xiaodong Xu
Abstract:
Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG de…
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Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG device, notably including symmetry-broken Chern insulator (SBCI) states and fractional quantum Hall (FQH) states. The observed SBCI states form a cascade with their Chern numbers mimicking the main sequence correlated Chern insulators. The FQH states in MATBG form in Jain sequence; however, they disappear at high magnetic field, distinct from conventional FQH states which strengthen with increasing magnetic field. We reveal a unique magnetic field-driven phase transition from composite fermion phases to a dissipative Fermi liquid. Our theoretical analysis of the magnetic subbands hosting FQH states predicts non uniform quantum geometric properties far from the lowest Landau level. This points towards a more natural interpretation of these FQH states as in-field fractional Chern insulators of the magnetic subbands.
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Submitted 2 August, 2024;
originally announced August 2024.
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Frustrated hopping from orbital decoration of a primitive two-dimensional lattice
Authors:
Aravind Devarakonda,
Christie S. Koay,
Daniel G. Chica,
Morgan Thinel,
Asish K. Kundu,
Zhi Lin,
Alexandru B. Georgescu,
Sebastian Rossi,
Sae Young Han,
Michael E. Ziebel,
Madisen A. Holbrook,
Anil Rajapitamahuni,
Elio Vescovo,
K. Watanabe,
T. Taniguchi,
Milan Delor,
Xiaoyang Zhu,
Abhay N. Pasupathy,
Raquel Queiroz,
Cory R. Dean,
Xavier Roy
Abstract:
Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable cha…
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Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable challenge, exemplified by the absence of solid-state materials realizing the dice and Lieb lattices. An alternative route leverages atomic orbitals to create the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials to simpler structures, but is yet to be demonstrated experimentally. Here, we report the realization of frustrated hopping in the van der Waals (vdW) intermetallic Pd$_5$AlI$_2$, emerging from orbital decoration of a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillations measurements, we demonstrate that the band structure of Pd$_5$AlI$_2$ includes linear Dirac-like bands intersected at their crossing point by a flat band, essential characteristics of frustrated hopping in the Lieb and dice lattices. Moreover, Pd$_5$AlI$_2$ is exceptionally stable, with the unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Our ability to realize an electronic structure characteristic of geometrically frustrated lattices establishes orbital decoration of primitive lattices as a new approach towards electronic structures that remain elusive to prevailing lattice-centric searches.
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Submitted 6 August, 2024; v1 submitted 2 August, 2024;
originally announced August 2024.
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Dipole orientation reveals single-molecule interactions and dynamics on 2D crystals
Authors:
Wei Guo,
Tzu-Heng Chen,
Nathan Ronceray,
Eveline Mayner,
Kenji Watanabe,
Takashi Taniguchi,
Aleksandra Radenovic
Abstract:
Direct observation of single-molecule interactions and dynamic configurations in situ is a demanding challenge but crucial for both chemical and biological systems. However, optical microscopy that relies on bulk measurements cannot meet these requirements due to rapid molecular diffusion in solutions and the complexity of reaction systems. In this work, we leveraged the fluorescence activation of…
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Direct observation of single-molecule interactions and dynamic configurations in situ is a demanding challenge but crucial for both chemical and biological systems. However, optical microscopy that relies on bulk measurements cannot meet these requirements due to rapid molecular diffusion in solutions and the complexity of reaction systems. In this work, we leveraged the fluorescence activation of pristine hexagonal boron nitride (h-BN) in organic solvents as a molecular sensing platform, confining the molecules to a two-dimensional (2D) interface and slowing down their motion. Conformational recognition and dynamic tracking were achieved simultaneously by measuring the 3D orientation of fluorescent emitters through polarized single-molecule localization microscopy (SMLM). We found that the orientation of in-plane emitters aligns with the symmetry of the h-BN lattice, and their conformation is influenced by both the local conditions of h-BN and the regulation of the electrochemical environment. Additionally, lateral diffusion of fluorescent emitters at the solid-liquid interface displays more abundant dynamics compared to solid-state emitters. This study opens the door for the simultaneous molecular conformation and photophysics measurement, contributing to the understanding of interactions at the single-molecule level and real-time sensing through 2D materials.
