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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2103.08838 (cond-mat)
[Submitted on 16 Mar 2021 (v1), last revised 25 Jun 2021 (this version, v2)]

Title:Nanoscale trapping of interlayer excitons in a 2D semiconductor heterostructure

Authors:Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley
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Abstract:For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2 heterostructure. The dipole interaction between the IX and the electric field creates an ~20 nm trap. The trapped IXs show the predicted electric field dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step towards deterministic trapping of single IXs, which has broad applications to scalable quantum technologies.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2103.08838 [cond-mat.mes-hall]
  (or arXiv:2103.08838v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2103.08838
Journal reference: Nano Lett. 2021
Related DOI: https://doi.org/10.1021/acs.nanolett.1c01215

Submission history

From: Daniel Shanks [view email]
[v1] Tue, 16 Mar 2021 04:02:56 UTC (5,338 KB)
[v2] Fri, 25 Jun 2021 22:08:19 UTC (7,264 KB)
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