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Submitted 2 August, 2024;
originally announced August 2024.
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Ultra-steep slope cryogenic FETs based on bilayer graphene
Authors:
E. Icking,
D. Emmerich,
K. Watanabe,
T. Taniguchi,
B. Beschoten,
M. C. Lemme,
J. Knoch,
C. Stampfer
Abstract:
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-…
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Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 $μ$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.
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Submitted 2 August, 2024;
originally announced August 2024.
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Strongly correlated Hofstadter subbands in minimally twisted bilayer graphene
Authors:
Cheng Shen,
Yifei Guan,
Davide Pizzirani,
Zekang Zhou,
Punam Barman,
Kenji Watanabe,
Takashi Taniguchi,
Steffen Wiedmann,
Oleg V. Yazyev,
Mitali Banerjee
Abstract:
Moiré superlattice in twisted bilayer graphene has been proven to be a versatile platform for exploring exotic quantum phases. Extensive investigations have been invoked focusing on the zero-magnetic-field phase diagram at the magic twist angle around $θ=1.1\degree$, which has been indicated to be an exclusive regime for exhibiting flat band with the interplay of strong electronic correlation and…
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Moiré superlattice in twisted bilayer graphene has been proven to be a versatile platform for exploring exotic quantum phases. Extensive investigations have been invoked focusing on the zero-magnetic-field phase diagram at the magic twist angle around $θ=1.1\degree$, which has been indicated to be an exclusive regime for exhibiting flat band with the interplay of strong electronic correlation and untrivial topology in the experiment so far. In contrast, electronic bands in non-magic-angle twisted bilayer graphene host dominant electronic kinetic energy compared to Coulomb interaction. By quenching the kinetic energy and enhancing Coulomb exchange interactions by means of an applied perpendicular magnetic field, here we unveil gapped flat Hofstadter subbands at large magnetic flux that yield correlated insulating states in minimally twisted bilayer graphene at $θ=0.41\degree$. These states appear with isospin symmetry breaking due to strong Coulomb interactions. Our work provides a platform for studying the phase transition of the strongly correlated Hofstadter spectrum.
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Submitted 1 August, 2024;
originally announced August 2024.
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Observation of current whirlpools in graphene at room temperature
Authors:
Marius L. Palm,
Chaoxin Ding,
William S. Huxter,
Takashi Taniguchi,
Kenji Watanabe,
Christian L. Degen
Abstract:
Electron-electron interactions in high-mobility conductors can give rise to transport signatures resembling those described by classical hydrodynamics. Using a nanoscale scanning magnetometer, we imaged a distinctive hydrodynamic transport pattern - stationary current vortices - in a monolayer graphene device at room temperature. By measuring devices with increasing characteristic size, we observe…
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Electron-electron interactions in high-mobility conductors can give rise to transport signatures resembling those described by classical hydrodynamics. Using a nanoscale scanning magnetometer, we imaged a distinctive hydrodynamic transport pattern - stationary current vortices - in a monolayer graphene device at room temperature. By measuring devices with increasing characteristic size, we observed the disappearance of the current vortex and thus verify a prediction of the hydrodynamic model. We further observed that vortex flow is present for both hole- and electron-dominated transport regimes, while disappearing in the ambipolar regime. We attribute this effect to a reduction of the vorticity diffusion length near charge neutrality. Our work showcases the power of local imaging techniques for unveiling exotic mesoscopic transport phenomena.
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Submitted 31 July, 2024;
originally announced August 2024.
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Femtosecond switching of strong light-matter interactions in microcavities with two-dimensional semiconductors
Authors:
Armando Genco,
Charalambos Louca,
Cristina Cruciano,
Kok Wee Song,
Chiara Trovatello,
Giuseppe Di Blasio,
Giacomo Sansone,
Sam Randerson,
Peter Claronino,
Rahul Jayaprakash,
Kenji Watanabe,
Takashi Taniguchi,
David G. Lidzey,
Oleksandr Kyriienko,
Stefano Dal Conte,
Alexander I. Tartakovskii,
Giulio Cerullo
Abstract:
Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-opti…
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Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-optical ultrafast polariton transistors. However, the pulse energies required to pump such devices range from tens to hundreds of pJ, making them not competitive with electronic transistors. Here we introduce a new paradigm for all-optical switching based on the ultrafast transition from the strong to the weak coupling regime in microcavities embedding atomically thin transition metal dichalcogenides. Employing single and double stacks of hBN-encapsulated MoS$_2$ homobilayers with high optical nonlinearities and fast exciton relaxation times, we observe a collapse of the 55-meV polariton gap and its revival in less than one picosecond, lowering the threshold for optical switching below 4 pJ per pulse, while retaining ultrahigh switching frequencies. As an additional degree of freedom, the switching can be triggered pumping either the intra- or the interlayer excitons of the bilayers at different wavelengths, speeding up the polariton dynamics, owing to unique interspecies excitonic interactions. Our approach will enable the development of compact ultrafast all-optical logical circuits and neural networks, showcasing a new platform for polaritonic information processing based on manipulating the light-matter coupling.
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Submitted 31 July, 2024;
originally announced August 2024.
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Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential
Authors:
Natasha Kiper,
Haydn S. Adlong,
Arthur Christianen,
Martin Kroner,
Kenji Watanabe,
Takashi Taniguchi,
Atac Imamoglu
Abstract:
Moiré heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form of Mott-Wigner states and fractional Chern insulators have already been observed in TMD monolayers and their twisted bilayers. In this work, we use a moiré subst…
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Moiré heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form of Mott-Wigner states and fractional Chern insulators have already been observed in TMD monolayers and their twisted bilayers. In this work, we use a moiré substrate containing a twisted hexagonal boron nitride (h-BN) interface to externally generate a superlattice potential for the TMD layer: the periodic structure of ferroelectric domains in h-BN effects a purely electrostatic potential for charge carriers. We find direct evidence for the induced moiré potential in the emergence of new excitonic resonances at integer fillings, and our observation of an enhancement of the trion binding energy by $\simeq$ 3 meV. A theoretical model for exciton-electron interactions allows us to directly determine the moiré potential modulation of 30$\pm$5 meV from the measured trion binding energy shift. We obtain direct evidence for charge order linked to electronic Mott-Wigner states at filling factors $ν$ = 1/3 and $ν$ = 2/3 through the associated exciton Umklapp resonances.
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Submitted 30 July, 2024;
originally announced July 2024.
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Giant anisotropic magnetoresistance in few-layer α-RuCl3 tunnel junctions
Authors:
Mathieu Massicotte,
Sam Dehlavi,
Xiaoyu Liu,
James L. Hart,
Elio Garnaoui,
Paula Lampen-Kelley,
Jiaqiang Yan,
David Mandrus,
Stephen E. Nagler,
Kenji Watanabe,
Takashi Taniguchi,
Bertrand Reulet,
Judy J. Cha,
Hae-Young Kee,
Jeffrey A. Quilliam
Abstract:
The spin-orbit assisted Mott insulator $α$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measur…
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The spin-orbit assisted Mott insulator $α$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin $α$-RuCl3 crystals with various layer numbers to probe their magnetic, electronic and crystal structure. We observe a giant change in resistance - as large as ~2500% - when the magnetic field rotates either within or out of the $α$-RuCl3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer $α$-RuCl3 crystals remain in the high-temperature monoclinic phase at low temperature. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature TN ~ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases like QSLs via van der Waals engineering.
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Submitted 29 July, 2024;
originally announced July 2024.
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Interlayer Raman modes in twisted bilayer TMDCs
Authors:
Eileen Schneider,
Kenji Watanabe,
Takashi Taniguchi,
Janina Maultzsch
Abstract:
Twisted bilayer two-dimensional transition-metal dichalgocenides (TMDCs) exhibit a range of novel phenomena such as the formation of moiré excitons and strongly correlated phases. The coupling between the layers is crucial for the resulting physical properties and depends not just on the twist angle but also on the details of the fabrication process. Here, we present an approach for the analysis o…
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Twisted bilayer two-dimensional transition-metal dichalgocenides (TMDCs) exhibit a range of novel phenomena such as the formation of moiré excitons and strongly correlated phases. The coupling between the layers is crucial for the resulting physical properties and depends not just on the twist angle but also on the details of the fabrication process. Here, we present an approach for the analysis of this interlayer coupling via Raman spectroscopy. By exciting the C-exciton resonance of the TMDCs, optical (high-frequency) interlayer Raman modes are activated that are too weak in intensity at excitation energies far below the C exciton. This is due to the wave function of the C exciton, which expands - in contrast to A and B excitons - over both layers and, therefore, couples the layers electronically. We present optical interlayer Raman modes in twisted 2L TMDCs and show that they can be used as a measure of the interlayer coupling between the individual layers.
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Submitted 26 July, 2024;
originally announced July 2024.
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Excitons in the Fractional Quantum Hall Effect
Authors:
Naiyuan J. Zhang,
Ron Q. Nguyen,
Navketan Batra,
Xiaoxue Liu,
Kenji Watanabe,
Takashi Taniguchi,
D. E. Feldman,
J. I. A. Li
Abstract:
An exciton is a Coulomb-driven bound state, which normally consists of an electron and a hole. Under the influence of charge fractionalization, an exotic construction of excitons arises from pairing between fractional particle and hole charge. Despite numerous theoretical considerations, experimental realization of fractional excitons remains largely unexplored. In this work, we report hallmark tr…
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An exciton is a Coulomb-driven bound state, which normally consists of an electron and a hole. Under the influence of charge fractionalization, an exotic construction of excitons arises from pairing between fractional particle and hole charge. Despite numerous theoretical considerations, experimental realization of fractional excitons remains largely unexplored. In this work, we report hallmark transport signatures of excitonic pairing that coexist with fractional quantum Hall effect states. By investigating the composition of interlayer excitons and their role in the construction of the underlying wavefunction, we describe two types of never-before-seen fractional quantum Hall effect orders. One can be viewed as the fractional analogue of the exciton condensate at total filling of one. The other involves a different type of exciton, which obeys fermionic and anyonic quantum statistics.
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Submitted 5 August, 2024; v1 submitted 25 July, 2024;
originally announced July 2024.
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The temperature influence on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer
Authors:
Ł. Kipczak,
N. Zawadzka,
D. Jana,
I. Antoniazzi,
M. Grzeszczyk,
M. Zinkiewicz,
K. Watanabe,
T. Taniguchi,
M. Potemski,
C. Faugeras,
A. Babiński,
M. R. Molas
Abstract:
The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) ex…
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The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties.
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Submitted 25 July, 2024;
originally announced July 2024.
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Quadrupolar Excitons in MoSe2 Bilayers
Authors:
Jakub Jasiński,
Joakim Hagel,
Samuel Brem,
Edith Wietek,
Takashi Taniguchi,
Kenji Watanabe,
Alexey Chernikov,
Nicolas Bruyant,
Mateusz Dyksik,
Alessandro Surrente,
Michał Baranowski,
Duncan K. Maude,
Ermin Malic,
Paulina Płochocka
Abstract:
The quest for platforms to generate and control exotic excitonic states has greatly benefited from the advent of transition metal dichalcogenide (TMD) monolayers and their heterostructures. Among the unconventional excitonic states, quadrupolar excitons - a hybridized combination of two dipolar excitons with anti-aligned dipole moments - are of great interest for applications in quantum simulation…
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The quest for platforms to generate and control exotic excitonic states has greatly benefited from the advent of transition metal dichalcogenide (TMD) monolayers and their heterostructures. Among the unconventional excitonic states, quadrupolar excitons - a hybridized combination of two dipolar excitons with anti-aligned dipole moments - are of great interest for applications in quantum simulations and for the investigation of many-body physics. Here, we unambiguously demonstrate for the first time in natural MoSe$_2$ homobilayers the emergence of quadrupolar excitons, whose energy shifts quadratically in electric field. In contrast to, so far reported trilayer systems hosting quadrupolar excitons, MoSe$_2$ homobilayers have many advantages, a stronger interlayer hybridization, cleaner potential landscapes and inherent stability with respect to moiré potentials or post-stacking reconstruction. Our experimental observations are complemented by many-particle theory calculations offering microscopic insights in the formation of quadrupole excitons. Our results suggest TMD homobilayers as ideal platform for the engineering of excitonic states and their interaction with light and thus candidate for carrying out on-chip simulations.
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Submitted 25 July, 2024;
originally announced July 2024.
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Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Authors:
Katja Barthelmi,
Tomer Amit,
Lukas Sigl,
Mirco Troue,
Thomas Klokkers,
Anna Herrmann,
Takashi Taniguchi,
Kenji Watanabe,
Jonathan Finley,
Christoph Kastl,
Sivan Refaely-Abramson,
Alexander Holleitner
Abstract:
We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab…
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We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab initio theory, but they have never been resolved in luminescence experiments because of their small amplitude. We reveal the lines by their dependence as a function of the photon energy and momentum as measured in the back focal plane of the optical circuitry. The agreement between theory and experiment suggests that the defect states interact strongly within the Brillouin zone.
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Submitted 25 July, 2024;
originally announced July 2024.
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Distinct moiré trions in a twisted semiconductor homobilayer
Authors:
Zhida Liu,
Haonan Wang,
Xiaohui Liu,
Yue Ni,
Frank Gao,
Saba Arash,
Dong Seob Kim,
Xiangcheng Liu,
Yongxin Zeng,
Jiamin Quan,
Di Huang,
Kenji Watanabe,
Takashi Taniguchi,
Edoardo Baldini,
Allan H. MacDonald,
Chih-Kang Shih,
Li Yang,
Xiaoqin Li
Abstract:
Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moiré superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in…
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Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moiré superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in atomic alignment between the layers occur. In real space, the optically excited electron-hole pair mostly resides in a different site from the doped hole in a moiré supercell. In momentum space, the electron-hole pair forms in the single-particle-band $K$-valley, while the hole occupies the $Γ$-valley. The rich internal structure of this trion resonance arises from the ultra-flatness of the first valence band and the distinct influence of moiré potential modulation on holes and excitons. Our findings open new routes to realizing photon-spin transduction or implementing moiré quantum simulators with independently tunable fermion and boson densities.
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Submitted 24 July, 2024;
originally announced July 2024.
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Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
Authors:
Moyu Chen,
Yongqin Xie,
Bin Cheng,
Zaizheng Yang,
Xin-Zhi Li,
Fanqiang Chen,
Qiao Li,
Jiao Xie,
Kenji Watanabe,
Takashi Taniguchi,
Wen-Yu He,
Menghao Wu,
Shi-Jun Liang,
Feng Miao
Abstract:
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heter…
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Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.
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Submitted 24 July, 2024;
originally announced July 2024.
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Terahertz and gigahertz magneto-ratchets in graphene-based 2D metamaterials
Authors:
Marcel Hild,
Erwin Mönch,
Leonid E. Golub,
Ivan A. Dmitriev,
Ivan Yahniuk,
Katharina Amann,
Julia Amann,
Jonathan Eroms,
Jörg Wunderlich,
Dieter Weiss,
Christophe Consejo,
Cedric Bray,
Kenneth Maussang,
Frederic Teppe,
Joanna Gumenjuk-Sichevska,
Kenji Watanabe,
Takashi Taniguchi,
Sergey D. Ganichev
Abstract:
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet c…
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We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet current at zero magnetic field by orders of magnitude. The oscillations are shown to be related to the Shubnikov-de Haas effect. In addition to the giant ratchet current oscillations we detect resonant ratchet currents caused by the cyclotron and electron spin resonances. The results are well described by the developed theory considering the magneto-ratchet effect caused by the interplay of the near-field radiation and the nonuniform periodic electrostatic potential of the metamaterial controlled by the gate voltages.
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Submitted 22 July, 2024;
originally announced July 2024.
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Infrared magneto-polaritons in MoTe$_2$ mono- and bilayers
Authors:
Bo Han,
Jamie M. Fitzgerald,
Lukas Lackner,
Roberto Rosati,
Martin Esmann,
Falk Eilenberger,
Takashi Taniguchi,
Kenji Watanabe,
Marcin Syperek,
Ermin Malic,
Christian Schneider
Abstract:
MoTe$_2$ monolayers and bilayers are unique within the family of van-der-Waals materials since they pave the way towards atomically thin infrared light-matter quantum interfaces, potentially reaching the important telecommunication windows. Here, we report emergent exciton-polaritons based on MoTe$_2$ monolayer and bilayer in a low-temperature open micro-cavity in a joint experiment-theory study.…
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MoTe$_2$ monolayers and bilayers are unique within the family of van-der-Waals materials since they pave the way towards atomically thin infrared light-matter quantum interfaces, potentially reaching the important telecommunication windows. Here, we report emergent exciton-polaritons based on MoTe$_2$ monolayer and bilayer in a low-temperature open micro-cavity in a joint experiment-theory study. Our experiments clearly evidence both the enhanced oscillator strength and enhanced luminescence of MoTe$_2$ bilayers, signified by a 38 \% increase of the Rabi-splitting and a strongly enhanced relaxation of polaritons to low-energy states. The latter is distinct from polaritons in MoTe$_2$ monolayers, which feature a bottleneck-like relaxation inhibition. Both the polaritonic spin-valley locking in monolayers and the spin-layer locking in bilayers are revealed via the Zeeman effect, which we map and control via the light-matter composition of our polaritonic resonances.
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Submitted 20 July, 2024;
originally announced July 2024.
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Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene
Authors:
Divya Sahani,
Sunit Das,
Kenji Watanabe,
Takashi Taniguchi,
Amit Agarwal,
Aveek Bid
Abstract:
Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure ex…
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Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.
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Submitted 19 July, 2024;
originally announced July 2024.
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Electrical pumping of h-BN single-photon sources in van der Waals heterostructures
Authors:
Mihyang Yu,
Jeonghan Lee,
Kenji Watanabe,
Takashi Taniguchi,
Jieun Lee
Abstract:
Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond, silicon carbide, and zinc oxide, which could lead to the circuit network of electrically triggered single-ph…
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Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond, silicon carbide, and zinc oxide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we conceive and realize a novel device concept to construct electrically pumped single-photon sources using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allows persistent and repeatable generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect complexes of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics.
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Submitted 19 July, 2024;
originally announced July 2024.
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Isospin Pomeranchuk effect and finite temperature resistivity minimum in rhombohedral graphene
Authors:
Ludwig Holleis,
Tian Xie,
Siyuan Xu,
Haoxin Zhou,
Caitlin L. Patterson,
Archisman Panigrahi,
Takashi Taniguchi,
Kenji Watanabe,
Leonid S. Levitov,
Chenhao Jin,
Erez Berg,
Andrea F. Young
Abstract:
Magnetism typically arises from the effect of exchange interactions on highly localized fermionic wave functions in f- and d-atomic orbitals. In rhombohedral graphene multilayers, in contrast, magnetism -- manifesting as spontaneous polarization into one or more spin and valley flavors[1-7]-originates from fully itinerant electrons near a Van Hove singularity. Here, we show that despite the absenc…
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Magnetism typically arises from the effect of exchange interactions on highly localized fermionic wave functions in f- and d-atomic orbitals. In rhombohedral graphene multilayers, in contrast, magnetism -- manifesting as spontaneous polarization into one or more spin and valley flavors[1-7]-originates from fully itinerant electrons near a Van Hove singularity. Here, we show that despite the absence of localized electronic orbitals on the scale of the interparticle separation, rhombohedral graphene bi- and trilayers show thermodynamic signatures typically associated with disordered local magnetic moments. Specifically, while long range valley order vanishes at temperatures of a few Kelvin, thermodynamic characteristics of fluctuating moments, probed via both electronic compressibility[2-4] and exciton sensing measurements[8], survive to temperatures an order of magnitude higher. Measurements of the electronic entropy in this regime reveal a contribution of $ΔS \approx 1k_B$/charge carrier, onsetting at the Curie temperature, while first order phase transitions show an isospin "Pomeranchuk effect" in which the fluctuating moment phase is entropically favored over the nearby symmetric Fermi liquid[9, 10]. Our results imply that despite the itinerant nature of the electron wave functions, the spin- and valley polarization of individual electrons are decoupled, a phenomenon typically associated with localized moments, as happens, for example, in solid 3He[11]. Transport measurements, surprisingly, show a finite temperature resistance minimum within the fluctuating moment regime, which we attribute to the interplay of fluctuating magnetic moments and electron phonon scattering. Our results highlight the universality of soft isospin modes to two dimensional flat band systems and their possible relevance both to low-temperature ground states and high temperature transport anomalies.
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Submitted 18 July, 2024;
originally announced July 2024.
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Observation of Ferromagnetic Phase in the Second Moiré Band of Twisted MoTe2
Authors:
Liheng An,
Haiyang Pan,
Wen-Xuan Qiu,
Naizhou Wang,
Shihao Ru,
Qinghai Tan,
Xuran Dai,
Xiangbin Cai,
Qiuyu Shang,
Xiufang Lu,
Hao Jiang,
Xiaodan Lyu,
Kenji Watanabe,
Takashi Taniguchi,
Fengcheng Wu,
Wei-bo Gao
Abstract:
Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is f…
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Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is fully hole doped, quantum spin Hall insulator has also been reported in tMoTe2 at a certain twist angle. Exotic topological states together with ferromagnetic (FM) states in the high moiré band can potentially exist as well. In this study, we report the observation of a FM phase in the second moiré band in tMoTe2. The FM phase can be tuned by both the doping level and displacement field. At filling around 2.58 holes per moiré unit cell, the FM phase reaches a Curie temperature of 3.5 K. A large displacement field can suppress the FM phase, like the FM phase at the filling of -1. Our results demonstrate the realization of time-reversal symmetry-breaking states in the higher moiré bands in tMoTe2.
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Submitted 18 July, 2024;
originally announced July 2024.
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Measuring Phonon Dispersion and Electron-Phason Coupling in Twisted Bilayer Graphene with a Cryogenic Quantum Twisting Microscope
Authors:
John Birkbeck,
Jiewen Xiao,
Alon Inbar,
Takashi Taniguchi,
Kenji Watanabe,
Erez Berg,
Leonid Glazman,
Francisco Guinea,
Felix von Oppen,
Shahal Ilani
Abstract:
The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena such as resistivity, heat conductivity, and superconductivity. However, direct measurements of this coupling for individual phonon modes remains a significant challenge. In this work, we introduce a novel technique for mapping phonon dispersions and electron phonon co…
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The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena such as resistivity, heat conductivity, and superconductivity. However, direct measurements of this coupling for individual phonon modes remains a significant challenge. In this work, we introduce a novel technique for mapping phonon dispersions and electron phonon coupling (EPC) in van der Waals materials. By generalizing the quantum twisting microscope to cryogenic temperatures, we demonstrate its capability to map not only electronic dispersions via elastic momentum-conserving tunnelling, but also phononic dispersions through inelastic momentum-conserving tunnelling. Crucially, the inelastic tunnelling strength provides a direct and quantitative measure of the momentum and mode resolved EPC. We use this technique to measure the phonon spectrum and EPC of twisted bilayer graphene (TBG). Surprisingly, we find that unlike standard acoustic phonons, whose coupling to electrons diminishes as their momentum goes to zero, TBG exhibits a low energy mode whose coupling increases with decreasing twist angle. We show that this unusual coupling arises from the modulation of the inter-layer tunnelling by a layer-antisymmetric 'phason' mode of the moiré system. The technique demonstrated here opens the way for probing a large variety of other neutral collective modes that couple to electronic tunnelling, including plasmons, magnons and spinons in quantum materials.
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Submitted 18 July, 2024;
originally announced July 2024.
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Optical control of multiple resistance levels in graphene for memristic applications
Authors:
Harsimran Kaur Mann,
Mainak Mondal,
Vivek Sah,
Kenji Watanabe,
Takashi Taniguchi,
Akshay Singh,
Aveek Bid
Abstract:
Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels,…
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Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.
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Submitted 18 July, 2024;
originally announced July 2024.
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Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
Authors:
C. Vergnaud,
V. Tiwari,
L. Ren,
T. Taniguchi,
K. Watanabe,
H. Okuno,
I. Gomes de Moraes,
A. Marty,
C. Robert,
X. Marie,
M. Jamet
Abstract:
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy…
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Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons.
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Submitted 17 July, 2024;
originally announced July 2024.